arXiv subjects

Colin Nuckolls

Publications and source records attributed to Colin Nuckolls.

15 recordsLinked to original sources

arXiv2026

Molecular spin qubits in a van der Waals bottle

Advancing quantum information technologies requires qubits whose coherence can be precisely engineered. Among the qubit platforms in development, molecular spin qubits (MSQs) stand out for their atomic scale tunability and chemical specificity, making them powerful candidates for sensing, simulation, and information processing. However, integrating MSQs into solid-state architectures without degrading their coherence remains a central challenge. Here, we introduce van der Waals (vdW) confinement within two-dimensional materials as a strategy for stabilizing quantum states in MSQs by engineering their local electronic, vibrational, and symmetry environments. Using cobaltocene as a model system, we show that confinement within vdW SnS2 and CdPS3 single crystals reorganizes the single-ion energy landscape and slows spin-lattice relaxation by over two orders of magnitude relative to unconfined cobaltocene. The confined MSQs adopt deterministic orientations and self-assemble into ordered, atomically precise superlattices, establishing vdW confinement as a pathway for integrating MSQs into functional quantum devices.

cond-mat.mtrl-sci↗

arXiv2026

On-demand steering of hyperbolic chiral polaritons

Control of light polarization and propagation in sub-wavelength architectures is foundational to nanophotonic technologies. A frontier direction is to leverage strong optical spin-orbit interactions to realize polarization-selective light steering, known as the photonic spin Hall effect. In this context, hyperbolic plasmon polaritons (HPPs) are of particular interest as they offer large optical spin-orbit coupling from strong confinement and dielectric anisotropy, as well as ray-like propagation. Despite theoretical predictions, however, the hyperbolic spin Hall effect in natural materials has remained elusive. Here, we demonstrate the hyperbolic spin Hall effect in the visible and near-infrared range in the natural hyperbolic van der Waals metal MoOCl2. Enabling this discovery is a novel far-field pump-probe microscope that facilitates the launching and imaging of HPPs with exceptional sensitivity through interference with a high-momentum reference field. This approach preserves excellent control over light polarization, overcoming a key barrier to polarization-selective interrogation of hyperbolic materials. We show that both hyperbolic and surface plasmons in MoOCl2 display chiral fields, and that their propagation direction can be completely switched upon light helicity reversal. Our results demonstrate on-demand steering of chiral plasmons, firmly establishing natural hyperbolic materials as ideal components for reconfigurable nanophotonics and chiral light-matter coupling.

cond-mat.mtrl-sci↗

arXiv2023

Interplay between local moment and itinerant magnetism in the layered metallic antiferromagnet TaFe$_{1.14}$Te$_3$

Two-dimensional (2D) antiferromagnets have garnered considerable interest for the next generation of functional spintronics. However, many available bulk materials from which 2D antiferromagnets are isolated are limited by their sensitivity to air, low ordering temperatures, and insulating transport properties. TaFe$_{1+y}$Te$_3$ offers unique opportunities to address these challenges with increased air stability, metallic transport properties, and robust antiferromagnetic order. Here, we synthesize TaFe$_{1+y}$Te$_3$ ($y$ = 0.14), identify its structural, magnetic, and electronic properties, and elucidate the relationships between them. Axial-dependent high-field magnetization measurements on TaFe$_{1.14}$Te$_3$ reveal saturation magnetic fields ranging between 27-30 T with a saturation magnetic moment of 2.05-2.12 $μ_B$. Magnetotransport measurements confirm TaFe$_{1.14}$Te$_3$ is metallic with strong coupling between magnetic order and electronic transport. Angle-resolved photoemission spectroscopy measurements across the magnetic transition uncover a complex interplay between itinerant electrons and local magnetic moments that drives the magnetic transition. We further demonstrate the ability to isolate few-layer sheets of TaFe$_{1.14}$Te$_3$ through mechanical exfoliation, establishing TaFe$_{1.14}$Te$_3$ as a potential platform for 2D spintronics based on metallic layered antiferromagnets.

cond-mat.mtrl-sci↗

arXiv2021

Visualizing Atomically-Layered Magnetism in CrSBr

Two-dimensional (2D) materials can host stable, long-range magnetic phases in the presence of underlying magnetic anisotropy. The ability to realize the full potential of 2D magnets necessitates systematic investigation of the role of individual atomic layers and nanoscale inhomogeneity ($\textit{i.e.}$, strain) on the emergence and stability of both intra- and interlayer magnetic phases. Here, we report multifaceted spatial-dependent magnetism in few-layer CrSBr using magnetic force microscopy (MFM) and Monte Carlo-based magnetic simulations. We perform nanoscale visualization of the magnetic sheet susceptibility from raw MFM data and force-distance curves, revealing a characteristic onset of both intra- and interlayer magnetic correlations as a function of temperature and layer-thickness. We demonstrate that the presence of a single uncompensated layer in odd-layer terraces significantly reduces the stability of the low-temperature antiferromagnetic (AFM) phase and gives rise to multiple coexisting magnetic ground states at temperatures close to the bulk Néel temperature ($\textit{T}$$_N$). Furthermore, the AFM phase can be reliably suppressed using modest fields (~300 Oe) from the MFM probe, behaving as a nanoscale magnetic switch. Our prototypical study of few-layer CrSBr demonstrates the critical role of layer parity on field-tunable 2D magnetism and provides vital design criteria for future nanoscale magnetic devices. Moreover, we provide a roadmap for using MFM for nano-magnetometry of 2D materials, despite the ubiquitous absence of bulk zero-field magnetism in magnetized sheets.

cond-mat.mtrl-sci↗

arXiv2021

Strongly correlated ladders in K-doped $p$-terphenyl crystals

Potassium-doped terphenyl has recently attracted attention as a potential host for high-transition-temperature superconductivity. Here, we elucidate the many-body electronic structure of recently synthesized potassium-doped terphenyl crystals. We show that this system may be understood as a set of weakly coupled one-dimensional ladders. Depending on the strength of the inter-ladder coupling the system may exhibit spin-gapped valence-bond solid or antiferromagnetic phases, both of which upon hole doping may give rise to superconductivity. This terphenyl-based ladder material serves as a new platform for investigating the fate of ladder phases in presence of three-dimensional coupling as well as for novel superconductivity.

cond-mat.str-el↗

arXiv2021

Hidden low-temperature magnetic order revealed through magnetotransport in monolayer CrSBr

Magnetic semiconductors are a powerful platform for understanding, utilizing and tuning the interplay between magnetic order and electronic transport. Compared to bulk crystals, two-dimensional magnetic semiconductors have greater tunability, as illustrated by the gate modulation of magnetism in exfoliated CrI$_3$ and Cr$_2$Ge$_2$Te$_6$, but their electrically insulating properties limit their utility in devices. Here we report the simultaneous electrostatic and magnetic control of electronic transport in atomically-thin CrSBr, an A-type antiferromagnetic semiconductor. Through magnetotransport measurements, we find that spin-flip scattering from the interlayer antiferromagnetic configuration of multilayer flakes results in giant negative magnetoresistance. Conversely, magnetoresistance of the ferromagnetic monolayer CrSBr vanishes below the Curie temperature. A second transition ascribed to the ferromagnetic ordering of magnetic defects manifests in a large positive magnetoresistance in the monolayer and a sudden increase of the bulk magnetic susceptibility. We demonstrate this magnetoresistance is tunable with an electrostatic gate, revealing that the ferromagnetic coupling of defects is carrier mediated.

cond-mat.mes-hall↗

arXiv2020

Magnetic Order and Symmetry in the 2D Semiconductor CrSBr

The recent discovery of two-dimensional (2D) magnets offers unique opportunities for the experimental exploration of low-dimensional magnetism4 and the magnetic proximity effects, and for the development of novel magnetoelectric, magnetooptic and spintronic devices. These advancements call for 2D materials with diverse magnetic structures as well as effective probes for their magnetic symmetries, which is key to understanding intralayer magnetic order and interlayer magnetic coupling. Here we apply second harmonic generation (SHG), a technique acutely sensitive to symmetry breaking, to probe the magnetic structure of a new 2D magnetic semiconductor, CrSBr. We find that CrSBr monolayers are ferromagnetically ordered below 146 K, an observation enabled by the discovery of a giant magnetic dipole SHG effect in the centrosymmetric 2D structure. In multilayers, the ferromagnetic monolayers are coupled antiferromagnetically, with the Néel temperature notably increasing with decreasing layer number. The magnetic structure of CrSBr, comprising spins co-aligned in-plane with rectangular unit cell, differs markedly from the prototypical 2D hexagonal magnets CrI3 and Cr2Ge2Te6 with out-of-plane moments. Moreover, our SHG analysis suggests that the order parameters of the ferromagnetic monolayer and the antiferromagnetic bilayer are the magnetic dipole and the magnetic toroidal moments, respectively. These findings establish CrSBr as an exciting 2D magnetic semiconductor and SHG as a powerful tool to probe 2D magnetic symmetry, opening the door to the exploration of coupling between magnetic order and excitonic/electronic properties, as well as the magnetic toroidal moment, in a broad range of applications.

cond-mat.mtrl-sci↗

arXiv2019

Doping-induced superconductivity in the van der Waals superatomic crystal Re$_6$Se$_8$Cl$_2$

Superatomic crystals are composed of discrete modular clusters that emulate the role of atoms in traditional atomic solids$^{1-4}$. Owing to their unique hierarchical structures, these materials are promising candidates to host exotic phenomena, such as superconductivity and magnetism that can be revealed through doping$^{5-10}$. Low-dimensional superatomic crystals hold great promise as electronic components$^{11,12}$, enabling these properties to be applied to nanocircuits, but the impact of doping in such compounds remains unexplored. Here we report the electrical transport properties of Re$_6$Se$_8$Cl$_2$, a two-dimensional superatomic semiconductor$^{13,14}$. Using an in situ current annealing technique, we find that this compound can be n-doped through Cl dissociation, drastically altering the transport behaviour from semiconducting to metallic and giving rise to superconductivity below $\sim$ 9 K. This work is the first example of superconductivity in a van der Waals (vdW) superatomic crystal; more broadly, it establishes a new chemical strategy to manipulate the electronic properties of vdW materials with labile ligands.

cond-mat.mtrl-sci↗

arXiv2019

Quasi-Phase-Matching in Chiral Materials

The second-order nonlinear optical coefficients associated with chirality differ in sign for the two mirror-image forms (enantiomers) of a chiral material. Structures comprised of alternating stacks of the enantiomers can therefore be used for quasi-phase-matched frequency conversion, as we demonstrate here by second-harmonic generation from Langmuir-Blodgett films of a helicenebisquinone. Such structures could lead to new types of frequency converters in which both the second-order nonlinear response and quasi-phase-matching arise from the chirality of a material rather than its polar order. PACS numbers: 42.65.Ky, 42.70.Nq, 78.66.Qn

physics.chem-ph↗

arXiv2017

Coulomb engineering of the bandgap in 2D semiconductors

The ability to control the size of the electronic bandgap is an integral part of solid-state technology. Atomically-thin two-dimensional crystals offer a new approach for tuning the energies of the electronic states based on the interplay between the environmental sensitivity and unusual strength of the Coulomb interaction in these materials. By engineering the surrounding dielectric environment, we are able to tune the electronic bandgap in monolayers of WS2 and WSe2 by hundreds of meV. We exploit this behavior to present an in-plane dielectric heterostructure with a spatially dependent bandgap, illustrating the feasibility of our approach for the creation of lateral junctions with nanoscale resolution. This successful demonstration of bandgap engineering based on the non-invasive modification of the Coulomb interaction should enable the design of a new class of atomically thin devices to advance the limits of size and functionality for solid-state technologies.

cond-mat.mes-hall↗

arXiv2014

Atomically thin p-n junctions with van der Waals heterointerfaces

Semiconductor p-n junctions are essential building blocks for modern electronics and optoelectronics. In conventional semiconductors, a p-n junction produces depletion regions of free charge carriers at equilibrium and built-in potentials associated with uncompensated dopant atoms. Carrier transport across the junction occurs by diffusion and drift processes defined by the spatial extent of this region. With the advent of atomically thin van der Waals (vdW) materials and their heterostructures, we are now able to realize a p-n junction at the ultimate quantum limit. In particular, vdW junctions composed of p- and n-type semiconductors each just one unit cell thick are predicted to exhibit completely different charge transport characteristics than bulk junctions. Here we report the electronic and optoelectronic characterization of atomically thin p-n heterojunctions fabricated using vdW assembly of transition metal dichalcogenides (TMDCs). Across the p-n interface, we observe gate-tuneable diode-like current rectification and photovoltaic response. We find that the tunnelling-assisted interlayer recombination of the majority carriers is responsible for the tunability of the electronic and optoelectronic processes. Sandwiching an atomic p-n junction between graphene layers enhances collection of the photoexcited carriers. The atomically scaled vdW p-n heterostructures presented here constitute the ultimate quantum limit for functional electronic and optoelectronic components.

cond-mat.mes-hall↗

arXiv2010

Energy Transfer from Individual Semiconductor Nanocrystals to Graphene

Energy transfer from photoexcited zero-dimensional systems to metallic systems plays a prominent role in modern day materials science. A situation of particular interest concerns the interaction between a photoexcited dipole and an atomically thin metal. The recent discovery of graphene layers permits investigation of this phenomenon. Here we report a study of fluorescence from individual CdSe/ZnS nanocrystals in contact with single- and few-layer graphene sheets. The rate of energy transfer is determined from the strong quenching of the nanocrystal fluorescence. For single-layer graphene, we find a rate of ~ 4ns-1, in agreement with a model based on the dipole approximation and a tight-binding description of graphene. This rate increases significantly with the number of graphene layers, before approaching the bulk limit. Our study quantifies energy transfer to and fluorescence quenching by graphene, critical properties for novel applications in photovoltaic devices and as a molecular ruler.

physics.chem-ph↗

arXiv2008

Amine-Linked Single Molecule Circuits: Systematic Trends Across Molecular Families

A comprehensive review is presented of single molecule junction conductance measurements across families of molecules measured while breaking a gold point contact in a solution of molecules with amine end groups. A theoretical framework unifies the picture for the amine-gold link bonding and the tunnel coupling through the junction using Density Functional Theory based calculations. The reproducible electrical characteristics and utility for many molecules is shown to result from the selective binding between the gold electrodes and amine link groups through a donor-acceptor bond to undercoordinated gold atoms. While the bond energy is modest, the maximum force sustained by the junction is comparable to, but less than, that required to break gold point contacts. The calculated tunnel coupling provides conductance trends for all 41 molecule measurements presented here, as well as insight into the variability of conductance due to the conformational changes within molecules with torsional degrees of freedom. The calculated trends agree to within a factor of two of the measured values for conductance ranging from 10-7 G0 to 10-2 G0, where G0 is the quantum of conductance (2e2/h).

cond-mat.mes-hall↗

arXiv2006

Dependence of Single Molecule Junction Conductance on Molecular Conformation

The conductance of a single metal-molecule-metal junction depends critically on the conformations of the molecule. In the simple case of a biphenyl, two phenyl rings linked together by a single C-C bond, the conductance is expected to depend on the relative twist angle between the two rings, with the planar conformation having the highest conductance. A number of different techniques have measured the conductance of metal-molecule(s)-metal junctions. However, the conductance variation from junction to junction has made it difficult to verify even the simplest predictions about how molecules should behave in unimolecular devices. Here, using amine link groups to form single molecule junctions, we show a clear correlation between molecule conformation and junction conductance in a series of seven biphenyl molecules with different ring substitutions that alter the twist angle of the molecules. We find that the conductance for the series decreases with increasing twist angle, consistent with a cosine squared relation predicted theoretically for transport through pi-conjugated systems.

cond-mat.mes-hall↗

arXiv2006

Single-Molecule Circuits with Well-Defined Molecular Conductance

We measure the conductance of amine-terminated molecules by breaking Au point contacts in a molecular solution at room temperature. We find that the variability of the observed conductance for the diamine molecule-Au junctions is much less than the variability for diisonitrile and dithiol-Au junctions. This narrow distribution enables unambiguous conductance measurements of single molecules. For an alkane diamine series with 2-8 carbon atoms in the hydrocarbon chain, our results show a systematic trend in the conductance from which we extract a tunneling decay constant of 0.91 +/- 0.03 per methylene group. We hypothesize that the diamine link binds preferentially to undercoordinated Au atoms in the junction. This is supported by density functional theory-based calculations that show the amine binding to a gold adatom with sufficient angular flexibility for easy junction formation but well-defined electronic coupling of the N lone pair to the Au. Therefore, the amine linkage leads to well-defined conductance measurements of a single molecule junction in a statistical study.

cond-mat.mtrl-sci↗