arXiv subjects

Claus M. Schneider

Publications and source records attributed to Claus M. Schneider.

36 records · Page 2Linked to original sources

arXiv2017

Electrical resistance of individual defects at a topological insulator surface

Three-dimensional topological insulators host surface states with linear dispersion, which manifest as a Dirac cone. Nanoscale transport measurements provide direct access to the transport properties of the Dirac cone in real space and allow the detailed investigation of charge carrier scattering. Here, we use scanning tunnelling potentiometry to analyse the resistance of different kinds of defects at the surface of a (Bi0.53Sb0.47)2Te3 topological insulator thin film. The largest localized voltage drop we find to be located at domain boundaries in the topological insulator film, with a resistivity about four times higher than that of a step edge. Furthermore, we resolve resistivity dipoles located around nanoscale voids in the sample surface. The influence of such defects on the resistance of the topological surface state is analysed by means of a resistor network model. The effect resulting from the voids is found to be small compared to the other defects.

cond-mat.mes-hall↗

arXiv2017

Direct observation of the band gap transition in atomically thin ReS$_2$

ReS$_2$ is considered as a promising candidate for novel electronic and sensor applications. The low crystal symmetry of the van der Waals compound ReS$_2$ leads to a highly anisotropic optical, vibrational, and transport behavior. However, the details of the electronic band structure of this fascinating material are still largely unexplored. We present a momentum-resolved study of the electronic structure of monolayer, bilayer, and bulk ReS$_2$ using k-space photoemission microscopy in combination with first-principles calculations. We demonstrate that the valence electrons in bulk ReS$_2$ are - contrary to assumptions in recent literature - significantly delocalized across the van der Waals gap. Furthermore, we directly observe the evolution of the valence band dispersion as a function of the number of layers, revealing a significantly increased effective electron mass in single-layer crystals. We also find that only bilayer ReS$_2$ has a direct band gap. Our results establish bilayer ReS$_2$ as a advantageous building block for two-dimensional devices and van der Waals heterostructures.

cond-mat.mtrl-sci↗

arXiv2016

$\mbox{Bi}_{1}\mbox{Te}_{1}$: a dual topological insulator

A combined theoretical and experimental study reveals evidence for the dual topological insulating character of the stoichiometric natural superlattice phase $\mathrm{Bi_{1}Te_{1}}=\mathrm{[Bi_{2}]_{1}[Bi_{2}Te_{3}]_{2}}$, being a stack of alternating Bi bilayers and two quintuple layers of $\mathrm{Bi_{2}Te_{3}}$. We identify $\mathrm{Bi_{1}Te_{1}}$ by density functional theory to exhibit a non trivial time-reversal symmetry-driven character of $\mathbb{Z}_{2}=(0;001)$ and additionally a mirror-symmetry induced mirror Chern number of $n_{\cal M}=-2$, which indicates that $\mathrm{Bi_{1}Te_{1}}$ is both a weak topological insulator and a topological crystalline insulator. The coexistence of the two phenomena preordains distinct crystal planes to host topological surface states that are protected by the respective symmetries. The surface perpendicular to the stacking direction is the 'dark' surface of the weak topological insulator, while hosting mirror-symmetry protected surface states along the $\bar{Γ\mathrm{M}}$ direction at non-time-reversal invariant momenta points. We confirm the stacking sequence of our MBE-grown $\mathrm{Bi_{1}Te_{1}}$ thin films by X-ray diffraction and transmission electron microscopy, and find indications of the topological crystalline and weak topological character in the surface electronic spin structure by spin- and angle-resolved photoemission spectroscopy, which nicely match the results from density functional theory.

cond-mat.mtrl-sci↗

arXiv2016

Impact of tunnel barrier strength on magnetoresistance in carbon nanotubes

We investigate magnetoresistance in spin valves involving CoPd-contacted carbon nanotubes. Both temperature and bias voltage dependence clearly indicate tunneling magnetoresistance as the origin. We show that this effect is significantly affected by the tunnel barrier strength, which appears to be one reason for the variation between devices previously detected in similar structures. Modeling the data by means of the scattering matrix approach, we find a non-trivial dependence of the magnetoresistance on the barrier strength. Furthermore, analysis of the spin precession observed in a nonlocal Hanle measurement yields a spin lifetime of $τ_s = 1.1\,$ns, a value comparable with those found in silicon- or graphene-based spin valve devices.

cond-mat.mes-hall↗

arXiv2016

Accurate determination of the valence band edge in hard x-ray photoemission spectra using GW theory

We introduce a new method for determining accurate values of the valence-band maximum in x-ray photoemission spectra. Specifically, we align the sharpest peak in the valence-band region of the experimental spectrum with the corresponding feature of a theoretical valence-band density of states curve from ab initio GW theory calculations. This method is particularly useful for soft and hard x-ray photoemission studies of materials with a mixture of valence-band characters, where strong matrix element effects can render standard methods for extracting the valence-band maximum unreliable. We apply our method to hydrogen-terminated boron-doped diamond, which is a promising substrate material for novel solar cell devices. By carrying out photoemission experiments with variable light polarizations, we verify the accuracy of our analysis and the general validity of the method.

cond-mat.mtrl-sci↗

arXiv2015

Quasi 2D electronic states with high spin-polarization in centrosymmetric MoS$_2$ bulk crystals

Time reversal dictates that nonmagnetic, centrosymmetric crystals cannot be spin-polarized as a whole. However, it has been recently shown that the electronic structure in these crystals can in fact show regions of high spin-polarization, as long as it is probed locally in real and in reciprocal space. In this article we present the first observation of this type of compensated polarization in MoS$_2$ bulk crystals. Using spin- and angle-resolved photoemission spectroscopy (ARPES) we directly observed a spin-polarization of more than 65% for distinct valleys in the electronic band structure. By additionally evaluating the probing depth of our method we find that these valence band states at the $\overline{\text{K}}$ point in the Brillouin zone are close to fully polarized for the individual atomic trilayers of MoS$_2$, which is confirmed by our density functional theory calculations. Furthermore, we show that this spin-layer locking leads to the observation of highly spin-polarized bands in ARPES since these states are almost completely confined within two dimensions. Our findings prove that these highly desired properties of MoS$_2$ can be accessed without thinning it down to the monolayer limit.

cond-mat.mtrl-sci↗

arXiv2015

Realization of a vertical topological p-n junction in epitaxial $\mathrm{Sb_2Te_3 / Bi_2Te_3}$ heterostructures

3D topological insulators are a new state of quantum matter which exhibits both a bulk band structure with an insulating energy gap as well as metallic spin-polarized Dirac fermion states when interfaced with a topologically trivial material. There have been various attempts to tune the Dirac point to a desired energetic position for exploring its unusual quantum properties. Here we show a direct experimental proof by angle-resolved photoemission of the realization of a vertical topological p-n junction made of a heterostructure of two different binary 3D TI materials $\mathrm{Bi_2Te_3}$ and $\mathrm{Sb_2Te_3}$ epitaxially grown on Si(111). We demonstrate that the chemical potential is tunable by about 200 meV when decreasing the upper $\mathrm{Sb_2Te_3}$ layer thickness from 25 to 6 quintuple layers without applying any external bias. These results make it realistic to observe the topological exciton condensate and pave the way of exploring other exotic quantum phenomena in the near future.

cond-mat.mes-hall↗

arXiv2015

Tuning the Dirac point to the Fermi level in the ternary topological insulator (Bi$_{1-x}$Sb$_{x}$)$_{2}$Te$_{3}$

In order to stabilize Majorana excitations within vortices of proximity induced topological superconductors, it is mandatory that the Dirac point matches the Fermi level rather exactly, such that the conventionally confined states within the vortex are well separated from the Majorana-type excitation. Here, we show by angle resolved photoelectron spectroscopy that (Bi$_{1-x}$Sb$_{x}$)$_{2}$Te$_{3}$ thin films with $x=0.94$ prepared by molecular beam epitaxy and transferred in ultrahigh vacuum from the molecular beam epitaxy system to the photoemission setup matches this condition. The Dirac point is within 10 meV around the Fermi level and we do not observe any bulk bands intersecting the Fermi level.

cond-mat.mtrl-sci↗

arXiv2015

Functional Materials for Information and Energy Technology: Insights by Photoelectron Spectroscopy

The evolution of both information and energy technology is intimately connected to complex condensed matter systems, the properties of which are determined by electronic and chemical interactions and processes on a broad range of length and time scales. Dedicated photoelectron spectroscopy and spectromicroscopy experiments can provide important insights. We discuss some recent methodological developments with application to relevant questions in spintronics, and towards in-operando studies of resistive switching and electrochemical processes.

cond-mat.mtrl-sci↗

arXiv2015

Sub-nm wide electron channels protected by topology

Helical locking of spin and momentum and prohibited backscattering are the key properties of topologically protected states. They are expected to enable novel types of information processing such as spintronics by providing pure spin currents, or fault tolerant quantum computation by using the Majorana fermions at interfaces of topological states with superconductors. So far, the required helical conduction channels used to realize Majorana fermions are generated through application of an axial magnetic field to conventional semiconductor nanowires. Avoiding the magnetic field enhances the possibilities for circuit design significantly. Here, we show that sub-nanometer wide electron channels with natural helicity are present at surface step-edges of the recently discovered topological insulator Bi14Rh3I9. Scanning tunneling spectroscopy reveals the electron channels to be continuous in both energy and space within a large band gap of 200 meV, thereby, evidencing its non-trivial topology. The absence of these channels in the closely related, but topologically trivial insulator Bi13Pt3I7 corroborates the channels' topological nature. The backscatter-free electron channels are a direct consequence of Bi14Rh3I9's structure, a stack of 2D topologically insulating, graphene-like planes separated by trivial insulators. We demonstrate that the surface of Bi14Rh3I9 can be engraved using an atomic force microscope, allowing networks of protected channels to be patterned with nm precision.

cond-mat.mes-hall↗

arXiv2012

Index assignment of a carbon nanotube rope using tip-enhanced Raman spectroscopy

We used tip-enhanced Raman spectroscopy to study the diameter-dependent Raman modes in a contacted carbon nanotube rope. We show that with the near-field tip enhancement a large number of nanotubes within a rope can be identified, even if the nanotube modes can not be distinguished in the far-field signal. Several metallic and semiconducting nanotubes can be identified and assigned to nanotube families. Additionally, we provide a tentative chiral index assignment.

cond-mat.mes-hall↗

arXiv2012

Parallel carbon nanotube quantum dots and their interactions

We present quantum transport measurements of interacting parallel quantum dots formed in the strands of a carbon nanotube rope. In this molecular quantum dot system, transport is dominated by one quantum dot, while additional resonances from parallel side dots appear, which exhibit a weak gate coupling. This differential gating effect provides a tunability of the quantum dot system with only one gate electrode and provides control over the carbon nanotube strand that carries the current. By tuning the system to different states we use quantum transport as a spectroscopic tool to investigate the inter-dot coupling and show a route to distinguish between various side dots. By comparing the experimental data with master equation calculations, we identify conditions for the tunneling rates that are required in order to observe different manifestations of the inter-dot coupling in the transport spectra.

cond-mat.mes-hall↗

arXiv2011

Quenched Slonczewski-Windmill in Spin-Torque Vortex-Oscillators

We present a combined analytical and numerical study on double-vortex spin-torque nano-oscillators and describe a mechanism that suppresses the windmill modes. The magnetization dynamics is dominated by the gyrotropic precession of the vortex in one of the ferromagnetic layers. In the other layer the vortex gyration is strongly damped. The dominating layer for the magnetization dynamics is determined by the current polarity. Measurements on Fe/Ag/Fe nano-pillars support these findings. The results open up a new perspective for building high quality-factor spin-torque oscillators operating at selectable, well-separated frequency bands.

cond-mat.mes-hall↗

arXiv2011

Spin-dependent electronic hybridization in a rope of carbon nanotubes

We demonstrate single electron addition to different strands of a carbon nanotube rope. Anticrossings of anomalous conductance peaks occur in quantum transport measurements through the parallel quantum dots forming on the individual strands. We determine the magnitude and the sign of the hybridization as well as the Coulomb interaction between the carbon nanotube quantum dots, finding that the bonding states dominate the transport. In a magnetic field the hybridization is shown to be selectively suppressed due to spin effects.

cond-mat.mes-hall↗

arXiv2011

Comprehensive characterization of an individual carbon nanotube transport device

We present a comprehensive characterization of an individual multiwalled carbon nanotube transport device combining electron microscopy and Raman spectroscopy with electrical measurements. Each method gives complementary information that mutually help to interpret each other. A sample design that allows for combining these investigation methods on individual carbon nanotube devices is introduced. This offers a direct correlation of transport features and shifts of Raman modes with structural properties as e.g. the contact interface and the morphology of the nanotube.

cond-mat.mes-hall↗

arXiv2011

Spin-Transfer Torque Induced Vortex Dynamics in Fe/Ag/Fe Nanopillars

We report experimental and analytical work on spin-transfer torque induced vortex dynamics in metallic nanopillars with in-plane magnetized layers. We study nanopillars with a diameter of 150 nm, containing two Fe layers with a thickness of 15 nm and 30 nm respectively, separated by a 6 nm Ag spacer. The sample geometry is such that it allows for the formation of magnetic vortices in the Fe disks. As confirmed by micromagnetic simulations, we are able to prepare states where one magnetic layer is homogeneously magnetized while the other contains a vortex. We experimentally show that in this configuration spin-transfer torque can excite vortex dynamics and analyze their dependence on a magnetic field applied in the sample plane. The center of gyration is continuously dislocated from the disk center, and the potential changes its shape with field strength. The latter is reflected in the field dependence of the excitation frequency. In the second part we propose a novel mechanism for the excitation of the gyrotropic mode in nanopillars with a perfectly homogeneously magnetized in-plane polarizing layer. We analytically show that in this configuration the vortex can absorb energy from the spin-polarized electric current if the angular spin-transfer efficiency function is asymmetric. This effect is supported by micromagnetic simulations.

cond-mat.mes-hall↗

arXiv2010

Spatially resolved observation of uniform precession modes in spin-valve systems

Using time-resolved photoemission electron microscopy the excitation of uniform precession modes in individual domains of a weakly coupled spin-valve system has been studied. A coupling dependence of the precession frequencies has been found that can be reasonably well understood on the basis of a macrospin model. By tuning the frequency of the excitation source the uniform precession modes are excited in a resonant way.

cond-mat.mtrl-sci↗

arXiv2008

Ultrafast dynamics of a magnetic antivortex - Micromagnetic simulations

The antivortex is a fundamental magnetization structure which is the topological counterpart of the well-known magnetic vortex. We study here the ultrafast dynamic behavior of an isolated antivortex in a patterned Permalloy thin-film element. Using micromagnetic simulations we predict that the antivortex response to an ultrashort external field pulse is characterized by the production of a new antivortex as well as of a temporary vortex, followed by an annihilation process. These processes are complementary to the recently reported response of a vortex and, like for the vortex, lead to the reversal of the orientation of the antivortex core region. In addition to its fundamental interest, this dynamic magnetization process could be used for the generation and propagation of spin waves for novel logical circuits.

cond-mat.mtrl-sci↗