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Collin C. D. Frink

Publications and source records attributed to Collin C. D. Frink.

4 recordsLinked to original sources

CANOE: Classically Assisted Non-Orthogonal Eigensolver

In the early fault-tolerant regime, where quantum resources remain limited, hybrid quantum-classical strategies offer one possible route toward quantum advantage. We introduce CANOE, the Classically Assisted Non-Orthogonal Eigensolver, as such an approach, distributing Rayleigh-Ritz basis states between quantum and classical hardware. This approach leverages the expressive power of quantum states, which are costly to reproduce classically, while augmenting them with a large pool of classically generated basis states that can be incorporated at negligible computational cost. We validate this through numerical simulations of a 76-qubit chromium atom system, quantifying how each additional quantum basis state enhances ground-state representability and how the inclusion of classical states further amplifies this improvement. Such a hybrid basis framework necessarily requires an efficient protocol on quantum hardware for evaluating overlaps between quantum and classical states in the resulting generalized eigenvalue formulation. We address this by introducing a histogram-based protocol and demonstrate through numerical simulations that it can approach chemical accuracy at moderate sampling cost. To solve the resulting generalized eigenvalue problem stably, CANOE incorporates a Schur-complement-based stabilization procedure that mitigates ill-conditioning caused by linear dependencies in the hybrid basis. Taken together, these results position CANOE as a practical framework for combining limited quantum resources with expansive classical resources for early fault-tolerant quantum simulations.

quant-ph

Hardware Efficient Quantum Kernels Using Multimode Bulk Acoustic Resonators

The kernel trick is a widely applicable technique in machine learning domains that maps datasets that are difficult to classify into a computationally friendly feature space. As the dimension of the dataset scales, these kernel calculations can quickly become computationally intractable or data inefficient. In this work, we extend prior efforts in quantum kernel design for Kerr nonlinear devices by implementing time-dependent simulations of a Kerr-qubit coupled to acoustic resonators. For experimentally feasible parameters, we demonstrate that the Kerr nonlinearity directly induces non-classical behavior in the multimode system, which we use to define and analyze a quantum-enhanced kernel. Finally, we present a brief scaling characterization that demonstrates the computational intractability of classically simulating the kernel as the number of resonators scales.

quant-ph

Reducing strain fluctuations in quantum dot devices by gate-layer stacking

Nanofabricated metal gate electrodes are commonly used to confine and control electrons in electrostatically defined quantum dots. However, these same gates impart strain-induced potential fluctuations that can potentially impair device functionality. Here we investigate strain fluctuations in Si/SiGe heterostructures, caused by (i) lattice mismatch, (ii) materials-dependent thermal contraction, and (iii) depositional stress in the metal gates. By simulating gate geometries, ranging from simple to realistically complicated, we identify two opposing effects in overlapping gate structures: (a) gate-driven behavior arising from isolated gates vs (b) oxide-driven behavior arising from the thin oxides separating the gates in an overlapping geometry. These limiting behaviors induce strains of opposite sign, pointing towards the possibility of suppressing strain fluctuations through careful design. Here, we demonstrate nearly total suppression of short-range strain fluctuation through device optimization. These results suggest that strain fluctuations should not pose an insurmountable challenge to qubit uniformity, provided that oxide and overlapping gate thicknesses can be tuned.

cond-mat.mes-hall

Coupling conduction-band valleys in SiGe heterostructures via shear strain and Ge concentration oscillations

Engineering conduction-band valley couplings is a key challenge for Si-based spin qubits. Recent work has shown that the most reliable method for enhancing valley couplings entails adding Ge concentration oscillations to the quantum well. However, ultrashort oscillation periods are difficult to grow, while long oscillation periods do not provide useful improvements. Here, we show that the main benefits of short-wavelength oscillations can be achieved in long-wavelength structures through a second-order coupling process involving Brillouin-zone folding induced by shear strain. We finally show that such strain can be achieved through common fabrication techniques, making this an exceptionally promising system for scalable quantum computing.

cond-mat.mes-hall