arXiv subjects

D. Kanjilal

Publications and source records attributed to D. Kanjilal.

21 records · Page 2Linked to original sources

arXiv2006

A Hybrid model for the origin of photoluminescence from Ge nanocrystals in SiO$_2$ matrix

In spite of several articles, the origin of visible luminescence from germanium nanocrystals in SiO$_2$ matrix is controversial even today. Some authors attribute the luminescence to quantum confinement of charge carriers in these nanocrystals. On the other hand, surface or defect states formed during the growth process, have also been proposed as the source of luminescence in this system. We have addressed this long standing query by simultaneous photoluminescence and Raman measurements on germanium nanocrystals embedded in SiO$_2$ matrix, grown by two different techniques: (i) low energy ion-implantation and (ii) atom beam sputtering. Along with our own experimental observations, we have summarized relevant information available in the literature and proposed a \emph{Hybrid Model} to explain the visible photoluminescence from nanocrystalline germanium in SiO$_2$ matrix.

cond-mat.mtrl-sci↗

arXiv2005

Ion Beam Synthesis of embedded SiC

The synthesis of embedded silicon carbide was carried out in N type silicon samples having (100) and (111) orientations using high dose implantation of carbon ions at room temperature. The variation of dose was employed to get dose dependence of silicon carbide formation. Postimplant annealing at 1000 C in order to anneal out the implantion induced defects and to get silicon carbide precipitates in silicon matrix. Detailed Fourier tarnsform infrared spectroscopy analysis and x-ray diffraction studies confirms the formation of cubic phase of silicon carbide. The grain size of the silicon carbide precipitates is estimated to a few nano meters. The silicon carbide precipitates have been found to exhibit a better crystalline order in silicon (100) samples than in silicon (111) samples.The x-ray diffraction results also indicate the amorphization of bombarded region of the silicon samples. After annealing the amorphized region got recrystalized into a polycrystalline phase of silicon.

cond-mat.mtrl-sci↗

arXiv2001

Peak effect and its evolution with defect structure in YBa2Cu3O7-d thin films at microwave frequencies

The vortex dynamics in YBa2Cu3O7-d thin films have been studied at microwave frequencies. A pronounced peak in the surface resistance, Rs, is observed in these films at frequencies of 4.88 and 9.55 GHz for magnetic fields varying from 0.2 to 0.8 T. The peak is associated with an order-disorder transformation of the flux line lattice as the temperature or field is increased. The occurrence of the peak in Rs is crucially dependent on the depinning frequency, wp and on the nature and concentration of growth defects present in these films. Introduction of artificial defects by swift heavy ion irradiation with 200 MeV Ag ion at a fluence of 4x1010 ions/cm2 enhances wp and suppresses the peak at 4.88 GHz but the peak at 9.55 GHz remains unaffected. A second peak at lower temperature has also been observed at 9.55 GHz. This is related to twin boundaries from angular dependence studies of Rs. Based on the temperature variation of Rs, vortex phase diagrams have been constructed at 9.55 GHz.

cond-mat.supr-con↗