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Claude Monney

Publications and source records attributed to Claude Monney.

At least 19 recordsLinked to original sources

Ultrafast dynamics of excitons in black phosphorus

Excitons are key quasiparticles determining the optical properties of solids. As such, they can be utilized to coherently control the electronic structure of materials using optical femtosecond pulses. Identifying the decoherence mechanism during the early non-equilibrium dynamics is crucial to achieve light-induced band-structure engineering in semiconductors. Here, we generate excitons in the direct band gap semiconductor black phosphorus with a resonant mid-infrared photoexcitation. Using time- and angle-resolved photoemission spectroscopy, we track their complex ultrafast dynamics on the few-picosecond time scale. We develop a quantum-kinetic theoretical framework to model the decoherence of excitons into dark excitons via phonon scattering. By combining simulation and experiment, we quantify key parameters describing the early dynamics of the excitons. Our work highlights phonon-mediated intravalley scattering as a fundamental limitation for coherent exciton phenomena in single-valley semiconductors.

cond-mat.mtrl-sci

Electronic band structure reconstruction in Ni$_{x}$ZrTe$_{2}$

The filling of the large van der Waals gap in Transition Metal Dichalcogenides (TMDs) often leads to lattice and electronic instabilities, which prelude the onset of a rich phenomenology. Here, we investigate the electronic structure of the TMDs ZrTe$_2$ and Ni-intercalated ZrTe$_2$ (Ni$_x$ZrTe$_2$, $x\approx 0.05$) employing angle-resolved photoemission spectroscopy (ARPES). We readily identify in Ni$_x$ZrTe$_2$ two flat bands, most likely associated with localized Ni-derived 3$d$-states, at about $\approx-0.7$ eV and $\approx-1.2$ eV in binding energy. The presence of these flat bands is observed for all temperatures ($T$) in our study. More significantly, at low-$T$, we identify an electronic structure reconstruction in Ni$_x$ZrTe$_2$, which halves the electronic periodicity along the $k_{z}$ direction. This is reminiscent of a commensurate band folding with wave-vector $q=(0,0,\pi)$. Together with previous results from macroscopic measurements, namely heat capacity and resistivity, our findings suggest that Ni intercalation drives a structural instability at $T^{*}=287$ K, which causes the observed electronic band reconstruction. Our findings invite further investigation into the structural properties of ZrTe$_2$ and of the intercalated and defect-engineered versions of this material.

cond-mat.str-el

Detection of Image Potential States above the vacuum level in GeTe

The ferroelectric semiconductor {\alpha}-GeTe(111) has attracted significant attention in the last decade due to its unique properties, with extensive studies focusing on its occupied electronic bandstructure. In contrast, its unoccupied states - particularly those near the conduction band minimum - remain largely unexplored. In an effort to characterize those states, we surprisingly observe three image potential states (IPS) in {\alpha}-GeTe(111) extending up to 0.8 eV above the vacuum level. Using time and angle-resolved photoemission spectroscopy, we resolve the full parabolic dispersions of the first three IPS and determine their binding energies. Our analysis, combined with Bloch spectral function calculations, reveals that the unexpected persistence of IPS above the vacuum level originates from strong dipole transitions and the presence of large electron reservoirs in GeTe.

cond-mat.str-el

Suppression of stripe-ordered structural phases in monolayer IrTe$_2$ by a gold substrate

Metal-assisted exfoliation of two-dimensional (2D) materials has emerged as an efficient route to isolating large-area monolayer crystals, yet the influence of the supporting metal substrate on their intrinsic properties remains poorly understood. Here, we demonstrate successful gold-assisted exfoliation of monolayer IrTe$_2$ up to the millimeter scale. Angle-resolved photoemission spectroscopy (ARPES), combined with first-principles calculations, reveals that the low-energy electronic structure closely resembles that of a freestanding monolayer 1T-IrTe$_2$. We find that quasi-covalent hybridization together with substrate-induced strain leads to only modest modifications of the electronic bands. Although strain contributes to phase stability, it is essentially hybridization that drives the stabilization of the 1T-phase of the monolayer IrTe$_2$ by suppressing stripe-ordered phase transitions. These results establish gold-assisted exfoliation as a robust route to prepare a large-area monolayer IrTe$_2$ and highlight the role of metal-substrate interaction in engineering 2D materials with tailored structural phases.

cond-mat.mtrl-sci

Disorder-induced damping of spin excitations in Cr-doped BaFe$_2$As$_2$

In doped Hund's metals, such as the iron-based superconductors, effects like charge doping and chemical pressure are often considered the dominant factors. Partial chemical substitution, however, inevitably introduces disorder. Here, we investigate spin excitations in Ba(Fe$_{1-x}$Cr$_x$)$_2$As$_{2}$ (CrBFA) by high-resolution resonant inelastic x-ray scattering (RIXS) for samples with $x = 0, 0.035,$ and $ 0.085$. In CrBFA, Cr acts as a hole dopant, but also introduces localized spins that compete with Fe-derived magnetic excitations. We found that the Fe-derived magnetic excitations are softened and damped, becoming overdamped for $x = 0.085$. At this doping level, complementary angle-resolved photoemission spectroscopy measurements (ARPES) show increased electronic localization and a suppression of the nematic $d_{xz}/d_{yz}$ band splitting present in the parent compound. We thus propose a localized spin model that explicitly incorporates substitutional disorder and Cr local moments, successfully reproducing our key observations. Our findings reveal a case where disorder dominates over charge doping in the case of a Hund's metal.

cond-mat.supr-con

Conduction Band Structure and Ultrafast Dynamics of Ferroelectric $\alpha$-GeTe(111)

$\alpha$-GeTe(111) is a non-centrosymmetric ferroelectric (FE) material for which a significative lattice distortion combined with a strong spin-orbit interaction gives rise to giant Rashba split states in the bulk and at the surface, which have been intensively probed in the occupied valence states using static angle-resolved photoemission spectroscopy (ARPES). Nevertheless, its unoccupied conduction band structure remains unexplored, in particular the experimental determination of its electronic band gap across momentum space. Using time-resolved ARPES based on high-repetition rate and extreme ultraviolet femtosecond (fs) laser, we unveil the band structure of $\alpha$-GeTe(111) in the full Brillouin zone, both in the valence and conduction states, as well as the exploration of its out-of-equilibrium dynamics. Our work confirms the semiconducting nature of $\alpha$-GeTe(111) with a 0.85 eV indirect band gap, which provides an upper limit for comparison to density functional theory calculations. We finally reveal the dominant scattering mechanisms of photoexcited carriers during the out-of-equilibrium dynamics under fs light pulses.

cond-mat.mtrl-sci

Revealing electronic correlations in YNi$_2$B$_2$C using photoemission spectroscopy

We present a combined density functional theory (DFT), one-step model of photoemission, and soft x-ray angle-resolved photoemission spectroscopy (SX-ARPES) study of the electronic structure of the quaternary borocarbide superconductor YNi$_2$B$_2$C. Our analysis reveals the presence of moderate electronic correlations beyond the semilocal DFT within the generalized gradient approximation. We show that DFT and the full potential Korringa-Kohn-Rostoker method combined with the dynamical mean field theory (DFT+DMFT) with average Coulomb interaction U = 3.0 eV and the exchange energy J = 0.9 eV applied to the Ni d-states are necessary for reproducing the experimentally observed SX-ARPES spectra.

cond-mat.str-el

Composite antiferromagnetic and orbital order with altermagnetic properties at a cuprate/manganite interface

Heterostructures from complex oxides allow one to combine various electronic and magnetic orders as to induce new quantum states. A prominent example is the coupling between superconducting and magnetic orders in multilayers from high-Tc cuprates and manganites. A key role is played here by the interfacial CuO2 layer whose distinct properties remain to be fully understood. Here, we study with resonant inelastic X-ray scattering (RIXS) the magnon excitations of this interfacial CuO2 layer. In particular, we show that the underlying antiferromagnetic exchange interaction at the interface is strongly suppressed to J ~ 70 meV, as compared to J ~ 130 meV for the CuO2 layers away from the interface. Moreover, we observe an anomalous momentum dependence of the intensity of the interfacial magnon mode and show that it suggests that the antiferromagnetic order is accompanied by a particular kind of orbital order that yields a so-called altermagnetic state. Such a two-dimensional altermagnet has recently been predicted to enable new spintronic applications and superconducting proximity effects.

cond-mat.str-el

Persistence of structural distortion and bulk band Rashba splitting in SnTe above its ferroelectric critical temperature

The ferroelectric semiconductor $\alpha$-SnTe has been regarded as a topological crystalline insulator and the dispersion of its surface states has been intensively measured with angle-resolved photoemission spectroscopy (ARPES) over the last decade. However, much less attention has been given to the impact of the ferroelectric transition on its electronic structure, and in particular on its bulk states. Here, we investigate the low-energy electronic structure of $\alpha$-SnTe with ARPES and follow the evolution of the bulk-state Rashba splitting as a function of temperature, across its ferroelectric critical temperature of about $T_c\sim 110$ K. Unexpectedly, we observe a persistent band splitting up to room temperature, which is consistent with an order-disorder contribution to the phase transition that requires the presence of fluctuating local dipoles above $T_c$. We conclude that no topological surface state can occur at the (111) surface of SnTe, at odds with recent literature.

cond-mat.mtrl-sci

Incoherent electronic band states in Mn-substituted BaFe$_{2}$As$_{2}$

Chemical substitution is commonly used to explore new ground states in materials, yet the role of disorder is often overlooked. In Mn-substituted BaFe$_{2}$As$_{2}$ (MnBFA), superconductivity (SC) is absent, despite being observed for nominal hole-doped phases. Instead, a glassy magnetic phase emerges, associated with the $S=5/2$ Mn local spins. In this work, we present a comprehensive investigation of the electronic structure of MnBFA using angle-resolved photoemission spectroscopy (ARPES). We find that Mn causes a small and orbital-specific reduction of the electron pockets, only partially disrupting nesting conditions. Based upon the analysis of the spectral properties, we observe, for all bands, an increase in the electronic scattering rate as a function of Mn content. This is interpreted as increasing band incoherence, which we propose as the primary contributor to the suppression of the magnetic order in MnBFA. This finding connects the MnBFA electronic band structure properties to the glassy magnetic behavior observed in these materials and suggests that SC is absent because of the collective magnetic impurity behavior that scatters the Fe-derived excitations. Additionally, our analysis shows that the binding energy ($E_{B}$) dependence of the imaginary part of the self-energy [$\text{Im}\Sigma(E_{B})$] is best described by a fractional scaling ($\text{Im}\Sigma(E_{B})\propto\sqrt{-E_{B}}$). These results indicate that Mn tunes MnBFA into an electronic disordered phase between the correlated Hund's metal in BaFe$_{2}$As$_{2}$ and the Hund's insulator in BaMn$_{2}$As$_{2}$.

cond-mat.supr-con

Protection of Ising spin-orbit coupling in bulk misfit superconductors

Low-dimensional materials have remarkable properties that are distinct from their bulk counterparts. A paradigmatic example is Ising superconductivity that occurs in monolayer materials such as NbSe2 which show a strong violation of the Pauli limit. In monolayers, this occurs due to a combination of broken inversion symmetry and spin-orbit coupling that locks the spins of the electrons out-of-plane. Bulk NbSe2 is centrosymmetric and is therefore not an Ising superconductor. We show that bulk misfit compound superconductors, (LaSe)1.14(NbSe2) and (LaSe)1.14(NbSe2)2, comprised of monolayers and bilayers of NbSe2, exhibit unexpected Ising protection with a Pauli-limit violation comparable to monolayer NbSe2, despite formally having inversion symmetry. We study these misfit compounds using complementary experimental methods in combination with first-principles calculations. We propose theoretical mechanisms of how the Ising protection can survive in bulk materials. We show how some of these mechanisms operate in these bulk compounds due to a concerted effect of charge-transfer, defects, reduction of interlayer hopping, and stacking. This highlights how Ising superconductivity can, unexpectedly, arise in bulk materials, and possibly enable the design of bulk superconductors that are resilient to magnetic fields.

cond-mat.supr-con

Observation of the metallic mosaic phase in 1$T$-TaS$_2$ at equilibrium

The transition-metal dichalcogenide tantalum disulphide (1$T$-TaS$_2$) hosts a commensurate charge density wave (CCDW) at temperatures below 165~K where it also becomes insulating. The low temperature CCDW phase can be driven into a metastable "mosaic" phase by means of either laser or voltage pulses which shows a large density of CDW domain walls as well as a closing of the electronic band gap. The exact origins of this pulse-induced metallic mosaic are not yet fully understood. Here, using scanning tunneling microscopy and spectroscopy (STM/STS), we observe the occurrence of such a metallic mosaic phase on the surface of TaS$_2$ without prior pulse excitation over continuous areas larger than $100 \times 100$~nm$^2$ and macroscopic areas on the millimetre scale. We attribute the appearance of the mosaic phase to the presence of surface defects which cause the formation of the characteristic dense domain wall network. Based on our STM measurements, we further argue how the appearance of the metallic behaviour in the mosaic phase could be explained by local stacking differences of the top layer. Thus, we provide a potential avenue to explain the origin of the pulse induced mosaic phase.

cond-mat.str-el

Ultrafast charge carrier and exciton dynamics in an excitonic insulator probed by time-resolved photoemission spectroscopy

An excitonic insulator phase is expected to arise from the spontaneous formation of electron-hole pairs (excitons) in semiconductors where the exciton binding energy exceeds the size of the electronic band gap. At low temperature, these ground state excitons stabilize a new phase by condensing at lower energy than the electrons at the valence band top, thereby widening the electronic band gap. The envisioned opportunity to explore many-boson phenomena in an excitonic insulator system is triggering a very active debate on how ground state excitons can be experimentally evidenced. Here, we employ a nonequilibrium approach to spectrally disentangle the photoinduced dynamics of an exciton condensate from the entwined signature of the valence band electrons. By means of time-and angle-resolved photoemission spectroscopy of the occupied and unoccupied electronic states, we follow the complementary dynamics of conduction and valence band electrons in the photoexcited low-temperature phase of Ta2 NiSe5 , the hitherto most promising single-crystal candidate to undergo a semiconductor-to-excitonic-insulator phase transition. The photoexcited conduction electrons are found to relax within less than 1 ps. Their relaxation time is inversely proportional to their excess energy, a dependence that we attribute to the reduced screening of Coulomb interaction and the low dimensionality of Ta2NiSe5 . Long after (> 10 ps) the conduction band has emptied, the photoemission intensity below the Fermi energy has not fully recovered the equilibrium value. Notably, this seeming carrier imbalance cannot be rationalized simply by the relaxation of photoexcited electrons and holes across the semiconducting band gap. [...]

cond-mat.str-el

Precursor phase with full phonon softening above the charge-density-wave phase transition in $2H$-TaSe$_2$

Research on charge-density-wave (CDW) ordered transition-metal dichalcogenides continues to unravel new states of quantum matter correlated to the intertwined lattice and electronic degrees of freedom. Here, we report an inelastic x-ray scattering investigation of the lattice dynamics of the canonical CDW compound $2H$-TaSe$_2$ complemented by angle-resolved photoemission spectroscopy. Our results rule out the central-peak scenario for the CDW transition in $2H$-TaSe$_2$ and provide evidence for a novel precursor phase above the CDW transition temperature $T_{CDW}$. The phase at temperatures between $T^{*}\,(= 128.7\,,\rm{K})$ and $T_{CDW}\,(= 121.3\,\rm{K})$ is characterized by a fully softened phonon mode and medium-range ordered ($\xi_{corr} = 100\,\rm{\mathring{A}}- 200\,\rm{\mathring{A}})$ static CDW domains. Only $T_{CDW}$ is detectable in our photoemission experiments. Thus, $2H$-TaSe$_2$ exhibits structural before electronic static order and emphasizes the important lattice contribution to CDW transitions.

cond-mat.str-el

Field-induced ultrafast modulation of Rashba coupling at room temperature in ferroelectric $\alpha$-GeTe(111)

Rashba materials have appeared as an ideal playground for spin-to-charge conversion in prototype spintronics devices. Among them, $\alpha$-GeTe(111) is a non-centrosymmetric ferroelectric (FE) semiconductor for which a strong spin-orbit interaction gives rise to giant Rashba coupling. Its room temperature ferroelectricity was recently demonstrated as a route towards a new type of highly energy-efficient non-volatile memory device based on switchable polarization. Currently based on the application of an electric field, the writing and reading processes could be outperformed by the use of femtosecond (fs) light pulses requiring exploration of the possible control of ferroelectricity on this timescale. Here, we probe the room temperature transient dynamics of the electronic band structure of $\alpha$-GeTe(111) using time and angle-resolved photoemission spectroscopy (tr-ARPES). Our experiments reveal an ultrafast modulation of the Rashba coupling mediated on the fs timescale by a surface photovoltage (SPV), namely an increase corresponding to a 13 % enhancement of the lattice distortion. This opens the route for the control of the FE polarization in $\alpha$-GeTe(111) and FE semiconducting materials in quantum heterostructures.

cond-mat.mtrl-sci

Modified interlayer stacking and insulator to correlated-metal transition driven by uniaxial strain in 1$T$-TaS$_{2}$

Interlayer coupling is strongly implicated in the complex electronic properties of 1$T$-TaS$_2$ , but the interplay between this and electronic correlations remains unresolved. Here, we employ angle-resolved photoemission spectroscopy (ARPES) to reveal the effect of uniaxial strain engineering on the electronic structure and interlayer coupling in 1$T$-TaS$_2$ . The normally insulating ground state is transformed into a correlated-metal phase under strain, as evidenced by the emergence of a narrow band at the Fermi level. Temperature dependent ARPES measurements reveal that the metallic behaviour only develops below the commensurate charge density wave (CCDW) transition, where interlayer dimerization produces a band-insulator in unstrained samples. Electronic structure calculations demonstrate that the correlated metallic behaviour is stabilized by a previously predicted but unobserved bulk stacking structure with a modified interlayer coupling of the Ta d$_{z^{2}}$ electrons. Our combined approach lays bare the role of correlations and interlayer coupling in 1$T$-TaS$_2$ , providing critical input for understanding superconductivity under pressure and the metastable hidden phase induced using non-equilibrium protocols in this platform material for correlated physics.

cond-mat.str-el

Mott versus hybridization gap in the low-temperature phase of $1T$-TaS$_2$

We compute the correlated electronic structure of stacked $1T$-TaS$_2$ bilayers using the $GW$ + EDMFT method. Depending on the surface termination, the semi-infinite uncorrelated system is either band-insulating or exhibits a metallic surface state. For realistic values of the onsite and intersite interactions, a Mott gap opens in the surface state, but this gap is smaller than the gap originating from the bilayer structure. Our results are consistent with recent scanning tunneling spectroscopy measurements for different terminating layers, and with our own photoemission measurements, which indicate the coexistence of spatial regions with different gaps in the electronic spectrum.

cond-mat.str-el

Electron-momentum dependence of electron-phonon coupling underlies dramatic phonon renormalization in YNi$_2$B$_2$C

Electron-phonon coupling, i.e., the scattering of lattice vibrations by electrons and vice versa, is ubiquitous in solids and can lead to emergent ground states such as superconductivity and charge-density wave order. Strong coupling of phonons to electrons near the Fermi surface, which reduces the phonon lifetimes and broadens the phonon peaks in scattering experiments, is often associated with Fermi surface nesting. Here, we show that strong phonon broadening can occur in the absence of both Fermi surface nesting and lattice anharmonicity, if electron-phonon coupling is strongly enhanced for specific values of electron-momentum, k. We use inelastic neutron scattering, soft x-ray angle-resolved photoemission spectroscopy measurements and ab-initio lattice dynamical and electronic band structure calculations to demonstrate this scenario in the highly anisotropic tetragonal electron-phonon superconductor YNi$_2$B$_2$C. This new scenario likely applies to a wide range of compounds.

cond-mat.supr-con