arXiv subjects

D. Graf

Publications and source records attributed to D. Graf.

At least 55 records · Page 3Linked to original sources

arXiv2018

Vortex excitations in the Insulating State of an Oxide Interface

In two-dimensional (2D) superconductors an insulating state can be induced either by applying a magnetic field, $H$, or by increasing disorder. Many scenarios have been put forth to explain the superconductor to insulator transition (SIT): dominating fermionic physics after the breaking of Cooper pairs, loss of phase coherence between superconducting islands embedded in a metallic or insulating matrix and localization of Cooper pairs with concomitant condensation of vortex-type excitations. The difficulty in characterizing the insulating state and its origin stems from the lack of a continuous mapping of the superconducting to insulating phase diagram in a single sample. Here we use the two-dimensional (2D) electron liquid formed at the interface between the two insulators (111) SrTiO$_3$ and LaAlO$_3$ to study the superconductor to insulator transition. This crystalline interface surprisingly exhibits very strong features previously observed only in amorphous systems. By use of electrostatic gating and magnetic fields, the sample is tuned from the metallic region, where supeconductivity is fully manifested, deep into the insulating state. Through examination of the field dependence of the sheet resistance and comparison of the response to fields in different orientations we identify a new magnetic field scale, H$_{pairing}$, where superconducting fluctuations are muted. Our findings show that vortex fluctuations excitations and Cooper pair localization are responsible for the observed SIT and that these excitations surprisingly persist deep into the insulating state.

cond-mat.supr-con↗

arXiv2018

Bulk Fermi surfaces of the Dirac Type-II Semimetallic Candidates VAl3, NbAl3 and TaAl3

We report a de Haas-van Alphen (dHvA) effect study on the Dirac type-II semimetallic candidates \emph{M}Al$_3$ (where, \emph{M} = V, Nb and Ta). The angular-dependence of their Fermi surface (FS) cross-sectional areas reveals a remarkably good agreement with first-principle calculations. Therefore, dHvA supports the existence of tilted Dirac cones with Dirac type-II nodes located at 100, 230 and 250 meV above the Fermi level $\varepsilon_F$ for VAl$_3$, NbAl$_3$ and TaAl$_3$ respectively, in agreement with the prediction of broken Lorentz invariance in these compounds. However, for all three compounds we find that the cyclotron orbits on their FSs, including an orbit nearly enclosing the Dirac type-II node, yield trivial Berry phases. We explain this $via$ an analysis of the Berry phase where the position of this orbit, relative to the Dirac node, is adjusted within the error implied by the small disagreement between our calculations and the experiments. We suggest that a very small amount of doping could displace $\varepsilon_F$ to produce topologically non-trivial orbits encircling their Dirac node(s).

cond-mat.mtrl-sci↗

arXiv2018

Absence of Dirac states in BaZnBi$_{2}$ induced by spin-orbit coupling

We report magnetotransport properties of BaZnBi$_{2}$ single crystals. Whereas electronic structure features Dirac states, such states are removed from the Fermi level by spin-orbit coupling (SOC) and consequently electronic transport is dominated by the small hole and electron pockets. Our results are consistent with three dimensional (3D) but also with quasi two dimensional (2D) portions of the Fermi surface. The spin-orbit coupling-induced gap in Dirac states is much larger when compared to isostructural SrMnBi$_{2}$. This suggests that not only long range magnetic order but also mass of the alkaline earth atoms A in ABX$_{2}$ (A = alkaine earth, B = transition metal and X=Bi/Sb) are important for the presence of low-energy states obeying the relativistic Dirac equation at the Fermi surface

cond-mat.mes-hall↗

arXiv2017

Pseudogap phase of cuprate superconductors confined by Fermi surface topology

The properties of cuprate high-temperature superconductors are largely shaped by competing phases whose nature is often a mystery. Chiefly among them is the pseudogap phase, which sets in at a doping $p^*$ that is material-dependent. What determines $p^*$ is currently an open question. Here we show that the pseudogap cannot open on an electron-like Fermi surface, and can only exist below the doping $p_{FS}$ at which the large Fermi surface goes from hole-like to electron-like, so that $p^*$ $\leq$ $p_{FS}$. We derive this result from high-magnetic-field transport measurements in La$_{1.6-x}$Nd$_{0.4}$Sr$_x$CuO$_4$ under pressure, which reveal a large and unexpected shift of $p^*$ with pressure, driven by a corresponding shift in $p_{FS}$. This necessary condition for pseudogap formation, imposed by details of the Fermi surface, is a strong constraint for theories of the pseudogap phase. Our finding that $p^*$ can be tuned with a modest pressure opens a new route for experimental studies of the pseudogap.

cond-mat.supr-con↗

arXiv2017

Converting topological insulators into topological metals within the tetradymite family

We report the electronic band structures and concomitant Fermi surfaces for a family of exfoliable tetradymite compounds with the formula $T_2$$Ch_2$$Pn$, obtained as a modification to the well-known topological insulator binaries Bi$_2$(Se,Te)$_3$ by replacing one chalcogen ($Ch$) with a pnictogen ($Pn$) and Bi with the tetravalent transition metals $T$ $=$ Ti, Zr, or Hf. This imbalances the electron count and results in layered metals characterized by relatively high carrier mobilities and bulk two-dimensional Fermi surfaces whose topography is well-described by first principles calculations. Intriguingly, slab electronic structure calculations predict Dirac-like surface states. In contrast to Bi$_2$Se$_3$, where the surface Dirac bands are at the $Γ-$point, for (Zr,Hf)$_2$Te$_2$(P,As) there are Dirac cones of strong topological character around both the $\bar Γ$- and $\bar {M}$-points which are above and below the Fermi energy, respectively. For Ti$_2$Te$_2$P the surface state is predicted to exist only around the $\bar {M}$-point. In agreement with these predictions, the surface states that are located below the Fermi energy are observed by angle resolved photoemission spectroscopy measurements, revealing that they coexist with the bulk metallic state. Thus, this family of materials provides a foundation upon which to develop novel phenomena that exploit both the bulk and surface states (e.g., topological superconductivity).

cond-mat.str-el↗

arXiv2017

Weak antilocalization effect due to topological surface states in Bi$_2$Se$_{2.1}$Te$_{0.9}$

We have investigated the weak antilocalization (WAL) effect in the p-type Bi$_2$Se$_{2.1}$Te$_{0.9}$ topological system. The magnetoconductance shows a cusp-like feature at low magnetic fields, indicating the presence of the WAL effect. The WAL curves measured at different tilt angles merge together when they are plotted as a function of the normal field components, showing that surface states dominate the magnetoconductance in the Bi$_2$Se$_{2.1}$Te$_{0.9}$ crystal. We have calculated magnetoconductance per conduction channel and applied the Hikami-Larkin-Nagaoka formula to determine the physical parameters that characterize the WAL effect. The number of conduction channels and the phase coherence length do not change with temperature up to T=5 K. In addition, the sample shows a large positive magnetoresistance that reaches 1900% under a magnetic field of 35 T at T=0.33K with no sign of saturation. The magnetoresistance value decreases with both increasing temperature and tilt angle of the sample surface with respect to the magnetic field. The large magnetoresistance of topological insulators can be utilized in future technology such as sensors and memory devices.

cond-mat.str-el↗

arXiv2017

The new versatile general purpose surface-muon instrument (GPS) based on silicon photomultipliers for $μ$SR measurements on a continuous-wave beam

We report on the design and commissioning of a new spectrometer for muon-spin relaxation/rotation studies installed at the Swiss Muon Source (S$μ$S) of the Paul Scherrer Institute (PSI, Switzerland). This new instrument is essentially a new design and replaces the old general-purpose surface-muon instrument (GPS) which has been for long the workhorse of the $μ$SR user facility at PSI. By making use of muon and positron detectors made of plastic scintillators read out by silicon photomultipliers (SiPMs), a time resolution of the complete instrument of about 160 ps (standard deviation) could be achieved. In addition, the absence of light guides, which are needed in traditionally built $μ$SR instrument to deliver the scintillation light to photomultiplier tubes located outside magnetic fields applied, allowed us to design a compact instrument with a detector set covering an increased solid angle compared to the old GPS.

physics.ins-det↗

arXiv2017

Large magnetoresistance and Fermi surface study of Sb$_2$Se$_2$Te single crystal

We have studied the magnetotransport properties of a Sb$_2$Se$_2$Te single crystal. Magnetoresistance (MR) is maximum when the magnetic field is perpendicular to the sample surface and reaches to a value of 1100\% at $B$=31 T with no sign of saturation. MR shows Shubnikov de Haas (SdH) oscillations above $B$=15 T. The frequency spectrum of SdH oscillations consists of three distinct peaks at $α$=32 T, $β$=80 T and $γ$=117 T indicating the presence of three Fermi surface pockets. Among these frequencies, $β$ is the prominent peak in the frequency spectrum of SdH oscillations measured at different tilt angles of the sample with respect to the magnetic field. From the angle dependence $β$ and Berry phase calculations, we have confirmed the trivial topology of the $β$-pocket. The cyclotron masses of charge carriers, obtained by using the Lifshitz-Kosevich formula, are found to be $m^{*}_β=0.16m_o$ and $m^{*}_γ=0.63m_o$ for the $β$ and $γ$ bands respectively. Large MR of Sb$_2$Se$_2$Te is suitable for utilization in electronic instruments such as a computer hard disc, high field magnetic sensors, and memory devices.

cond-mat.mes-hall↗

arXiv2017

Large magnetoresistance in type-II Weyl semimetal WP$_2$

We report magnetotransport study on type-II Weyl semimetal WP$_2$ single crystals. Magnetoresistance (MR) exhibits a nonsaturating $H^{n}$ field dependence (14,300\% at 2 K and 9 T) whereas systematic violation of Kohler's rule was observed. Quantum oscillations reveal a complex multiband electronic structure. The cyclotron effective mass close to the mass of free electron m$_e$ was observed in quantum oscillations along $b$-axis, while reduced effective mass of about 0.5$m_e$ was observed in $a$-axis quantum oscillations, suggesting Fermi surface anisotropy. Temperature dependence of the resistivity shows a large upturn that cannot be explained by the multi-band magnetoresistance of conventional metals. Even though crystal structure of WP$_{2}$ is not layered as in transition metal dichalcogenides, quantum oscillations suggest partial two-dimensional character.

cond-mat.mtrl-sci↗

arXiv2017

A magnetic topological semimetal Sr1-yMn1-zSb2 (y, z< 0.1)

Weyl (WSMs) evolve from Dirac semimetals in the presence of broken time-reversal symmetry (TRS) or space-inversion symmetry. The WSM phases in TaAs-class materials and photonic crystals are due to the loss of space-inversion symmetry. For TRS-breaking WSMs, despite numerous theoretical and experimental efforts, few examples have been reported. In this Article, we report a new type of magnetic semimetal Sr1-yMn1-zSb2 (y,z<0.1) with nearly massless relativistic fermion behaviour (m*=0.04-0.05m0, where m0 is the free electron mass). This material exhibits a ferromagnetic order for 304K < T < 565K, but a canted antiferromagnetic order with a ferromagnetic component for T < 304K. The combination of relativistic fermion behaviour and ferromagnetism in Sr1-yMn1-zSb2 offers a rare opportunity to investigate the interplay between relativistic fermions and spontaneous TRS breaking.

cond-mat.mtrl-sci↗

arXiv2017

Magnetotransport properties of MoP$_2$

We report magnetotransport and de Haas-van Alphen (dHvA) effect studies on MoP$_2$ single crystals, predicted to be type-2 Weyl semimetal with four pairs of robust Weyl points located below the Fermi level and long Fermi arcs. The temperature dependence of resistivity shows a peak before saturation, which does not move with magnetic field. Large nonsaturating magnetoresistance (MR) was observed, and the field dependence of MR exhibits a crossover from semicalssical weak-field $B^2$ dependence to the high-field linear-field dependence, indicating the presence of Dirac linear energy dispersion. In addition, systematic violation of Kohler's rule was observed, consistent with multiband electronic transport. Strong spin-orbit coupling (SOC) splitting has an effect on dHvA measurements whereas the angular-dependent dHvA orbit frequencies agree well with the calculated Fermi surface. The cyclotron effective mass $\sim$ 1.6$m_e$ indicates the bands might be trivial, possibly since the Weyl points are located below the Fermi level. Interestingly, quasi-two dimensional(2D) band structure is observed even though the crystal structure of MoP$_2$ is not layered.

cond-mat.mtrl-sci↗

arXiv2017

Evolution of the Fermi surface of BiTeCl with pressure

We report measurements of Shubnikov-de Haas oscillations in the giant Rashba semiconductor BiTeCl under applied pressures up to ~2.5 GPa. We observe two distinct oscillation frequencies, corresponding to the Rashba-split inner and outer Fermi surfaces. BiTeCl has a conduction band bottom that is split into two sub-bands due to the strong Rashba coupling, resulting in two spin-polarized conduction bands as well as a Dirac point. Our results suggest that the chemical potential lies above this Dirac point, giving rise to two Fermi surfaces. We use a simple two-band model to understand the pressure dependence of our sample parameters. Comparing our results on BiTeCl to previous results on BiTeI, we observe similar trends in both the chemical potential and the Rashba splitting with pressure.

cond-mat.mtrl-sci↗

arXiv2017

Possible devil's staircase in the Kondo lattice CeSbSe

The temperature ($T$) - magnetic field ($H$) phase diagram for the tetragonal layered compound CeSbSe, is determined from magnetization, specific heat, and electrical resistivity measurements. This system exhibits complex magnetic ordering at $T_{\rm{M}}$ $=$ 3 K and the application of a magnetic field results in a cascade of magnetically ordered states for $H$ $\lesssim$ 1.8 T which are characterized by fractional integer size steps: i.e., a possible Devil's staircase is observed. Electrical transport measurements show a weak temperature dependence and large residual resistivity which suggest a small charge carrier density and strong scattering from the $f$-moments. These features reveal Kondo lattice behavior where the $f$-moments are incompletely screened, resulting in a fine balanced magnetic interaction between different Ce neighbors that is mediated by the RKKY interaction. This produces the nearly degenerate magnetically ordered states that are accessed under an applied magnetic field.

cond-mat.str-el↗

arXiv2017

Electronic Landscape of Ce-based Intermetallics: CeCu$_2$Si$_2$ at an Extreme

CeCu$_2$Si$_2$ is an exemplary correlated electron metal that features two domes of unconventional superconductivity in its temperature-pressure phase diagram. The first dome surrounds an antiferromagnetic quantum critical point, whereas the more exotic second dome may span the termination point of a line of $f$-electron valence transitions. This behavior has received intense interest, but what has been missing are ways to access the high pressure behavior under milder conditions. Here we study Si $\rightarrow$ P chemical substitution, which compresses the unit cell volume but simultaneously weakens the hybridization between the $f$- and conduction electron states and encourages complex magnetism. At concentrations that show magnetism, applied pressure suppresses the magnetic ordering temperature and superconductivity is recovered for samples with low disorder. These results reveal that the electronic behavior in this system is controlled by a nontrivial combination of effects from unit cell volume and electronic shell filling. Guided by this topography we discuss prospects for uncovering a valence fluctuation quantum phase transition in the broader family of Ce-based ThCr$_2$Si$_2$-type materials through chemical substitution.

cond-mat.str-el↗

arXiv2017

Electronic Structure and Magnetism in the Layered Triangular Lattice Compound CeAuAl$_4$Ge$_2$

Results are reported for the $f$-electron intermetallic CeAuAl$_4$Ge$_2$, where the atomic arrangement of the cerium ions creates the conditions for geometric frustration. Despite this, magnetic susceptibility measurements reveal that the low temperature magnetic exchange interaction is weak, resulting in marginally frustrated behavior and ordering near $T_{\rm{M}}$ $\approx$ 1.4 K. This occurs within a metallic Kondo lattice, where electrical resistivity and heat capacity measurements show that the Kondo-driven electronic correlations are negligible. Quantum oscillations are detected in ac-magnetic susceptibility measurements and uncover small charge carrier effective masses. Electronic structure calculations reveal that when the experimentally observed antiferromagnetic exchange interaction and the on-$f$-site Coulomb repulsion (Hubbard) U are considered, the $f$-electron bands move away from the Fermi level, resulting in electronic behavior that is dominated by the $s$-, $p$-, and $d$- bands, which are all characterized by light electron masses. Thus, CeAuAl$_4$Ge$_2$ provides a starting point for investigating geometric magnetic frustration in a cerium lattice without strong Kondo hybridization, where calculations provide useful guidance.

cond-mat.mtrl-sci↗

arXiv2017

Anisotropy of the Seebeck Coefficient in the Cuprate Superconductor YBa$_{2}$Cu$_{3}$O$_{y}$: Fermi-Surface Reconstruction by Bidirectional Charge Order

The Seebeck coefficient $S$ of the cuprate YBa$_{2}$Cu$_{3}$O$_{y}$ was measured in magnetic fields large enough to suppress superconductivity, at hole dopings $p = 0.11$ and $p = 0.12$, for heat currents along the $a$ and $b$ directions of the orthorhombic crystal structure. For both directions, $S/T$ decreases and becomes negative at low temperature, a signature that the Fermi surface undergoes a reconstruction due to broken translational symmetry. Above a clear threshold field, a strong new feature appears in $S_{\rm b}$, for conduction along the $b$ axis only. We attribute this feature to the onset of 3D-coherent unidirectional charge-density-wave modulations seen by x-ray diffraction, also along the $b$ axis only. Because these modulations have a sharp onset temperature well below the temperature where $S/T$ starts to drop towards negative values, we infer that they are not the cause of Fermi-surface reconstruction. Instead, the reconstruction must be caused by the quasi-2D bidirectional modulations that develop at significantly higher temperature.

cond-mat.supr-con↗

arXiv2017

Extremely large non-saturating magnetoresistance and ultrahigh mobility due to topological surface states in metallic Bi2Te3 topological insulator

Weak antilocalization (WAL) effects in Bi2Te3 single crystals have been investigated at high and low bulk charge carrier concentrations. At low charge carrier density the WAL curves scale with the normal component of the magnetic field, demonstrating the dominance of topological surface states in magnetoconductivity. At high charge carrier density the WAL curves scale with neither the applied field nor its normal component, implying a mixture of bulk and surface conduction. WAL due to topological surface states shows no dependence on the nature (electrons or holes) of the bulk charge carriers. The observations of an extremely large, non-saturating magnetoresistance, and ultrahigh mobility in the samples with lower carrier density further support the presence of surface states. The physical parameters characterizing the WAL effects are calculated using the Hikami-Larkin-Nagaoka formula. At high charge carrier concentrations, there is a greater number of conduction channels and a decrease in the phase coherence length compared to low charge carrier concentrations. The extremely large magnetoresistance and high mobility of topological insulators have great technological value and can be exploited in magneto-electric sensors and memory devices.

cond-mat.str-el↗

arXiv2017

Quantum oscillation studies of topological semimetal candidate ZrGeM (M=S, Se, Te)

The WHM - type materials (W=Zr/Hf/La, H=Si/Ge/Sn/Sb, M=O/S/Se/Te) have been predicted to be a large pool of topological materials. These materials allow for fine tuning of spin-orbit coupling, lattice constant and structural dimensionality for various combinations of W, H and M elements, thus providing an excellent platform to study how these parameters' tuning affect topological semimetal state. In this work, we report the high field quantum oscillation studies on ZrGeM (M=S, Se, and Te). We have found the first experimental evidence for their theoretically-predicted topological semimetal states. From the angular dependence of quantum oscillation frequency, we have also studied the Fermi surface topologies of these materials. Moreover, we have compared Dirac electron behavior between the ZrGeM and ZrSiM systems, which reveals deep insights to the tuning of Dirac state by spin-orbit coupling and lattice constants in the WHM systems.

cond-mat.mtrl-sci↗