arXiv subjects

D. A. Svintsov

Publications and source records attributed to D. A. Svintsov.

9 recordsLinked to original sources

arXiv2026

Electronic bistability, discontinuous switching and stochasticity in a two-dimensional semiconductor

Bistability - two stable electronic states under the same bias - underlies switching and memory, but is usually absent in transistors and must be engineered through material means: doped tunnel junctions, filaments in memristors, or phase transitions. Here we demonstrate a transistor with intrinsic electronic bistability in a single chemically homogeneous crystal. In dual-gated black phosphorus, whose band gap narrows under a perpendicular electric field due to a giant Stark effect, the gates not only modulate carrier density but also reshape the band profile, forming interband tunnel junctions in the channel. Transport across the two-gate parameter space reveals competing conduction regimes - diffusive, two tunnelling channels and Zener breakdown - whose interplay produces negative differential conductance and transconductance, discontinuous switching, and hysteresis with the state set by gate history. Moreover, the switching remains intrinsically stochastic, yet statistically stable within a narrow range of gate voltages, providing an electrically programmable source of randomness. Devices based on this principle should be realisable in other two-dimensional semiconductors, opening a route to next-generation computing architectures in which nonlinearity, switching, memory and stochasticity are integrated within a single electrostatically programmable element.

cond-mat.mes-hall↗

arXiv2026

Exact theory of plasmon reflection and transmission in partially gated two-dimensional system

We develop an exact theory of plasmon scattering at the boundary between gated and ungated regions of a two-dimensional electron system (2DES). Using the Wiener-Hopf technique, we derive analytical expressions for the complex reflection and transmission coefficients of plasmons incident from both sides of the interface. The theory fully accounts for evanescent fields at the gate edge and radiative losses into free-space electromagnetic waves. In the non-retarded limit and for small gate-2DES separation, the reflected plasmon dominates the total electric field, while radiative losses are negligible when plasmon scattering. The amplitudes and phases of the reflection and transmission coefficients for plasmons incident from both sides have a complex dependence from 2DES-gate separation and conductivity of 2DES. Our results provide a rigorous foundation for modeling tunable plasmonic crystals based on 2DES for terahertz detection and modulation.

cond-mat.other↗

arXiv2026

Graphene Zero-Bias Sub-Terahertz Turnkey Detector with Above 43 GHz Bandwidth

High-frequency terahertz (THz) detectors are vital for next-generation high-speed wireless communication systems. Graphene, with its high carrier mobility, broadband absorption, and weak electron-phonon coupling, offers great promise for ultra-fast THz photothermoelectric devices. Although graphene-based detectors in the infrared range have shown bandwidths above 500 GHz, extending their operation to the THz range is difficult because long-wavelength radiation does not efficiently couple to the small graphene area. To overcome this issue, THz antennas are often employed; however, their use typically limits system performance to only a few gigahertz due to parasitic effects. In this work, we present an antenna-coupled sub-THz graphene detector with a bandwidth exceeding 43 GHz. We optimized the detector design to minimize losses, match the antenna impedance to the 1 kOhm graphene channel, and maintain zero-bias operation. Importantly, we introduce a compact, turnkey packaged solution. Our results provide a practical route toward high-speed and low-power graphene THz detectors suitable for real-world communication and imaging applications.

cond-mat.mes-hall↗

arXiv2025

Discovery of Slot Plasma Excitations in a AlGaN/GaN Plasmonic Crystal

We experimentally investigate the terahertz spectrum of plasma excitations in a plasmonic crystal based on AlGaN/GaN two-dimensional electron system (2DES). While screened plasmon modes with linear dispersion are readily observed in the plasmonic crystals, the existence of unscreened modes localized in the slots between the gates has remained unobserved until now. We discover this slot plasma excitation exhibiting square-root dispersion. It turned out that these slot plasmons follow an unconventional wave-vector quantization rule, $q_u=(N + 1/4) \times \pi/l_u$ for even integers $N$, and require the condition for excitation $q_u h \ll 1$, where $h$ is the gate-to-2DES distance and $l_u$ is the slot width. We develop an analytical model that accurately captures the found dispersion and relaxation, revealing a non-trivial $-\pi/4$ phase shift upon plasmon reflection at the gate edge. Experiments demonstrate that the slot plasmons persist up to room temperature, thereby enabling a broad range of opportunities for the advancement of plasmonic devices.

cond-mat.mes-hall↗

arXiv2025

Electromagnetic drag in partly gated 2d electron system via highly confined screened plasmons

Generation of photocurrent via photon drag effect enables very fast light detection with response time limited by momentum relaxation. At the same time, photon drag in bulk uniform samples is small by the virtue of small photon momentum. We show that the edge of metal gate placed above a two-dimensional electron system (2DES) provides highly non-uniform electromagnetic field that enhances the drag effect. We study the drag photovoltage using an exact solution of diffraction problem for 2DES with semi-infinite metal gate. We show that the only non-trivial dimensionless parameters governing the drag responsivity are the 2DES conductivity scaled by the free-space impedance {\eta} and gate-2DES separation scaled by the incident wavelength d/{\lambda}0. For radiation with electric field polarized orthogonal to the gate edge, the responsivity is maximized for inductive 2d conductivity with Im{\eta} ~ 1 and Re{\eta} << 1, and becomes very small for the capacitive 2d conductivity. The electromagnetic ponderomotive force pushes the charge carriers under the gate at arbitrary 2d conductivity, and the force direction is opposite to that at metal-2DES lateral contact. These patterns are explained by the dominant role of gated 2d plasmons in the formation of PDE photovoltage.

cond-mat.other↗

arXiv2025

Enhanced Terahertz Thermoelectricity via Engineered van Hove Singularities and Nernst Effect in Moir\'e Superlattices

Thermoelectric materials, long explored for energy harvesting and thermal sensing, convert heat directly into electrical signals. Extending their application to the terahertz (THz) frequency range opens opportunities for low-noise, bias-free THz detection, yet conventional thermoelectrics lack the sensitivity required for practical devices. Thermoelectric coefficients can be strongly enhanced near van Hove singularities (VHS), though these are usually difficult to access in conventional materials. Here we show that moir\'e band engineering unlocks these singularities for THz optoelectronics. Using 2D moir\'e structures as a model system, we observe strong enhancement of the THz photothermoelectric response in monolayer and bilayer graphene superlattices when the Fermi level is tuned to band singularities. Applying a relatively small magnetic field further boosts the response through the THz-driven Nernst effect, a transverse thermoelectric current driven by the THz-induced temperature gradient. Our results establish moir\'e superlattices as a versatile platform for THz thermoelectricity and highlight engineered band structures as a route to high-performance THz optoelectronic devices.

cond-mat.mes-hall↗

arXiv2025

Interaction-limited conductivity of twisted bilayer graphene revealed by giant terahertz photoresistance

Identifying the microscopic processes that limit conductivity is essential for understanding correlated and quantum-critical states in quantum materials. In twisted bilayer graphene (TBG) and other twist-controlled materials, the temperature dependence of metallic resistivity follows power-law scaling, with the exponent spanning a broad range, rendering standard transport measurements insufficient to unambiguously identify the dominant scattering processes and giving rise to competing interpretations ranging from phonon-limited transport and umklapp scattering to strange metallicity and heavy fermion renormalization. Here, we use terahertz (THz) excitation to selectively raise the electron temperature in TBG while keeping the lattice cold, enabling a direct separation of electron-electron and electron-phonon contributions to resistivity. We observe a giant THz photoresistance, reaching up to 70% in magic-angle devices, demonstrating that electronic interactions dominate transport even in regimes previously attributed to phonons, including the linear-in-temperature resistivity near the magic angle. Away from the magic angle, we observe coexisting photoresistance and robust quadratic-in-temperature resistivity at extremely low carrier densities where standard electron-electron scattering mechanisms (umklapp and Baber inter-band scattering) are kinematically forbidden. Our analysis identifies the breakdown of Galilean invariance in the Dirac-type dispersion as a possible origin of the interaction-limited conductivity, arising from inter-valley electron-electron collisions. Beyond twisted bilayer graphene, our approach establishes THz-driven hot-electron transport as a general framework for disentangling scattering mechanisms in low-density quantum materials.

cond-mat.mes-hall↗

arXiv2025

Inverse Design of Broadband Antennas for Terahertz Devices Based on 2D Materials

Terahertz (THz) technology, a cornerstone of next-generation high-speed communication and sensing, has long been hindered by impedance mismatch challenges that limit device performance and applicability. These challenges become particularly pronounced when ultrasensitive two-dimensional (2D) materials are employed as the device substrate in the THz range, further complicating their integration into real-world applications. Furthermore, conventional antenna designs often fail to provide adequate matching across the extensive THz spectrum. In this work, we tackle these challenges using a procedural generation algorithm to design THz broadband antennas that satisfy specific performance criteria. Namely, the developed inverse design methodology enables customization for the target impedance value, bandwidth, and contact topology requirements. The proposed antenna achieves an improvement of up to 40\% in power transfer efficiency compared to traditional bow-tie antennas under realistic operating conditions. High-fidelity electromagnetic simulations validate these results, confirming the design's practicality for THz applications. This work addresses critical limitations of existing antenna designs and advances the feasibility of high-frequency applications in both communication and sensing.

physics.app-ph↗

arXiv2024

Anomalous terahertz photoconductivity caused by the superballistic flow of hydrodynamic electrons in graphene

Light incident upon materials can induce changes in their electrical conductivity, a phenomenon referred to as photoresistance. In semiconductors, the photoresistance is negative, as light-induced promotion of electrons across the band gap enhances the number of charge carriers participating in transport. In superconductors, the photoresistance is positive because of the destruction of the superconducting state, whereas in normal metals it is vanishing. Here we report a qualitative deviation from the standard behavior in metallic graphene. We show that Dirac electrons exposed to continuous wave (CW) terahertz (THz) radiation can be thermally decoupled from the lattice by 50~K which activates hydrodynamic electron transport. In this regime, the resistance of graphene constrictions experiences a decrease caused by the THz-driven superballistic flow of correlated electrons. We analyze the dependencies of the negative photoresistance on the carrier density, and the radiation power and show that our superballistic devices operate as sensitive phonon-cooled bolometers and can thus offer a picosecond-scale response time. Beyond their fundamental implications, our findings underscore the practicality of electron hydrodynamics in designing ultra-fast THz sensors and electron thermometers.

cond-mat.mes-hall↗