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D. -M. Mei

Publications and source records attributed to D. -M. Mei.

At least 19 recordsLinked to original sources

Comparative assessment of germanium-based spin-qubit modalities: donor, acceptor, gate-defined hole, and gate-defined electron platforms

High-purity germanium (Ge) has re-emerged as a versatile semiconductor platform for spin-based quantum information processing because it combines mature materials processing, access to spin-free isotopes, high mobilities, small effective masses, and strong but engineerable spin--orbit coupling. However, ``Ge qubits'' are not a single technology. Donor spin qubits, acceptor spin qubits, gate-defined hole spin qubits, and gate-defined electron spin qubits exploit different parts of the Ge band structure and therefore make distinct trade-offs among coherence, controllability, fabrication complexity, and scalability. Here we compare these four Ge-based spin-qubit modalities on a common physical and architectural footing. We review the shared Ge materials physics, including isotopic purification, the multivalley \(L\)-point conduction band, the spin-\(3/2\) valence band, heavy-hole/light-hole mixing, strain, interfaces, disorder, and phonons. We also introduce a common framework for estimating phononic-crystal-modified \(T_1\) using a calibrated reference relaxation rate, a geometry-dependent strain-density-of-states suppression factor, and parasitic relaxation channels. The comparison shows that gate-defined Ge hole-spin qubits currently offer the strongest combination of all-electrical control, demonstrated multiqubit operation, and scalability. Donor, acceptor, and gate-defined electron qubits remain important complementary directions for memory, hybrid, and exploratory architectures. Overall, Ge supports a diverse qubit ecosystem, with gate-defined hole-spin qubits presently providing the clearest path toward scalable Ge-based quantum processors.

quant-ph

Detector-Grade Germanium as a Low-Disorder Host for Indium-Acceptor Spin Qubits: A Five-Qubit Materials-to-Architecture Design Study

Acceptor-bound hole spins in germanium (Ge) offer a promising but underexplored route to semiconductor quantum information processing. We present a theory-guided design study of a detector-grade Ge acceptor-spin platform based on intentionally incorporated indium (In) acceptors in ultra-high-purity Ge. The proposed materials strategy combines a residual impurity background near $10^{10} \mathrm{cm^{-3}}$ with a target In density of approximately $2\times10^{14} \mathrm{cm^{-3}}$, corresponding to an acceptor spacing of about 170 nanometer. A 1 $μ$m-long active channel with a suitable transverse mode volume can contain about five acceptors on average, enabling a statistically selected post-fabrication register rather than a deterministically placed chain. We analyze the physical basis, device architecture, strain and disorder limits, coupling hierarchy, modeling workflow, fabrication pathway, and scaling prospects. Our results indicate that detector-grade Ge can suppress uncontrolled bulk electrostatic and strain disorder to levels compatible with acceptor-hole qubits, while the spin--orbit-active valence-band manifold supports all-electrical control and dipolar or phonon-mediated coupling. Direct exchange is treated as a close-pair or gate-enhanced interaction rather than the generic mean-spacing coupling. Phononic crystal engineering is identified as a second-stage enhancement for suppressing unwanted acoustic modes and enabling selected cavity-mediated interactions after baseline control, readout, and nearest-neighbor coupling are validated. Remaining challenges include statistical acceptor placement, interface disorder, charge noise, readout integration, and experimental validation. This work identifies detector-grade Ge In-acceptor qubits as a credible intermediate architecture between donor-based impurity qubits and fully gate-defined Ge hole-spin hardware.

quant-ph

AIMBio-Mat: An AI-Native FAIR Platform for Closed-Loop Materials Discovery and Biomedical Translation

Materials discovery and biomedical translation increasingly require models that can reason across composition, processing, structure, biological response, manufacturability, safety, and governance constraints. Existing materials and biomedical data ecosystems are powerful but remain poorly coupled for AI-guided discovery. Here we present AIMBio, a conceptual framework for an AI-native, FAIR, and governance-aware decision layer that links materials provenance, biomedical context, knowledge graphs, uncertainty-aware machine learning, and human-in-the-loop active learning. The framework formulates biomedical-materials discovery as constrained multi-objective optimization under uncertainty and introduces practical requirements for metadata, model documentation, risk-tiered governance, evaluation metrics, and phased implementation. To make the roadmap testable, we add a minimum viable prototype specification and a worked pilot for AI-guided nanomaterials for drug delivery. AIMBio is positioned as exploratory and preclinical discovery infrastructure, not as clinical decision-support software; any clinical or regulated-device use would require separate validation, change control, and regulatory review. The central contribution is a publishable platform blueprint for converting fragmented materials and biomedical records into auditable, experimentally actionable, and translationally responsible discovery workflows.

physics.app-ph

Building a Regional Data-Centric Materials Science Ecosystem for Processing-Rich Materials Innovation in the Great Plains

Data-centric materials science is changing how materials are discovered, optimized, manufactured, and qualified, yet many deployment-limiting materials problems still depend on experimental, processing-rich, device-level, and field-relevant data that are difficult to capture in conventional materials databases. This perspective argues that the Great Plains and adjacent interior research corridor can make a distinctive national contribution by organizing distributed experimental assets into a trusted regional materials-data ecosystem. The proposed model emphasizes FAIR metadata, provenance, persistent sample identifiers, uncertainty-aware modeling, semi-closed-loop workflows, stackable workforce training, and tiered governance for academic, public, controlled-access, and industry-protected data. We identify five coupled barriers -- fragmented data, weak algorithm--laboratory translation, uneven access to cyberinfrastructure and technical staff, workforce gaps at the materials--data interface, and insufficient incentives for sharing and reuse -- and propose a staged roadmap for addressing them. A high-purity germanium pilot illustrates how regional strengths can be converted into reusable datasets, benchmark models, trained personnel, and decision-improving workflows. The broader message is that regional leadership in data-centric materials science will depend less on geographic concentration than on trustworthy data practices, interoperable infrastructure, cross-trained people, and application-driven materials challenges.

cond-mat.mtrl-sci

Two-Qubit Module Based on Phonon-Coupled Ge Hole-Spin Qubits: Design, Fabrication, and Readout at 1-4 K

We present a device-level design study for a two-qubit module based on phonon-coupled germanium (Ge) hole-spin qubits targeted for operation at $1$--$4~\mathrm{K}$. Building on prior theoretical modeling of phonon-engineered Ge qubits and phononic-crystal (PnC) cavities, we translate those modeling results into a fabrication-oriented two-qubit layout that integrates two gate-defined hole-spin qubits in a strained Ge quantum well with a GHz PnC defect mode intended to mediate a coherent phonon-based interaction. We specify the SiGe/Ge heterostructure, electrostatic gate layout, PnC cavity geometry, and a compatible nanofabrication pathway, including gate-stack formation, membrane patterning and release, RF/DC wiring, and process-risk mitigation. We further develop a readout architecture combining spin-to-charge conversion with RF reflectometry on a proximal charge sensor, and we provide a link-budget estimate that states the assumed system noise temperature, RF signal contrast, and integration-time requirements for single-shot readout at elevated cryogenic temperatures. Finally, we outline a stepwise benchmarking program for charge stability, single-qubit control, phonon-bandgap modification of relaxation, and resolvable phonon-mediated two-qubit coupling. The manuscript does not report experimental device data; rather, it provides an experimentally actionable bridge from prior modeling to future fabrication and measurement of phonon-coupled Ge hole-spin modules.

cond-mat.mes-hall

Evaluating the Effective Segregation Coefficient in High-Purity Germanium (HPGe) Crystals for Ge Detector Development in Rare-Event Searches

The performance and scalability of rare-event physics experiments depend on large-volume, detector-grade high-purity germanium (HPGe) crystals with precise control of impurity segregation during growth. We report a detailed study of impurity distribution in a single Czochralski-grown HPGe crystal produced at University of South Dakota (USD). The crystal was sectioned longitudinally into 37 segments, enabling the first high-resolution and systematic mapping of dopant profiles along the length of a detector-grade HPGe boule. Hall-effect measurements were used to extract impurity concentrations for boron (B), aluminum (Al), gallium (Ga), and phosphorus (P) in each segment. From these data, we determine effective segregation coefficients ($K_{eff}$) and initial melt concentrations ($C_0$) for the dominant dopants and compare them with classical Burton-Prim-Slichter expectations. The results provide quantitative insight into impurity transport and melt-solid partitioning under realistic detector growth conditions. These findings inform process-optimization strategies for HPGe crystal pulling, improve impurity control along the boule, and support the reliable fabrication of large, low-background HPGe detectors for next-generation rare-event searches.

physics.ins-det

Probing low-mass dark matter from sub-MeV to sub-GeV with germanium-based quantum phononic spectroscopy

We present a germanium phonon-to-charge transducer that integrates a slow-phonon phononic-crystal (PnC) region with radio-frequency quantum point-contact (RF-QPC) readout at 4 K, and we evaluate its dark-sector reach. A calibrated signal-collection model, which combines geometric guiding, propagation survival, and multiplicity-assisted primary-phonon detection, provides selection-corrected thresholds in the $10^{-3}$-$10^{-2}$~eV range and a background model informed by nanosecond timing gates and GHz-band power-spectral-density windows. Under standard halo assumptions, a 100 g module achieves projected sensitivity to DM-electron and DM-nucleon scattering at recoil energies below $10^{-2}$~eV, probing cross sections below $10^{-43}\,\mathrm{cm}^{2}$ for $m_χ\in [0.01,100]~\mathrm{MeV}/c^{2}$ (with efficiencies and thresholds folded in). We present sensitivities for both heavy-mediator ($F_{\rm DM}=1$) and light-mediator ($F_{\rm DM}\propto 1/q^{2}$) benchmarks, quantify dominant systematics (threshold, phonon quality factor $Q$, and bulk defect densities), and outline a staged program toward kg$\cdot$yr exposures that begins to test models approaching the solar CE$ν$NS background.

hep-ph

Phonon-Coupled Hole-Spin Qubits in High-Purity Germanium: Design and Modeling of a Scalable Architecture

We present a design and modeling of a scalable quantum processor architecture utilizing hole-spin qubits defined in gate-controlled germanium (Ge) quantum dots, where coherent spin-phonon coupling is predicted to facilitate qubit manipulation and long-range interactions. The architecture exploits the strong, electrically tunable spin-orbit interactions intrinsic to hole states in Ge, integrated with high-quality phononic crystal cavities (PnCCs) to enable fully electrical qubit control and phonon-mediated coupling. Employing a streamlined simulation framework built upon multiband \(\mathbf{k}\cdot\mathbf{p}\) modeling and finite-element methods, we quantify key performance metrics, including electrically tunable \( g \)-factors ranging from \(1.3\) to \(2.0\), spin-phonon coupling strengths up to \(6.3\,\mathrm{MHz}\), phononic cavity quality factors exceeding \(10^4\), and phonon-mediated spin relaxation times (\(T_1\)) reaching milliseconds. The proposed architecture concurrently achieves extended spin coherence and rapid gate operations through strategic electric field modulation and engineered phononic bandgap environments. Furthermore, isotopically enriched high-purity Ge crystals grown in-house at the University of South Dakota, significantly enhance device coherence by minimizing disorder and hyperfine interactions. This integrated approach, merging advanced materials engineering, precise spin-orbit coupling, and phononic cavity design, establishes a promising CMOS-compatible pathway toward scalable, high-fidelity quantum computing.

quant-ph

Ge-based Quantum Sensors for Low-Energy Physics

We present \textbf{GeQuLEP} (Germanium-based Quantum Sensors for Low-Energy Physics), a conceptual design for an advanced quantum sensing platform integrating high-purity germanium (Ge) crystals with engineered phononic crystal cavities. At cryogenic temperatures, these cavities naturally host dipole-bound states, effectively forming quantum dots coupled to radio-frequency quantum point contact (RF-QPC) readout systems. This innovative coupling approach promises ultra-sensitive phonon-mediated charge detection through phonon-induced charge displacement. GeQuLEP is specifically designed to achieve exceptionally low detection thresholds, theoretically enabling single primary phonon sensitivity with anticipated energy depositions as low as \textbf{0.00745~eV}. This unprecedented sensitivity, if realized experimentally, would provide unique access to searches for low-mass dark matter down to the keV/$c^2$ mass range via nuclear and electronic recoils. Additionally, GeQuLEP aims to facilitate the real-time detection of solar \textit{pp} neutrinos through coherent elastic neutrino--nucleus scattering (CE$ν$NS). By combining phonon-based quantum transduction with quantum-classical hybrid readout schemes, the GeQuLEP architecture represents a scalable, contact-free phonon spectroscopy design that could significantly advance the capabilities of ultra-low-energy rare-event detection at the quantum limit.

astro-ph.IM

Nuclear Recoil Calibration at Sub-keV Energies in LUX and Its Impact on Dark Matter Search Sensitivity

Dual-phase xenon time projection chamber (TPC) detectors offer heightened sensitivities for dark matter detection across a spectrum of particle masses. To broaden their capability to low-mass dark matter interactions, we investigated the light and charge responses of liquid xenon (LXe) to sub-keV nuclear recoils. Using neutron events from a pulsed Adelphi Deuterium-Deuterium neutron generator, an in situ calibration was conducted on the LUX detector. We demonstrate direct measurements of light and charge yields down to 0.45 keV and 0.27 keV, respectively, both approaching single quanta production, the physical limit of LXe detectors. These results hold significant implications for the future of dual-phase xenon TPCs in detecting low-mass dark matter via nuclear recoils.

physics.ins-det

Exploring Charge Transport Dynamics in a Cryogenic P-Type Germanium Detector

This study explores the dynamics of charge transport within a cryogenic P-type Ge particle detector, fabricated from a crystal cultivated at the University of South Dakota (USD). By subjecting the detector to cryogenic temperatures and an Am-241 source, we observe evolving charge dynamics and the emergence of cluster dipole states, leading to the impact ionization process at 40 mK. Our analysis focuses on crucial parameters: the zero-field cross-section of cluster dipole states and the binding energy of these states. For the Ge detector in our investigation, the zero-field cross-section of cluster dipole states is determined to be $8.45 \times 10^{-11}\pm 4.22\times 10^{-12}~cm^2$. Examination of the binding energy associated with cluster dipole states, formed by charge trapping onto dipole states during the freeze-out process, reveals a value of $0.034 \pm 0.0017$ meV. These findings shed light on the intricate charge states influenced by the interplay of temperature and electric field, with potential implications for the sensitivity in detecting low-mass dark matter.

physics.ins-det

Observation of Time-Dependent Internal Charge Amplification in a Planar Germanium Detector at Cryogenic Temperature

For the first time, time-dependent internal charge amplification through impact ionization has been observed in a planar germanium (Ge) detector operated at cryogenic temperature. In a time period of 30 and 45 minutes after applying a bias voltage, the charge energy corresponding to a baseline of the 59.54 keV $γ$ rays from a $^{241}$Am source is amplified for a short period of time and then decreases back to the baseline. The amplification of charge energy depends strongly on the applied positive bias voltage with drifting holes across the detector. No such phenomenon is visible with drifting electrons across the detector. We find that the observed charge amplification is dictated by the impact ionization of charged states, which has a strong correlation with impurity level and applied electric field. We analyze the dominant physics mechanisms that are responsible for the creation and the impact ionization of charged states. Our analysis suggests that the appropriate level of impurity in a Ge detector can enhance charge yield through the impact ionization of charged states to achieve extremely low-energy detection threshold ($<$ 10 meV) for MeV-scale dark matter searches if the charge amplification can be stabilized.

physics.ins-det

Fast and Flexible Analysis of Direct Dark Matter Search Data with Machine Learning

We present the results from combining machine learning with the profile likelihood fit procedure, using data from the Large Underground Xenon (LUX) dark matter experiment. This approach demonstrates reduction in computation time by a factor of 30 when compared with the previous approach, without loss of performance on real data. We establish its flexibility to capture non-linear correlations between variables (such as smearing in light and charge signals due to position variation) by achieving equal performance using pulse areas with and without position-corrections applied. Its efficiency and scalability furthermore enables searching for dark matter using additional variables without significant computational burden. We demonstrate this by including a light signal pulse shape variable alongside more traditional inputs such as light and charge signal strengths. This technique can be exploited by future dark matter experiments to make use of additional information, reduce computational resources needed for signal searches and simulations, and make inclusion of physical nuisance parameters in fits tractable.

astro-ph.CO

Evidence of cluster dipole states in germanium detectors operating at temperatures below 10 K

By studying charge trapping in germanium (Ge) detectors operating at temperatures below 10 K, we demonstrate for the first time that the formation of cluster dipole states from residual impurities is responsible for charge trapping. Two planar detectors with different impurity levels and types are used in this study. When drifting the localized charge carriers created by $α$ particles from the top surface across a detector under a lower bias voltage, significant charge trapping is observed when compared to operating at a higher bias voltage. The amount of charge trapping shows a strong dependence on the type of charge carriers. Electrons are trapped more than holes in a p-type detector while holes are trapped more than electrons in a n-type detector. When both electrons and holes are drifted simultaneously using the widespread charge carriers created by $γ$ rays inside the detector, the amount of charge trapping shows no dependence on the polarity of bias voltage.

physics.ins-det

Development of Planar P-type Point Contact Germanium Detectors for Low-Mass Dark Matter Searches

The detection of low-energy deposition in the range of sub-eV through ionization using germanium (Ge) with a bandgap of $\sim$0.7 eV requires internal amplification of charge signal. This can be achieved through high electric field which accelerates charge carriers to generate more charge carriers. The minimum electric field required to generate internal charge amplification is derived for different temperatures. A point contact Ge detector provides extremely high electric field in proximity to the point contact. We show the development of a planar point contact detector and its performance. The field distribution is calculated for this planar point contact detector. We demonstrate the required electric field can be achieved with a point contact detector.

physics.ins-det

Constraints on Effective Field Theory Couplings Using 311.2 days of LUX Data

We report here the results of an Effective Field Theory (EFT) WIMP search analysis using LUX data. We build upon previous LUX analyses by extending the search window to include nuclear recoil energies up to $\sim$180 keV$_{nr}$, requiring a reassessment of data quality cuts and background models. In order to use a binned Profile Likelihood statistical framework, the development of new analysis techniques to account for higher-energy backgrounds was required. With a 3.14$\times10^4$ kg$\cdot$day exposure using data collected between 2014 and 2016, we set 90\% C.L. exclusion limits on non-relativistic EFT WIMP couplings to neutrons and protons, providing the most stringent constraints on a significant fraction of the possible EFT WIMP interactions. Additionally, we report world-leading exclusion limits on inelastic EFT WIMP-nucleon recoils.

astro-ph.CO

Low-Energy Solar Neutrino Detection Utilizing Advanced Germanium Detectors

We explore the possibility to use advanced germanium (Ge) detectors as a low-energy solar neutrino observatory by means of neutrino-nucleus elastic scattering. A Ge detector utilizing internal charge amplification for the charge carriers created by the ionization of impurities is a novel technology with experimental sensitivity for detecting low-energy solar neutrinos. Ge internal charge amplification (GeICA) will amplify the charge carriers induced by neutrino interacting with Ge atoms through emission of phonons. It is those phonons that will create charge carriers through the ionization of impurities to achieve an extremely low energy threshold of $\sim$0.01 eV. We demonstrate the phonon absorption, excitation, and ionization probability of impurities in a Ge detector with impurity levels of 3$\times$10$^{10}$ cm$^{-3}$, 9$\times$10$^{10}$ cm$^{-3}$, and 2$\times$10$^{11}$ cm$^{-3}$. We present the sensitivity of such a Ge experiment for detecting solar neutrinos in the low-energy region. We show that, if GeICA technology becomes available, then a new opportunity arises to observe $pp$ and 7Be solar neutrinos. Such a novel detector with only 1 kg of high-purity Ge will give $\sim$ 10 events per year for $pp$ neutrinos and $\sim$ 5 events per year for 7Be neutrinos with a detection energy threshold of 0.01 eV.

physics.ins-det

Implication of the Temperature-Dependent Charge Barrier Height of Amorphous Germanium Contact Detector in Searching for Rare Event Physics

The exploration of germanium (Ge) detectors with amorphous Ge (a-Ge) contacts has drawn attention to the searches for rare-event physics such as dark matter and neutrinoless double-beta decay. The charge barrier height (CBH) of the a-Ge contacts deposited on the detector surface is crucial to suppress the leakage current of the detector in order to achieve la ow-energy detection threshold and high-energy resolution. The temperature-dependent CBH of a-Ge contacts for three Ge detectors is analyzed to study the bulk leakage current (BLC) characteristics. The detectors were fabricated at the University of South Dakota using homegrown crystals. The CBH is determined from the BLC when the detectors are operated in the reverse bias mode with a guard-ring structure, which separates the BLC from the surface leakage current (SLC). The results show that CBH is temperature dependent. The direct relation of the CBH variation to temperature is related to the barrier inhomogeneities created on the interface of a-Ge and crystalline Ge. The inhomogeneities that occur at the interface were analyzed using the Gaussian distribution model for three detectors. The CBH of a-Ge contact is projected to zero temperature. The implication of the CBH at zero temperature is discussed for Ge detectors with a-Ge contacts in searching for rare-event physics.

physics.ins-det