arXiv subjects

D. Datta

Publications and source records attributed to D. Datta.

3 recordsLinked to original sources

arXiv2024

Equivalence of flexible stripline and coaxial cables for superconducting qubit control and readout pulses

We report a comparative study on microwave control lines for a transmon qubit using: (i) flexible stripline transmission lines, and (ii) semi-rigid coaxial cables. During each experiment we performed repeated measurements of the energy relaxation and coherence times of a transmon qubit using one of the wiring configurations. Each measurement run spanned 70 h to 250 h of measurement time, and four separate cooldowns were performed so that each configuration could be tested twice. From these datasets we observe that changing the microwave control lines from coaxial cables to flexible stripline transmission lines does not have a measurable effect on coherence compared to thermal cycling the system, or random coherence fluctuations. Our results open up the possibility of large scale integration of qubit control lines with integrated component with planar layouts on flexible substrate.

quant-ph↗

arXiv2022

Qubit-compatible substrates with superconducting through-silicon vias

We fabricate and characterize superconducting through-silicon vias and electrodes suitable for superconducting quantum processors. We measure internal quality factors of a million for test resonators excited at single-photon levels, on chips with superconducting vias used to stitch ground planes on the front and back sides of the chips. This resonator performance is on par with the state of the art for silicon-based planar solutions, despite the presence of vias. Via stitching of ground planes is an important enabling technology for increasing the physical size of quantum processor chips, and is a first step toward more complex quantum devices with three-dimensional integration.

quant-ph↗

arXiv2007

Analysis of atomic depth profiles directly extracted from Rutherford backscattering data for co-sputtered and ion irradiated Au-Ni films

Co-sputtered Au-Ni thin films having thickness of 30 nm were deposited on Si(100) substrates and irradiated with 160 keV ^{40}Ar^{+} under ambient condition at a number of fluences and analyzed using Rutherford backscattering spectrometry (RBS). The variation of Au signal counts in the RBS spectra with ion dose has been investigated. The distribution of Au, Ni and Si atoms over various depths within the as deposited and irradiated samples have been computed using the backscattering data by means of a direct analytical method. Au and Si profiles have been fitted with error function and the relative changes in variance for various ion fluences compared to that of as deposited profiles have been studied. The spreading rates of different constituents across the interface due to Ar ion impact have also been discussed.

cond-mat.mtrl-sci↗