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D. A. Ritchie

Publications and source records attributed to D. A. Ritchie.

At least 235 records · Page 13Linked to original sources

Electron Correlations in an Electron Bilayer at Finite Temperature: Landau Damping of the Acoustic Plasmon

We report angle-resolved Raman scattering observations of the temperature dependent Landau damping of the acoustic plasmon in an electron bilayer system realised in a GaAs double quantum well structure. Corresponding calculations of the charge-density excitation spectrum of the electron bilayer using forms of the random phase approximation (RPA), and the static local field formalism of Singwi, Tosi, Land and Sjölander (STLS) extended to incorporate non-zero electron temperature $T_{\rm e}$ and phenomenological damping, are also presented. The STLS calculations include details of the temperature dependence of the intra- and inter-layer local field factors and pair-correlation functions. Good agreement between experiment and the various theories is obtained for the acoustic plasmon energy and damping for $T_{\rm e} \lesssim T_{\rm F}/2$, the Fermi temperature. However, contrary to current expectations, all of the calculations show significant departures from our experimental data for $T_{\rm e} \gtrsim T_{\rm F}/2$. From this, we go on to demonstrate unambiguously that real local field factors fail to provide a physically accurate description of exchange correlation behaviour in low dimensional electron gases. Our results suggest instead that one must resort to a {\em{dynamical}} local field theory, characterised by a {\em{complex}} field factor to provide a more accurate description.

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Detection of Coulomb Charging around an Antidot

We have detected oscillations of the charge around a potential hill (antidot) in a two-dimensional electron gas as a function of a perpendicular magnetic field B. The field confines electrons around the antidot in closed orbits, the areas of which are quantised through the Aharonov-Bohm effect. Increasing B reduces each state's area, pushing electrons closer to the centre, until enough charge builds up for an electron to tunnel out. This is a new form of the Coulomb blockade seen in electrostatically confined dots. We have also studied h/2e oscillations and found evidence for coupling of opposite spin states of the lowest Landau level.

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Detection of Coulomb Charging around an Antidot in the Quantum Hall Regime

We have detected oscillations of the charge around a potential hill (antidot) in a two-dimensional electron gas as a function of a large magnetic field B. The field confines electrons around the antidot in closed orbits, the areas of which are quantised through the Aharonov-Bohm effect. Increasing B reduces each state's area, pushing electrons closer to the centre, until enough charge builds up for an electron to tunnel out. This is a new form of the Coulomb blockade seen in electrostatically confined dots. Addition and excitation spectra in DC bias confirm the Coulomb blockade of tunnelling.

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Spin-dependent transport in a clean one-dimensional channel

A shoulder-like feature close to $(0.7\times 2e^{2}/h)$, "the 0.7 structure" at zero magnetic field was observed in clean one-dimensional (1D) channels [K.J. Thomas et al., Phys. Rev. Lett. 77, 135 (1996)]. To provide further understanding of this structure, we have performed low-temperature measurements of a novel design of 1D channel with overlaying finger gates to study the 0.7 structure as a function of lateral confinement strength and potential profile. We found that the structure persists when the lateral confinement strength is changed by a factor of 2. We have also shown that the 0.7 structure present in two 1D channels in series behaves like a single 1D channel which shows the 0.7 structure, demonstrating that the 0.7 structure is not a transmission effect through a ballistic channel at zero in-plane magnetic field.

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An observation of spin-valve effects in a semiconductor field effect transistor: a novel spintronic device

We present the first spintronic semiconductor field effect transistor. The injector and collector contacts of this device were made from magnetic permalloy thin films with different coercive fields so that they could be magnetized either parallel or antiparallel to each other in different applied magnetic fields. The conducting medium was a two dimensional electron gas (2DEG) formed in an AlSb/InAs quantum well. Data from this device suggest that its resistance is controlled by two different types of spin-valve effect: the first occurring at the ferromagnet-2DEG interfaces; and the second occuring in direct propagation between contacts.

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Experimental Evidence for Coulomb Charging Effects in an Open Quantum Dot at Zero Magnetic Field

We have measured the low-temperature transport properties of an open quantum dot formed in a clean one-dimensional channel. For the first time, at zero magnetic field, continuous and periodic oscillations superimposed upon ballistic conductance steps are observed when the conductance through the dot $G$ exceeds $2e^2/h$. We ascribe the observed conductance oscillations to evidence for Coulomb charging effects in an open dot. This is supported by the evolution of the oscillating features for $G>2e^2/h$ as a function of both temperature and barrier transparency. Our results strongly suggest that at zero magnetic field, current theoretical and experimental understanding of Coulomb charging effects overlooks charging in the presence of fully transmitted 1D channels.

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Re-entrant insulator-metal-insulator transition at B=0 in a two dimensional hole gas

We report the observation of a re-entrant insulator--metal--insulator transition at B=0 in a two dimensional (2D) hole gas in GaAs at temperatures down to 30mK. At the lowest carrier densities the holes are strongly localised. As the carrier density is increased a metallic phase forms, with a clear transition at σ= ~5e^2/h. Further increasing the density weakens the metallic behaviour, and eventually leads to the formation of a second insulating state for σ> ~50e^2/h. In the limit of high carrier densities, where k_F.l is large and r_s is small, we thus recover the results of previous work on weakly interacting systems showing the absence of a metallic state in 2D.

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Interaction Effects in a One-Dimensional Constriction

We have investigated the transport properties of one-dimensional (1D) constrictions defined by split-gates in high quality GaAs/AlGaAs heterostructures. In addition to the usual quantized conductance plateaus, the equilibrium conductance shows a structure close to $0.7(2e^2/h)$, and in consolidating our previous work [K.~J. Thomas et al., Phys. Rev. Lett. 77, 135 (1996)] this 0.7 structure has been investigated in a wide range of samples as a function of temperature, carrier density, in-plane magnetic field $B_{\parallel}$ and source-drain voltage $V_{sd}$. We show that the 0.7 structure is not due to transmission or resonance effects, nor does it arise from the asymmetry of the heterojunction in the growth direction. All the 1D subbands show Zeeman splitting at high $B_{\parallel}$, and in the wide channel limit the $g$-factor is $\mid g \mid \approx 0.4$, close to that of bulk GaAs. As the channel is progressively narrowed we measure an exchange-enhanced $g$-factor. The measurements establish that the 0.7 structure is related to spin, and that electron-electron interactions become important for the last few conducting 1D subbands.

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Current flow past an etched barrier: field emission from a two-dimensional electron gas

We find that, under appropriate conditions, electrons can pass a barrier etched across a two dimensional electron gas (2DEG) by field emission from the GaAs/AlGaAs heterojunction into a second, low-density 2DEG formed deep in the substrate. The current-voltage characteristics exhibit a rapid increase in the current at the field emission threshold and intrinsic bistability above this threshold, consistent with a heating instability occurring in the second 2DEG. These results may explain similar behaviour recently seen in a number of front-gated devices by several groups.

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Resonant Tunneling Spectroscopy of Interacting Localised States -- Observation of the Correlated Current Through Two Impurities

We study effects of Coulomb interactions between localised states in a potential barrier by measuring resonant-tunneling spectra with a small bias applied along the barrier. In the ohmic regime the conductance of 0.2um--gate lateral GaAs microstructures shows distinct peaks associated with individual localised states. However, when an electric field is applied new states start contributing to the current, which becomes a correlated electron flow through two interacting localised states. Several situations of such correlations have been observed, and the conclusions are confirmed by calculations.

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Metal-insulator transition at B=0 in an ultra-low density ($r_{s}=23$) two dimensional GaAs/AlGaAs hole gas

We have observed a metal-insulator transition in an ultra-low density two dimensional hole gas formed in a high quality GaAs-AlGaAs heterostructure at B=0. At the highest carrier density studied ($p_{s}=2.2x10^{10} cm^{-2}, r_{s}=16$) the hole gas is strongly metallic, with an exceptional mobility of $425,000 cm^{2}V^{-1}s^{-1}$. The low disorder and strength of the many-body interactions in this sample are highlighted by the observation of re-entrant metal insulator transitions in both the fractional ($ν< 1/3$) and integer ($2 > ν> 1$) quantum Hall regimes. On reducing the carrier density the temperature and electric field dependence of the resistivity show that the sample is still metallic at $p_{s}=1.3x10^{10} cm^{-2}$ ($r_{s}=21$), becoming insulating at $p_{s}{\simeq}1x10^{10} cm^{-2}$. Our results indicate that electron-electron interactions are dominant at these low densities, pointing to the many body origins of this metal-insulator transition. We note that the value of $r_{s}$ at the transition ($r_{s}=23 +/- 2$) is large enough to allow the formation of a weakly pinned Wigner crystal, and is approaching the value calculated for the condensation of a pure Wigner crystal.

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Metal-insulator transition at B=0 in a dilute two dimensional GaAs-AlGaAs hole gas

We report the observation of a metal insulator transition at B=0 in a high mobility two dimensional hole gas in a GaAs-AlGaAs heterostructure. A clear critical point separates the insulating phase from the metallic phase, demonstrating the existence of a well defined minimum metallic conductivity sigma(min)=2e/h. The sigma(T) data either side of the transition can be `scaled' on to one curve with a single parameter (To). The application of a parallel magnetic field increases sigma(min) and broadens the transition. We argue that strong electron-electron interactions (rs = 10) destroy phase coherence, removing quantum intereference corrections to the conductivity.

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Experimental studies of T--shaped quantum dot transistors: phase-coherent electron transport

We have measured the low-temperature transport properties of a T-shaped quantum dot. Replicated oscillations superimposed on one-dimensional conductance steps are observed. These structures are consistent with electron phase-coherent length resonance effects in the ballistic regime. Using a simple model, we suggest that both one-dimensional and two-dimensional electron-electron scattering gives rise to electron phase-breaking in our system.

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Correlation Effects on the Coupled Plasmon Modes of a Double Quantum Well

At temperatures comparable to the Fermi temperature, we have measured a plasmon enhanced Coulomb drag in a GaAs/AlGaAs double quantum well electron system. This measurement provides a probe of the many-body corrections to the coupled plasmon modes, and we present a detailed comparison between experiment and theory testing the validity of local field theories. Using a perpendicular magnetic field to raise the magnetoplasmon energy we can induce a crossover to single-particle Coulomb scattering.

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Experimental evidence of a metal-insulator transition in a half-filled Landau level

We have measured the low-temperature transport properties of a high-mobility front-gated GaAs/Al_{0.33}Ga_{0.67}As heterostructure. By changing the applied gate voltage, we can vary the amount of disorder within the system. At a Landau level filling factor $ν=1/2$, where the system can be described by the composite fermion picture, we observe a crossover from metallic to insulating behaviour as the disorder is increased. Experimental results and theoretical prediction are compared.

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Resonant transmission through an open quantum dot

We have measured the low-temperature transport properties of a quantum dot formed in a one-dimensional channel. In zero magnetic field this device shows quantized ballistic conductance plateaus with resonant tunneling peaks in each transition region between plateaus. Studies of this structure as a function of applied perpendicular magnetic field and source-drain bias indicate that resonant structure deriving from tightly bound states is split by Coulomb charging at zero magnetic field.

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Tunneling Between Parallel Two-Dimensional Electron Gases

The tunneling between two parallel two-dimensional electron gases has been investigated as a function of temperature $T$, carrier density $n$, and the applied perpendicular magnetic field $B$. In zero magnetic field the equilibrium resonant lineshape is Lorentzian, reflecting the Lorentzian form of the spectral functions within each layer. From the width of the tunneling resonance the lifetime of the electrons within a 2DEG has been measured as a function of $n$ and $T$, giving information about the density dependence of the electron-impurity scattering and the temperature dependence of the electron-electron scattering. In a magnetic field there is a general suppression of equilibrium tunneling for fields above $B=0.6$ T. A gap in the tunneling density of states has been measured over a wide range of magnetic fields and filling factors, and various theoretical predictions have been examined. In a strong magnetic field, when there is only one partially filled Landau level in each layer, the temperature dependence of the conductance characteristics has been modeled with a double-Gaussian spectral density.

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Fractional Quantum Hall Effect in Bilayer Two Dimensional Hole Gas Systems

We have studied the fractional and integer quantum Hall effect in high mobility double layer 2D hole gas systems. The large hole effective mass inhibits tunneling, allowing us to investigate the regime in which the interlayer and intralayer interactions are comparable without significant interlayer tunneling occurring. As the interlayer separation is reduced we observe the formation of bilayer correlated quantum Hall states at total filling factor $ν$=3/2 and $ν$=1. We find that the bilayer $ν$=3/2 state is rapidly destroyed by small carrier density imbalances between the layers, whereas the bilayer $ν$=1 state evolves continuously into the single layer $ν$=1 state.

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