arXiv subjects

Congcong Chai

Publications and source records attributed to Congcong Chai.

5 recordsLinked to original sources

arXiv2023

Evidence for an Excitonic Insulator State in Ta$_2$Pd$_3$Te$_5$

The excitonic insulator (EI) is an exotic ground state of narrow-gap semiconductors and semimetals arising from spontaneous condensation of electron-hole pairs bound by attractive Coulomb interaction. Despite research on EIs dating back to half a century ago, their existence in real materials remains a subject of ongoing debate. In this study, through systematic experimental and theoretical investigations, we provide evidence for the existence of an EI ground state in a van der Waals compound Ta$_2$Pd$_3$Te$_5$. Density-functional-theory calculations suggest that it is a semimetal with a small band overlap, whereas various experiments exhibit an insulating ground state with a clear band gap. Upon incorporating electron-hole Coulomb interaction into our calculations, we obtain an EI phase where the electronic symmetry breaking opens a many-body gap. Angle-resolved photoemission spectroscopy measurements exhibit that the band gap is closed with a significant change in the dispersions as the number of thermally excited charge carriers becomes sufficiently large in both equilibrium and nonequilibrium states. Structural measurements reveal a slight breaking of crystal symmetry with exceptionally small lattice distortion in the insulating state, which cannot account for the significant gap opening. Therefore, we attribute the insulating ground state with a gap opening in Ta$_2$Pd$_3$Te$_5$ to exciton condensation, where the coupling to the symmetry-breaking electronic state induces a subtle change in the crystal structure.

cond-mat.mtrl-sci↗

arXiv2023

Evidence of a hydrated mineral enriched in water and ammonium molecules in the Chang'e-5 lunar sample

The presence and distribution of water on the Moon are fundamental to our understanding of the Earth-Moon system. Despite extensive research and remote detection, the origin and chemical form of lunar water (H2O) have remained elusive. In this study, we present the discovery of a hydrated mineral, (NH4)MgCl3*6H2O, in lunar soil samples returned by the Chang'e-5 mission, containing approximately 41 wt% H2O. The mineral's structure and composition closely resemble novograblenovite, a terrestrial fumarole mineral formed through the reaction of hot basalt with water-rich volcanic gases, and carnallite, an earth evaporite mineral. We rule out terrestrial contamination or rocket exhaust as the origin of this hydrate, based on its chemical and isotopic compositions and formation conditions. The presence of ammonium indicates a more complex lunar degassing history and highlights its potential as a resource for lunar habitation. Our findings also suggest that water molecules can persist in sunlit areas of the Moon as hydrated salt, providing crucial constraints to the fugacity of water and ammonia vapor in lunar volcanic gases.

astro-ph.EP↗

arXiv2023

High quality and wafer-scale cubic silicon carbide single crystals

Silicon carbide (SiC) is an important semiconductor material for fabricating power electronic devices that exhibit higher switch frequency, lower energy loss and substantial reduction both in size and weight in comparison with its Si-based counterparts1-4. Currently, most devices, such as metal-oxide-semiconductor field effect transistors, which are core devices used in electric vehicles, photovoltaic industry and other applications, are fabricated on a hexagonal polytype 4H-SiC because of its commercial availability5. Cubic silicon carbide (3C-SiC), the only cubic polytype, has a moderate band gap of 2.36 eV at room-temperature, but a superior mobility and thermal conduction than 4H-SiC4,6-11. Moreover, the much lower concentration of interfacial traps between insulating oxide gate and 3C-SiC helps fabricate reliable and long-life devices7-10,12-14. The growth of 3C-SiC crystals, however, has remained a challenge up to now despite of decades-long efforts by researchers because of its easy transformation into other polytypes during growth15-19, limiting the 3C-SiC based devices. Here, we report that 3C-SiC can be made thermodynamically favored from nucleation to growth on a 4H-SiC substrate by top-seeded solution growth technique(TSSG), beyond what's expected by classic nucleation theory. This enables the steady growth of quality and large sized 3C-SiC crystals (2~4-inch in diameter and 4.0~10.0 mm in thickness) sustainable. Our findings broaden the mechanism of hetero-seed crystal growth and provide a feasible route to mass production of 3C-SiC crystals,offering new opportunities to develop power electronic devices potentially with better performances than those based on 4H-SiC.

cond-mat.mtrl-sci↗

arXiv2023

Percolation-induced resistivity drop in cold-pressed LuH2

The stoichiometric bulk LuH2 is a paramagnetic metal with high electrical conductivity comparable to simple metals. Here we show that the resistivity of cold-pressed (CP) LuH2 samples varies sensitively upon modifying the grain size or surface conditions via the grinding process, i.e., the CP pellets made of commercially purchased LuH2 powder remain metallic but exhibit thousands of times higher resistivity, while additional grinding of LuH2 powders in air further enhances the resistivity and even results in weakly localized behaviors. For these CP samples, interestingly, we can occasionally observe abrupt resistivity drops at high temperatures, which also show dependences on magnetic fields and electrical current. Measurements of variable-temperature XRD, magnetic susceptibility, and specific heat exclude the possibilities of structural, magnetic, and superconducting transitions for the observed resistivity drops. Instead, we tentatively attribute these above observations to the presence of insulating layers on the grain surface due to the modification of hydrogen stoichiometry or the pollution by oxygen/nitrogen. Percolation of the metallic grains through the insulating surfaces can explain the sudden drop in resistivity. The present results thus call for caution in asserting the resistivity drops as superconductivity and invalidate the background subtraction in analyzing the resistivity data.

cond-mat.supr-con↗

arXiv2022

A new quasi-one-dimensional superconductor parent compound NaMn$_6$Bi$_5$ with lower antiferromagnetic transition temperatures

Mn-based superconductor is rare and recently reported in quasi-one-dimensional KMn$_6$Bi$_5$ with [Mn$_6$Bi$_5$]-columns under high pressure. Here we report the synthesis, magnetic properties, electrical resistivity, and specific heat capacity of the newly-discovered quasi-one-dimensional NaMn$_6$Bi$_5$ single crystal. Compared with other AMn$_6$Bi$_5$ (A = K, Rb, and Cs), NaMn$_6$Bi$_5$ has larger intra-column Bi-Bi bond length, which may result in the two decoupled antiferromagnetic transitions at 47.3 K and 52.3 K. The relatively lower antiferromagnetic transition temperatures make NaMn$_6$Bi$_5$ a more suitable platform to explore Mn-based superconductors. Anisotropic resistivity and non-Fermi liquid behavior at low temperature are observed. Heat capacity measurement reveals that NaMn$_6$Bi$_5$ has similar Debye temperature with those of AMn$_6$Bi$_5$ (A = K and Rb), whereas the Sommerfeld coefficient is unusually large. Using first-principles calculations, the quite different density of states and an unusual enhancement near the Fermi level are observed for NaMn$_6$Bi$_5$, when compared with those of other AMn$_6$Bi$_5$ (A = K, Rb, and Cs) compounds.

cond-mat.supr-con↗