arXiv subjects
Publications and source records attributed to D. D. Solnyshkov.
We propose the scheme of a novel spin-optronic device, optical analog of Datta and Das spin transistor for the electrons. The role of the ferromagnetic-nonmagnetic contact is played by a spatially confined cavity polariton BEC. The condensate is responsible for the appearance of effective magnetic field which rotates the spin state of a propagating pulse of polaritons allowing to tune the transmittivity of the device.
We propose a novel spin-optronic device based on the interference of polaritonic waves traveling in opposite directions and gaining topological Berry phase. It is governed by the ratio of the TE-TM and Zeeman splittings, which can be used to control the output intensity. Because of the peculiar orientation of the TE-TM effective magnetic field for polaritons, there is no analogue of the Aharonov- Casher phase shift existing for electrons.
We observe the build up of strong (~50%) spontaneous vector polarisation in emission from a GaN-based polariton laser excited by short optical pulses at room temperature. The Stokes vector of emitted light changes its orientation randomly from one excitation pulse to another, so that the time-integrated polarisation remains zero. This behaviour is completely different to any previous laser. We interpret this observation in terms of the spontaneous symmetry breaking in a Bose-Einstein condensate of exciton-polaritons.
The non-local dielectric response theory is extended to describe oblique reflection of light from quantum wells subjected to the magnetic field. This allows us to calculate the dispersion and polarization of the exciton-polariton modes in semiconductor microcavities in the presence of a magnetic field normal to the plane of the structure. We show that due to the interplay between the exciton Zeeman splitting and TE-TM splitting of the photon modes, four polariton dispersion branches are formed with a polarization gradually changing from circular in the exciton-like part to linear in the photon-like part of each branch. Faraday rotation in quantum microcavities is shown to be strongly enhanced as compared with the rotation in quantum wells.
We show theoretically that entangled photon pairs can be produced on demand through the biexciton decay of a quantum dot strongly coupled to the modes of a photonic crystal. The strong coupling allows to tune the energy of the mixed exciton-photon (polariton) eigenmodes, and to overcome the natural splitting existing between the exciton states coupled with different linear polarizations of light. Polariton states are moreover well protected against dephasing due to their lifetime ten to hundred times shorter than that of a bare exciton. Our analysis shows that the scheme proposed can be achievable with the present technology.
This comment has been withdrawn by the authors due to crucial error.
We report the calculation of cavity exciton-polariton phase diagram which takes into account the presence of realistic structural disorder. Polaritons are modelled as weakly interacting two-dimensional bosons. We show that with increasing density polaritons first undergo a quasi-phase transition towards a Bose glass: the condensate is localized in at least one minimum of the disorder potential, depending on the value of the chemical potential of the polariton system. A further increase of the density leads to a percolation process of the polariton fluid which gives rise to a Kosterlitz-Thouless phase transition towards superfluidity. The spatial representation of the condensate wavefunction as well as the spectrum of elementary excitations are obtained from the solution of the Gross-Pitaevskii equation for all the phases.
New effects of polarization multistability and polarization hysteresis in a coherently driven polariton condensate in a semiconductor microcavity are predicted and theoretically analyzed. The multistability arises due to polarization-dependent polariton-polariton interactions and can be revealed in polarization resolved photoluminescence experiments. The pumping power required to observe this effect is of 4 orders of magnitude lower than the characteristic pumping power in conventional bistable optical systems.
We present the general kinetic formalism for the description of spin and energy relaxation of the cavity polaritons in the framework of the Born-Markov approximation. All essential mechanisms of polaritons redistribution in reciprocal space together with final state bosonic stimulation are taken into account, from our point of view. The developed theory is applied to describe our experimental results on the polarization dynamics obtained in the polariton parametric amplifier geometry (pumping at so-called magic angle). We have experimentally confirmed that the anisotropy of the polariton-polariton interaction is responsible for the build up of the cross-linear polarisation of the signal. The long-living linear polarization is observed at zero detuning. Under elliptical pumping, we have directly measured in the time domain and modelled the effect of self-induced Larmor precession.
We demonstrate that the 3.42 eV photoluminescence (PL) band in GaN is of the same intrinsic origin as the near-edge $\sim$3.47 eV band, but arises from regions of inversed polarity characterized by different strain and growth rate. Two absorption edges are thermally detected at 0.35 K in nanocolumn structures, exhibiting both bands. Micro-PL studies have shown similar temperature/power behavior of these bands, with a competition in intensity in closely spaced spots accompanied by alterations of exciton level ordering. Strain-induced one-dimensional carrier confinement in small inversion domains likely explains the discrete narrow lines observed between the bands.
Mie resonances due to scattering/absorption of light in InN containing clusters of metallic In may have been erroneously interpreted as the infrared band gap absorption in tens of papers. Here we show by direct thermally detected optical absorption measurements that the true band gap of InN is markedly wider than currently accepted 0.7 eV. Micro-cathodoluminescence studies complemented by imaging of metallic In have shown that bright infrared emission at 0.7-0.8 eV arises from In aggregates, and is likely associated with surface states at the metal/InN interfaces.