Large-area CVD Graphene for Photogating-Based Photodetection
Our work explores large-area CVD graphene as a scalable platform for photodetectors. We show that substrate-induced photogating in graphene/SiO$_2$/Si structures enables a photoconductivity signal in mono-, bi-, and trilayer CVD graphene. The devices respond to illumination with photon energies above the Si band gap and do not respond to telecom frequency, suggesting the photoconductivity mechanism through the photogating. Large sample area and gate voltage-dependent resistivity measurements allow us to prove the dominant role of the photogating directly, demonstrating similarity of the capacitive recharging current and the photoresponse. The sensitivity is the highest (995 A/W) for the monolayer graphene. Increasing the number of graphene layers reduces the sensitivity due to screening and parallel conduction, but can improve detectivity by lowering the noise level. The sensitivity of CVD graphene device depends on fabrication route of photolitography: device with metal contacts fabricated before graphene transfer show higher photoresponce. Thus, our work demonstrate the potential of industrially relevant CVD graphene for sensitive photogating-based photodetectors.