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D. G. Schlom

Publications and source records attributed to D. G. Schlom.

64 records · Page 4Linked to original sources
arXiv2006

Multiferroic Domain Dynamics in Strained Strontium Titanate

Multiferroicity can be induced in strontium titanate by applying biaxial strain, resulting in the coexistence of both ferroelectric and antiferrodistortive domains. The magnitude and sign of the strain imposed on the lattice by design can be used to tune the phase transitions and interactions between these two phenomena. Using optical second harmonic generation, we report a transition from centrosymmetric 4/mmm phase to ferroelectric mm2, followed by an antiferrodistortive transition to a coupled ferroelastic-ferroelectric mm2 phase in a strontium titanate thin film strained in biaxial tension by 0.94%. The results agree well with theoretical first principles and phase-field predictions. Direct imaging of domains arising from the ferroelectric phase transition, and its switching under electric fields is demonstrated using piezoelectric force microscopy. Nonlinear optics combined with phase-field modeling is used to show that the dominant multiferroic domain switching mechanism is through coupled 90 degree ferroelectric-ferroelastic domain wall motion. More broadly, these studies of coexisting ferroelectric (polar) and antiferrodistortive rotation (axial) phenomena could have relevance to multiferroics with coexisting ferroelectric (polar) and magnetic (axial) phenomena.

cond-mat.mtrl-sci↗
arXiv2005

Structural and transport properties of epitaxial NaxCoO2 thin films

We have studied structural and transport properties of epitaxial NaxCoO2 thin films on (0001) sapphire substrate prepared by topotaxially converting an epitaxial Co3O4 film to NaxCoO2 with annealing in Na vapor. The films are c axis oriented and in-plane aligned with [10 1 0] NaxCoO2 rotated by 30 degrees from [10 1 0] sapphire. Different Na vapor pressures during the annealing resulted in films with different Na concentrations, which showed distinct transport properties.

cond-mat.str-el↗
arXiv2004

Properties of MgB2 thin films with carbon doping

We have studied structural and superconducting properties of MgB2 thin films doped with carbon during the hybrid physical-chemical vapor deposition process. A carbon-containing metalorganic precursor bis(cyclopentadienyl)magnesium was added to the carrier gas to achieve carbon doping. As the amount of carbon in the films increases, the resistivity increases, Tc decreases, and the upper critical field increases dramatically as compared to the clean films. The self-field Jc in the carbon-doped films is lower than that in the clean films, but Jc remains relatively high to much higher magnetic fields, indicating stronger pinning. Structurally, the doped films are textured with nano-grains and highly resistive amorphous areas at the grain boundaries. The carbon doping approach can be used to produce MgB2 materials for high magnetic field applications.

cond-mat.supr-con↗
arXiv2003

Thickness dependence of the properties of epitaxial MgB2 thin films grown by hybrid physical-chemical vapor deposition

We have studied the effect of deposition rate and layer thickness on the properties of epitaxial MgB2 thin films grown by hybrid physical-chemical vapor deposition on 4H-SiC substrates. The MgB2 film deposition rate depends linearly on the concentration of B2H6 in the inlet gas mixture. We found that the superconducting and normal-state properties of the MgB2 films are determined by the film thickness, not by the deposition rate. When the film thickness was increased, the transition temperature, Tc, increased and the residual resistivity, rho0, decreased. Above about 300 nm, a Tc of 41.8 K, a rho0 of 0.28 mikroOhm.cm, and a residual resistance ratio RRR of over 30 were obtained. These values represent the best MgB2 properties reported thus far.

cond-mat.supr-con↗
arXiv2002

Synthesis and Properties of c-axis Oriented Epitaxial MgB2 Thin Films

We report the growth and properties of epitaxial MgB2 thin films on (0001) Al2O3 substrates. The MgB2 thin films were prepared by depositing boron films via RF magnetron sputtering, followed by a post-deposition anneal at 850C in magnesium vapor. X-ray diffraction and cross-sectional TEM reveal that the epitaxial MgB2 films are oriented with their c-axis normal to the (0001) Al2O3 substrate and a 30 degree rotation in the ab-plane with respect to the substrate. The critical temperature was found to be 35 K and the anisotropy ratio, Hc2(parallel to the film) / Hc2(pendicular to the film), about 3 at 25K. The critical current densities at 4.2 K and 20 K (at 1 T perpendicular magnetic field) are 5x10E6 A/cm2 and 1x10E6 A/cm2, respectively. The controlled growth of epitaxial MgB2 thin films opens a new avenue in both understanding superconductivity in MgB2 and technological applications.

cond-mat.supr-con↗
arXiv2002

In situ epitaxial MgB2 thin films for superconducting electronics

A thin film technology compatible with multilayer device fabrication is critical for exploring the potential of the 39-K superconductor magnesium diboride for superconducting electronics. Using a Hybrid Physical-Chemical Vapor Deposition (HPCVD) process, it is shown that the high Mg vapor pressure necessary to keep the MgB$_2$ phase thermodynamically stable can be achieved for the {\it in situ} growth of MgB$_2$ thin films. The films grow epitaxially on (0001) sapphire and (0001) 4H-SiC substrates and show a bulk-like $T_c$ of 39 K, a $J_c$(4.2K) of $1.2 \times 10^7$ A/cm$^2$ in zero field, and a $H_{c2}(0)$ of 29.2 T in parallel magnetic field. The surface is smooth with a root-mean-square roughness of 2.5 nm for MgB$_2$ films on SiC. This deposition method opens tremendous opportunities for superconducting electronics using MgB$_2$.

cond-mat.mtrl-sci↗
arXiv2001

Superconducting properties of nanocrystalline MgB$_2$ thin films made by an in situ annealing process

We have studied the structural and superconducting properties of MgB$_2$ thin films made by pulsed laser deposition followed by in situ annealing. The cross-sectional transmission electron microscopy reveals a nanocrystalline mixture of textured MgO and MgB$_2$ with very small grain sizes. A zero-resistance transition temperature ($T_{c0}$) of 34 K and a zero-field critical current density ($J_c$) of $1.3 \times 10^6$ A/cm$^2$ were obtained. The irreversibility field was $\sim$ 8 T at low temperatures, although severe pinning instability was observed. These bulk-like superconducting properties show that the in situ deposition process can be a viable candidate for MgB$_2$ Josephson junction technologies.

cond-mat.mtrl-sci↗
arXiv2001

Electronic anisotropy, magnetic field-temperature phase diagram and their dependence on resistivity in c-axis oriented MgB2 thin films

An important predicted, but so far uncharacterized, property of the new superconductor MgB2 is electronic anisotropy arising from its layered crystal structure. Here we report on three c-axis oriented thin films, showing that the upper critical field anisotropy ratio Hc2par/Hc2perp is 1.8 to 2.0, the ratio increasing with higher resistivity. Measurements of the magnetic field-temperature phase diagram show that flux pinning disappears at H* ~ 0.8Hc2perp(T) in untextured samples. Hc2par(0) is strongly enhanced by alloying to 39 T for the highest resistivity film, more than twice that seen in bulk samples.

cond-mat.supr-con↗
arXiv2001

Thermodynamics of the Mg-B system: Implications for the deposition of MgB2 thin films

We have studied thermodynamics of the Mg-B system with the modeling technique CALPHAD using a computerized optimization procedure. Temperature-composition, pressure-composition, and pressure-temperature phase diagrams under different conditions are obtained. The results provide helpful insights into appropriate processing conditions for thin films of the superconducting phase, MgB2, including the identification of the pressure/temperature region for adsorption-controlled growth. Due to the high volatility of Mg, MgB2 is thermodynamically stable only under fairly high Mg overpressures for likely growth temperatures. This constraint places severe temperature constraints on deposition techniques employing high vacuum conditions.

cond-mat.mtrl-sci↗