arXiv subjects

D. L. Smith

Publications and source records attributed to D. L. Smith.

26 records · Page 2Linked to original sources

arXiv2004

Spectroscopy of spontaneous spin noise as a probe of spin dynamics and magnetic resonance

Not all noise in experimental measurements is unwelcome. Certain fundamental noise sources contain valuable information about the system itself -- a notable example being the inherent voltage fluctuations that exist across any resistor (Johnson noise), from which temperature may be determined[1,2]. In magnetic systems, fundamental noise can exist in the form of random spin fluctuations[3,4]. Felix Bloch noted in 1946 that statistical fluctuations of N paramagnetic spins should generate measurable noise of order \sqrt{N} spins, even in zero magnetic field[5,6]. Here we address precisely these same spin fluctuations, using off-resonant Faraday rotation to passively[7,8] "listen" to the magnetization noise in an equilibrium ensemble of paramagnetic alkali atoms. These random fluctuations generate spontaneous spin coherences which precess and decay with the same characteristic energy and time scales as the macroscopic magnetization of an intentionally polarized or driven ensemble. Correlation spectra of the measured spin noise reveals g-factors, nuclear spin, isotope abundance ratios, hyperfine splittings, nuclear moments, and spin coherence lifetimes -- without having to excite, optically pump, or otherwise drive the system away from thermal equilibrium. These noise signatures scale inversely with interaction volume, suggesting routes towards non-perturbative, sourceless magnetic resonance of small systems.

cond-mat.dis-nn↗

arXiv2004

Persistent spin currents induced by a spatially-dependent magnetic field in a spin-1/2 Heisenberg antiferromagnetic ring

We show that a spatially-dependent magnetic field can induce a persistent spin current in a spin-1/2 Heisenberg antiferromagnetic ring, proportional to the solid angle subtended by the magnetic field on a unit sphere. The result is a direct consequence of Berry "parallel transport" in space. The magnitude of the spin current is determined by the ratio of longitudinal and transverse exchange interactions $J_\parallel/J_\perp$ and by the magnetic field. For large magnetic fields the Zeeman energy strongly renormalizes the Ising term giving rise to a maximum spin current. In the limit of $J_\parallel/J_\perp\ll1$ the amplitude of the current behaves like $1-(J_\parallel/J_\perp)^2$. In the opposite limit $πJ_\perp> J_\parallel>J_\perp$ the amplitude scales as $\sqrt{J_\parallel/ J_\perp}\exp{(-\sqrt{J_\parallel/J_\perp})}$.

cond-mat.mes-hall↗

arXiv2004

Ultrafast Conductivity Dynamics in Pentacene Probed using Terahertz Spectroscopy

We present measurements of the transient photoconductivity in pentacene single crystals using optical-pump THz-probe spectroscopy. We have measured the temperature and fluence dependence of the mobility of the photoexcited charge carriers with picosecond resolution. The pentacene crystals were excited at 3.0 eV which is above the bandgap of ~2.2 eV and the induced change in the far-infrared transmission was measured. At 30 K, the carrier mobility is mu ~ 0.4 cm^2/Vs and decreases to mu ~ 0.2 cm^2/Vs at room temperature. The transient terahertz signal reveals the presence of free carriers that are trapped on the timescale of a few ps or less, possibly through the formation of excitons, small polarons, or trapping by impurities.

cond-mat↗

arXiv2003

Spin-Polarized Electron Transport at Ferromagnet/Semiconductor Schottky Contacts

We theoretically investigate electron spin injection and spin-polarization sensitive current detection at Schottky contacts between a ferromagnetic metal and an n-type or p-type semiconductor. We use spin-dependent continuity equations and transport equations at the drift-diffusion level of approximation. Spin-polarized electron current and density in the semiconductor are described for four scenarios corresponding to the injection or the collection of spin polarized electrons at Schottky contacts to n-type or p-type semiconductors. The transport properties of the interface are described by a spin-dependent interface resistance, resulting from an interfacial tunneling region. The spin-dependent interface resistance is crucial for achieving spin injection or spin polarization sensitivity in these configurations. We find that the depletion region resulting from Schottky barrier formation at a metal/semiconductor interface is detrimental to both spin injection and spin detection. However, the depletion region can be tailored using a doping density profile to minimize these deleterious effects. For example, a heavily doped region near the interface, such as a delta-doped layer, can be used to form a sharp potential profile through which electrons tunnel to reduce the effective Schottky energy barrier that determines the magnitude of the depletion region. The model results indicate that efficient spin-injection and spin-polarization detection can be achieved in properly designed structures and can serve as a guide for the structure design.

cond-mat↗

arXiv2002

Effect of FET geometry on charge ordering of transition metal oxides

We examine the effect of an FET geometry on the charge ordering phase diagram of transition metal oxides using numerical simulations of a semiclassical model including long-range Coulomb fields, resulting in nanoscale pattern formation. We find that the phase diagram is unchanged for insulating layers thicker than approximately twice the magnetic correlation length. For very thin insulating layers, the onset of a charge clump phase is shifted to lower values of the strength of the magnetic dipolar interaction, and intermediate diagonal stripe and geometric phases can be suppressed. Our results indicate that, for sufficiently thick insulating layers, charge injection in an FET geometry can be used to experimentally probe the intrinsic charge ordering phases in these materials.

cond-mat.mes-hall↗

arXiv2002

Ground state properties of ferromagnetic metal/conjugated polymer interfaces

We theoretically investigate the ground state properties of ferromagnetic metal/conjugated polymer interfaces. The work is partially motivated by recent experiments in which injection of spin polarized electrons from ferromagnetic contacts into thin films of conjugated polymers was reported. We use a one-dimensional nondegenerate Su-Schrieffer-Heeger (SSH) Hamiltonian to describe the conjugated polymer and one-dimensional tight-binding models to describe the ferromagnetic metal. We consider both a model for a conventional ferromagnetic metal, in which there are no explicit structural degrees of freedom, and a model for a half-metallic ferromagnetic colossal magnetoresistance (CMR) oxide which has explicit structural degrees of freedom. The Fermi energy of the magnetic metallic contact is adjusted to control the degree of electron transfer into the polymer. We investigate electron charge and spin transfer from the ferromagnetic metal to the organic polymer, and structural relaxation near the interface. Bipolarons are the lowest energy charge state in the bulk polymer for the nondegenerate SSH model Hamiltonian. As a result electrons (or holes) transferred into the bulk of the polymer form spinless bipolarons. However, there can be spin density in the polymer localized near the interface.

cond-mat.mtrl-sci↗

arXiv2002

Electron Spin Injection at a Schottky Contact

We investigate theoretically electrical spin injection at a Schottky contact between a spin-polarized electrode and a non-magnetic semiconductor. Current and electron density spin-polarizations are discussed as functions of barrier energy and semiconductor doping density. The effect of a spin-dependent interface resistance that results from a tunneling region at the contact/semiconductor interface is described. The model can serve as a guide for designing spin-injection experiments with regard to the interface properties and device structure.

cond-mat↗

arXiv2000

Spin Injection from Ferromagnetic Metals into Gallium Nitride

The injection of spin polarized electrons from ferromagnetic metals (Fe and Co) into gallium nitride (GaN) via scanning tunneling microscopy (STM) is demonstrated. Electrons from STM tips are injected into the semiconductor. Net circular polarization of the emitted light is observed, which changes sign on reversal of the magnetization of the tip. The polarization is found to be in qualitative agreement with that expected from considerations based on the splitting of the valence bands due to spin-orbit coupling and the crystal field splitting corresponding to the wurtzite structure, and the magnitude of the spin polarization from the ferromagnetic metal. We find a lower bound for the spin injection efficiency of 25%, corresponding to a net spin polarization in the semiconductor of 10%. This is the largest reported value for a room temperature measurement of spin injection into semiconductors in air.

cond-mat.mes-hall↗