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Chutchawan Jaisuk

Publications and source records attributed to Chutchawan Jaisuk.

3 recordsLinked to original sources

Direct observation of surface bandgap shrinkage and negative electronic compressibility in SrTiO3

In this work, we investigate and compare the electronic structures of SrTiO3 and KTaO3 under ultraviolet (UV) light induced electron doping. Using angle-resolved photoemission spectroscopy (ARPES), the evolution of the surface electronic structures of SrTiO3 and KTaO3 is systematically examined as a function of electron density. In contrast to KTaO3, SrTiO3 exhibits a pronounced shrinking of its surface bandgap by approximately 390 meV, accompanied by a counterintuitive shift of the valence band peak toward lower binding energies of up to 200 meV with increasing electron density. This anomalous behavior constitutes a spectroscopic signature of negative electronic compressibility (NEC). Density-functional-theory calculations provide qualitative support for the experimental observations. The calculations show that surface formation already reduces the apparent near-gap separation in SrTiO3, while additional electron accumulation further drives the slab toward a more metallic state; oxygen-vacancy models likewise produce strong bandgap reduction, identifying plausible mechanisms contributing to the observed surface bandgap shrinkage. These findings establish a direct spectroscopic link between bandgap engineering and the NEC effect at the SrTiO3 surface, highlighting the potential of SrTiO3 for next-generation oxide electronic, optoelectronic, and high-performance capacitive energy storage devices applications.

cond-mat.mtrl-sci

Emergence of a Bandgap in Nano-Scale Graphite: A Computational and Experimental Study

Bandgaps in layered materials are critical for enabling functionalities such as tunable photodetection, efficient energy conversion, and nonlinear optical responses, which are essential for next-generation photonic and quantum devices. Gap engineering could form heterostructures with complementary materials like transition metal dichalcogenides or perovskites for multi-functional devices. Graphite, conventionally regarded as a gapless material, exhibits a bandgap of ~100 meV in nano-scale patterned highly oriented pyrolytic graphite (HOPG), as revealed by angle-resolved photoemission spectroscopy (ARPES) and Raman measurements. Our state-of-the-art calculations, incorporating photoemission matrix element effects, predict this bandgap with remarkable accuracy and attribute it to mechanical distortions introduced during patterning. This work bridges theory and experiment, providing the direct evidence of a tunable bandgap in HOPG. Beyond its fundamental significance, this finding opens new possibilities for designing materials with tailored electronic properties, enabling advancements in terahertz devices and optoelectronics.

cond-mat.mtrl-sci

Chemical Potential Shift in Doped Mott-insulators for Energy Storage Applications

This work explores the unique character of strongly correlated systems, specifically Mott-insulators, in the context of battery electrode materials. The study investigates the correlation between the proposed chemical potential evolution and charge storage performance in transition metal oxide-based electrodes. The hypothesis suggests that doping a Mott insulator reduces the Hubbard Coulomb interaction, which could slow down the chemical shift and result in enhanced charge storage capabilities compared to classic band insulators. The results support the hypothesis through a systematic comparison of selected transition metal oxide-based electrodes (Cu, Mn, Co, and Fe oxide electrodes). Furthermore, a toy model is employed to investigate the shift in chemical potential with doping-dependent U using DFT+U calculation, aiming to visualize the chemical potential evolution in Mott-insulators relevant to their application as battery electrodes. This study provides valuable insights into how strongly correlated materials, especially Mott-insulators, contribute to the advancement of energy storage technologies.

cond-mat.str-el