arXiv subjects

D. K. Christen

Publications and source records attributed to D. K. Christen.

26 records · Page 2Linked to original sources

arXiv2001

Ni-Cr textured substrates with reduced ferromagnetism for coated conductor applications

A series of biaxially textured Ni(1-x)Cr(x) materials, with compositions x = 0, 7, 9, 11, and 13 at % Cr, have been studied for use as substrate materials in coated conductor applications with high temperature superconductors. The magnetic properties were investigated, including the hysteretic loss in a Ni-7 at % Cr sample that was controllably deformed; for comparison, the loss was also measured in a similarly deformed pure Ni substrate. Complementary X-ray diffraction studies show that thermo-mechanical processing produces nearly complete {100}<100> cube texturing, as desired for applications.

cond-mat.supr-con↗

arXiv2001

Effect of Carbon-Doping in Bulk Superconducting MgB2 Samples

Bulk superconducting samples of MgB2 were prepared by solid state reaction of stoichiometric quantities of Mg turnings and B in a sealed Ta cylinder at 890 C for 2 hours. The as-synthesized MgB2 samples had a Tc of 39 K, as defined as the onset of diamagnetism. The crystal symmetry was found to be hexagonal with lattice parameters, a=3.0856 A, and c=3.5199 A, similar to the literature values. To study the effect of carbon doping in MgB2, various C-containing samples of x varying from 0 to 1.00 in MgB2-xCx were prepared. Magnetic characterizations indicate that the Tc onset is same for pure and C-doped samples for x = 0.05, and 0.10. However, the shielding signal decreased monotonically with C content, apparently due to the presence of carbon on the grain boundaries that isolates grains and prevents flow of supercurrents on the perimeter.

cond-mat.supr-con↗

arXiv2001

Superconducting magnesium diboride films on Silicon with Tc0 about 24K grown via vacuum annealing from stoichiometric precursors

Superconducting magnesium diboride films with Tc0 ~ 24 K and sharp transition \~ 1 K were successfully prepared on silicon substrates by pulsed laser deposition from a stoichiometric MgB2 target. Contrary to previous reports, anneals at 630 degree and a background of 2x10^(-4) torr Ar/4%H2 were performed without the requirement of Mg vapor or an Mg cap layer. This integration of superconducting MgB2 films on silicon may thus prove enabling in superconductor-semiconductor device applications. Images of surface morphology and cross-section profiles by scanning electron microscopy (SEM) show that the films have a uniform surface morphology and thickness. Energy dispersive spectroscopy (EDS) reveals these films were contaminated with oxygen, originating either from the growth environment or from sample exposure to air. The oxygen contamination may account for the low Tc for those in-situ annealed films, while the use of Si as the substrate does not result in a decrease in Tc as compared to other substrates.

cond-mat.supr-con↗

arXiv2001

Superconducting MgB(2) films via precursor post-processing approach

Superconducting MgB(2) films with Tc = 38.6 K were prepared using a precursor-deposition, ex-situ post-processing approach. Precursor films of boron, ~0.5 micrometer thick, were deposited onto Al(2)O(3) (102) substrates by e-beam evaporation; a post-anneal at 890 deg C in the presence of bulk MgB(2) and Mg metal produced highly crystalline MgB(2) films. X-ray diffraction indicated that the films exhibit some degree of c-axis alignment, but are randomly oriented in-plane. Transport current measurements of the superconducting properties show high values of the critical current density and yield an irreversibility line that exceeds that determined by magnetic measurements on bulk polycrystalline materials.

cond-mat.supr-con↗

arXiv2001

High temporal stability of supercurrents in MgB(2) materials

Fine grained polycrystalline samples of MgB(2) superconductor were synthesized from the elements to contain < 5 % of impurity phases, according to X-ray powder diffractometry. The superconductive transition was sharp with a midpoint Tc = 38.5 K. The magnetization in the vortex state was studied as a function of applied field H, temperature T, and time t. From the equilibrium magnetization, the London penetration depth was obtained. The supercurrent density J(T,H,t) in the vortex state (derived from the irreversible magnetization) decreases approximately linearly with T, in contrast to the quasi-exponential falloff in high-Tc superconductors. The current is highly stable in time, with normalized decay rates S = -d ln(J)/d ln(t) well below those in high-Tc materials. These results are compared with those of other superconductors.

cond-mat.supr-con↗

arXiv2001

Superconducting magnesium diboride films with Tc \approx 24K grown by pulsed laser deposition with in-situ anneal

Thin superconducting films of magnesium diboride (MgB2) with Tc \approx 24K were prepared on various oxide substrates by pulsed laser deposition (PLD) followed by an in-situ anneal. A systematic study of the influence of various in-situ annealing parameters shows an optimum temperature of about 600C in a background of 0.7 atm. of Ar/4%H2 for layers consisting of a mixture of magnesium and boron. Contrary to ex-situ approaches (e.g. reacting boron films with magnesium vapor at 900C), these films are processed below the decomposition temperature of MgB2. This may prove enabling in the formation of multilayers, junctions, and epitaxial films in future work. Issues related to the improvement of these films and to the possible in-situ growth of MgB2 at elevated temperature are discussed.

cond-mat.supr-con↗

arXiv2001

Critical Current Density of YBa{2}Cu{3}O{7-d} Low-Angle Grain Boundaries in Self-Field

A study has been perfomed on the superconducting critical current density J_{c} flowing across low angle grain boundaries in epitaxial thin films of YBa{2}Cu{3}O{7-d} (YBCO). The materials studied were dual grain boundary rings deposited on SrTiO{3} and containing 2, 3, 5 and 7 degree tilt boundaries. The current density in self-field was determined by magnetometric methods at temperatures from 5 K to T_c. We conclude that at the higher temperatures of coated conductor applications, there is limited potential for improving J_{c} by reducing the grain boundary angle below about 3 degrees.

cond-mat.supr-con↗

arXiv1999

Triple sign reversal of Hall effect in HgBa_{2}CaCu_{2}O_{6} thin films after heavy-ion irradiations

Triple sign reversal in the mixed-state Hall effect has been observed for the first time in ion-irradiated HgBa_{2}CaCu_{2}O_{6} thin films. The negative dip at the third sign reversal is more pronounced for higher fields, which is opposite to the case of the first sign reversal near T_c in most high-T_c superconductors. These observations can be explained by a recent prediction in which the third sign reversal is attributed to the energy derivative of the density of states and to a temperature-dependent function related to the superconducting energy gap. These contributions prominently appear in cases where the mean free path is significantly decreased, such as our case of ion-irradiated thin films.

cond-mat.supr-con↗