arXiv subjects

D. Graf

Publications and source records attributed to D. Graf.

105 records · Page 6Linked to original sources

arXiv2007

Raman imaging and electronic properties of graphene

Graphite is a well-studied material with known electronic and optical properties. Graphene, on the other hand, which is just one layer of carbon atoms arranged in a hexagonal lattice, has been studied theoretically for quite some time but has only recently become accessible for experiments. Here we demonstrate how single- and multi-layer graphene can be unambiguously identified using Raman scattering. Furthermore, we use a scanning Raman set-up to image few-layer graphene flakes of various heights. In transport experiments we measure weak localization and conductance fluctuations in a graphene flake of about 7 monolayer thickness. We obtain a phase-coherence length of about 2 $μ$m at a temperature of 2 K. Furthermore we investigate the conductivity through single-layer graphene flakes and the tuning of electron and hole densities via a back gate.

cond-mat.mes-hall↗

arXiv2007

Local gating of a graphene Hall bar by graphene side gates

We have investigated the magnetotransport properties of a single-layer graphene Hall bar with additional graphene side gates. The side gating in the absence of a magnetic field can be modeled by considering two parallel conducting channels within the Hall bar. This results in an average penetration depth of the side gate created field of approx. 90 nm. The side gates are also effective in the quantum Hall regime, and allow to modify the longitudinal and Hall resistances.

cond-mat.mes-hall↗

arXiv2007

Phase coherent transport in a side-gated mesoscopic graphite wire

We investigate the magnetotransport properties of a thin graphite wire resting on a silicon oxide substrate. The electric field effect is demonstrated with back and side gate electrodes. We study the conductance fluctuations as a function of gate voltage, magnetic field and temperature. The phase coherence length extracted from weak localization is larger than the wire width even at the lowest carrier densities making the system effectively one-dimensional. We find that the phase coherence length increases linearly with the conductivity suggesting that at 1.7 K dephasing originates mainly from electron-electron interactions.

cond-mat.mes-hall↗

arXiv2006

Spatially Resolved Raman Spectroscopy of Single- and Few-Layer Graphene

We present Raman spectroscopy measurements on single- and few-layer graphene flakes. Using a scanning confocal approach we collect spectral data with spatial resolution, which allows us to directly compare Raman images with scanning force micrographs. Single-layer graphene can be distinguished from double- and few-layer by the width of the D' line: the single peak for single-layer graphene splits into different peaks for the double-layer. These findings are explained using the double-resonant Raman model based on ab-initio calculations of the electronic structure and of the phonon dispersion. We investigate the D line intensity and find no defects within the flake. A finite D line response originating from the edges can be attributed either to defects or to the breakdown of translational symmetry.

cond-mat.mes-hall↗

arXiv2006

Local oxidation of Ga[Al]As heterostructures with modulated tip-sample voltages

Nanolithography based on local oxidation with a scanning force microscope has been performed on an undoped GaAs wafer and a Ga[Al]As heterostructure with an undoped GaAs cap layer and a shallow two-dimensional electron gas. The oxide growth and the resulting electronic properties of the patterned structures are compared for constant and modulated voltage applied to the conductive tip of the scanning force microscope. All the lithography has been performed in non-contact mode. Modulating the applied voltage enhances the aspect ratio of the oxide lines, which significantly strengthens the insulating properties of the lines on GaAs. In addition, the oxidation process is found to be more reliable and reproducible. Using this technique, a quantum point contact and a quantum wire have been defined and the electronic stability, the confinement potential and the electrical tunability are demonstrated to be similar to the oxidation with constant voltage.

cond-mat.mes-hall↗

arXiv2005

Magnetic Field Dependence of CDW Phases in Per2M(mnt)2 (M=Pt, Au)

Recently the authors discovered that the suppression of the charge density wave (CDW) ground states by high magnetic fields in the organic conductor series Per2M(mnt)2 is followed by additional high field, CDW-like phases. The purpose of this presentation is to review these compounds, to consider the relevant parameters of the materials that describe the manner in which the CDW ground state may undergo new field induced changes above the Pauli limit.

cond-mat.stat-mech↗

arXiv2005

Magnetic Field Dependent Behavior of the CDW ground state in Per2M(mnt)2 (M = Au, Pt)

The Per2M(mnt)2 class of organic conductors exhibit a charge density wave (CDW) ground state below about 12 K, which may be suppressed in magnetic fields of order 20 to 30 T. However, for both cases of counter ion M(mnt)2 species studied (M = Au (zero spin) and M = Pt (spin 1/2)), new high field ground states evolve for further increases in magnetic field. We report recent investigations where thermopower, Hall effect, high pressure and additional transport measurements have been carried out to explore these new high field phases.

cond-mat.str-el↗

arXiv2004

Magnetization, thermoelectric, and pressure studies of the magnetic field-induced metal to insulator transition in tau phase organic conductors

We have investigated the magnetic field-induced metal-insulator transition in the tau-phase organic conductors, which occurs in fields above 35 T, and below 14 K, by magnetization, thermoelectric, and pressure dependent transport methods. Our results show that the transition is a bulk thermodynamic process where a magnetic field-dependent gap opens upon entry into the insulating state. We argue that the transition involves a magnetic field-induced change in the electronic structure.

cond-mat.str-el↗

arXiv2004

Multi-terminal transport through a quantum dot in the Coulomb blockade regime

Three terminal tunnelling experiments on quantum dots in the Coulomb blockade regime allow a quantitative determination of the coupling strength of individual quantum states to the leads. Exploiting this insight we have observed independent fluctuations of the coupling strengths as a function of electron number and magnetic field due to changes in the shape of the wave function in the dot. Such a detailed understanding and control of the dot-lead coupling can be extended to more complex systems such as coupled dots, and is essential for building functional quantum electronic systems.

cond-mat.mes-hall↗

arXiv2003

High magnetic field induced charge density wave states in a quasi-one dimensional organic conductor

We have measured the high field magnetoresistence and magnetization of quasi-one- dimensional (Q1D) organic conductor (Per)2Pt(mnt)2 (where Per = perylene and mnt = maleonitriledithiolate), which has a charge density wave (CDW) ground state at zero magnetic field below 8 K. We find that the CDW ground state is suppressed with moderate magnetic fields of order 20 T, as expected from a mean field theory treatment of Pauli effects[W. Dieterich and P. Fulde, Z. Physik 265, 239 - 243 (1973)]. At higher magnetic fields, a new, density wave state with sub-phases is observed in the range 20 to 50 T, which is reminiscent of the cascade of field induced, quantized, spin density wave phases (FISDW) observed in the Bechgaard salts. The new density wave state, which we tenatively identify as a field induced charge density wave state (FICDW), is re-entrant to a low resistance state at even higher fields, of order 50 T and above. Unlike the FISDW ground state, the FICDW state is only weakly orbital, and appears for all directions of magnetic field. Our findings are substantiated by electrical resistivity, magnetization, thermoelectric, and Hall measurements. We discuss our results in light of theoretical work involving magnetic field dependent Q1D CDW ground states in high magnetic fields [D. Zanchi, A. Bjelis, and G. Montambaux, Phys. Rev. B 53, (1996)1240; A. Lebed, JETP Lett. 78,138(2003)].

cond-mat.str-el↗

arXiv2003

Suppression of a charge density wave ground state in high magnetic fields: spin and orbital mechanisms

The charge density wave (CDW) transition temperature in the quasi-one dimensional (Q1D) organic material of (Per)$_2$Au(mnt)$_2$ is relatively low (TCDW = 12 K). Hence in a mean field BCS model, the CDW state should be completely suppressed in magnetic fields of order 30 - 40 T. To explore this possibility, the magnetoresistance of (Per)$_2$Au(mnt)$_2$ was investigated in magnetic fields to 45 T for 0.5 K < T < 12 K. For fields directed along the Q1D molecular stacking direction, TCDW decreases with field, terminating at about ~ 37 T for temperatures approaching zero. Results for this field orientation are in general agreement with theoretical predictions, including the field dependence of the magnetoresistance and the energy gap, $Δ_{CDW}$. However, for fields tilted away from the stacking direction, orbital effects arise above 15 T that may be related to the return of un-nested Fermi surface sections that develop as the CDW state is suppressed. These findings are consistent with expectations that quasi-one dimensional metallic behavior will return outside the CDW phase boundary.

cond-mat.str-el↗

arXiv2002

High magnetic field-induced insulating phase in an organic conductor

We report electrical transport, skin depth, and magnetocaloric measurements in the tau-series of organic conductors at very high magnetic fields. Above 36 T these materials show a magnetic field induced first order phase transition from a metallic to an insulating state. The transition, which is a bulk thermodynamic phenomenon, does not follow the conventional prescription for field induced phase transitions in organic conductors.

cond-mat↗

arXiv2002

Disorder-driven magnetic field-dependent phases in an organic conductor

We report inter-plane ($R_{zz}$) electrical transport measurements in the \tp series of organic conductors at very high magnetic fields. In the field range between 36 and 60 T $R_{zz}$ shows a very hysteretic first order phase transition from metallic to an insulating state. This transition does not affect the Shubnikov-de-Haas oscillations associated with the two-dimensional (2D) Fermi surface. We argue that this transition originates from inter-plane disorder which gives rise to incoherent transport along the least conducting axis. We conclude that this system becomes a strictly 2D Fermi-liquid at high magnetic fields.

cond-mat.str-el↗

arXiv2000

Magnetic field-dependent interplay between incoherent and Fermi liquid transport mechanisms in low-dimensional tau phase organic conductors

We present an electrical transport study of the 2-dimensional (2D) organic conductor tau-(P-(S,S)-DMEDT-TTF)_2(AuBr)_2(AuBr_2)_y (y = 0.75) at low temperatures and high magnetic fields. The inter-plane resistivity rho_zz increases with decreasing temperature, with the exception of a slight anomaly at 12 K. Under a magnetic field B, both rho_zz and the in-plane resistivity plane rho_xx show a pronounced negative and hysteretic magnetoresistance with Shubnikov de Haas (SdH)oscillations being observed in some (high quality)samples above 15 T. Contrary to the predicted single, star-shaped, closed orbit Fermi surface from band structure calculations (with an expected approximate area of 12.5% of A_FBZ), two fundamental frequencies F_l and F_h are detected in the SdH signal. These orbits correspond to 2.4% and 6.8% of the area of the first Brillouin zone(A_FBZ), with effective masses F_l = 4.0 +/- 0.5 and F_h = 7.3 +/- 0.1. The angular dependence, in tilted magnetic fields of F_l and F_h, reveals the 2D character of the FS and Angular dependent magnetoresistance (AMRO) further suggests a FS which is strictly 2-D where the inter-plane hopping t_c is virtually absent or incoherent. The Hall constant R_xy is field independent, and the Hall mobility increases by a factor of 3 under moderate magnetic fields. Our observations suggest a unique physical situation where a stable 2D Fermi liquid state in the molecular layers are incoherently coupled along the least conducting direction. The magnetic field not only reduces the inelastic scattering between the 2D metallic layers, but it also reveals the incoherent nature of interplane transport in the AMRO spectrum. The apparent ferromagnetism of the hysteretic magnetoresistance remains an unsolved problem.

cond-mat.str-el↗

arXiv2000

Shubnikov-de Haas effect and Yamaji oscillations in the antiferromagnetically ordered organic superconductor k-(BETS)2FeBr4: A Fermiology study

Shubnikov-De Haas effect (SdH) effect and angular dependent magnetoresistance oscillations (AMRO) were observed in the organic superconductor: $κ$-(BETS)$_2$FeBr$_4$. In contrast to its isostructural compound $κ-(BETS)$_2$FeCl$_4$, SdH oscillations, for fields perpendicular to the conducting planes, reveal three Fermi Surface (FS) closed orbits $α$, $β$, and $γ$ whose cross sectional areas are 19.8 %, 99.9 %, and 2.4 % of the first Brillouin zone, respectively. The conduction electron effective masses were found to be: $μ_α = (4.7 \pm 0.2)$ m$_e$, $μ_β = (8.0 \pm 1.0)$ m$_e$, and $μ_γ = (2.0 \pm 0.2)$ m$_e$. The observation of a $γ$ orbit is not expected from band structure calculations, $μ_β$ is among the heaviest masses ever reported for an organic conductor. The observed Yamaji-like AMRO indicates a 2-D closed FS, warped along the $k_z$ direction.

cond-mat.str-el↗