arXiv subjects

D. I. Zainutdinov

Publications and source records attributed to D. I. Zainutdinov.

3 recordsLinked to original sources

arXiv2026

Swift heavy ion track formation in SiC films under high-temperature irradiation

It is known that swift heavy ion (SHI) irradiation at temperatures below $\sim$1000 K does not cause structural damage in the bulk SiC. However, the effect of the SiC film thickness on the formation and structure of SHI tracks over a wide range of irradiation temperatures remains unexplored. To address this gap, we used a model sensitive to irradiation temperature that describes all stages of ion track formation: from material excitation, considering the emission of excited electrons from the film surface (MC code TREKIS-3), to the reaction of the material's atomic system to the excitation (classical molecular dynamics). We observed the appearance of two different types of nanostructures on the surface of SiC films with thicknesses ranging from 10 nm to 100 nm after impacts of 710 MeV Bi ions: craters and hillocks. The transition from hillocks to craters occurs with the irradiation temperature. The transition temperature increases with the film thickness, tending to $\approx 1534 \pm 100$ K for the surface of bulk SiC.

cond-mat.mtrl-sci↗

arXiv2025

High-temperature threshold of damage of SiC by swift heavy ions

At ambient conditions, SiC is known to be resistant to irradiation with swift heavy ions (SHI) decelerating in the electronic stopping regime. However, there is no experimental data on the SiC irradiation at elevated temperatures. To investigate this problem, we evaluate the stability of SiC to SHI impacts at high temperatures up to 2200 K. We apply the combination of the Monte-Carlo code TREKIS-3, describing excitation of the electronic and atomic systems using temperature-dependent scattering cross-sections, with molecular-dynamic modeling of the lattice response to the excitation. We demonstrate that increasing irradiation temperature increases the energy transferred to the atomic lattice from the excited electronic system. This material heating leads to formation of a stable nanometric damaged core along the trajectory of 710 MeV Bi ion when the irradiation temperature overcomes the threshold of ~1800 K. In this case, a chain of nanometric voids along the ion trajectory forms due to the mass transport from the track core by edge dislocations. Voids of larger sizes appear at higher irradiation temperatures. At lower irradiation temperatures, the damaged regions recrystallize completely within ~100 ps after the ion passage.

cond-mat.mtrl-sci↗

arXiv2024

Non-ionizing cross section of electron scattering on atoms in matter accounting for dynamical screening effect

We present a model of non-ionizing scattering of electrons on atomic ensemble in matter, applicable in a wide electron energy range from ~eV up to relativistic ones. The approach based on the dynamic-structure factor formalism considers collective response of the atomic and electronic systems of a target. It accounts for dynamical screening of atomic nuclei in matter by valence (collective) and core-shell electrons during the scattering events, dependent on the incident electron velocity. The proposed formalism for the cross section enables us to describe in a unified manner the electron scattering on the ensemble of isolated atomic nuclei at high incident electron energies, reducing to the scattering on phonons with decrease of the energy. Our model can be used, e.g., in transport Monte Carlo codes to describe the energy exchange between excited electrons and atomic ensemble in matter. An example of swift heavy ion track formation in quartz simulated with the proposed cross section shows a reasonable agreement with the experiment validating the model.

cond-mat.other↗