arXiv subjects

D. Bortoletto

Publications and source records attributed to D. Bortoletto.

122 records · Page 7Linked to original sources

arXiv2007

Design and performance of the silicon sensors for the CMS barrel pixel detector

The CMS experiment at the LHC includes a hybrid silicon pixel detector for the reconstruction of charged tracks and of the interaction vertices. The barrel region consists of n-in-n sensors with 100X150 um^2 cell size processed on diffusion oxygenated float zone silicon. A biasing grid is implemented and pixel isolation is achieved with the moderated p-spray technique. An extensive test program was carried out on the H2 beam line of the CERN SPS. In this paper we describe the sensor layout, the beam test setup and the results obtained with both irradiated and non-irradiated prototype devices. Measurements of charge collection, hit detection efficiency, Lorentz angle and spatial resolution are presented.

physics.ins-det↗

arXiv2006

Simulation of Heavily Irradiated Silicon Pixel Detectors

We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trapping of charge carriers can be tuned to produce a good description of the measured charge collection profiles in the fluence range from 0.5x10^{14} Neq/cm^2 to 5.9x10^{14} Neq/cm^2. The model correctly predicts the variation in the profiles as the temperature is changed from -10C to -25C. The measured charge collection profiles are inconsistent with the linearly-varying electric fields predicted by the usual description based upon a uniform effective doping density. This observation calls into question the practice of using effective doping densities to characterize irradiated silicon. The model is now being used to calibrate pixel hit reconstruction algorithms for CMS.

physics.ins-det↗

arXiv2006

Observation, modeling, and temperature dependence of doubly peaked electric fields in irradiated silicon pixel sensors

physics.ins-det↗

arXiv2005

A double junction model of irradiated silicon pixel sensors for LHC

In this paper we discuss the measurement of charge collection in irradiated silicon pixel sensors and the comparison with a detailed simulation. The simulation implements a model of radiation damage by including two defect levels with opposite charge states and trapping of charge carriers. The modeling proves that a doubly peaked electric field generated by the two defect levels is necessary to describe the data and excludes a description based on acceptor defects uniformly distributed across the sensor bulk. In addition, the dependence of trap concentrations upon fluence is established by comparing the measured and simulated profiles at several fluences and bias voltages.

physics.ins-det↗

arXiv2005

Search for First-Generation Scalar Leptoquarks in $\bm{p \bar{p}}$ collisions at $\sqrt{s}$=1.96 TeV

We report on a search for pair production of first-generation scalar leptoquarks ($LQ$) in $p \bar{p}$ collisions at $\sqrt{s}$=1.96 TeV using an integrated luminosity of 203 $pb^{-1}$ collected at the Fermilab Tevatron collider by the CDF experiment. We observe no evidence for $LQ$ production in the topologies arising from $LQ \bar{LQ} \to eqeq$ and $LQ \bar{LQ} \to eq νq$, and derive 95% C.L. upper limits on the $LQ$ production cross section. %as a function of $β$, where $β$ is the branching fraction for $LQ \to eq$. The results are combined with those obtained from a separately reported CDF search in the topology arising from $LQ\bar{LQ} \to νq νq$ and 95% C.L. lower limits on the LQ mass as a function of $β= BR(LQ \to eq) $ are derived. The limits are 236, 205 and 145 GeV/c$^2$ for $β$ = 1, $β$ = 0.5 and $β$ = 0.1, respectively.

hep-ex↗

arXiv2005

Extraction of electric field in heavily irradiated silicon pixel sensors

A new method for the extraction of the electric field in the bulk of heavily irradiated silicon pixel sensors is presented. It is based on the measurement of the Lorentz deflection and mobility of electrons as a function of depth. The measurements were made at the CERN H2 beam line, with the beam at a shallow angle with respect to the pixel sensor surface. The extracted electric field is used to simulate the charge collection and the Lorentz deflection in the pixel sensor. The simulated charge collection and the Lorentz deflection is in good agreement with the measurements both for non-irradiated and irradiated up to 1E15 neq/cm2 sensors.

physics.ins-det↗

arXiv2005

Fluence Dependence of Charge Collection of irradiated Pixel Sensors

The barrel region of the CMS pixel detector will be equipped with ``n-in-n'' type silicon sensors. They are processed on DOFZ material, use the moderated p-spray technique and feature a bias grid. The latter leads to a small fraction of the pixel area to be less sensitive to particles. In order to quantify this inefficiency prototype pixel sensors irradiated to particle fluences between $4.7\times 10^{13}$ and $2.6\times 10^{15} \Neq$ have been bump bonded to un-irradiated readout chips and tested using high energy pions at the H2 beam line of the CERN SPS. The readout chip allows a non zero suppressed analogue readout and is therefore well suited to measure the charge collection properties of the sensors. In this paper we discuss the fluence dependence of the collected signal and the particle detection efficiency. Further the position dependence of the efficiency is investigated.

physics.ins-det↗

arXiv2004

Searching for SUSY at the Tevatron

An overview of recent experimental searches for SUSY particles is presented. These searches are based on data collected by the CDF and the \D0 experiments operating at the Fermilab Tevatron proton-antiproton collider with $\sqrt{s}$ = 1.96 TeV. The review focuses on searches for squarks and gluinos in final states with missing transverse energy and jets. Emphasis will be given to the search for the gluino decaying into a sbottom and $b$ quark with each sbottom decaying into a $b$ quark and a neutralino. This scenario yields events containing 4 $b$-jets and missing transverse energy.

hep-ex↗

arXiv2004

Comparison of Three-jet Events in Proton-Antiproton Collisions at Center-of-mass Energy 1.8 TeV to Predictions from a Next-to-leading Order QCD Calculation

The properties of three-jet events with total transverse energy greater than 320 GeV and individual jet energy greater than 20 GeV have been analyzed and compared to absolute predictions from a next-to-leading order (NLO) perturbative QCD calculation. These data, of integrated luminosity 86 pb^-1, were recorded by the CDF Experiment for proton-antiproton collisions at sqrt{s}=1.8 TeV. This study tests a model of higher order QCD processes that result in gluon emission and can be used to estimate the magnitude of the contribution of processes higher than NLO. The total cross section is measured to be 466 +/- 3(stat.)^{+207}_{-70}(syst.) pb. The differential cross section is furthermore measured for all kinematically accessible regions of the Dalitz plane, including those for which the theoretical prediction is unreliable. While the measured cross section is consistent with the theoretical prediction in magnitude, the two differ somewhat in shape in the Dalitz plane.

hep-ex↗

arXiv2004

Type inversion in irradiated silicon: a half truth

Charge collection measurements performed on heavily irradiated p-spray dofz pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field within the detectors. The data are compared with a complete charge transport simulation of the sensor which includes signal trapping and charge induction effects. A linearly varying electric field based upon the standard picture of a constant type-inverted effective doping density is inconsistent with the data. A two-trap double junction model implemented in ISE TCAD software can be tuned to produce a doubly-peaked electric field which describes the data reasonably well at two different fluences. The modeled field differs somewhat from previous determinations based upon the transient current technique. The model can also account for the level of signal trapping observed in the data.

physics.ins-det↗

arXiv2004

Position Dependence of Charge Collection in Prototype Sensors for the CMS Pixel Detector

This paper reports on the sensor R&D activity for the CMS pixel detector. Devices featuring several design and technology options have been irradiated up to a proton fluencec of 1E15 n_eq/cm**2 at the CERN PS. Afterward they were bump bonded to unirradiated readout chips and tested using high energy pions in the H2 beam line of the CERN SPS. The readout chip allows a non zero suppressed full analogue readout and therefore a good characterization of the sensors in terms of noise and charge collection properties. The position dependence of signal is presented and the differences between the two sensor options are discussed.

physics.ins-det↗

arXiv2003

Tests of silicon sensors for the CMS pixel detector

The tracking system of the CMS experiment, currently under construction at the Large Hadron Collider (LHC) at CERN (Geneva, Switzerland), will include a silicon pixel detector providing three spacial measurements in its final configuration for tracks produced in high energy pp collisions. In this paper we present the results of test beam measurements performed at CERN on irradiated silicon pixel sensors. Lorentz angle and charge collection efficiency were measured for two sensor designs and at various bias voltages.

physics.ins-det↗

arXiv2002

B Physics at Hadron Colliders

Hadron colliders have played, and will continue to play, a crucial role in the understanding of CP violation. Their impact is expected to be especially important in the study of CP asymmetries in rare decays and the $B_s$ meson. The experimental challenge and reach of current and future experiments is discussed.

hep-ex↗

arXiv1999

The measurement of sin(2beta)

Since the first observation in 1964, CP violation remains one of the most elusive aspects of the standard model. The CDF collaboration has reported the first evidence of CP violation in the B system using the world's largest sample of $B \to J/ψK^0_S $ decays. The direct measurement of sin$(2β)$=0.79$^{+0.41}_{-0.44}$ (combined statistical and systematic error) agrees with the standard model predictions. New data collected from the B-factories and from the upgraded experiments at the Tevatron should allow a more precise measurement of $\sin 2β$ in the near future.

hep-ex↗