arXiv subjects

Corentin Déprez

Publications and source records attributed to Corentin Déprez.

11 recordsLinked to original sources

arXiv2026

Distributing entanglement between distant semiconductor qubit registers using a shared-control shuttling link

Semiconductor quantum processors have potential to scale to modular quantum computers, in which qubit registers are coupled by quantum links, enabling high connectivity and space for control circuitry. Individual spin-qubit registers have progressed to two-dimensional systems and execution of small quantum algorithms. Separately, high-fidelity spin shuttling has been demonstrated in linear channels defined by individual gate electrodes. Here, we realize the first shared-control shuttling link integrated between distant qubit registers to demonstrate quantum entanglement in a basic modular quantum processor based on hole spin qubits in germanium. We develop a protocol to compensate for spin-orbit-induced rotations during qubit transfer, allowing for shuttling between qubit registers separated by more than one micrometer in approximately a hundred nanoseconds. Combining local qubit operation with coherent shuttling, we generate Bell states formed by spins residing in separate registers. Characterizing them using quantum state tomography, we demonstrate entanglement between spin qubits in distant registers.

cond-mat.mes-hall↗

arXiv2024

Operating semiconductor quantum processors with hopping spins

Qubits that can be efficiently controlled are essential for the development of scalable quantum hardware. While resonant control is used to execute high-fidelity quantum gates, the scalability is challenged by the integration of high-frequency oscillating signals, qubit crosstalk and heating. Here, we show that by engineering the hopping of spins between quantum dots with site-dependent spin quantization axis, quantum control can be established with discrete signals. We demonstrate hopping-based quantum logic and obtain single-qubit gate fidelities of 99.97\%, coherent shuttling fidelities of 99.992\% per hop, and a two-qubit gate fidelity of 99.3\%, corresponding to error rates that have been predicted to allow for quantum error correction. We also show that hopping spins constitute a tuning method by statistically mapping the coherence of a 10-quantum dot system. Our results show that dense quantum dot arrays with sparse occupation could be developed for efficient and high-connectivity qubit registers.

cond-mat.mes-hall↗

arXiv2024

Evidence for correlated electron pairs and triplets in quantum Hall interferometers

Pairing of electrons is ubiquitous in electronic systems featuring attractive inter-electron interactions, as exemplified in superconductors. Counter-intuitively, it can also be mediated in certain circumstances by the repulsive Coulomb interaction alone. Quantum Hall (QH) Fabry-Pérot interferometers (FPIs) tailored in two-dimensional electron gas under a perpendicular magnetic field has been argued to exhibit such unusual electron pairing seemingly without attractive interaction. Here, we show evidence in graphene QH FPIs revealing not only a similar electron pairing at bulk filling factor nu=2 but also an unforeseen emergence of electron tripling characterized by a fractional Aharonov-Bohm flux period h/3e (h is the Planck constant and e the electron charge) at nu=3. Leveraging a novel plunger-gate spectroscopy, we demonstrate that electron pairing (tripling) involves correlated charge transport on two (three) entangled QH edge channels. This spectroscopy indicates a quantum interference flux-periodicity determined by the sum of the phases acquired by the distinct QH edge channels having slightly different interfering areas. While recent theory invokes the dynamical exchange of neutral magnetoplasmons -- dubbed neutralons -- as mediator for electron pairing, our discovery of three entangled QH edge channels with apparent electron tripling defies understanding and introduces a new three-body problem for interacting fermions.

cond-mat.mes-hall↗

arXiv2024

Low disorder and high valley splitting in silicon

The electrical characterisation of classical and quantum devices is a critical step in the development cycle of heterogeneous material stacks for semiconductor spin qubits. In the case of silicon, properties such as disorder and energy separation of conduction band valleys are commonly investigated individually upon modifications in selected parameters of the material stack. However, this reductionist approach fails to consider the interdependence between different structural and electronic properties at the danger of optimising one metric at the expense of the others. Here, we achieve a significant improvement in both disorder and valley splitting by taking a co-design approach to the material stack. We demonstrate isotopically-purified, strained quantum wells with high mobility of 3.14(8)$\times$10$^5$ cm$^2$/Vs and low percolation density of 6.9(1)$\times$10$^{10}$ cm$^{-2}$. These low disorder quantum wells support quantum dots with low charge noise of 0.9(3) $μ$eV/Hz$^{1/2}$ and large mean valley splitting energy of 0.24(7) meV, measured in qubit devices. By striking the delicate balance between disorder, charge noise, and valley splitting, these findings provide a benchmark for silicon as a host semiconductor for quantum dot qubits. We foresee the application of these heterostructures in larger, high-performance quantum processors.

cond-mat.mes-hall↗

arXiv2023

Single-electron occupation in quantum dot arrays at selectable plunger gate voltage

The small footprint of semiconductor qubits is favourable for scalable quantum computing. However, their size also makes them sensitive to their local environment and variations in gate structure. Currently, each device requires tailored gate voltages to confine a single charge per quantum dot, clearly challenging scalability. Here, we tune these gate voltages and equalize them solely through the temporary application of stress voltages. In a double quantum dot, we reach a stable (1,1) charge state at identical and predetermined plunger gate voltage and for various interdot couplings. Applying our findings, we tune a 2$\times$2 quadruple quantum dot such that the (1,1,1,1) charge state is reached when all plunger gates are set to 1 V. The ability to define required gate voltages may relax requirements on control electronics and operations for spin qubit devices, providing means to advance quantum hardware.

cond-mat.mes-hall↗

arXiv2023

Coherent spin qubit shuttling through germanium quantum dots

Quantum links can interconnect qubit registers and are therefore essential in networked quantum computing. Semiconductor quantum dot qubits have seen significant progress in the high-fidelity operation of small qubit registers but establishing a compelling quantum link remains a challenge. Here, we show that a spin qubit can be shuttled through multiple quantum dots while preserving its quantum information. Remarkably, we achieve these results using hole spin qubits in germanium, despite the presence of strong spin-orbit interaction. We accomplish the shuttling of spin basis states over effective lengths beyond 300 $μ$m and demonstrate the coherent shuttling of superposition states over effective lengths corresponding to 9 $μ$m, which we can extend to 49 $μ$m by incorporating dynamical decoupling. These findings indicate qubit shuttling as an effective approach to route qubits within registers and to establish quantum links between registers.

cond-mat.mes-hall↗

arXiv2023

A vertical gate-defined double quantum dot in a strained germanium double quantum well

Gate-defined quantum dots in silicon-germanium heterostructures have become a compelling platform for quantum computation and simulation. Thus far, developments have been limited to quantum dots defined in a single plane. Here, we propose to advance beyond planar systems by exploiting heterostructures with multiple quantum wells. We demonstrate the operation of a gate-defined vertical double quantum dot in a strained germanium double quantum well. In quantum transport measurements we observe stability diagrams corresponding to a double quantum dot system. We analyze the capacitive coupling to the nearby gates and find two quantum dots accumulated under the central plunger gate. We extract the position and estimated size, from which we conclude that the double quantum dots are vertically stacked in the two quantum wells. We discuss challenges and opportunities and outline potential applications in quantum computing and quantum simulation.

cond-mat.mes-hall↗

arXiv2022

Electrical control of uniformity in quantum dot devices

Highly uniform quantum systems are essential for the practical implementation of scalable quantum processors. While quantum dot spin qubits based on semiconductor technology are a promising platform for large-scale quantum computing, their small size makes them particularly sensitive to their local environment. Here, we present a method to electrically obtain a high degree of uniformity in the intrinsic potential landscape using hysteretic shifts of the gate voltage characteristics. We demonstrate the tuning of pinch-off voltages in quantum dot devices over hundreds of millivolts that then remain stable at least for hours. Applying our method, we homogenize the pinch-off voltages of the plunger gates in a linear array for four quantum dots reducing the spread in pinch-off voltage by one order of magnitude. This work provides a new tool for the tuning of quantum dot devices and offers new perspectives for the implementation of scalable spin qubit arrays.

cond-mat.mes-hall↗

arXiv2022

Probing resonating valence bonds on a programmable germanium quantum simulator

Simulations using highly tunable quantum systems may enable investigations of condensed matter systems beyond the capabilities of classical computers. Quantum dots and donors in semiconductor technology define a natural approach to implement quantum simulation. Several material platforms have been used to study interacting charge states, while gallium arsenide has also been used to investigate spin evolution. However, decoherence remains a key challenge in simulating coherent quantum dynamics. Here, we introduce quantum simulation using hole spins in germanium quantum dots. We demonstrate extensive and coherent control enabling the tuning of multi-spin states in isolated, paired, and fully coupled quantum dots. We then focus on the simulation of resonating valence bonds and measure the evolution between singlet product states which remains coherent over many periods. Finally, we realize four-spin states with $s$-wave and $d$-wave symmetry. These results provide means to perform non-trivial and coherent simulations of correlated electron systems.

quant-ph↗

arXiv2021

A tunable Fabry-Pérot quantum Hall interferometer in graphene

Electron interferometry with quantum Hall edge channels holds promise for probing and harnessing exotic exchange statistics of non-Abelian anyons. In semiconductor heterostructures, however, quantum Hall interferometry has proven challenging and often obscured by charging effects. Here we show that high-mobility monolayer graphene equipped with a series of gate-tunable quantum point contacts that act as electron beam-splitters provides a model system to perform Fabry-Pérot quantum Hall interferometry. We observe high-visibility Aharonov-Bohm interference free of charging effects and widely tunable through electrostatic gating or magnetic field, in remarkable agreement with theory. A coherence length of $\mathbf{10 \,μm}$ at a temperature of $0.02$ K allows us to further achieve coherently-coupled double Fabry-Pérot interferometry. Our results open a new avenue for quantum Hall interferometry and the exploitation of topological excitations for quantum computation.

cond-mat.mes-hall↗

arXiv2019

Helical quantum Hall phase in graphene on SrTiO$_3$

The ground state of charge neutral graphene under perpendicular magnetic field was predicted to be a quantum Hall topological insulator with a ferromagnetic order and spin-filtered, helical edge channels. In most experiments, however, an otherwise insulating state is observed and is accounted for by lattice-scale interactions that promote a broken-symmetry state with gapped bulk and edge excitations. We tuned the ground state of the graphene zeroth Landau level to the topological phase via a suitable screening of the Coulomb interaction with a SrTiO$_3$ high-$k$ dielectric substrate. We observed robust helical edge transport emerging at a magnetic field as low as 1 tesla and withstanding temperatures up to 110 kelvins over micron-long distances. This new and versatile graphene platform opens new avenues for spintronics and topological quantum computation.

cond-mat.mes-hall↗