Connor Cremers | Searcharxiv

arXiv2026

Induction-heated resonant reactors for electrified thermochemistry

We present induction-heated resonant reactors, a new concept in electrified thermochemistry in which the reactor itself serves as a volumetric electromagnetic resonator heated through resonant wireless power transfer. We use the Swiss roll resonator as a model system and show that it can be designed to support uniform volumetric heating profiles and enhanced heat transfer characteristics, creating opportunities for process intensification in scaled systems. Compared to conventional (i.e., non-resonant) induction heating systems, resonant reactors can achieve exceptionally high system efficiencies through the combination of near-unity power-to-heat efficiencies and low thermal losses, both enabled by the utilization of resonant energy transfer. These concepts demonstrate how the integration of electromagnetic power transduction with thermochemical reaction engineering enables new opportunities for utilizing green electricity in sustainable chemical conversion.

eess.SY↗

arXiv2024

Mobility and Threshold Voltage Extraction in Transistors with Gate-Voltage-Dependent Contact Resistance

The mobility of emerging (e.g., two-dimensional, oxide, organic) semiconductors is commonly estimated from transistor current-voltage measurements. However, such devices often experience contact gating, i.e., electric fields from the gate modulate the contact resistance during measurements, which can lead conventional extraction techniques to estimate mobility incorrectly even by a factor >2. This error can be minimized by measuring transistors at high gate-source bias, |$V_\mathrm{gs}$|, but this regime is often inaccessible in emerging devices that suffer from high contact resistance or early gate dielectric breakdown. Here, we propose a method of extracting mobility in transistors with gate-dependent contact resistance that does not require operation at high |$V_\mathrm{gs}$|, enabling accurate mobility extraction even in emerging transistors with strong contact gating. Our approach relies on updating the transfer length method (TLM) and can achieve <10% error even in regimes where conventional techniques overestimate mobility by >2$\times$.

physics.app-ph↗