Cyprian Sobczak | Searcharxiv

arXiv2026

Role of quasi-Fermi levels in Si- and Mg-related optical absorption in nitride laser diodes (LDs): material context

Optical absorption and reabsorption of light emitted from active regions in nitride laser diodes (LDs) have been shown to reduce the light extraction efficiency of these devices. It was proven that the presence of Si and Mg may considerably increase the optical absorption. This effect is much stronger in the high-energy (short-wavelength) range of the spectrum. The absorption increase is directly related to the ionization of the Si donor and Mg acceptor levels, which are controlled by the electron and hole quasi-Fermi levels. It is shown that the absorption may be increased because of the higher ionization of Mg caused by the compensation in the p-type region and the high ionization of Si in the n-type region. It was explained theoretically why optical efficiency is increased by removal of doping in waveguides. It was also shown that good material quality leads to a low absorption level, especially in the Mg-doped p-type part of the device.

cond-mat.mtrl-sci↗

arXiv2025

Quantum effects in surface diffusion: application to diffusion of nitrogen adatoms over GaN(0001) surface

It is shown that quantum effects play determining role in nitrogen adatom diffusion due to several different factors. This could be related to the change of the energy of the quantum states and also due to the redistribution of electrons between the quantum states, both full and resonant, via quantum statistics partially governed by the Fermi energy level. These effects were studied in the case of nitrogen diffusion over clean and gallium covered Ga-terminated GaN(0001) surface. For the fractional coverage the density functional theory (DFT) calculations show that at the saddle point configuration the redistribution of electrons between different quantum states may affect the surface diffusion barrier significantly. The other quantum influence occurs via the change of the minimal energy configuration. Under fractional Ga coverage of GaN(0001) surface the nitrogen diffusion energy barrier proceeds from the resonant states governed energy minimal H3 site across the saddle point in the bridge configuration. At this path the barrier is affected the electron redistribution between surface quantum states both in the initial and the saddle point. In the case of the full GaN coverage the diffusion path is from on-top N adatom configuration via H3 site that corresponds to maximal energy. Therefore the diffusion barrier is Ebar= 1.18 eV for clean and Ebar= 0.92 eV for (1/6) ML to finally Ebar= 1.23 eV for full Ga coverage. Thus the overall barrier is reduced to Ebar= 0.92 eV due to quantum statistics effects. The identified stable N on-top configuration for the full coverage is essential for atomic mechanism of GaN growth in Ga-rich regime.

cond-mat.mtrl-sci↗