arXiv subjects

Chunyu Guo

Publications and source records attributed to Chunyu Guo.

27 records · Page 2Linked to original sources

arXiv2021

Controlling superconductivity of CeIrIn$_5$ microstructures by substrate selection

Superconductor/metal interfaces are usually fabricated in heterostructures that join these dissimilar materials. A conceptually different approach has recently exploited the strain sensitivity of heavy-fermion superconductors, selectively transforming regions of the crystal into the metallic state by strain gradients. The strain is generated by differential thermal contraction between the sample and the substrate. Here, we present an improved finite-element model that reliably predicts the superconducting transition temperature in CeIrIn$_5$ even in complex structures. Different substrates are employed to tailor the strain field into the desired shapes. Using this approach, both highly complex and strained as well as strain-free microstructures are fabricated to validate the model. This enables full control over the microscopic strain fields, and forms the basis for more advanced structuring of superconductors as in Josephson junctions.

cond-mat.supr-con↗

arXiv2021

Layered Metals as Polarized Transparent Conductors

The quest to improve transparent conductors balances two key goals: increasing electrical conductivity and increasing optical transparency. To improve both simultaneously is hindered by the physical limitation that good metals with high electrical conductivity have large carrier densities that push the plasma edge into the ultra-violet range. Transparent conductors are compromises between electrical conductivity, requiring mobile electrons, and optical transparency based on immobile charges to avoid screening of visible light. Technological solutions reflect this trade-off, achieving the desired transparencies by reducing the conductor thickness or carrier density at the expense of a lower conductance. Here we demonstrate that highly anisotropic crystalline conductors offer an alternative solution, avoiding this compromise by separating the directions of conduction and transmission. Materials with a quasi-two-dimensional electronic structure have a plasma edge well below the range of visible light while maintaining excellent in-plane conductivity. We demonstrate that slabs of the layered oxides Sr$_2$RuO$_4$ and Tl$_2$Ba$_2$CuO$_{6+δ}$ are optically transparent even at macroscopic thicknesses >2$μ$m for c-axis polarized light. Underlying this observation is the fabrication of out-of-plane slabs by focused ion beam milling. This work provides a glimpse into future technologies, such as highly polarized and addressable optical screens, that advancements in a-axis thin film growth will enable.

cond-mat.mtrl-sci↗

arXiv2020

Sondheimer oscillations as a probe of non-ohmic flow in type-II Weyl semimetal WP$_2$

As conductors in electronic applications shrink, microscopic conduction processes lead to strong deviations from Ohm's law. Depending on the length scales of momentum conserving ($l_{MC}$) and relaxing ($l_{MR}$) electron scattering, and the device size ($d$), current flows may shift from ohmic to ballistic to hydrodynamic regimes and more exotic mixtures thereof. So far, an in situ, in-operando methodology to obtain these parameters self-consistently within a micro/nanodevice, and thereby identify its conduction regime, is critically lacking. In this context, we exploit Sondheimer oscillations, semi-classical magnetoresistance oscillations due to helical electronic motion, as a method to obtain $l_{MR}$ in micro-devices even when $l_{MR}\gg d$. This gives information on the bulk $l_{MR}$ complementary to quantum oscillations, which are sensitive to all scattering processes. We extract $l_{MR}$ from the Sondheimer amplitude in the topological semi-metal WP$_2$, at elevated temperatures up to $T\sim 50$~K, in a range most relevant for hydrodynamic transport phenomena. Our data on micrometer-sized devices are in excellent agreement with experimental reports of the large bulk $l_{MR}$ and thus confirm that WP$_2$ can be microfabricated without degradation. Indeed, the measured scattering rates match well with those of theoretically predicted electron-phonon scattering, thus supporting the notion of strong momentum exchange between electrons and phonons in WP$_2$ at these temperatures. These results conclusively establish Sondheimer oscillations as a quantitative probe of $l_{MR}$ in micro-devices in studying non-ohmic electron flow.

cond-mat.mes-hall↗

arXiv2020

Magnetic electron collimation in three-dimensional semi-metals

While electrons moving perpendicular to a magnetic field are confined to cyclotron orbits, they can move freely parallel to the field. This simple fact leads to complex current flow in clean, low carrier density semi-metals, such as long-ranged current jets forming along the magnetic field when currents pass through point-like constrictions. Occurring accidentally at imperfect current injection contacts, the phenomenon of "current jetting" plagues the research of longitudinal magneto-resistance which is particularly important in topological conductors. Here we demonstrate the controlled generation of tightly focused electron beams in a new class of micro-devices machined from crystals of the Dirac semi-metal Cd3As2. The current beams can be guided by tilting a magnetic field and their range tuned by the field strength. Finite element simulations quantitatively capture the voltage induced at faraway contacts when the beams are steered towards them, supporting the picture of controlled electron jets. These experiments demonstrate the first direct control over the highly nonlocal signal propagation unique to 3D semi-metals in the current jetting regime, and may lead to novel applications akin to electron optics in free space.

cond-mat.mtrl-sci↗

arXiv2019

Large Fermi Surface Expansion through Anisotropic c-f Mixing in the Semimetallic Kondo Lattice System CeBi

Using angle-resolved photoemission spectroscopy (ARPES) and resonant ARPES, we report evidence of strong anisotropic conduction-f electron mixing (c-f mixing) in CeBi by observing a largely expanded Ce-5d pocket at low temperature, with no change in the Bi-6p bands. The Fermi surface (FS) expansion is accompanied by a pronounced spectral weight transfer from the local 4f 0 peak of Ce (corresponding to Ce3+) to the itinerant conduction bands near the Fermi level. Careful analysis suggests that the observed large FS change (with a volume expansion of the electron pocket up to 40%) can most naturally be explained by a small valence change (~ 1%) of Ce, which coexists with a very weak Kondo screening. Our work therefore provides evidence for a FS change driven by real charge fluctuations deep in the Kondo limit, which is made possible by the low carrier density.

cond-mat.str-el↗

arXiv2019

Anomalous quantum oscillations and evidence for a non-trivial Berry phase in SmSb

Topologically non-trivial electronic structures can give rise to a range of unusual physical phenomena, and the interplay of band topology with other effects such as electronic correlations and magnetism requires further exploration. The rare earth monopnictides $X$(Sb,Bi) ($X$ = lanthanide) are a large family of semimetals where these different effects may be tuned by the substitution of rare-earth elements. Here we observe anomalous behavior in the quantum oscillations of one member of this family, antiferromagnetic SmSb. The analysis of Shubnikov-de Haas (SdH) oscillations provides evidence for a non-zero Berry phase, indicating a non-trivial topology of the $α$-band. Furthermore, striking differences are found between the temperature dependence of the amplitudes of de Haas-van Alphen effect oscillations, which are well fitted by the Lifshitz-Kosevich (LK) formula across the measured temperature range, and those from SdH measurements which show a significant disagreement with LK behavior at low temperatures. Our findings of unusual quantum oscillations in an antiferromagnetic, mixed valence semimetal with a possible non-trivial band topology can provide an opportunity for studying the interplay between topology, electronic correlations and magnetism.

cond-mat.str-el↗

arXiv2019

Tunable Electronic Structure and Surface States in Rare Earth Mono-Bismuthides with Partially Filled f Shell

Here we report the evolution of bulk band structure and surface states in rare earth mono-bismuthides with partially filled f shell. Utilizing synchrotron-based photoemission spectroscopy, we determined the three-dimensional bulk band structure and identified the bulk band inversions near the X points, which, according to the topological theory, could give rise to nontrivial band topology with odd number of gapless topological surface states. Near the surface Gamma bar point, no clear evidence for predicted gapless topological surface state is observed due to its strong hybridization with the bulk bands. Near the M bar point, the two surface states, due to projections from two inequivalent bulk band inversions, interact and give rise to two peculiar sets of gapped surface states. The bulk band inversions and corresponding surface states can be tuned substantially by varying rare earth elements, in good agreement with density-functional theory calculations assuming local f electrons. Our study therefore establishes rare earth mono-bismuthides as an interesting class of materials possessing tunable electronic properties and magnetism, providing a promising platform to search for novel properties in potentially correlated topological materials.

cond-mat.mes-hall↗

arXiv2019

Probing the Origin of Extreme Magnetoresistance in Pr/Sm Mono-Antimonides/Bismuthides

Combining angle-resolved photoemission spectroscopy and magneto-transport measurements, we systematically investigated the possible origin of the extreme magnetoresistance in Pr/Sm mono-antimonides/bismuthides (PrSb, SmSb, PrBi, SmBi). Our photoemission measurements reveal that the bulk band inversion and surface states are absent (present) in Pr/Sm antimonides (bismuthides), implying that topological surface states are unlikely to play an important role for the observed extreme magnetoresistance. We found that the electron-hole compensation is well satisfied in all these compounds and the bulk band structure exhibits no obvious temperature dependence from 10 K up to 150 K. Simultaneous fittings of the magnetoresistance and Hall coefficient reveal that the carrier mobility is dramatically enhanced at low temperature, which naturally explains the suppression of extreme magnetoresistance at high temperatures. Our results therefore show that the extreme magnetoresistance in these compounds can be well accounted for by the two-band model with good electron-hole compensation. Finally, we found that both PrSb and SmSb exhibit highly linear bulk bands near the X point and lie close to the transition point between a topologically trivial and nontrivial phase, which might be relevant for the observed anomalous quantum oscillations.

cond-mat.mes-hall↗

arXiv2018

Magnetic and defect probes of the SmB$_6$ surface state

The impact of non-magnetic and magnetic impurities on topological insulators is a central problem concerning their fundamental physics and possible novel spintronics and quantum computing applications. SmB$_6$, predicted to be a topological Kondo insulator, is considered a benchmark material. Using a spin-polarized tip in scanning tunneling spectroscopy destroys the signature peak of the topological surface state, revealing its spin texture. Further, combining local STS with macroscopic transport measurements on SmB$_6$ containing different substitutions enables us to investigate the effect of impurities. The surface states around impurities are locally suppressed with different length scales depending on their magnetic properties and, for sufficiently high impurity level, globally destroyed. Our study points directly to the topological nature of SmB$_6$, and unveils, microscopically and macroscopically, how impurities -- magnetic or non-magnetic -- affect topological surface states.

cond-mat.str-el↗