arXiv subjects

Chushan Li

Publications and source records attributed to Chushan Li.

9 recordsLinked to original sources

arXiv2026

Chiral superconductors and competing states across a Lifshitz transition in rhombohedral pentalayer graphene

Rhombohedral multilayer graphene hosts a distinctive low-energy electronic structure in which strong Coulomb interactions and nontrivial quantum geometry intertwine to generate exotic quantum states. Recent experiments reported signatures of chiral superconductivity in electron-doped rhombohedral multilayer graphene within the spin- and valley-polarized regime. Here we map the normal-state fermiology surrounding chiral superconductivity in rhombohedral pentalayer graphene. Quantum oscillation measurements reveal an electrically controlled Lifshitz transition between a simply-connected circular quarter-metal Fermi surface and an annular quarter-metal Fermi surface. The Lifshitz boundary itself shifts with perpendicular magnetic field, consistent with the strongly momentum-dependent orbital magnetic moment of the low-energy band. Approaching the transition from either side, the electron effective mass becomes strongly enhanced, implying the formation of a nearly dispersionless band bottom and a strongly reduced kinetic-energy scale. This singular electronic structure produces a regime of exceptionally strong instability in which chiral superconductivity competes with Wigner crystalline phases and reentrant quantum Hall states. In particular, two superconducting regions with signatures of orbital time-reversal-symmetry breaking lie on opposite sides of the Lifshitz boundary and have comparable transition temperatures, yet the annular-side state is suppressed by a substantially smaller perpendicular magnetic field. Our calculation finds comparable chiral pairing tendencies on the two parent Fermi surfaces while producing a much lower orbital-Zeeman pair-breaking scale and an additional finite-momentum pairing tendency for the annular state. These results identify Fermi-surface topology as a key control parameter for chiral superconductivity in rhombohedral graphene.

cond-mat.mes-hall↗

arXiv2026

Multiple Superconducting Phases in Rhombohedral Heptalayer Graphene

Crystalline rhombohedral multilayer graphene (RMG) has emerged as an ideal platform for studying unconventional superconductivity. Here, we report the observation of superconductivity in moir\'eless rhombohedral heptalayer graphene (RHG) at zero magnetic field. The superconducting phases emerge at low displacement electric fields (|D| < 0.2 V/nm) and are symmetrically distributed about D = 0, with one robust state exhibiting zero resistance and two weaker superconducting features. Comparisons with rhombohedral pentalayer graphene (RPG) reveal distinct perpendicular magnetic-field responses, and quantum oscillation measurements indicate that superconductivity in RHG arises from a half-metallic normal state. These results highlight the strong dependence of superconductivity on layer number and electronic structure in RMG systems and provide new insights into its microscopic origin.

cond-mat.mes-hall↗

arXiv2026

Tunable high-Chern-number Chern insulators in rhombohedral tetralayer graphene/hBN moir\'e superlattices

Moir\'e superlattices based on rhombohedral multilayer graphene have emerged as a highly tunable platform for engineering correlated topological phases. Here, we systematically investigate the transport properties of the hole-doped side in rhombohedral tetralayer graphene/ hexagonal boron nitride (hBN) moir\'e superlattices across a range of twist angles and alignment orientations. Notably, we observed multiple high-Chern-number Chern insulators, including the previously reported integer Chern insulator with Chern number C = -4 at moir\'e filling factor v = -1 and newly discovered symmetry-broken Chern insulating states with C = +3, $\pm$2, $\pm$1 at fractional moir\'e fillings of v = -2.5 or -2.6. These Chern insulating states emerge in both hBN alignment, but exhibit a sensitive moir\'e wavelength dependence. Our findings demonstrate the exceptional tunability of these high-Chern-number states via moir\'e wavelength, displacement electric field and external magnetic field, underscoring the distinct topological landscape realized in hole-doped RTG/hBN moir\'e superlattices.

cond-mat.mes-hall↗

arXiv2026

Emergence of a symmetry-broken Chern insulator near a moir\'e Kondo breakdown

Moir\'e semiconductors built on angle-aligned transition metal dichalcogenide (TMD) heterobilayers provide a physical realization of the Kondo lattice model, in which one TMD layer is prepared in a Mott insulating state supporting a lattice of local magnetic moments and the other layer in a metallic state supporting itinerant carriers. The artificial Kondo lattice enables the exploration of exotic states of matter near a continuously tunable Kondo breakdown. Here we report the emergence of a symmetry-broken Chern insulator at a moir\'e hole filling factor 4/3 in angle-aligned MoTe2/WSe2 moir\'e bilayers, which realize a chiral Kondo lattice. The symmetry-broken Chern insulator, which exhibits integer quantized Hall conductance at a fractional moir\'e filling, breaks the translational symmetry of the lattice spontaneously; it also appears only near a magnetic field-induced Kondo breakdown in the mixed-valence regime of the material. We further demonstrate that the magnetic field required to induce the Kondo breakdown and to stabilize the symmetry-broken Chern insulator is twist angle dependent. The results present new opportunities for exploring the subtle interplay between topology and Kondo interactions in moir\'e semiconductors.

cond-mat.mes-hall↗

arXiv2025

Stacking-orientation and twist-angle control on integer and fractional Chern insulators in moir\'e rhombohedral graphene

Rhombohedral-stacked multilayer graphene aligned with hexagonal boron nitride has emerged as an excellent platform for investigating exotic quantum phenomena arising from the interplay between electron correlations and nontrivial topology. However, the microscopic mechanism governing the emergence of both the integer and fractional Chern insulator states in this system remains an open question. In this work, we systematically investigate the electrical transport properties of RMG/hBN moir\'e devices with controlled alignment orientations and twist angles. We demonstrate that alignment orientation strongly modulates correlated phenomena in the moir\'e-proximal regime, while having negligible influence on the formation of integer and fractional Chern insulators in the moir\'e-distant regime. Instead, the moir\'e periodicity, tuned by the twist angle, serves as the key parameter controlling the stability of these correlated topological states in the moir\'e-distant regime. Furthermore, in the moir\'e-proximal regime of one specific alignment, we observe anomalous Hall effect and a variety of competing phases near {\nu} = 1, including integer Chern insulator states, extended Chern insulator states, and trivial insulators, whose stability is highly sensitive to both the applied displacement electric field and magnetic field. Our results underscore the critical role of stacking-alignment and twist-angle engineering in exploring novel quantum states based on rhombohedral-stacked multilayer graphene moir\'e systems.

cond-mat.mes-hall↗

arXiv2024

Tunable superconductivity in electron- and hole-doped Bernal bilayer graphene

Graphene-based, high quality two-dimensional electronic systems have emerged as a highly tunable platform for studying superconductivity. Specifically, superconductivity has been observed in both electron-doped and hole-doped twisted graphene moire systems, whereas in crystalline graphene systems, superconductivity has so far only been observed in hole-doped rhombohedral trilayer and hole-doped Bernal bilayer graphene (BBG). Recently, enhanced superconductivity has been demonstrated in BBG due to the proximity with a monolayer WSe2. Here, we report the observation of superconductivity and a series of flavor-symmetry-breaking phases in both electron- and hole-doped BBG/WSe2 device by electrostatic doping. The strength of the observed superconductivity is tunable by applied vertical electric fields. The maximum Berezinskii-Kosterlitz-Thouless (BKT) transition temperature for the electron- and hole-doped superconductivity is about 210 mK and 400 mK, respectively. Superconductivities emerge only when applied electric fields drive BBG electron or hole wavefunctions toward the WSe2 layer, underscoring the importance of the WSe2 layer in the observed superconductivity. We find the hole-doped superconductivity violates the Pauli paramagnetic limit, consistent with an Ising-like superconductor. In contrast, the electron-doped superconductivity obeys the Pauli limit, even though the proximity induced Ising spin-orbit coupling is also notable in the conduction band. Our findings highlight the rich physics associated with the conduction band in BBG, paving the way for further studies into the superconducting mechanisms of crystalline graphene and the development of novel superconductor devices based on BBG.

cond-mat.supr-con↗

arXiv2023

Observation of integer and fractional quantum anomalous Hall effects in twisted bilayer MoTe2

The interplay between strong correlations and topology can lead to the emergence of intriguing quantum states of matter. One well-known example is the fractional quantum Hall effect, where exotic electron fluids with fractionally charged excitations form in partially filled Landau levels. The emergence of topological moir\'e flat bands provides exciting opportunities to realize the lattice analogs of both the integer and fractional quantum Hall states without the need for an external magnetic field. These states are known as the integer and fractional quantum anomalous Hall (IQAH and FQAH) states. Here, we present direct transport evidence of the existence of both IQAH and FQAH states in twisted bilayer MoTe2 (AA stacked). At zero magnetic field, we observe well-quantized Hall resistance of h/e2 around moir\'e filling factor {\nu} = -1 (corresponding to one hole per moir\'e unit cell), and nearly-quantized Hall resistance of 3h/2e2 around {\nu} = -2/3, respectively. Concomitantly, the longitudinal resistance exhibits distinct minima around {\nu} = -1 and -2/3. The application of an electric field induces topological quantum phase transition from the IQAH state to a charge transfer insulator at {\nu} = -1, and from the FQAH state to a generalized Wigner crystal state, further transitioning to a metallic state at {\nu} = -2/3. Our study paves the way for the investigation of fractionally charged excitations and anyonic statistics at zero magnetic field based on semiconductor moir\'e materials.

cond-mat.mes-hall↗

arXiv2022

Electron-Electron Interaction and Weak Antilocalization Effect in a Transition Metal Dichalcogenide Superconductor

In disordered transition-metal dichalcogenide (TMD) superconductor, both the strong spin-orbit coupling (SOC) and disorder show remarkable effects on superconductivity. However, the features of SOC and disorder were rarely detected directly. Here we report the quantum transport behaviors arising from the interplay of SOC and disorder in the TMD superconductor 1T-NbSeTe. Before entering the superconducting state, the single crystal at low temperature shows a resistivity upturn, which is T1/2 dependent and insensitive to the applied magnetic fields. The magnetoresistance (MR) at low temperatures shows a H1/2 dependence at high magnetic fields. The characteristics are in good agreement with the electron-electron interaction (EEI) in a disordered conductor. In addition, the upturn changes and MR at low magnetic fields suggest the contribution of weak antilocalization (WAL) effect arising from the strong SOC in the material. Moreover, the quantitative analyses of the transport features in different samples imply anomalous disorder-enhanced superconductivity that needs to be further understood. The results reveal the disorder enhanced EEI and the strong SOC induced WAL effect in 1T-NbSeTe, which illustrate the resistivity minimum in the widely studied doped superconductors. The work also provides insights into the disorder effect on the superconductivity.

cond-mat.supr-con↗

arXiv2021

Superconductivity and Charge Density Wave of CuIr2Te4 by Iodine Doping

Here we report a systematic investigation on the evolution of the structural and physical properties, including the charge density wave and superconductivity of the polycrystalline CuIr2Te4-xIx. X-ray diffraction results indicate that both of a and c lattice parameters increase linearly. The resistivity measurements indicate that the charge density wave is destabilized with slight x but reappears when x is large than 0.9. Meanwhile, the superconducting transition temperature enhances as x raises and reaches a maximum value of around 2.95 K for the optimal composition CuIr2Te3.9I0.1 followed by a slight decrease with higher iodine doping content. The specific heat jump for the optimal composition CuIr2Te3.9I0.1 is approximately 1.46, which is close to the Bardeen Cooper Schrieffer value which is 1.43, indicating it is a bulk superconductor. The results of thermodynamic heat capacity measurements under different magnetic fields, magnetization and magneto-transport measurements further suggest that CuIr2Te4-xIx bulks are type II superconductors. Finally, an electronic phase diagram for this CuIr2Te4-xIx system has been constructed. The present study provides a suitable material platform for further investigation of the interplay of the CDW and superconductivity.

cond-mat.supr-con↗