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D. Mauri

Publications and source records attributed to D. Mauri.

3 recordsLinked to original sources

Frequency shift keying by current modulation in a MTJ-based STNO with high data rate

Spin torque nano-oscillators are nanoscopic microwave frequency generators which excel due to their large frequency tuning range and agility for amplitude and frequency modulation. Due to their compactness, they are regarded as suitable candidates for applications in wireless communications, where cost-effective and CMOS-compatible standalone devices are required. In this work, we study the ability of a magnetic-tunnel-junction (MTJ) based spin torque nano-oscillator to respond to a binary input sequence encoded in a square-shaped current pulse for its application as a frequency-shift-keying (FSK) based emitter. We demonstrate that below the limit imposed by the spin torque nano-oscillators intrinsic relaxation frequency, an agile variation between discrete oscillator states is possible. For this kind of devices, we demonstrate FSK up to data rates of 400 Mbps which is well suited for the application of such scillators in wireless networks.

physics.app-ph

Injection locking at 2f of spin torque oscillators under influence of thermal noise

Experiments, numerical simulations and an analytic model were developed to elucidate the effects of noise in the synchronized state of a tunnel junction based spin torque nano oscillator (STNO). It is demonstrated that in the in plane magnetized structure, while the frequency is locked, much higher reference currents are needed to reduce the noise by phase locking. Our analysis shows that it is possible to control the phase noise by the reference microwave current (IRF) and that it can be further reduced by increasing the bias current (IDC) of the oscillator, keeping the reference current in feasible limits for applications.

physics.app-ph

Spin torque, tunnel-current spin polarization and magnetoresistance in MgO magnetic tunnel junctions

We examine the spin torque (ST) response of magnetic tunnel junctions (MTJs) with ultra-thin MgO tunnel barrier layers to investigate the relationship between the spin-transfer torque and the tunnel magnetoresistance (TMR) under finite bias. We find that the spin torque per unit current exerted on the free layer decreases by less than 10% over a bias range where the TMR decreases by over 40%. We examine the implications of this result for various spin-polarized tunneling models and find that it is consistent with magnetic-state-dependent effective tunnel decay lengths.

cond-mat.mes-hall