arXiv subjects

Cui-Zu Chang

Publications and source records attributed to Cui-Zu Chang.

At least 19 recordsLinked to original sources

arXiv2026

Signatures of nodal superconductivity in stoichiometric FeTe

Superconductivity in stoichiometric FeTe opens access to the FeTe endpoint of the Fe(Se,Te) phase diagram, yet the nature of its superconducting pairing state remains unresolved. In this work, we combine scanning superconducting quantum interference device (SQUID) microscopy, electrical transport, scanning tunneling microscopy and spectroscopy (STM/S), and mean-field calculations to investigate the local superfluid response and pairing state of FeTe thin films with tunable stoichiometry. Even in stoichiometric FeTe, we observe micrometer-scale spatial variations in both superfluid stiffness and superconducting transition temperature $T_c$, while the London penetration depth remains non-saturating down to 0.02$T_c$ and follows a power-law temperature dependence with an exponent of approximately 1-1.5. Together with a V-shaped low-energy density of states and two-gap modeling, these results indicate a superconducting state with gap nodes or deep minima, consistent with either a $d$-wave or nodal $s$-wave superconducting state. Our findings establish stoichiometric FeTe as a distinct superconducting regime that departs from the trend toward more isotropic gaps at intermediate Se/Te compositions, providing a new benchmark for modern microscopic theories of iron-chalcogenide superconductivity. Our work also reveals a crossover from weak to rapid suppression of $T_c$ as superfluid stiffness decreases, connecting FeTe to the broader phenomenology observed in unconventional superconductors.

cond-mat.supr-con↗

arXiv2026

Enhanced Superconductivity in Multilayer FeSe Films by Simplified Molecular Beam Epitaxy

Multi-unit-cell (UC) \b{eta}-FeSe films grown on SrTiO3(100) continue to attract attention because of the significant enhancement in the superconducting transition temperature (Tc) compared to that in bulk FeSe. In prior reports of molecular beam epitaxy (MBE)-grown \b{eta}-FeSe/SrTiO3(100), elaborate growth protocols have been used to achieve enhanced Tc, leading to a general belief that careful pre-treatment of the SrTiO3 substrate and post-growth annealing in ultrahigh vacuum (UHV) are essential. Here, we report a greatly simplified protocol for the MBE growth of superconducting multi-UC \b{eta}-FeSe films on SrTiO3(100), eliminating the need for careful substrate pre-treatment and post-growth UHV annealing while still achieving an enhanced Tc. With appropriate capping, epitaxial films with 14 UC thickness exhibit a zero-resistance transition temperature Tc ~ 20 K in ex situ electrical transport measurements. The MBE optimization process is guided by the growth-parameter dependencies of film morphology and structural properties, as characterized by reflection high-energy electron diffraction, X-ray diffraction, atomic force microscopy, and scanning transmission electron microscopy.

cond-mat.supr-con↗

arXiv2026

Interface-Confined Superconductivity with Thickness-Independent Superfluid Stiffness in (Pb,Sn)Te/FeTe Bilayers

Interface-induced superconductivity in FeTe-based heterostructures provides a promising route toward topological superconductivity, yet the roles of the neighboring layers topology, symmetry, and electronic structure remain unresolved. In this work, we employ molecular beam epitaxy to grow Pb1-xSnxTe/FeTe bilayers and use angle-resolved photoemission spectroscopy to track the evolution of the Pb1-xSnxTe layer from a trivial insulator to a topological crystalline insulator hosting multiple Dirac surface states. Electrical transport measurements reveal robust superconductivity throughout the entire composition range, with a nearly constant superconducting transition temperature of ~12 K despite substantial changes in the electronic structure and topology of Pb1-xSnxTe. Double-coil mutual-inductance measurements further reveal comparable superfluid stiffness across the topological phase transition and nearly thickness-independent superfluid stiffness despite large variations in the constituent-layer thicknesses, demonstrating that superconductivity is confined near the interface. These results establish that superconductivity in FeTe-based heterostructures is largely insensitive to the topology, crystal symmetry, and detailed electronic structure of the neighboring layer, supporting a primary origin in modifications to the FeTe layer. The coexistence of interface-confined superconductivity and tunable multiple Dirac surface states in Pb1-xSnxTe/FeTe bilayers provides a versatile platform for exploring topological superconductivity and interactions among multiple Majorana zero modes.

cond-mat.supr-con↗

arXiv2026

Imaging Surface Magnetization in Altermagnetic MnTe Films

Altermagnets with pronounced spin-splitting band structure, unconventional magnetic and crystal symmetries, and exotic magneto-transport properties have received immense interest in cutting-edge spintronics, materials science, and condensed matter physics research. Microscopic imaging of spontaneous magnetic domains and phases in altermagnets constitutes an important step for investigating their underlying material properties, mechanisms, and spin behaviors. Taking advantage of scanning-probe quantum microscopy, here we report nanoscale quantum sensing of a prototypical altermagnet candidate $\alpha$-MnTe. We visualize evanescent magnetization and the associated magnetic domains in epitaxial MnTe films, which allows external magnetic fields to control the intrinsic altermagnetic order and configurations. By evaluating a series of MnTe films with different thicknesses down to the atomic scale, we further present evidence for the interfacial origin of the observed weak magnetization and show its correlation with the anomalous Hall effect in MnTe film. Our results advance the current understanding of emergent altermagnetism, providing insights into future material design of altermagnet-integrated spintronic devices.

cond-mat.mtrl-sci↗

arXiv2026

Designer Quantum States in Magnetic Topological Insulator Multilayers

Magnetic topological insulators (TIs) provide a highly tunable platform for engineering quantum states that emerge from the interplay between topology and magnetism. In this review article, we summarize experimental progress over the past decade in designing magnetic TI multilayers by molecular beam epitaxy (MBE). By treating magnetically doped and undoped TI layers as topological Legos, we discuss how layer thickness, magnetic doping, heterostructure architecture, and stacking sequence can be used to control magnetic exchange gaps, interlayer coupling, and the Chern number C with atomic-layer precision. We first briefly review the realization of the C = 1 quantum anomalous Hall (QAH) effect in uniformly Cr-doped (Bi,Sb)2Te3 films in 2013 and uniformly V-doped (Bi,Sb)2Te3 films in 2015. We then discuss how Cr-doped and undoped (Bi,Sb)2Te3 layers can be combined to realize the C = 1 QAH effect in magnetically modulation-doped trilayers, including its extension into the three-dimensional (3D) regime. Next, we review the development of high-C QAH states, engineered plateau phase transitions, mesoscopic QAH devices, and electrical switching of chiral edge-current chirality. Finally, we discuss the realizations of axion insulator and C = 1/2 parity anomaly states in asymmetric magnetic TI trilayers. These advances establish magnetic TI multilayers as a versatile materials platform for creating new designer quantum states, including synthetic Weyl semimetal and QAH metal phases, and for probing the topological magnetoelectric effect in thick axion insulators and 3D QAH insulators.

cond-mat.mes-hall↗

arXiv2026

Designing Magnetic Topological Insulator Trilayers for Highly-Efficient Spin-Orbit Torque Switching

Spin-orbit torque (SOT) enables efficient electrical control of magnetization, offering a pathway towards low-power spintronic devices. Magnetic topological insulators (TIs), with spin-momentum-locked surface states and intrinsic ferromagnetism, provide a unique platform for realizing SOT switching of edge current chirality in quantum anomalous Hall (QAH) insulators. In this work, we employ molecular beam epitaxy to synthesize a series of magnetic TI trilayers with controlled layer thicknesses on heat-treated SrTiO3(111) substrates. Electrical transport measurements reveal that SOT-driven magnetization reversal and the associated switching of edge current chirality are governed by the SrTiO3(111) substrate-induced charging effect, which generates an asymmetric chemical-potential alignment between the top and bottom magnetic TI layers. Furthermore, we demonstrate that the switching polarity and efficiency can be tuned through heterostructure design, gate voltage, and in-plane magnetic field, consistent with SOT symmetry. These findings identify chemical potential asymmetry as the origin of the large SOT switching ratio in magnetic TI trilayers and establish a route for electrical control of edge current chirality in QAH insulators. This work advances the understanding of SOT switching mechanism in magnetic topological materials and paves the way for next-generation, energy-efficient QAH-based logic and memory devices.

cond-mat.mes-hall↗

arXiv2026

Stoichiometric FeTe is a Superconductor

Iron-based superconductors are a fascinating family of materials in which multiple electronic bands and strong antiferromagnetic (AFM) correlations are key ingredients for competing ground states, including antiferromagnetism, electronic nematicity, and unconventional superconductivity. FeTe, unlike its superconducting isostructural counterpart FeSe, has long been regarded as an AFM metal sans superconductivity. In this work, we employ molecular beam epitaxy to grow FeTe films and perform post-growth annealing under a Te flux. By performing spin-polarized scanning tunneling microscopy and spectroscopy, we demonstrate that the AFM order in as-grown FeTe films is induced by interstitial Fe atoms that disrupt the ideal 1:1 stoichiometry. Remarkably, the removal of these interstitial Fe atoms through Te annealing yields stoichiometric FeTe films that show no AFM order and instead exhibit robust superconductivity with a critical temperature of ~13.5K. This superconducting state is further confirmed by the observation of Cooper pair tunneling, zero electrical resistance, and the Meissner effect. Therefore, our results demonstrate that stoichiometric FeTe is inherently a superconductor, overturning a long-held view that it is an AFM metal. This work clarifies the origin of superconductivity in FeTe-based heterostructures and demonstrates the importance of stoichiometry control in understanding the competition between AFM and superconductivity in iron-based superconductors.

cond-mat.supr-con↗

arXiv2026

Moire Engineering of Cooper-Pair Density Modulation States

Cooper-pair density modulation (CPDM) states are superconducting phases in which the order parameter varies periodically in real space without breaking translational symmetry. Recently, moire superlattices in layered materials have emerged as powerful platforms for engineering charge density with tunable lattice symmetry, offering a new route to creating and controlling CPDM states. In this work, we demonstrate moire-induced CPDM states in a bilayer heterostructure formed by epitaxially stacking one quintuple layer (1 QL) of topological insulator Sb2Te3 on a six-unit-cell (6 UC) antiferromagnetic FeTe layer. Scanning tunneling microscopy and spectroscopy (STM/S) measurements reveal a moiré superlattice formed between the hexagonal Te lattice of Sb2Te3 and the square Te lattice of FeTe, which spatially modulates the two superconducting gaps of the 1 QL Sb2Te3/6 UC FeTe bilayer. Our Josephson STM/S measurements provide direct real-space imaging of the CPDM states with a wavelength corresponding to the periodicity of the moire superlattice. By substituting Sb2Te3 with Bi2Te3, we achieve control over both the periodicity and magnitude of the CPDM states. Our work demonstrates an epitaxial strategy for synthesizing moire superlattices from materials with different crystal symmetries and reveals a new mechanism for engineering CPDM states in designer bilayer heterostructures.

cond-mat.supr-con↗

arXiv2026

Surface-State-Driven Anomalous Hall Effect in Altermagnetic MnTe Films

Altermagnets have recently emerged as a new class of magnetic materials that combine compensated magnetic order with spin-split electronic band structures. In this work, we employ molecular beam epitaxy to grow MnTe thin films with controlled thickness on InP(111)A substrates. By performing angle-resolved photoemission spectroscopy measurements, we observe a large spin splitting of ~230 meV for bulk bands well below the Fermi level and identify surface states that cross the Fermi level. Electrical transport measurements reveal that a robust anomalous Hall (AH) effect persists down to 2 K and an AH sign reversal occurs near 175 K. By systematically tuning film thickness, growth conditions, and interfacial structure, we demonstrate that the AH response in MnTe films originates from the Berry curvature of surface states rather than from bulk bands. Our first-principles calculations reveal that this surface-state-driven AH effect is imprinted by the bulk altermagnetic order and remains unchanged for terminations with opposite Mn magnetic orientations. Our results establish a unique surface transport probe of bulk altermagnetism, demonstrate interface engineering as an effective route to generate and control the AH effect in altermagnets, and provide a unified understanding of the AH response in altermagentic MnTe films.

cond-mat.mtrl-sci↗

arXiv2026

Interplay of Quantum Size Effect and Tensile Strain on Surface Morphology of Sn(100) Islands

The quantum size effect (QSE) and strain effect are two key factors influencing the surface morphology of thin films, which can increase film surface roughness through QSE-induced thickness oscillation and strain-induced island formation, respectively. Surface roughness usually manifests in the early stages of film growth and diminishes beyond a critical thickness. In this work, we employ molecular beam epitaxy (MBE) to grow Sn(100) islands with varying thickness N on bilayer graphene-terminated 6H-SiC(0001) substrates. Scanning tunneling microscopy and spectroscopy measurements reveal an inverse surface roughness effect that highlights the interplay of QSE and misfit strain in shaping the surface morphology of Sn(100) islands. For N =< 10, the islands exhibit flat surfaces, while for N >= 26, the island surfaces become corrugated and patterned. For the intermediate range, i.e., 12 =< N =<24, both flat and patterned surfaces coexist, with the percentage coverage of the patterned surface oscillating as a function of N. By performing density functional theory calculations, we demonstrate that the unusual surface pattern evolution in our MBE-grown Sn(100) islands is a result of the interplay between QSE-induced surface roughing and tensile strain-induced smoothening effect.

cond-mat.mtrl-sci↗

arXiv2025

Boundary-Bulk Interplay in Nonlinear Topological Transport

Nonlinear transport has emerged as a powerful approach to probe the quantum geometry of electronic wavefunctions, such as Berry curvature and quantum metric, in topological materials. While nonlinear responses governed by bulk quantum geometry and band topology are well understood, the role of boundary modes (e.g., edge, surface, and hinge states) in nonlinear transport of topological materials remains largely unexplored. In this work, we demonstrate boundary-bulk interplay in nonlinear transport, including second-harmonic Hall and nonreciprocal longitudinal responses, in molecular beam epitaxy-grown magnetic topological insulator heterostructures. We find that the nonlinear transport is maximized when the sample is tuned slightly away from the well-quantized states, including the quantum anomalous Hall and axion insulator states. The sign and amplitude of the nonlinear transport depend on electrode configuration, magnetic order, and carrier type, establishing boundary mode transport as the dominant contributor. These findings, supported by symmetry analysis and nonlinear Landauer-B\"uttiker formalism, demonstrate that nonlinear transport in topological materials is governed by the interplay between boundary and bulk states. We further derive a universal relation between different lead voltages from electrode geometry symmetry, which allows us to distinguish nonlinear boundary transport from bulk contributions. Our work highlights the critical role of electrodes in nonlinear transport, which is absent in nonlinear optics, and establishes boundary modes as a key origin of the giant nonlinear response in nearly bulk-insulating topological materials. This insight opens new opportunities for engineering nonlinear transport through boundary-bulk interplay in future device applications of topological materials.

cond-mat.mes-hall↗

arXiv2025

Evidence for Half-Quantized Chiral Edge Current in a C = 1/2 Parity Anomaly State

A single massive Dirac surface band is predicted to exhibit a half-quantized Hall conductance, a hallmark of the C = 1/2 parity anomaly state in quantum field theory. Experimental signatures of the C = 1/2 parity anomaly state have been observed in semi-magnetic topological insulator (TI) bilayers, yet whether it supports a half-quantized chiral edge current remains elusive. Here, we observe a robust half-quantized Hall conductance plateau in a molecular beam epitaxy (MBE)-grown asymmetric magnetic TI trilayer under specific in-plane magnetic field regimes, corresponding to the C = 1/2 parity anomaly state. Within this state, both nonlocal and nonreciprocal transport signals are greatly enhanced, which we identify as direct evidence for a half-quantized chiral edge current localized at the boundary of the top gapped surface. Our numerical simulations demonstrate that this half-quantized chiral edge channel is the essential carrier of the observed half-quantized Hall conductance plateau, analogous to the quantized chiral edge channel in the C = 1 quantum anomalous Hall state. Our results provide experimental evidence for the half-quantized chiral edge transport in a C = 1/2 parity anomaly state. This work establishes asymmetric magnetic TI trilayers as a platform for probing single Dirac fermion physics and paves the way to explore a series of exciting phenomena in the C = 1/2 parity anomaly state, including the topological magnetoelectric effect and quantized magneto-optical response.

cond-mat.mes-hall↗

arXiv2025

Meissner Effect and Nonreciprocal Charge Transport in Non-Topological 1T-CrTe2/FeTe Heterostructures

Interface-induced superconductivity has recently been achieved by stacking a magnetic topological insulator layer on an antiferromagnetic FeTe layer. However, the mechanism driving this emergent superconductivity remains unclear. Here, we employ molecular beam epitaxy to grow a 1T-CrTe2 layer, a two-dimensional ferromagnet with a Curie temperature up to room temperature, on a FeTe layer. These 1T-CrTe2/FeTe heterostructures show superconductivity with a critical temperature of ~12 K. Through magnetic force microscopy measurements, we observe the Meissner effect on the surface of the 1T-CrTe2 layer. Our electrical transport measurements reveal that the 1T-CrTe2/FeTe heterostructures exhibit nonreciprocal charge transport behavior, characterized by a large magneto-chiral anisotropy coefficient. The enhanced nonreciprocal charge transport in 1T-CrTe2/FeTe heterostructures provides a promising platform for exploring the magnetically controllable superconducting diode effect.

cond-mat.supr-con↗

arXiv2025

Gate-Tunable Ambipolar Josephson Current in a Topological Insulator

Dirac surface states in a topological insulator (TI) with proximity-induced superconductivity offer a promising platform for realizing topological superconductivity and Majorana physics. However, in TIs, the Josephson effect is usually observed in regimes where transport is dominated by either substantial bulk conduction channels or unipolar surface states. In this work, we demonstrate gate-tunable ambipolar Josephson current in lateral Josephson junction (JJ) devices based on bulk-insulating (Bi,Sb)2Te3 thin films grown by molecular beam epitaxy (MBE). For thinner films, the supercurrent exhibits pronounced gate-tunable ambipolar behavior and is significantly suppressed as the chemical potential approaches the Dirac point, yet persists across it. In contrast, thicker films exhibit a much weaker ambipolar response. Moreover, we find that the supercurrent becomes significantly less resilient to external magnetic fields when the chemical potential is tuned near the Dirac point in both thickness regimes. Our numerical simulations demonstrate the ambipolar behavior of these TI JJ devices and attribute the asymmetric supercurrent observed in thicker TI films to the coexistence of Dirac surface states and bulk conduction channels. The demonstration of gate-tunable ambipolar Josephson transport in MBE-grown TI films paves the way for realizing Dirac-surface-state-mediated topological superconductivity and establishes a foundation for future exploration of electrically tunable Majorana modes.

cond-mat.mes-hall↗

arXiv2025

Orbital Hybridization-Induced Ising-Type Superconductivity in a Confined Gallium Layer

In low-dimensional superconductors, the interplay between quantum confinement and interfacial hybridization effects can reshape Cooper pair wavefunctions and induce novel forms of unconventional superconductivity. In this work, we employ a plasma-free, carbon buffer layer-assisted confinement epitaxy method to synthesize trilayer gallium (Ga) sandwiched between a graphene layer and a 6H-SiC(0001) substrate, forming an air-stable graphene/trilayer Ga/SiC heterostructure. In this confined light-element Ga layer, we demonstrate interfacial Ising-type superconductivity driven by atomic orbital hybridization between the Ga layer and the SiC substrate. Electrical transport measurements reveal that the in-plane upper critical magnetic field u0Hc2,|| reaches ~21.98T at T=400 mK, approximately 3.38 times the Pauli paramagnetic limit (~6.51T). Angle-resolved photoemission spectroscopy (ARPES) measurements combined with theoretical calculations confirm the presence of split Fermi surfaces with Ising-type spin textures at the K and K' valleys of the confined Ga layer strongly hybridized with SiC. Moreover, by incorporating finite relaxation time induced by impurity scattering into an Ising-type superconductivity model, we reproduce the entire temperature-dependent u0Hc2,|| phase diagram. This work establishes a new strategy to realize unconventional pairing wavefunctions by combining quantum confinement and interfacial hybridization effects in superconducting thin films. It also opens new avenues for designing scalable superconducting quantum electronic and spintronic devices through interfacial engineering.

cond-mat.mes-hall↗

arXiv2025

Interlayer Exchange Coupling-Induced Critical-Metal-to-Insulator Phase Transition in Quantum Anomalous Hall Insulators

Interlayer exchange coupling (IEC) between two magnetic layers sandwiched by a nonmagnetic spacer layer plays a critical role in shaping the magnetic properties of such heterostructures. The quantum anomalous Hall (QAH) effect has been realized in a structure composed of two magnetically doped topological insulator (TI) layers separated by an undoped TI layer. In this work, we employ molecular beam epitaxy to synthesize a series of magnetic TI sandwiches with varying thicknesses of the middle TI spacer layer. The well-quantized QAH effect is observed in all these samples, and the IEC modulates its critical behavior between the top and bottom magnetic TI layers. Near the plateau phase transition (PPT), thinner QAH samples exhibit a two-dimensional critical metal behavior with nearly temperature-independent longitudinal resistance. In contrast, thicker QAH samples behave as a three-dimensional insulator with reduced longitudinal resistance at higher temperatures. We employ a magnetic TI Hamiltonian with random magnetic domains to understand the IEC-induced critical-metal-to-insulator transition observed near QAH PPT.

cond-mat.mes-hall↗

arXiv2025

Interlayer Coupling-Induced Quantum Phase Transition in Quantum Anomalous Hall Multilayers

A quantum phase transition arises from competition between different ground states and is typically accessed by varying a single physical parameter near absolute zero temperature. The quantum anomalous Hall (QAH) effect with high Chern number C has recently been achieved in magnetic topological insulator (TI) multilayers. In this work, we employ molecular beam epitaxy to synthesize a series of magnetic TI penta-layers by varying the thickness of the middle magnetic TI layer, designated as m quintuple layers. Electrical transport measurements demonstrate a quantum phase transition between C = 1 and C = 2 QAH states. For m 1 and m 2, the sample exhibits the well-quantized C = 1 and C = 2 QAH states, respectively. For 1 m 2, we observe a monotonic decrease in Hall resistance from h/e2 to h/2e2 with increasing m, accompanied by a peak in the longitudinal resistance. The quantum phase transition between C = 1 and C = 2 QAH states is attributed to the weakening of the interlayer coupling between the top and the bottom C = 1 QAH layers. Our findings provide a scalable strategy for engineering QAH devices with a tunable Chern number. This approach enables precise control and enhanced functionality in chiral edge current-based electronic devices.

cond-mat.mes-hall↗

arXiv2025

Complex Magnetic Ordering in Candidate Topological Superconductors

The search for chiral topological superconductivity in magnetic topological insulator (TI)-FeTe heterostructures is a key frontier in condensed matter physics, with potential applications in topological quantum computing. The combination of ferromagnetism, superconductivity, and topologically nontrivial surface states brings together the key elements required for chiral Majorana physics. In this work, we examine the interplay between magnetism and superconductivity at the interfaces between FeTe and a series of TI overlayers. In superconducting MnBi$_2$Te$_4$/FeTe, any interfacial suppression of antiferromagnetism must affect at most a few nanometers. On the other hand, (Bi,Sb)$_2$Te$_3$/FeTe layers exhibit near-total suppression of antiferromagnetic ordering. Ferromagnetic Cr$_x$(Bi,Sb)$_{2-x}$Te$_3$ (CBST)/FeTe bilayers exhibit net magnetization in both CBST and FeTe layers, with evidence of interactions between superconductivity and ferromagnetism. These observations identify magnetic TI/FeTe interfaces as an exceptionally robust platform to realize chiral topological superconductivity.

cond-mat.supr-con↗