arXiv subjects

D. Alonso-Álvarez

Publications and source records attributed to D. Alonso-Álvarez.

4 recordsLinked to original sources

arXiv2025

Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots

We present experimental evidence of Sb incorporation inside InAs/GaA(001) quantum dots exposed to an antimony flux immediately before capping with GaAs. The Sb composition profile inside the nanostructures as measured by cross-sectional scanning tunneling and electron transmission microscopies show two differentiated regions within the quantum dots, with an Sb rich alloy at the tip of the quantum dots. Atomic force microscopy and transmission electron microscopy micrographs show increased quantum-dot height with Sb flux exposure. The evolution of the reflection high-energy electron-diffraction pattern suggests that the increased height is due to changes in the quantum-dot capping process related to the presence of segregated Sb atoms. These structural and compositional changes result in a shift of the room-temperature photoluminescence emission from 1.26 to 1.36 microns accompanied by an order of magnitude increase in the room-temperature quantum-dot luminescence intensity.

cond-mat.mtrl-sci↗

arXiv2018

Solcore: A multi-scale, python-based library for modelling solar cells and semiconductor materials

Computational models can provide significant insight into the operation mechanisms and deficiencies of photovoltaic solar cells. Solcore is a modular set of computational tools, written in Python 3, for the design and simulation of photovoltaic solar cells. Calculations can be performed on ideal, thermodynamic limiting behaviour, through to fitting experimentally accessible parameters such as dark and light IV curves and luminescence. Uniquely, it combines a complete semiconductor solver capable of modelling the optical and electrical properties of a wide range of solar cells, from quantum well devices to multi-junction solar cells. The model is a multi-scale simulation accounting for nanoscale phenomena such as the quantum confinement effects of semiconductor nanostructures, to micron level propagation of light through to the overall performance of solar arrays, including the modelling of the spectral irradiance based on atmospheric conditions. In this article we summarize the capabilities in addition to providing the physical insight and mathematical formulation behind the software with the purpose of serving as both a research and teaching tool.

physics.app-ph↗

arXiv2013

Strain driven migration of In during the growth of InAs/GaAs quantum posts

Using the mechano-optical stress sensor technique, we observe a counter-intuitive reduction of the compressive stress when InAs is deposited on GaAs (001) during growth of quantum posts. Through modelling of the strain fields, we find that such anomalous behaviour can be related to the strain-driven detachment of In atoms from the crystal and their surface diffusion towards the self-assembled nanostructures.

cond-mat.mtrl-sci↗

arXiv2011

Strain balanced quantum posts

Quantum posts are assembled by epitaxial growth of closely spaced quantum dot layers, modulating the composition of a semiconductor alloy, typically InGaAs. In contrast with most self-assembled nanostructures, the height of quantum posts can be controlled with nanometer precision, up to a maximum value limited by the accumulated stress due to the lattice mismatch. Here we present a strain compensation technique based on the controlled incorporation of phosphorous, which substantially increases the maximum attainable quantum post height. The luminescence from the resulting nanostructures presents giant linear polarization anisotropy.

cond-mat.mtrl-sci↗