arXiv subjects

D. Grützmacher

Publications and source records attributed to D. Grützmacher.

At least 19 recordsLinked to original sources

arXiv2026

Development and characterization of YBa$_2$Cu$_3$O$_{7-x}$/SrTiO$_3$ nanomembrane platform for silicon photonics integration

Integration of high-temperature superconducting devices with photonic circuits requires a material platform that preserves superconducting properties, provides interfacial heat transport control and optical accessibility. A YBa$_2$Cu$_3$O$_{7-x}$/SrTiO$_3$ (YBCO/STO) nanomembrane platform, enabling integration with SiO$_2$/Si substrates, is developed and characterized. Millimeter-scale ultra-thin YBCO films are grown on a STO/Sr$_{1.5}$Ca$_{1.5}$Al$_2$O$_6$ bilayer, released on a STO nanomembrane, and transferred onto SiO$_2$/Si substrates. X-ray diffraction confirms that crystallinity of STO and YBCO is preserved after transfer. Microbridges patterned from transferred YBCO films exhibit a critical temperature of 88.8 K and a critical current density of 6.8 MA/cm$^2$ at 77 K, comparable with those of YBCO films on STO substrates. Statistical measurements show a device fabrication yield of 93%, a critical-temperature variation of only 0.05 K, and 10% variation in critical current density, demonstrating excellent reproducibility. The thermal boundary conductance across the van der Waals interface between the YBCO/STO platform and the SiO$_2$/Si substrate is strongly reduced compared to that of epitaxial YBCO film on STO substrate. The reduced thermal coupling prolongs nonequilibrium states in superconducting nanostructures, which is advantageous for detector applications. These results establish ultra-thin YBCO films on optically transparent STO nanomembranes as a platform for integrating high-T$_c$ superconducting devices with silicon photonics.

cond-mat.supr-con↗

arXiv2024

Resonant Raman scattering of surface phonon polaritons mediated by excitons in WSe$_2$ films

Surface phonon-polaritons propagating along interfaces of polar dielectrics coexist with excitons in many van der Waals heterostructures, so understanding their mutual interactions is of great interest. Here, we investigate the type I surface phonon polariton of hBN via low-temperature resonant-Raman spectroscopy in hBN/WSe2 heterostructures. The resonantly enhanced hBN surface phonon polariton (SPhP) Raman signal, when laser energy is such that the scattered photons have energy close to that of the WSe2 excitons, enables detailed characterization of type I SPhP in hBN even when hBN is one monolayer thick. We find that the measured bandwidth of the SPhP Raman signal depends on the thicknesses of the hBN layer. We are able explain the experimental data using transfer matrix method simulations of SPhP dispersions providing that we assume the Raman scattering to be momentum non-conserving, as could be the case if localized WSe2 exciton states participated in the process. We further show that resonant Raman scattering from SiO2 SPhP can also be mediated by WSe$_2$.

cond-mat.mes-hall↗

arXiv2023

In-plane anisotropy of electrical transport in Y$_{0.85}$Tb$_{0.15}$Ba$_2$Cu$_3$O$_{7-x}$ films

We fabricate high-quality c-axis oriented epitaxial YBa$_2$Cu$_3$O$_{7-x}$ films with 15% of yttrium atoms replaced by terbium (YTBCO) and study their electrical properties. The Tb substitution reduces the charge carrier density resulting in increased resistivity and decreased critical current density compared to the pure YBa$_2$Cu$_3$O$_{7-x}$ films. The electrical properties of the YTBCO films show an in-plane anisotropy in both the superconducting and normal state providing evidence for the twin-free film. Unexpectedly, the resistive transition of the bridges also demonstrates the in-plane anisotropy that can be explained within the framework of Tinkham's model of the resistive transition and the Berezinskii-Kosterlitz-Thouless (BKT) model depending on the sample parameters. We consider YTBCO films to be a promising platform for both the fundamental research on the BKT transition in the cuprate superconductors and for the fabrication of devices with high kinetic inductance.

cond-mat.supr-con↗

arXiv2023

Quantum size effects in ultra-thin YBa2Cu3O7-x films

The d-wave symmetry of the order parameter with zero energy gap in nodal directions stands in the way of using high-temperature superconductors for quantum applications. We investigate the symmetry of the order parameter in ultra-thin YBa2Cu3O7-x (YBCO) films by measuring the electrical transport properties of nanowires and nanoconstrictions aligned at different angles relative to the main crystallographic axes. The anisotropy of the nanowire critical current in the nodal and antinodal directions reduces with the decrease in the film thickness. The Andreev reflection spectroscopy shows the presence of a thickness-dependent energy gap that doesn't exist in bulk YBCO. We find that the thickness-dependent energy gap appears due to the quantum size effects in ultra-thin YBCO films that open the superconducting energy gap along the entire Fermi surface. The fully gapped state of the ultra-thin YBCO films makes them a very promising platform for quantum applications, including quantum computing and quantum communications.

cond-mat.supr-con↗

arXiv2022

Efficient, Spectrally Tunable Single-Photon Sources Based on Chlorine-Doped ZnSe Nanopillars

Isolated impurity states in epitaxially grown semiconductor systems possess important radiative features such as distinct wavelength emission with a very short radiative lifetime and low inhomogeneous broadening which makes them promising for the generation of indistinguishable single photons. In this study, we investigate chlorine-doped ZnSe/ZnMgSe quantum well (QW) nanopillar (NP) structures as a highly efficient solid-state single-photon source operating at cryogenic temperatures. We show that single photons are generated due to the radiative recombination of excitons bound to neutral Cl atoms in ZnSe QW and the energy of the emitted photon can be tuned from about 2.85 down to 2.82 eV with ZnSe well width increase from 2.7 to 4.7 nm. Following the developed advanced technology we fabricate NPs with a diameter of about 250 nm using a combination of dry and wet-chemical etching of epitaxially grown ZnSe/ZnMgSe QW well structures. The remaining resist mask serves as a spherical- or cylindrical-shaped solid immersion lens on top of NPs and leads to the emission intensity enhancement by up to an order of magnitude in comparison to the pillars without any lenses. NPs with spherical-shaped lenses show the highest emission intensity values. The clear photon-antibunching effect is confirmed by the measured value of the second-order correlation function at a zero time delay of 0.14. The developed single-photon sources are suitable for integration into scalable photonic circuits.

physics.optics↗

arXiv2022

Circular photogalvanic effects in topological insulator/ferromagnet hybrid structures

We study laser driven spin-current effects at ferromagnet/topological-insulator interfaces by two complementary experimental approaches. The DC photocurrent is studied in ferromagnet/topological-insulator bilayers with high spatial resolution. Dynamic interface currents are explored via the emission of terahertz radiation emitted by these currents with high temporal resolution. From our experiments, we reveal a lateral and dynamic interaction of the ferromagnet and the topological insulator interface.

cond-mat.mes-hall↗

arXiv2020

Phase coherent transport and spin-orbit interaction in GaAs/InSb core/shell nanowires

Low-temperature magnetotransport measurements are performed on GaAs/InSb core-shell nanowires. The nanowires were self-catalyzed grown by molecular beam epitaxy. The conductance measurements as a function of back-gate voltage show an ambipolar behavior comprising an insulating range in between the transition from the p-type to the n-type region. Simulations based on a self-consistent Schrödinger--Poisson solver revealed that the ambipolar characteristics originate from a Fermi level dependent occupation of hole and electron states within the approximately circular quantum well formed in the InSb shell. By applying a perpendicular magnetic field with respect to the nanowire axis, conductance fluctuations were observed, which are used to extract the phase-coherence length. By averaging the magneto-conductance traces at different back-gate voltages, weak antilocalization features are resolved. Regular flux-periodic conductance oscillations are measured when an axial magnetic field is applied. These oscillations are attributed to closed-loop quantized states located in the InSb shell which shift their energetic position periodically with the magnetic flux. Possible reasons for experimentally observed variations in the oscillation patterns are discussed using simulation results.

cond-mat.mes-hall↗

arXiv2019

Long-lived non-equilibrium superconductivity in a non-centrosymmetric Rashba semiconductor

We report non-equilibrium magnetodynamics in the Rashba-superconductor GeTe, which lacks inversion symmetry in the bulk. We find that at low temperature the system exhibits a non-equilibrium state, which decays on time scales that exceed conventional electronic scattering times by many orders of magnitude. This reveals a non-equilibrium magnetoresponse that is asymmetric under magnetic field reversal and, strikingly, induces a non-equilibrium superconducting state distinct from the equilibrium one. We develop a model of a Rashba system where non-equilibrium configurations relax on a finite timescale which captures the qualitative features of the data. We also obtain evidence for the slow dynamics in another non-superconducting Rashba system. Our work provides novel insights into the dynamics of non-centrosymmetric superconductors and Rashba systems in general.

cond-mat.supr-con↗

arXiv2018

Observation of spin Nernst photocurrents in topological insulators

The theoretical prediction of topological insulators in 2007 triggered tremendous interest. They are of fundamental interest because of their topological twist in k-space, which comes along with unidirectional, spin-polarized surface-state currents, required for spin-optoelectronics. This property makes topological insulators on one hand perfect materials for optically generated, ultrafast spin-bunches spin-current sources for the generation of THz radiation. On the other hand, those spin-polarized surface-state currents when generated by a voltage lead to large spin Hall effects, or when generated by a temperature gradient to the thermal analogue, the spin Nernst effect. Both mutually convert charge/ heat currents into transverse spin currents leading to spin accumulations. By connecting both research fields, we show the evidence of heat-transport related spin Hall effects that can be extracted from opto-transport experiments. This heat-driven spin Nernst effect drives a transverse spin-current and affects the optical spin-orientation in the three-dimensional topological insulator. This manifests as a modification of the circular polarization-dependent photocurrent. We illuminate the detailed thermocurrent distribution, including the influence of edges and contacts, in spatially resolved current maps.

cond-mat.mes-hall↗

arXiv2017

Infrared/Terahertz Spectra of the Photogalvanic Effect in (Bi,Sb)Te based Three Dimensional Topological Insulators

We report on the systematic study of infrared/terahertz spectra of photocurrents in (Bi,Sb)Te based three dimensional topological insulators. We demonstrate that in a wide range of frequencies, ranging from fractions up to tens of terahertz, the photocurrent is caused by the linear photogalvanic effect (LPGE) excited in the surface states. The photocurrent spectra reveal that at low frequencies the LPGE emerges due to free carrier Drude-like absorption. The spectra allow to determine the room temperature carrier mobilities in the surface states despite the presents of thermally activate residual impurities in the material bulk. In a number of samples we observed an enhancement of the linear photogalvanic effect at frequencies between 30÷60 THz, which is attributed to the excitation of electrons from helical surface to bulk conduction band states. Under this condition and applying oblique incidence we also observed the circular photogalvanic effect driven by the radiation helicity.

physics.optics↗

arXiv2017

Disentangling surface and bulk transport in topological-insulator $p$-$n$ junctions

By combining $n$-type $\mathrm{Bi_2Te_3}$ and $p$-type $\mathrm{Sb_2Te_3}$ topological insulators, vertically stacked $p$-$n$ junctions can be formed, allowing to position the Fermi level into the bulk band gap and also tune between $n$- and $p$-type surface carriers. Here we use low-temperature magnetotransport measurements to probe the surface and bulk transport modes in a range of vertical $\mathrm{Bi_2Te_3/Sb_2Te_3}$ heterostructures with varying relative thicknesses of the top and bottom layers. With increasing thickness of the $\mathrm{Sb_2Te_3}$ layer we observe a change from $n$- to $p$-type behavior via a specific thickness where the Hall signal is immeasurable. Assuming that the the bulk and surface states contribute in parallel, we can calculate and reproduce the dependence of the Hall and longitudinal components of resistivity on the film thickness. This highlights the role played by the bulk conduction channels which, importantly, cannot be probed using surface sensitive spectroscopic techniques. Our calculations are then buttressed by a semi-classical Boltzmann transport theory which rigorously shows the vanishing of the Hall signal. Our results provide crucial experimental and theoretical insights into the relative roles of the surface and bulk in the vertical topological $p$-$n$ junctions.

cond-mat.mes-hall↗

arXiv2017

Signatures of interaction-induced helical gaps in nanowire quantum point contacts

Spin-momentum locking in a semiconductor device with strong spin-orbit coupling (SOC) is a fundamental goal of nanoscale spintronics and an important prerequisite for the formation of Majorana bound states. Such a helical state is predicted in one-dimensional (1D) nanowires subject to strong Rashba SOC and spin-mixing, its hallmark being a characteristic reentrant behaviour in the conductance. Here, we report the first direct experimental observations of the reentrant conductance feature, which reveals the formation of a helical liquid, in the lowest 1D subband of an InAs nanowire. Surprisingly, the feature is very prominent also in the absence of magnetic fields. This behaviour suggests that exchange interaction exhibits substantial impact on transport in our device. We attribute the opening of the pseudogap to spin-flipping two-particle backscattering. The all-electric origin of the ideal helical transport bears momentous implications for topological quantum computing.

cond-mat.mes-hall↗

arXiv2016

Growth, characterization, and transport properties of ternary (Bi1-xSbx)2Te3 topological insulator layers

Ternary (Bi1-xSbx)2Te3 films with an Sb content between 0 and 100% were deposited on a Si(111) substrate by means of molecular beam epitaxy. X-ray diffraction measurements confirm single crystal growth in all cases. The Sb content is determined by X-ray photoelectron spectroscopy. Consistent values of the Sb content are obtained from Raman spectroscopy. Scanning Raman spectroscopy reveals that the (Bi1-xSbx)2Te3 layers with an intermediate Sb content show spatial composition inhomogeneities. The observed spectra broadening in angular-resolved photoemission spectroscopy (ARPES) is also attributed to this phenomena. Upon increasing the Sb content from x=0 to 1 the ARPES measurements show a shift of the Fermi level from the conduction band to the valence band. This shift is also confirmed by corresponding magnetotransport measurements where the conductance changes from n- to p-type. In this transition region, an increase of the resistivity is found, indicating a location of the Fermi level within the band gap region. More detailed measurements in the transition region reveals that the transport takes place in two independent channels. By means of a gate electrode the transport can be changed from n- to p-type, thus allowing a tuning of the Fermi level within the topologically protected surface states.

cond-mat.mtrl-sci↗

arXiv2015

Photon Drag Effect in (Bi$_{1-x}$Sb$_{x}$)$_{2}$Te$_{3}$ Three Dimensional Topological Insulators

We report on the observation of a terahertz radiation induced photon drag effect in epitaxially grown $n$- and $p$-type (Bi$_{1-x}$Sb$_{x}$)$_{2}$Te$_{3}$ three dimensional topological insulators with different antimony concentrations $x$ varying from 0 to 1. We demonstrate that the excitation with polarized terahertz radiation results in a $dc$ electric photocurrent. While at normal incidence a current arises due to the photogalvanic effect in the surface states, at oblique incidence it is outweighed by the trigonal photon drag effect. The developed microscopic model and theory show that the photon drag photocurrent is due to the dynamical momentum alignment by time and space dependent radiation electric field and implies the radiation induced asymmetric scattering in the electron momentum space.

cond-mat.mes-hall↗

arXiv2015

Coherent ultrafast spin-dynamics probed in three dimensional topological insulators

Topological insulators are candidates to open up a novel route in spin based electronics. Different to traditional ferromagnetic materials, where the carrier spin-polarization and magnetization are based on the exchange interaction, the spin properties in topological insulators are based on the coupling of spin- and orbit interaction connected to its momentum. Specific ways to control the spin-polarization with light have been demonstrated: the energy momentum landscape of the Dirac cone provides spin-momentum locking of the charge current and its spin. The directionality of spin and momentum, as well as control with light has been demonstrated. Here we demonstrate a coherent femtosecond control of spin-polarization for states in the valence band at around the Dirac cone.

cond-mat.mes-hall↗

arXiv2014

Room temperature high frequency transport of Dirac fermions in epitaxially grown Sb_2Te_3 based topological insulators

We report on the observation of photogalvanic effects in epitaxially grown Sb_2Te_3 three-dimensional (3D) topological insulators (TI). We show that asymmetric scattering of Dirac electrons driven back and forth by the terahertz electric field results in a dc electric current. Due to the "symmetry filtration" the dc current is generated in the surface electrons only and provides an opto-electronic access to probe the electric transport in TI, surface domains orientation and details of electron scattering even in 3D TI at room temperature where conventional surface electron transport is usually hindered by the high carrier density in the bulk.

cond-mat.mes-hall↗

arXiv2012

On the nature of the spin polarization limit in the warped Dirac cone of the Bi2Te3

The magnitude of electron spin polarization in topologically protected surface states is an important parameter with respect to spintronics applications. In order to analyze the warped spin texture in Bi$_2$Te$_3$ thin films, we combine angle- and spin-resolved photoemission experiments with theoretical \textit{ab initio} calculations. We find an \textit{in-plane} spin polarization of up to $\sim$~45\% in the topologically protected Dirac cone states near the Fermi level. The Fermi surface of the Dirac cone state is warped and shows an \textit{out-of-plane} spin polarization of $\sim$~15\%. These findings are in quantitative agreement with dedicated simulations which find electron density of the Dirac cone delocalized over the first quintuple layer with spin reversal occurring in the surface atomic layer.

cond-mat.mes-hall↗

arXiv2010

Strain determination in the Si channel above a single SiGe island inside a field effect transistor using nanobeam x-ray diffraction

SiGe islands are used to induce tensile strain in the Si channel of Field Effect Transistors to achieve larger transconductance and higher current driveabilities. We report on x-ray diffraction experiments on a single fully-processed and functional device with a TiN+Al gate stack and source, gate, and drain contacts in place. The strain fields in the Si channel were explored using an x-ray beam focused to 400 nm diameter combined with finite element simulations. A maximum in-plane tensile strain of about 1% in the Si channel was found, which is by a factor of three to four higher than achievable for dislocation-free tensile strained Si in state-of-the-art devices.

cond-mat.mes-hall↗