D. Kos | Searcharxiv

arXiv2026

The physics of ELM-free regimes in EUROfusion tokamaks

The development of operational scenarios without large Type-I ELMs is of utmost importance for the stable operation and longevity of future tokamaks. The EUROfusion tokamak exploitation program has therefore made the understanding of ELM-free regimes a major topic of exploration across all its contributing devices (ASDEX Upgrade, JET, MAST-Upgrade, TCV, and WEST). An integrated program to investigate a range of Type-I ELM-free regimes has been developed covering the enhanced D-alpha (EDA), magnetic perturbations (MP), negative triangularity (NT), quasi-continuous exhaust (QCE), quiescent H-mode (QH), the baseline small ELMs (SE), I-mode, and X-point radiator (XPR) regimes. This contribution focuses on the development and understanding of the NT and QCE regimes on ASDEX Upgrade, JET, and TCV. The importance of transport via ballooning modes in both regimes is highlighted, as well as the progress in developing access models based on ideal-MHD. In the case of the QCE, this can also be expressed as a minimum separatrix density, which corresponds well to experimentally measured separatrix densities. Particular focus is paid to the performance of the QCE in terms of the achieved pedestal top values, which, when appropriately normalised, do not differ significantly from ELMy H-mode plasmas. This, combined with the predicted minimum separatrix density for the 15 MA ITER baseline plasma, highlight the relevance of the QCE as a potential operational scenario for both ITER and future reactors.

physics.plasm-ph↗

arXiv2019

Quantised conductance of one-dimensional strongly-correlated electrons in an oxide heterostructure

Oxide heterostructures are versatile platforms with which to research and create novel functional nanostructures. We successfully develop one-dimensional (1D) quantum-wire devices using quantum point contacts on MgZnO/ZnO heterostructures and observe ballistic electron transport with conductance quantised in units of 2e^{2}/h. Using DC-bias and in-plane field measurements, we find that the g-factor is enhanced to around 6.8, more than three times the value in bulk ZnO. We show that the effective mass m^{*} increases as the electron density decreases, resulting from the strong electron-electron interactions. In this strongly interacting 1D system we study features matching the 0.7 conductance anomalies up to the fifth subband. This paper demonstrates that high-mobility oxide heterostructures such as this can provide good alternatives to conventional III-V semiconductors in spintronics and quantum computing as they do not have their unavoidable dephasing from nuclear spins. This paves a way for the development of qubits benefiting from the low defects of an undoped heterostructure together with the long spin lifetimes achievable in silicon.

cond-mat.mes-hall↗