arXiv subjects

D. E. Savage

Publications and source records attributed to D. E. Savage.

At least 19 recordsLinked to original sources

arXiv2024

Control of threshold voltages in Si/SiGe quantum devices via optical illumination

Optical illumination of quantum-dot qubit devices at cryogenic temperatures, while not well studied, is often used to recover operating conditions after undesired shocking events or charge injection. Here, we demonstrate systematic threshold voltage shifts in a dopant-free, Si/SiGe field effect transistor using a near infrared (780 nm) laser diode. We find that illumination under an applied gate voltage can be used to set a specific, stable, and reproducible threshold voltage that, over a wide range in gate bias, is equal to that gate bias. Outside this range, the threshold voltage can still be tuned, although the resulting threshold voltage is no longer equal to the applied gate bias during illumination. We present a simple and intuitive model that provides a mechanism for the tunability in gate bias. The model presented also explains why cryogenic illumination is successful at resetting quantum dot qubit devices after undesired charging events.

cond-mat.mes-hall↗

arXiv2022

SiGe quantum wells with oscillating Ge concentrations for quantum dot qubits

Large-scale arrays of quantum-dot spin qubits in Si/SiGe quantum wells require large or tunable energy splittings of the valley states associated with degenerate conduction band minima. Existing proposals to deterministically enhance the valley splitting rely on sharp interfaces or modifications in the quantum well barriers that can be difficult to grow. Here, we propose and demonstrate a new heterostructure, the "Wiggle Well," whose key feature is Ge concentration oscillations inside the quantum well. Experimentally, we show that placing Ge in the quantum well does not significantly impact our ability to form and manipulate single-electron quantum dots. We further observe large and widely tunable valley splittings, from 54 to 239 ueV. Tight-binding calculations, and the tunability of the valley splitting, indicate that these results can mainly be attributed to random concentration fluctuations that are amplified by the presence of Ge alloy in the heterostructure, as opposed to a deterministic enhancement due to the concentration oscillations. Quantitative predictions for several other heterostructures point to the Wiggle Well as a robust method for reliably enhancing the valley splitting in future qubit devices.

quant-ph↗

arXiv2022

Toward Robust Autotuning of Noisy Quantum Dot Devices

The current autotuning approaches for quantum dot (QD) devices, while showing some success, lack an assessment of data reliability. This leads to unexpected failures when noisy or otherwise low-quality data is processed by an autonomous system. In this work, we propose a framework for robust autotuning of QD devices that combines a machine learning (ML) state classifier with a data quality control module. The data quality control module acts as a "gatekeeper" system, ensuring that only reliable data are processed by the state classifier. Lower data quality results in either device recalibration or termination. To train both ML systems, we enhance the QD simulation by incorporating synthetic noise typical of QD experiments. We confirm that the inclusion of synthetic noise in the training of the state classifier significantly improves the performance, resulting in an accuracy of 95.0(9) % when tested on experimental data. We then validate the functionality of the data quality control module by showing that the state classifier performance deteriorates with decreasing data quality, as expected. Our results establish a robust and flexible ML framework for autonomous tuning of noisy QD devices.

quant-ph↗

arXiv2021

Valley splittings in Si/SiGe quantum dots with a germanium spike in the silicon well

Silicon-germanium heterostructures have successfully hosted quantum dot qubits, but the intrinsic near-degeneracy of the two lowest valley states poses an obstacle to high fidelity quantum computing. We present a modification to the Si/SiGe heterostructure by the inclusion of a spike in germanium concentration within the quantum well in order to increase the valley splitting. The heterostructure is grown by chemical vapor deposition and magnetospectroscopy is performed on gate-defined quantum dots to measure the excited state spectrum. We demonstrate a large and widely tunable valley splitting as a function of applied vertical electric field and lateral dot confinement. We further investigate the role of the germanium spike by means of tight-binding simulations in single-electron dots and show a robust doubling of the valley splitting when the spike is present, as compared to a standard (spike-free) heterostructure. This doubling effect is nearly independent of the electric field, germanium content of the spike, and spike location. This experimental evidence of a stable, tunable quantum dot, despite a drastic change to the heterostructure, provides a foundation for future heterostructure modifications.

cond-mat.mes-hall↗

arXiv2020

Auto-tuning of double dot devices in situ with machine learning

The current practice of manually tuning quantum dots (QDs) for qubit operation is a relatively time-consuming procedure that is inherently impractical for scaling up and applications. In this work, we report on the {\it in situ} implementation of a recently proposed autotuning protocol that combines machine learning (ML) with an optimization routine to navigate the parameter space. In particular, we show that a ML algorithm trained using exclusively simulated data to quantitatively classify the state of a double-QD device can be used to replace human heuristics in the tuning of gate voltages in real devices. We demonstrate active feedback of a functional double-dot device operated at millikelvin temperatures and discuss success rates as a function of the initial conditions and the device performance. Modifications to the training network, fitness function, and optimizer are discussed as a path toward further improvement in the success rate when starting both near and far detuned from the target double-dot range.

quant-ph↗

arXiv2018

Benchmarking Gate Fidelities in a Si/SiGe Two-Qubit Device

We report the first complete characterization of single-qubit and two-qubit gate fidelities in silicon-based spin qubits, including cross-talk and error correlations between the two qubits. To do so, we use a combination of standard randomized benchmarking and a recently introduced method called character randomized benchmarking, which allows for more reliable estimates of the two-qubit fidelity in this system. Interestingly, with character randomized benchmarking, the two-qubit CPhase gate fidelity can be obtained by studying the additional decay induced by interleaving the CPhase gate in a reference sequence of single-qubit gates only. This work sets the stage for further improvements in all the relevant gate fidelities in silicon spin qubits beyond the error threshold for fault-tolerant quantum computation.

quant-ph↗

arXiv2018

The critical role of substrate disorder in valley splitting in Si quantum wells

Motivated by theoretical predictions that spatially complex concentration modulations of Si and Ge can increase the valley splitting in quantum wells, we grow and characterize Si/SiGe heterostructures with a thin, pure Ge layer at the top of the quantum well using chemical vapor deposition. We show that these heterostructures remain hosts for high-mobility electron gases. We measure two quantum wells with approximately five monolayers of pure Ge at the upper barrier, finding mobilities as high as 70,000 cm$^2$/Vs, compared to 100,000 cm$^2$/Vs measured in samples with no Ge layer. Activation energy measurements in quantum Hall states corresponding to Fermi levels in the gap between different valley states reveal energy gaps ranging from 30 to over 200 $μ$eV, and we extract a surprisingly strong dependence of the energy gap on electron density. We interpret our results using tight binding theory and argue that our results are evidence that atomic scale disorder at the quantum well interface dominates the behavior of the valley splittings of these modified heterostructures.

cond-mat.mes-hall↗

arXiv2018

A programmable two-qubit quantum processor in silicon

With qubit measurement and control fidelities above the threshold of fault-tolerance, much attention is moving towards the daunting task of scaling up the number of physical qubits to the large numbers needed for fault tolerant quantum computing. Here, quantum dot based spin qubits may offer significant advantages due to their potential for high densities, all-electrical operation, and integration onto an industrial platform. In this system, the initialisation, readout, single- and two-qubit gates have been demonstrated in various qubit representations. However, as seen with other small scale quantum computer demonstrations, combining these elements leads to new challenges involving qubit crosstalk, state leakage, calibration, and control hardware which provide invaluable insight towards scaling up. Here we address these challenges and demonstrate a programmable two-qubit quantum processor in silicon by performing both the Deutsch-Josza and the Grover search algorithms. In addition, we characterise the entanglement in our processor through quantum state tomography of Bell states measuring state fidelities between 85-89% and concurrences between 73-80%. These results pave the way for larger scale quantum computers using spins confined to quantum dots.

cond-mat.mes-hall↗

arXiv2018

Signatures of atomic-scale structure in the energy dispersion and coherence of a Si quantum-dot qubit

We report anomalous behavior in the energy dispersion of a three-electron double-quantum-dot hybrid qubit and argue that it is caused by atomic-scale disorder at the quantum-well interface. By employing tight-binding simulations, we identify potential disorder profiles that induce behavior consistent with the experiments. The results indicate that disorder can give rise to "sweet spots" where the decoherence caused by charge noise is suppressed, even in a parameter regime where true sweet spots are unexpected. Conversely, "hot spots" where the decoherence is enhanced can also occur. Our results suggest that, under appropriate conditions, interfacial atomic structure can be used as a tool to enhance the fidelity of Si double-dot qubits.

cond-mat.mes-hall↗

arXiv2017

Valley dependent anisotropic spin splitting in silicon quantum dots

Spin qubits hosted in silicon (Si) quantum dots (QD) are attractive due to their exceptionally long coherence times and compatibility with the silicon transistor platform. To achieve electrical control of spins for qubit scalability, recent experiments have utilized gradient magnetic fields from integrated micro-magnets to produce an extrinsic coupling between spin and charge, thereby electrically driving electron spin resonance (ESR). However, spins in silicon QDs experience a complex interplay between spin, charge, and valley degrees of freedom, influenced by the atomic scale details of the confining interface. Here, we report experimental observation of a valley dependent anisotropic spin splitting in a Si QD with an integrated micro-magnet and an external magnetic field. We show by atomistic calculations that the spin-orbit interaction (SOI), which is often ignored in bulk silicon, plays a major role in the measured anisotropy. Moreover, inhomogeneities such as interface steps strongly affect the spin splittings and their valley dependence. This atomic-scale understanding of the intrinsic and extrinsic factors controlling the valley dependent spin properties is a key requirement for successful manipulation of quantum information in Si QDs.

cond-mat.mes-hall↗

arXiv2017

Extending the coherence of a quantum dot hybrid qubit

Identifying and ameliorating dominant sources of decoherence are important steps in understanding and improving quantum systems. Here we show that the free induction decay time ($T_{2}^{*}$) and the Rabi decay rate ($Γ_{\mathrm{Rabi}}$) of the quantum dot hybrid qubit can be increased by more than an order of magnitude by appropriate tuning of the qubit parameters and operating points. By operating in the spin-like regime of this qubit, and choosing parameters that increase the qubit's resilience to charge noise (which we show is presently the limiting noise source for this qubit), we achieve a Ramsey decay time $T_{2}^{*}$ of $177~\mathrm{ns}$ and a Rabi decay time, $1/Γ_{\mathrm{Rabi}}$, exceeding $1~\mathrm{μs}$. We find that the slowest $Γ_{\mathrm{Rabi}}$ is limited by fluctuations in the Rabi frequency induced by charge noise and not by fluctuations in the qubit energy itself.

cond-mat.mes-hall↗

arXiv2017

Effects of charge noise on a pulse-gated singlet-triplet $S-T_-$ qubit

We study the dynamics of a pulse-gated semiconductor double quantum dot qubit. In our experiments, the qubit coherence times are relatively long, but the visibility of the quantum oscillations is low. We show that these observations are consistent with a theory that incorporates decoherence arising from charge noise that gives rise to detuning fluctuations of the double dot. Because effects from charge noise are largest near the singlet-triplet avoided level crossing, the visibility of the oscillations are low when the singlet-triplet avoided level crossing occurs in the vicinity of the charge degeneracy point crossed during the manipulation, but there is only modest dephasing at the large detuning value at which the quantum phase accumulates. This theory agrees well with experimental data and predicts that the visibility can be increased greatly by appropriate tuning of the interdot tunneling rate.

cond-mat.mes-hall↗

arXiv2017

Dressed photon-orbital states in a quantum dot: Inter-valley spin resonance

The valley degree of freedom is intrinsic to spin qubits in Si/SiGe quantum dots. It has been viewed alternately as a hazard, especially when the lowest valley-orbit splitting is small compared to the thermal energy, or as an asset, most prominently in proposals to use the valley degree of freedom itself as a qubit. Here we present experiments in which microwave electric field driving induces transitions between both valley-orbit and spin states. We show that this system is highly nonlinear and can be understood through the use of dressed photon-orbital states, enabling a unified understanding of the six microwave resonance lines we observe. Some of these resonances are inter-valley spin transitions that arise from a non-adiabatic process in which both the valley and the spin degree of freedom are excited simultaneously. For these transitions, involving a change in valley-orbit state, we find a tenfold increase in sensitivity to electric fields and electrical noise compared to pure spin transitions, strongly reducing the phase coherence when changes in valley-orbit index are incurred. In contrast to this non-adiabatic transition, the pure spin transitions, whether arising from harmonic or subharmonic generation, are shown to be adiabatic in the orbital sector. The non-linearity of the system is most strikingly manifest in the observation of a dynamical anti-crossing between a spin-flip, inter-valley transition and a three-photon transition enabled by the strong nonlinearity we find in this seemly simple system.

cond-mat.mes-hall↗

arXiv2016

State-conditional coherent charge qubit oscillations in a Si/SiGe quadruple quantum dot

Universal quantum computation requires high fidelity single qubit rotations and controlled two qubit gates. Along with high fidelity single qubit gates, strong efforts have been made in developing robust two qubit logic gates in electrically-gated quantum dot systems to realize a compact and nano-fabrication-compatible architecture. Here, we perform measurements of state-conditional coherent oscillations of a charge qubit. Using a quadruple quantum dot formed in a Si/SiGe heterostructure, we show the first demonstration of coherent two-axis control of a double quantum dot charge qubit in undoped Si/SiGe, performing Larmor and Ramsey oscillation measurements. We extract the strength of the capacitive coupling between double quantum dots by measuring the detuning energy shift ($\approx$ 75 $μ$eV) of one double dot depending on the excess charge configuration of the other double dot. We further demonstrate that the strong capacitive coupling allows fast conditional Landau-Zener-Stuckelberg interferences with conditonal $π$ phase flip time about 80 ps, showing promising pathways toward multi-qubit entanglement control in semiconductor quantum dots.

cond-mat.mes-hall↗

arXiv2016

Gate fidelity and coherence of an electron spin in a Si/SiGe quantum dot with micromagnet

The gate fidelity and the coherence time of a qubit are important benchmarks for quantum computation. We construct a qubit using a single electron spin in a Si/SiGe quantum dot and control it electrically via an artificial spin-orbit field from a micromagnet. We measure an average single-qubit gate fidelity of $\approx$ 99$\%$ using randomized benchmarking, which is consistent with dephasing from the slowly evolving nuclear spins in substrate. The coherence time measured using dynamical decoupling extends up to $\approx$ 400 $μ$s for 128 decoupling pulses, with no sign of saturation. We find evidence that the coherence time is limited by noise in the 10 kHz $-$ 1 MHz range, possibly because charge noise affecting the spin via the micromagnet gradient. This work shows that an electron spin in a Si/SiGe quantum dot is a good candidate for quantum information processing as well as for a quantum memory, even without isotopic purification.

cond-mat.mes-hall↗

arXiv2015

Characterization of a gate-defined double quantum dot in a Si/SiGe nanomembrane

We report the fabrication and characterization of a gate-defined double quantum dot formed in a Si/SiGe nanomembrane. In the past, all gate-defined quantum dots in Si/SiGe heterostructures were formed on top of strain-graded virtual substrates. The strain grading process necessarily introduces misfit dislocations into a heterostructure, and these defects introduce lateral strain inhomogeneities, mosaic tilt, and threading dislocations. The use of a SiGe nanomembrane as the virtual substrate enables the strain relaxation to be entirely elastic, eliminating the need for misfit dislocations. However, in this approach the formation of the heterostructure is more complicated, involving two separate epitaxial growth procedures separated by a wet-transfer process that results in a buried non-epitaxial interface 625 nm from the quantum dot. We demonstrate that in spite of this buried interface in close proximity to the device, a double quantum dot can be formed that is controllable enough to enable tuning of the inter-dot tunnel coupling, the identification of spin states, and the measurement of a singlet-to-triplet transition as a function of an applied magnetic field.

cond-mat.mes-hall↗

arXiv2015

Identifying single electron charge sensor events using wavelet edge detection

The operation of solid-state qubits often relies on single-shot readout using a nanoelectronic charge sensor, and the detection of events in a noisy sensor signal is crucial for high fidelity readout of such qubits. The most common detection scheme, comparing the signal to a threshold value, is accurate at low noise levels but is not robust to low-frequency noise and signal drift. We describe an alternative method for identifying charge sensor events using wavelet edge detection. The technique is convenient to use and we show that, with realistic signals and a single tunable parameter, wavelet detection can outperform thresholding and is significantly more tolerant to 1/f and low-frequency noise.

cond-mat.mes-hall↗

arXiv2015

Transport through an impurity tunnel coupled to a Si/SiGe quantum dot

Achieving controllable coupling of dopants in silicon is crucial for operating donor-based qubit devices, but it is difficult because of the small size of donor-bound electron wavefunctions. Here we report the characterization of a quantum dot coupled to a localized electronic state, and we present evidence of controllable coupling between the quantum dot and the localized state. A set of measurements of transport through this device enable the determination of the most likely location of the localized state, consistent with an electronically active impurity in the quantum well near the edge of the quantum dot. The experiments we report are consistent with a gate-voltage controllable tunnel coupling, which is an important building block for hybrid donor and gate-defined quantum dot devices.

cond-mat.mes-hall↗