SearcharxivSearch

arXiv subjects

Claudio J. Oton

Publications and source records attributed to Claudio J. Oton.

3 recordsLinked to original sources

Self-Pulsing Microring Resonator Networks for Bandwidth-Efficient Event Detection in an Optical Fiber Sensor

The native processing of time-dependent signals from optical sensors by integrated photonic circuits can potentially bring significant advantages in terms of energy consumption, latency and processing power, as it allows skipping or reducing the use of fast digital electronics and directly exploiting optical degrees of freedom and parallelism. However, due to a short memory, optical operations usually struggle to directly process optical signals with relatively slow (<MHz) dynamics from optical sensors. In this work, we experimentally show that these limitations can be overcome by exploiting the self-pulsing dynamics in a microring resonator (MRR) network. In particular, we demonstrate that such dynamics can expand and retain information about perturbations sensed by a fiber sensor. This reduces the minimum sampling rate for the digitization of the sensor signal by at least one order of magnitude. The reduction is achieved by combining fiber sensing measurements at two different perturbation locations and frequencies with MRR network measurements at multiple output ports, input power levels and laser wavelengths. This work represents a first step in bridging time-dependent optical processing and optical sensing at sub-μs time scales.

physics.optics

Opposite effects of NO$_2$ on electrical injection in porous silicon gas sensors

The electrical conductance of porous silicon fabricated with heavily doped p-type silicon is very sensitive to NO$_2$. A concentration of 10 ppb can be detected by monitoring the current injection at fixed voltage. However, we show that the sign of the injection variations depends on the porous layer thickness. If the thickness is sufficiently low -- of the order of few \micro\meter{} -- the injection decreases instead of increasing. We discuss the effect in terms of an already proposed twofold action of NO$_2$, according to which the free carrier density increases, and simultaneously the energy bands are bent at the porous silicon surface.

cond-mat.mtrl-sci

Role of microstructure in porous silicon gas sensors for NO$_2$

Electrical conductivity of porous silicon fabricated form heavily doped p-type silicon is very sensitive to NO$_2$, even at concentrations below 100 ppb. However, sensitivity strongly depends on the porous microstructure. The structural difference between sensitive and insensitive samples is independently confirmed by microscopy images and by light scattering behavior. A way to change the structure is by modifying the composition of the electrochemical solution. We have found that best results are achieved using ethanoic solutions with HF concentration levels between 13% and 15%.

cond-mat.mtrl-sci