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D. Goldhaber-Gordon

Publications and source records attributed to D. Goldhaber-Gordon.

At least 37 records · Page 2Linked to original sources

Spatially probed electron-electron scattering in a two-dimensional electron gas

Using scanning gate microscopy (SGM), we probe the scattering between a beam of electrons and a two-dimensional electron gas (2DEG) as a function of the beam's injection energy, and distance from the injection point. At low injection energies, we find electrons in the beam scatter by small-angles, as has been previously observed. At high injection energies, we find a surprising result: placing the SGM tip where it back-scatters electrons increases the differential conductance through the system. This effect is explained by a non-equilibrium distribution of electrons in a localized region of 2DEG near the injection point. Our data indicate that the spatial extent of this highly non-equilibrium distribution is within ~1 micrometer of the injection point. We approximate the non-equilibrium region as having an effective temperature that depends linearly upon injection energy.

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Coulomb Blockade in an Open Quantum Dot

We report the observation of Coulomb blockade in a quantum dot contacted by two quantum point contacts each with a single fully-transmitting mode, a system previously thought to be well described without invoking Coulomb interactions. At temperatures below 50 mK we observe a periodic oscillation in the conductance of the dot with gate voltage that corresponds to a residual quantization of charge. From the temperature and magnetic field dependence, we infer the oscillations are Mesoscopic Coulomb Blockade, a type of Coulomb blockade caused by electron interference in an otherwise open system.

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Unexpected features of branched flow through high-mobility two-dimensional electron gases

GaAs-based two-dimensional electron gases (2DEGs) show a wealth of remarkable electronic states, and serve as the basis for fast transistors, research on electrons in nanostructures, and prototypes of quantum-computing schemes. All these uses depend on the extremely low levels of disorder in GaAs 2DEGs, with low-temperature mean free paths ranging from microns to hundreds of microns. Here we study how disorder affects the spatial structure of electron transport by imaging electron flow in three different GaAs/AlGaAs 2DEGs, whose mobilities range over an order of magnitude. As expected, electrons flow along narrow branches that we find remain straight over a distance roughly proportional to the mean free path. We also observe two unanticipated phenomena in high-mobility samples. In our highest-mobility sample we observe an almost complete absence of sharp impurity or defect scattering, indicated by the complete suppression of quantum coherent interference fringes. Also, branched flow through the chaotic potential of a high-mobility sample remains stable to significant changes to the initial conditions of injected electrons.

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Electron interferometer formed with a scanning probe tip and quantum point contact

We show an electron interferometer between a quantum point contact (QPC) and a scanning gate microscope (SGM) tip in a two-dimensional electron gas. The QPC and SGM tip act as reflective barriers of a lossy cavity; the conductance through the system thus varies as a function of the distance between the QPC and SGM tip. We characterize how temperature, electron wavelength, cavity length, and reflectivity of the QPC barrier affect the interferometer. We report checkerboard interference patterns near the QPC and, when injecting electrons above or below the Fermi energy, effects of dephasing.

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Observation of a One-Dimensional Spin-Orbit Gap in a Quantum Wire

Understanding the flow of spins in magnetic layered structures has enabled an increase in data storage density in hard drives over the past decade of more than two orders of magnitude1. Following this remarkable success, the field of 'spintronics' or spin-based electronics is moving beyond effects based on local spin polarisation and is turning its attention to spin-orbit interaction (SOI) effects, which hold promise for the production, detection and manipulation of spin currents, allowing coherent transmission of information within a device. While SOI-induced spin transport effects have been observed in two- and three-dimensional samples, these have been subtle and elusive, often detected only indirectly in electrical transport or else with more sophisticated techniques. Here we present the first observation of a predicted 'spin-orbit gap' in a one-dimensional sample, where counter-propagating spins, constituting a spin current, are accompanied by a clear signal in the easily-measured linear conductance of the system.

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Contact resistance and shot noise in graphene transistors

Potential steps naturally develop in graphene near metallic contacts. We investigate the influence of these steps on the transport in graphene Field Effect Transistors. We give simple expressions to estimate the voltage-dependent contribution of the contacts to the total resistance and noise in the diffusive and ballistic regimes.

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Evidence of Klein tunneling in graphene p-n junctions

Transport through potential barriers in graphene is investigated using a set of metallic gates capacitively coupled to graphene to modulate the potential landscape. When a gate-induced potential step is steep enough, disorder becomes less important and the resistance across the step is in quantitative agreement with predictions of Klein tunneling of Dirac fermions up to a small correction. We also perform magnetoresistance measurements at low magnetic fields and compare them to recent predictions.

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Universal Scaling in Non-equilibrium Transport Through a Single-Channel Kondo Dot

Scaling laws and universality play an important role in our understanding of critical phenomena and the Kondo effect. Here we present measurements of non-equilibrium transport through a single-channel Kondo quantum dot at low temperature and bias. We find that the low-energy Kondo conductance is consistent with universality between temperature and bias and characterized by a quadratic scaling exponent, as expected for the spin-1/2 Kondo effect. The non-equilibrium Kondo transport measurements are well-described by a universal scaling function with two scaling parameters.

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Evidence of the role of contacts on the observed electron-hole asymmetry in graphene

We perform electrical transport measurements in graphene with several sample geometries. In particular, we design ``invasive'' probes crossing the whole graphene sheet as well as ``external'' probes connected through graphene side arms. The four-probe conductance measured between external probes varies linearly with charge density and is symmetric between electron and hole types of carriers. In contrast measurements with invasive probes give a strong electron-hole asymmetry and a sub-linear conductance as a function of density. By comparing various geometries and types of contact metal, we show that these two observations are due to transport properties of the metal/graphene interface. The asymmetry originates from the pinning of the charge density below the metal, which thereby forms a p-n or p-p junction depending on the polarity of the carriers in the bulk graphene sheet. Our results also explain part of the sub-linearity observed in conductance as a function of density in a large number of experiments on graphene, which has generally been attributed to short-range scattering only.

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An off-board quantum point contact as a sensitive detector of cantilever motion

Recent advances in the fabrication of microelectromechanical systems (MEMS) and their evolution into nanoelectromechanical systems (NEMS) have allowed researchers to measure extremely small forces, masses, and displacements. In particular, researchers have developed position transducers with resolution approaching the uncertainty limit set by quantum mechanics. The achievement of such resolution has implications not only for the detection of quantum behavior in mechanical systems, but also for a variety of other precision experiments including the bounding of deviations from Newtonian gravity at short distances and the measurement of single spins. Here we demonstrate the use of a quantum point contact (QPC) as a sensitive displacement detector capable of sensing the low-temperature thermal motion of a nearby micromechanical cantilever. Advantages of this approach include versatility due to its off-board design, compatibility with nanoscale oscillators, and, with further development, the potential to achieve quantum limited displacement detection.

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Transport measurements across a tunable potential barrier in graphene

The peculiar nature of electron scattering in graphene is among many exciting theoretical predictions for the physical properties of this material. To investigate electron scattering properties in a graphene plane, we have created a gate-tunable potential barrier within a single-layer graphene sheet. We report measurements of electrical transport across this structure as the tunable barrier potential is swept through a range of heights. When the barrier is sufficiently strong to form a bipolar junctions (npn or pnp) within the graphene sheet, the resistance across the barrier sharply increases. We compare these results to predictions for both diffusive and ballistic transport, as the barrier rises on a length scale comparable to the mean free path. Finally, we show how a magnetic field modifies transport across the barrier.

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Kondo Physics in Nanotubes: Magnetic-field dependence and singlet-triplet Kondo

In a single-walled carbon nanotube, we observe the spin-1/2 Kondo effect. The energy of spin-resolved Kondo peaks is proportional to magnetic field at high fields, contrary to recent reports. At lower fields, the energy falls below this linear dependence, in qualitative agreement with theoretical expectations. For even electron occupancy, we observe a spin-1 Kondo effect due to the degeneracy of the triplet ground states. Tuning gate voltage within the same Coulomb diamond drives a transition to a singlet ground state. We also independently tune the energy difference between singlet and triplet states with a magnetic field. The Zeeman splitting thus measured confirms the value of the g-factor measured from the spin-1/2 Kondo feature.

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Transport Properties of Carbon Nanotube C$_{60}$ Peapods

We measure the conductance of carbon nanotube peapods from room temperature down to 250mK. Our devices show both metallic and semiconducting behavior at room temperature. At the lowest temperatures, we observe single electron effects. Our results suggest that the encapsulated C$_{60}$ molecules do not introduce substantial backscattering for electrons near the Fermi level. This is remarkable given that previous tunneling spectroscopy measurements show that encapsulated C$_{60}$ strongly modifies the electronic structure of a nanotube away from the Fermi level.

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Kondo Effect in Mesoscopic Quantum Dots

A dilute concentration of magnetic impurities can dramatically affect the transport properties of an otherwise pure metal. This phenomenon, known as the Kondo effect, originates from the interactions of individual magnetic impurities with the conduction electrons. Nearly a decade ago, the Kondo effect was observed in a new system, in which the magnetic moment stems from a single unpaired spin in a lithographically defined quantum dot, or artificial atom. The discovery of the Kondo effect in artificial atoms spurred a revival in the study of Kondo physics, due in part to the unprecedented control of relevant parameters in these systems. In this review we discuss the physics, origins, and phenomenology of the Kondo effect in the context of recent quantum dot experiments.

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Supplementary Information for cond-mat/0610721: Potok et al. "Observation of the two-channel Kondo effect"

This document provides detailed descriptions of data acquisition and data analysis in support of the accompanying Article, cond-mat/0610721: Observation of the two-channel Kondo effect. Some of the most intriguing problems in solid state physics arise when the motion of one electron dramatically affects the motion of surrounding electrons. Traditionally, such highly-correlated electron systems have been studied mainly in materials with complex transition metal chemistry. Over the past decade, researchers have learned to confine one or a few electrons within a nanoscale semiconductor "artificial atom", and to understand and control this simple system in exquisite detail. In the accompanying Article, we combine such individually well-understood components to create a novel highly-correlated electron system within a nano-engineered semiconductor structure. We tune the system in situ through a quantum phase transition between two distinct states, one familiar and one subtly new. The boundary between these states is a quantum critical point: the exotic and previously elusive two-channel Kondo state, in which electrons in two reservoirs are entangled through their interaction with a single localized spin.

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Observation of the two-channel Kondo effect

Some of the most intriguing problems in solid state physics arise when the motion of one electron dramatically affects the motion of surrounding electrons. Traditionally, such highly-correlated electron systems have been studied mainly in materials with complex transition metal chemistry. Over the past decade, researchers have learned to confine one or a few electrons within a nanoscale semiconductor "artificial atom", and to understand and control this simple system in exquisite detail. In this Article, we combine such individually well-understood components to create a novel highly-correlated electron system within a nano-engineered semiconductor structure. We tune the system in situ through a quantum phase transition between two distinct states, one familiar and one subtly new. The boundary between these states is a quantum critical point: the exotic and previously elusive two-channel Kondo state, in which electrons in two reservoirs are entangled through their interaction with a single localized spin.

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Dissipative quantum phase transition in a quantum dot

We study the transport properties of a quantum dot (QD) with highly resistive gate electrodes, and show that the QD displays a quantum phase transition analogous to the famous dissipative phase transition first identified by S. Chakravarty [Phys. Rev. Lett. {\bf 49}, 681 (1982)]; for a review see [A. J. Leggett {\em et al.}, Rev. Mod. Phys. {\bf 59}, 1 (1987)]. At temperature T=0, the charge on the central island of a conventional QD changes smoothly as a function of gate voltage, due to quantum fluctuations. However, for sufficiently large gate resistance charge fluctuations on the island can freeze out even at the degeneracy point, causing the charge on the island to change in sharp steps as a function of gate voltage. For $R_g<R_C$ the steps remain smeared out by quantum fluctuations. The Coulomb blockade peaks in conductance display anomalous scaling at intermediate temperatures, and at very low temperatures a sharp step develops in the QD conductance.

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A Tunable Anomalous Hall Effect in a Non-Ferromagnetic System

We measure the low-field Hall resistivity of a magnetically-doped two-dimensional electron gas as a function of temperature and electrically-gated carrier density. Comparing these results with the carrier density extracted from Shubnikov-de Haas oscillations reveals an excess Hall resistivity that increases with decreasing temperature. This excess Hall resistivity qualitatively tracks the paramagnetic polarization of the sample, in analogy to the ferromagnetic anomalous Hall effect. The data are consistent with skew-scattering of carriers by disorder near the crossover to localization.

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