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Cynthia P. Quinteros

Publications and source records attributed to Cynthia P. Quinteros.

8 recordsLinked to original sources

Nanowire networks' interconnection graphs from their photomicrographs

Self-assemblies of tunable units are being intensively studied as physical systems with signal-processing capabilities. Specifically, silver nanowire networks (AgNWNs) have demonstrated accumulation, non-linearity, and memory retention with multiple timescales, features that enable a wide variety of neuromorphic implementations. In this study, we aim to extract the interconnection scheme to analyze the experimentally obtained network architecture and, eventually, use it as input to a previously developed simulation platform. By post-processing photomicrographs of AgNWN, we present a pipeline optimized to extract the interconnection diagram, recognizing the intersections formed among the nanowires, to determine the associated graph for each physical sample. A graph is a collection of nodes and edges whose properties can be associated with different electrical responses. It is thus possible to study graphs' metrics, such as the degree distribution, community size, clustering coefficient, and path-length, to compare the experimental assemblies' attributes to those of topological models of reference. Small-world, modular, and scale-free are well-known structures in the field of mathematical graphs. By analyzing the degree distribution, the adjacency matrices, among other useful representation means, the experimental assemblies reveal similarities to both small-world and modular topologies. All the mentioned analyses were conducted considering the interconnection scheme obtained from zenithal-view optical images, which overestimates the number of NWs' interconnections (due to the impossibility of distinguishing real junctions from spurious cross-points between vertically displaced NWs). For that reason, this communication also studies the impact of artificially removing junctions from the resulting graphs on the previously calculated clustering coefficient and path length.

cond-mat.dis-nn

Unconventional resistive switching in dense Ag-based nanowire networks with brain-inspired perspectives

We report an unconventional resistive switching effect on high-density self-assembled Ag-nanowire networks tailored by a fuse-like operation. We propose a mechanism to rationalize the observed phenomenology by analyzing the electrical signatures before and after such a fusing. The explanation allows reconciling the results obtained in similar systems early adopted as transparent electrodes and the more recent attempts to use this type of substrate for in-materia computational operations. In addition to the usual analog nature of the available resistance states and the ability to tune internal weights, we show that these networks' sparsity and non-linear behavior are also attributes. Thus, the formerly exhibited nanowires' abilities to code synaptic behavior are complemented by neuronal features upon properly tuning the network density and the applied electrical protocol.

cond-mat.mtrl-sci

Evolution of ferromagnetic stripes in FePt films at low temperature

Patterns of ferroic domains and domain walls are being intensively studied to implement new logic schemes. Any technological application of such objects depends on a detailed understanding of them. This study analyzes patterns of ferromagnetic stripes on equiatomic FePt thin films at low temperatures. Since FePt is known to develop a transition from in-plane homogeneous magnetization to stripes upon varying its thickness, multiple samples are studied to consider the critical value within the analyzed range. Stripes' width demonstrates the well-known Murayama's law while a non-trivial dependence on temperature is also reported. Moreover, the room-temperature uniform distribution of the pattern evolves into a distorted one upon temperature cycling. Finally, dissimilar striped patterns are obtained upon reducing and increasing temperature indicating the states are dependent on the history of applied stimuli rather than the parametric conditions.

cond-mat.mtrl-sci

Ferroelastic domain walls in BiFeO$_3$ as memristive networks

Electronic conduction along individual domain walls (DWs) has been reported in BiFeO$_3$ (BFO) and other nominally insulating ferroelectrics. DWs in these materials separate regions of differently oriented electrical polarization (domains) and are just a few atoms wide, providing self-assembled nanometric conduction paths. In this work, it is shown that electronic transport is possible also from wall to wall through the dense network of as-grown DWs in BFO thin films. Electric field cycling at different points of the network, performed locally by conducting atomic force microscope (cAFM), induces resistive switching selectively at the DWs, both for vertical (single wall) and lateral (wall-to-wall) conduction. These findings are the first step towards investigating DWs as memristive networks for information processing and in-materio computing.

cond-mat.mtrl-sci

Spatio-temporal evolution of resistance state in simulated memristive networks

Originally studied for their suitability to store information compactly, memristive networks are now being analysed as implementations of neuromorphic circuits. An extremely high number of elements is thus mandatory. To surpass the limited achievable connectivity - due to the featuring size - exploiting self-assemblies has been proposed as an alternative, in turn posing more challenges. In an attempt for offering insight on what to expect when characterizing the collective electrical response of switching assemblies, in this work, networks of memristive elements are simulated. Collective electrical behaviour and maps of resistance states are characterized upon different electrical stimuli. By comparing the response of homogeneous and heterogeneous networks, we delineate differences that might be experimentally observed when the number of memristive units is scaled up and disorder arises as an inevitable feature.

cs.ET

Field-dependent roughness of moving domain walls in a Pt/Co/Pt magnetic thin film

The creep motion of domain walls driven by external fields in magnetic thin films is described by universal features related to the underlying depinning transition. One key parameter in this description is the roughness exponent characterizing the growth of fluctuations of the domain wall position with its longitudinal length scale. The roughness amplitude, which gives information about the scale of fluctuations, however, has received less attention. Albeit their relevance, experimental reports of the roughness parameters, both exponent and amplitude, are scarce. We report here experimental values of the roughness parameters for different magnetic field intensities in the creep regime at room temperature for a Pt/Co/Pt thin film. The mean value of the roughness exponent is $ζ= 0.74$, and we show that it can be rationalized as an effective value in terms of the known universal values corresponding to the depinning and thermal cases. In addition, it is shown that the roughness amplitude presents a significant increase with decreasing field. These results contribute to the description of domain wall motion in disordered thin magnetic systems.

cond-mat.dis-nn

Plausible physical mechanisms for unusual volatile/non-volatile resistive switching in HfO2-based stacks

Memristive devices made of silicon compatible simple oxides are of great interest for storage and logic devices in future adaptable electronics and non-digital computing applications. A series of highly desirable properties observed in an atomic-layer-deposited hafnia-based stack, triggered our interest to investigate their suitability for technological implementations. In this paper, we report our attempts to reproduce the observed behaviour within the framework of a proposed underlying mechanism. The inability of achieving the electrical response of the original batch indicates that a key aspect in those devices has remained undetected. By comparing newly made devices with the original ones, we gather some clues on the plausible alternative mechanisms that could give rise to comparable electrical behaviours.

cond-mat.mtrl-sci

Magneto-ionic control of spin polarization in magnetic tunnel junctions

Magnetic tunnel junctions (MTJs) with Hf0.5Zr0.5O2 barriers are reported to show both tunneling magnetoresistance effect (TMR) and tunneling electroresistance effect (TER), displaying four resistance states by magnetic and electric field switching. Here we show that, under electric field cycling of large enough magnitude, the TER can reach values as large as 10^6%. Moreover, concomitant with this TER enhancement, the devices develop electrical control of spin polarization, with sign reversal of the TMR effect. Currently, this intermediate state exists for a limited number of cycles and understanding the origin of these phenomena is key to improve its stability. The experiments presented here point to the magneto-ionic effect as the origin of the large TER and strong magneto-electric coupling, showing that ferroelectric polarization switching of the tunnel barrier is not the main contribution.

cond-mat.mtrl-sci