arXiv subjects

D. Gammon

Publications and source records attributed to D. Gammon.

At least 19 recordsLinked to original sources

arXiv2020

Spectral broadening of optical transitions at tunneling resonances in InAs/GaAs coupled quantum dot pairs

We report on linewidth analysis of optical transitions in InAs/GaAs coupled quantum dots as a function of bias voltage, temperature, and tunnel coupling strength. A significant line broadening up to 100 $\mu$eV is observed at hole tunneling resonances where the coherent tunnel coupling between spatially direct and indirect exciton states is maximized, corresponding to a phonon-assisted transition rate of 150 ns${}^{-1}$ at 20 K. With increasing temperature, the linewidth shows broadening characteristic of single-phonon transitions. The linewidth as a function of tunnel coupling strength tracks the theoretical prediction of linewidth broadening due to phonon-assisted transitions, and is maximized with an energy splitting between the two exciton branches of 0.8$-$0.9 meV. This report highlights the linewidth broadening mechanisms and fundamental aspects of the interaction between these systems and the local environment.

cond-mat.mes-hall↗

arXiv2012

Demonstration of quantum entanglement between a single electron spin confined to an InAs quantum dot and a photon

The electron spin state of a singly charged semiconductor quantum dot has been shown to form a suitable single qubit for quantum computing architectures with fast gate times. A key challenge in realizing a useful quantum dot quantum computing architecture lies in demonstrating the ability to scale the system to many qubits. In this letter, we report an all optical experimental demonstration of quantum entanglement between a single electron spin confined to single charged semiconductor quantum dot and the polarization state of a photon spontaneously emitted from the quantum dot's excited state. We obtain a lower bound on the fidelity of entanglement of 0.59, which is 84% of the maximum achievable given the timing resolution of available single photon detectors. In future applications, such as measurement based spin-spin entanglement which does not require sub-nanosecond timing resolution, we estimate that this system would enable near ideal performance. The inferred (usable) entanglement generation rate is 3 x 10^3 s^-1. This spin-photon entanglement is the first step to a scalable quantum dot quantum computing architecture relying on photon (flying) qubits to mediate entanglement between distant nodes of a quantum dot network.

quant-ph↗

arXiv2009

Fast spin rotations by optically controlled geometric phases in a quantum dot

We demonstrate optical control of the geometric phase acquired by one of the spin states of an electron confined in a charge-tunable InAs quantum dot via cyclic 2pi excitations of an optical transition in the dot. In the presence of a constant in-plane magnetic field, these optically induced geometric phases result in the effective rotation of the spin about the magnetic field axis and manifest as phase shifts in the spin quantum beat signal generated by two time-delayed circularly polarized optical pulses. The geometric phases generated in this manner more generally perform the role of a spin phase gate, proving potentially useful for quantum information applications.

cond-mat.mes-hall↗

arXiv2009

Hole Spin Mixing in InAs Quantum Dot Molecules

Holes confined in single InAs quantum dots have recently emerged as a promising system for the storage or manipulation of quantum information. These holes are often assumed to have only heavy-hole character and further assumed to have no mixing between orthogonal heavy hole spin projections (in the absence of a transverse magnetic field). The same assumption has been applied to InAs quantum dot molecules formed by two stacked InAs quantum dots that are coupled by coherent tunneling of the hole between the two dots. We present experimental evidence of the existence of a hole spin mixing term obtained with magneto-photoluminescence spectroscopy on such InAs quantum dot molecules. We use a Luttinger spinor model to explain the physical origin of this hole spin mixing term: misalignment of the dots along the stacking direction breaks the angular symmetry and allows mixing through the light-hole component of the spinor. We discuss how this novel spin mixing mechanism may offer new spin manipulation opportunities that are unique to holes.

cond-mat.mtrl-sci↗

arXiv2009

All-Optical Ultrafast Control and Read-Out of a Single Negatively Charged Self-Assembled InAs Quantum Dot

We demonstrate the all-optical ultrafast manipulation and read-out of optical transitions in a single negatively charged self-assembled InAs quantum dot, an important step towards ultrafast control of the resident spin. Experiments performed at zero magnetic field show the excitation and decay of the trion (negatively charged exciton) as well as Rabi oscillations between the electron and trion states. Application of a DC magnetic field perpendicular to the growth axis of the dot enables observation of a complex quantum beat structure produced by independent precession of the ground state electron and the excited state heavy hole spins.

cond-mat.mes-hall↗

arXiv2009

Characterization of the Shell Structure in Coupled Quantum Dots through Resonant Optical Probing

Excited states in single quantum dots (QDs) have been shown to be useful for spin state initialization and manipulation. For scalable quantum information processing it is necessary to have multiple spins interacting. Therefore, we present initial results from photoluminescence excitation studies of excited states in coupled quantum dots (CQDs). Due to the rich set of possible excitation and recombination possibilities, a technique for visualizing photoluminescence excitation in coupled quantum dots is discussed, by which both the interaction between the dots and the type of absorption and emission that generated the photoluminescence is easily and clearly revealed. As an example, this technique is applied to characterize the shell structure of the hole in the top dot and the results are compared with those using Level Anti-Crossing Spectroscopy (LACS).

cond-mat.other↗

arXiv2009

Electric field tunable exchange interaction in InAs/GaAs coupled quantum dots

Spin manipulation in coupled quantum dots is of interest for quantum information applications. Control of the exchange interaction between electrons and holes via an applied electric field may provide a promising technique for such spin control. Polarization dependent photoluminescence (PL) spectra were used to investigate the spin dependent interactions in coupled quantum dot systems and by varying an electric field, the ground state hole energy levels are brought into resonance, resulting in the formation of molecular orbitals observed as anticrossings between the direct and indirect transitions in the spectra. The indirect and direct transitions of the neutral exciton demonstrate high and low circular polarization memory respectively due to variation in the exchange interaction. The ratio between the polarization values as a function of electric field, and the barrier height was measured. These results indicate a possible method of tuning between indirect and direct configurations to control the degree of exchange interaction.

cond-mat.other↗

arXiv2008

Antibonding ground states in semiconductor artificial molecules

The spin-orbit interaction is a crucial element of many semiconductor spintronic technologies. Here we report the first experimental observation, by magneto-optical spectroscopy, of a remarkable consequence of the spin-orbit interaction for holes confined in the molecular states of coupled quantum dots. As the thickness of the barrier separating two coupled quantum dots is increased, the molecular ground state changes character from a bonding orbital to an antibonding orbital. This result is counterintuitive, and antibonding molecular ground states are never observed in natural diatomic molecules. We explain the origin of the reversal using a four band k.p model that has been validated by numerical calculations that account for strain. The discovery of antibonding molecular ground states provides new opportunities for the design of artificially structured materials with complex molecular properties that cannot be achieved in natural systems.

cond-mat.mtrl-sci↗

arXiv2008

Stimulated Raman spin coherence and spin-flip induced hole burning in charged GaAs quantum dots

High-resolution spectral hole burning (SHB) in coherent nondegenerate differential transmission spectroscopy discloses spin-trion dynamics in an ensemble of negatively charged quantum dots. In the Voigt geometry, stimulated Raman spin coherence gives rise to Stokes and anti-Stokes sidebands on top of the trion spectral hole. The prominent feature of an extremely narrow spike at zero detuning arises from spin population pulsation dynamics. These SHB features confirm coherent electron spin dynamics in charged dots, and the linewidths reveal spin spectral diffusion processes.

cond-mat.mes-hall↗

arXiv2008

A Single Charged Quantum Dot in a Strong Optical Field: Absorption, Gain, and the AC Stark Effect

We investigate a singly-charged quantum dot under a strong optical driving field by probing the system with a weak optical field. When the driving field is detuned from the trion transition, the probe absorption spectrum is shifted from the trion resonance as a consequence of the dynamic Stark effect. Simultaneously, a gain sideband is created, resulting from the coherent energy transfer between the optical fields through the quantum dot nonlinearity. As the pump detuning is moved from red to blue, we map out the anticrossing of these two spectral lines. The optical Bloch equations for a stationary two-level atom can be used to describe the numerous spectral features seen in this nano solid state system.

cond-mat.mes-hall↗

arXiv2007

Photoluminescence Spectroscopy of the Molecular Biexciton in Vertically Stacked Quantum Dot Pairs

We present photoluminescence studies of the molecular neutral biexciton-exciton spectra of individual vertically stacked InAs/GaAs quantum dot pairs. We tune either the hole or the electron levels of the two dots into tunneling resonances. The spectra are described well within a few-level, few-particle molecular model. Their properties can be modified broadly by an electric field and by structural design, which makes them highly attractive for controlling nonlinear optical properties.

cond-mat.other↗

arXiv2006

Electrically tunable g-factors in quantum dot molecular spin states

We present a magneto-photoluminescence study of individual vertically stacked InAs/GaAs quantum dot pairs separated by thin tunnel barriers. As an applied electric field tunes the relative energies of the two dots, we observe a strong resonant increase or decrease in the g-factors of different spin states that have molecular wavefunctions distributed over both quantum dots. We propose a phenomenological model for the change in g-factor based on resonant changes in the amplitude of the wavefunction in the barrier due to the formation of bonding and antibonding orbitals.

cond-mat.mtrl-sci↗

arXiv2006

Electrical control of optical orientation of neutral and negatively charged excitons in n-type semiconductor quantum well

We report a giant electric field induced increase of spin orientation of excitons in n-type GaAs/AlGaAs quantum well. It correlates strongly with the formation of negatively charged excitons (trions) in the photoluminescence spectra. Under resonant excitation of neutral heavy-hole excitons, the polarization of excitons and trions increases dramatically with electrical injection of electrons within the narrow exciton-trion bias transition in the PL spectra, implying a polarization sensitivity of 200 % per Volt. This effect results from a very efficient trapping of neutral excitons by the quantum well interfacial fluctuations (so-called "natural" quantum dots) containing resident electrons.

cond-mat.mes-hall↗

arXiv2006

Engineering electron and hole tunneling with asymmetric InAs quantum dot molecules

Most self-assembled quantum dot molecules are intrinsically asymmetric with inequivalent dots resulting from imperfect control of crystal growth. We have grown vertically-aligned pairs of InAs/GaAs quantum dots by molecular beam epitaxy, introducing intentional asymmetry that limits the influence of intrinsic growth fluctuations and allows selective tunneling of electrons or holes. We present a systemic investigation of tunneling energies over a wide range of interdot barrier thickness. The concepts discussed here provide an important tool for the systematic design and characterization of more complicated quantum dot nanostructures.

cond-mat.mtrl-sci↗

arXiv2006

Spin Fine Structure in Optically Excited Quantum Dot Molecules

The interaction between spins in coupled quantum dots is revealed in distinct fine structure patterns in the measured optical spectra of InAs/GaAs double quantum dot molecules containing zero, one, or two excess holes. The fine structure is explained well in terms of a uniquely molecular interplay of spin exchange interactions, Pauli exclusion and orbital tunneling. This knowledge is critical for converting quantum dot molecule tunneling into a means of optically coupling not just orbitals, but spins.

cond-mat.other↗

arXiv2006

Internal transitions of quasi-2D charged magneto-excitons in the presence of purposely introduced weak lateral potential energy variations

Optically detected resonance spectroscopy has been used to investigate effects of weak random lateral potential energy fluctuations on internal transitions of charged magneto-excitons (trions) in quasi two-dimensional GaAs/AlGaAs quantum-well (QW) structures. Resonant changes in the ensemble photoluminescence induced by far-infrared radiation were studied as a function of magnetic field for samples having: 1) no growth interrupts (short range well-width fluctuations), and 2) intentional growth interrupts (long range monolayer well-width differences). Only bound-to-continuum internal transitions of the negatively charged trion are observed for samples of type 1. In contrast, a feature on the high field (low energy) side of electron cyclotron resonance is seen for samples of type 2 with well widths of 14.1 and 8.4 nm. This feature is attributed to a bound-to-bound transition of the spin-triplet with non-zero oscillator strength resulting from breaking of translational symmetry.

cond-mat.mes-hall↗

arXiv2005

Polarized fine structure in the excitation spectrum of a negatively charged quantum dot

We report polarized photoluminescence excitation spectroscopy of the negative trion in single charge tunable InAs/GaAs quantum dots. The spectrum exhibits a p-shell resonance with polarized fine structure arising from the direct excitation of the electron spin triplet states. The energy splitting arises from the axially symmetric electron-hole exchange interaction. The magnitude and sign of the polarization are understood from the spin character of the triplet states and a small amount of quantum dot asymmetry, which mixes the wavefunctions through asymmetric e-e and e-h exchange interactions.

cond-mat.other↗

arXiv2005

Stimulated and spontaneous optical generation of electron spin coherence in charged GaAs quantum dots

We report on the coherent optical excitation of electron spin polarization in the ground state of charged GaAs quantum dots via an intermediate charged exciton (trion) state. Coherent optical fields are used for the creation and detection of the Raman spin coherence between the spin ground states of the charged quantum dot. The measured spin decoherence time, which is likely limited by the nature of the spin ensemble, approaches 10 ns at zero field. We also show that the Raman spin coherence in the quantum beats is caused not only by the usual stimulated Raman interaction but also by simultaneous spontaneous radiative decay of either excited trion state to a coherent combination of the two spin states.

cond-mat.mes-hall↗