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D. M. Silevitch

Publications and source records attributed to D. M. Silevitch.

28 records · Page 2Linked to original sources

Using thermal boundary conditions to engineer the quantum state of a bulk magnet

The degree of contact between a system and the external environment can alter dramatically its proclivity to quantum mechanical modes of relaxation. We show that controlling the thermal coupling of cubic centimeter-sized crystals of the Ising magnet $LiHo_xY_{1-x}F_4$ to a heat bath can be used to tune the system between a glassy state dominated by thermal excitations over energy barriers and a state with the hallmarks of a quantum spin liquid. Application of a magnetic field transverse to the Ising axis introduces both random magnetic fields and quantum fluctuations, which can retard and speed the annealing process, respectively, thereby providing a mechanism for continuous tuning between the destination states. The non-linear response of the system explicitly demonstrates quantum interference between internal and external relaxation pathways.

cond-mat.mes-hall↗

Origins of bad metal conductivity and the insulator-metal transition in the rare-earth nickelates

For most metals, increasing temperature (T) or disorder will quicken electron scattering. This hypothesis informs the Drude model of electronic conductivity. However, for so-called bad metals this predicts scattering times so short as to conflict with Heisenberg's uncertainty principle. Here we introduce the rare-earth nickelates (RNiO_3, R = rare earth) as a class of bad metals. We study SmNiO_3 thin films using infrared spectroscopy while varying T and disorder. We show that the interaction between lattice distortions and Ni-O bond covalence explains both the bad metal conduction and the insulator-metal transition in the nickelates by shifting spectral weight over the large energy scale established by the Ni-O orbital interaction, thus enabling very low σwhile preserving the Drude model and without violating the uncertainty principle.

cond-mat.str-el↗

Hall effect measurements on epitaxial SmNiO3 thin films and implications for antiferromagnetism

The rare-earth nickelates (RNiO3) exhibit interesting phenomena such as unusual antiferromagnetic order at wavevector q = (1/2, 0, 1/2) and a tunable insulator-metal transition that are subjects of active research. Here we present temperature-dependent transport measurements of the resistivity, magnetoresistance, Seebeck coefficient, and Hall coefficient (RH) of epitaxial SmNiO3 thin films with varying oxygen stoichiometry. We find that from room temperature through the high temperature insulator-metal transition, the Hall coefficient is hole-like and the Seebeck coefficient is electron-like. At low temperature the Néel transition induces a crossover in the sign of RH to electron-like, similar to the effects of spin density wave formation in metallic systems but here arising in an insulating phase ~200 K below the insulator-metal transition. We propose that antiferromagnetism can be stabilized by bandstructure even in insulating phases of correlated oxides, such as RNiO3, that fall between the limits of strong and weak electron correlation.

cond-mat.mtrl-sci↗

Continuous and Discontinuous Quantum Phase Transitions in a Model Two-Dimensional Magnet

The Shastry-Sutherland model, which consists of a set of spin 1/2 dimers on a 2-dimensional square lattice, is simple and soluble, but captures a central theme of condensed matter physics by sitting precariously on the quantum edge between isolated, gapped excitations and collective, ordered ground states. We compress the model Shastry-Sutherland material, SrCu2(BO3)2, in a diamond anvil cell at cryogenic temperatures to continuously tune the coupling energies and induce changes in state. High-resolution x-ray measurements exploit what emerges as a remarkably strong spin-lattice coupling to both monitor the magnetic behavior and the absence or presence of structural discontinuities. In the low-pressure spin-singlet regime, the onset of magnetism results in an expansion of the lattice with decreasing temperature, which permits a determination of the pressure dependent energy gap and the almost isotropic spin-lattice coupling energies. The singlet-triplet gap energy is suppressed continuously with increasing pressure, vanishing completely by 2 GPa. This continuous quantum phase transition is followed by a structural distortion at higher pressure.

cond-mat.str-el↗

Contribution of spin pairs to the magnetic response in a dilute dipolar ferromagnet

We simulate the dc magnetic response of the diluted dipolar-coupled Ising magnet LiHo\(_{0.045}\)Y\(_{0.955}\)F\(_4\) in a transverse field, using exact diagonalization of a two-spin Hamiltonian averaged over nearest-neighbour configurations. The pairwise model, incorporating hyperfine interactions, accounts for the observed drop-off in the longitudinal (c-axis) susceptibility with increasing transverse field; with the inclusion of a small tilt in the transverse field, it also accounts for the behavior of the off-diagonal magnetic susceptibility. The hyperfine interactions do not appear to lead to qualitative changes in the pair susecptibilities, although they do renormalize the crossover fields between different regimes. Comparison with experiment indicates that antiferromagnetic correlations are more important than anticipated based on simple pair statistics and our first-principles calculations of the pair response. This means that larger clusters will be needed for a full description of the reduction in the diagonal response at small transverse fields.

cond-mat.stat-mech↗

Switchable Hardening of a Ferromagnet at Fixed Temperature

The intended use of a magnetic material, from information storage to power conversion, depends crucially on its domain structure, traditionally crafted during materials synthesis. By contrast, we show that an external magnetic field applied transverse to the preferred magnetization of a model disordered uniaxial ferromagnet is an isothermal regulator of domain pinning. At elevated temperatures, near the transition into the paramagnet, modest transverse fields increase the pinning, stabilize the domain structure, and harden the magnet, until a point where the field induces quantum tunneling of the domain walls and softens the magnet. At low temperatures, tunneling completely dominates the domain dynamics and provides an interpretation of the quantum phase transition in highly disordered magnets as a localization/delocalization transition for domain walls. While the energy scales of the rare earth ferromagnet studied here restrict the effects to cryogenic temperatures, the principles discovered are general and should be applicable to existing classes of highly anisotropic ferromagnets with ordering at room temperature or above.

cond-mat.mtrl-sci↗

Quantum and Classical Glass Transitions in $Li Ho_x Y_{1-x} F_4$

When performed in the proper low field, low frequency limits, measurements of the dynamics and the nonlinear susceptibility in the model Ising magnet in transverse field, $\text{LiHo}_x\text{Y}_{1-x}\text{F}_4$, prove the existence of a spin glass transition for $x$ = 0.167 and 0.198. The classical behavior tracks for the two concentrations, but the behavior in the quantum regime at large transverse fields differs because of the competing effects of quantum entanglement and random fields.

cond-mat.dis-nn↗

Ferromagnet in a continuously tuneable random field

The Random-Field Ising Model (RFIM) has been extensively studied as a model system for understanding the effects of disorder in magnets. Since the late 1970s, there has been a particular focus on realizations of the RFIM in site-diluted antiferromagnets. We observe random-field effects in the dilute dipole-coupled ferromagnet $\mathrm{LiHo}_x\mathrm{Y}_{1-x}\mathrm{F}_4$. In the presence of a magnetic field transverse to the Ising axis ($H_t$), the behavior of $\mathrm{LiHo}_x\mathrm{Y}_{1-x}\mathrm{F}_4$ becomes increasingly dominated by the influence of random-field terms in the effective Hamiltonian. This is seen experimentally in the shape of the ferromagentic-paramagnetic phase boundary and in changes to the critical exponents near the classical critical point. We find that above the classical critical point the magnetic susceptibility diverges as $H_t\to0$, and that the susceptibility both above and below the classical critical point can be collapsed onto a single universal curve using a modified Curie law which explicitly incorporates random-field contributions. The discovery of a ferromagnetic realization of the RFIM opens the door to investigation of the random-field problem with the wide variety of techniques available for probing ferromagnets, including the ability to examine both the statics and dynamics of the random-field problem. It also allows studying the effects of controlled amounts of randomness on the dynamics of domain pinning and the energetics of domain reversal.

cond-mat.dis-nn↗

Quantum Projection in an Ising Spin Liquid

A transverse magnetic field is used to scan the diagonal and off-diagonal susceptibility of the uniaxial quantum magnet, $\text{LiHo}_{0.045}\text{Y}_{0.955}\text{F}_4$. Clusters of strongly-coupled spins act as the primary source for the response functions, which result from a field-induced quantum projection of the system into a classically forbidden (meaning non-Ising) regime. Calculations based on spin pairs reproduce only some features of the data and fail to predict the measured off-diagonal response, providing evidence of a multi-spin collective state.

cond-mat.other↗

Room temperature domain wall pinning in bent ferromagnetic nanowires

Mechanically bent nickel nanowires show clear features in their room temperature magnetoresistance when a domain wall is pinned at the location of the bend. By varying the direction of an applied magnetic field, the wire can be prepared either in a single-domain state or a two-domain state. The presence or absence of the domain wall acts to shift the switching fields of the nanowire. In addition, a comparison of the magnetoresistance of the nanowire with and without a domain wall shows a shift in the resistance correlated with the presence of a wall. The resistance is decreased by 20-30 milli-Ohms when a wall is present, compared to an overall resistance of 40-60 Ohms. A model of the magnetization was developed that allowed calculation of the magnetostatic energy of the nanowires, giving an estimate for the nucleation energy of a domain wall.

cond-mat.mtrl-sci↗