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D. Muenstermann

Publications and source records attributed to D. Muenstermann.

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Production and validation of scintillating structural components from low-background Poly(ethylene naphthalate)

Poly Ethylene Naphthalate (PEN) is an industrial polymer plastic which is investigated as a low background, transparent, scintillating and wavelength shifting structural material. PEN scintillates in the blue region and has excellent mechanical properties both at room and cryogenic temperatures. Thus, it is an ideal candidate for active structural components in experiments for the search of rare events like neutrinoless double-beta decay or dark matter recoils. Such optically active structures improve the identification and rejection efficiency of background events, like this improving the sensitivity of experiments. This paper reports on the production of radiopure and transparent PEN plates These structures can be used to mount germanium detectors operating in cryogenic liquids (LAr, LN). Thus, as first application PEN holders will be used to mount the Ge detectors in the LEGEND-200 experiment. The whole process from cleaning the raw material to testing the PEN active components under final operational conditions is reported.

physics.ins-det

Development of very-thick transparent GEMs with wavelength-shifting capability for noble element TPCs

A new concept for the simultaneous detection of primary and secondary scintillation in time projection chambers is proposed. Its core element is a type of very-thick GEM structure supplied with transparent electrodes and machined from a polyethylene naphthalate plate, a natural wavelength-shifter. Such a device has good prospects for scalability and, by virtue of its genuine optical properties, it can improve on the light collection efficiency, energy threshold and resolution of conventional micropattern gas detectors. This, together with the intrinsic radiopurity of its constituting elements, offers advantages for noble gas and liquid based time projection chambers, used for dark matter searches and neutrino experiments. Production, optical and electrical characterization, and first measurements performed with the new device are reported.

physics.ins-det

Usage of PEN as self-vetoing structural material in low background experiments

PEN is an industrial polyester plastic which has become interesting for the physics community as a new type of plastic scintillator. PEN scintillates in the blue regime, which is ideal for most photosensor devices. In addition, PEN has excellent mechanical properties and very good radiopurity has been achieved. Thus, it is an ideal candidate for active structural components in low-background experiments. One possible application are holders for germanium detectors operating in cryogenic liquids (LAr, LN2). Such structures can help to reject surface and external backgrounds, boosting the sensitivity of experiments. In this contribution, the R\&D on PEN is outlined and an evaluation of the first production of PEN structures for the LEGEND-200 experiment is reported.

physics.ins-det

Use of polyethylene naphthalate as a self-vetoing structural material

The discovery of scintillation in the blue regime from polyethylene naphthalate (PEN), a commonly used high-performance industrial polyester plastic, has sparked considerable interest from the physics community as a new type of plastic scintillator material. This observation in addition to its good mechanical and radiopurity properties makes PEN an attractive candidate as an active structure scintillator for low-background physics experiments. This paper reports on investigations of its potential in terms of production tests of custom made tiles and various scintillation light output measurements. These investigations substantiate the high potential of usage of PEN in low-background experiments.

physics.ins-det

Test beam measurement of ams H35 HV-CMOS capacitively coupled pixel sensor prototypes with high-resistivity substrate

In the context of the studies of the ATLAS High Luminosity LHC programme, radiation tolerant pixel detectors in CMOS technologies are investigated. To evaluate the effects of substrate resistivity on CMOS sensor performance, the H35DEMO demonstrator, containing different diode and amplifier designs, was produced in ams H35 HV-CMOS technology using four different substrate resistivities spanning from $\mathrm{80}$ to $\mathrm{1000~Ω\cdot cm}$. A glueing process using a high-precision flip-chip machine was developed in order to capacitively couple the sensors to FE-I4 Readout ASIC using a thin layer of epoxy glue with good uniformity over a large surface. The resulting assemblies were measured in beam test at the Fermilab Test Beam Facilities with 120 GeV protons and CERN SPS H8 beamline using 80 GeV pions. The in-time efficiency and tracking properties measured for the different sensor types are shown to be compatible with the ATLAS ITk requirements for its pixel sensors.

physics.ins-det

Testbeam results of irradiated ams H18 HV-CMOS pixel sensor prototypes

HV-CMOS pixel sensors are a promising option for the tracker upgrade of the ATLAS experiment at the LHC, as well as for other future tracking applications in which large areas are to be instrumented with radiation-tolerant silicon pixel sensors. We present results of testbeam characterisations of the $4^{\mathrm{th}}$ generation of Capacitively Coupled Pixel Detectors (CCPDv4) produced with the ams H18 HV-CMOS process that have been irradiated with different particles (reactor neutrons and 18 MeV protons) to fluences between $1\cdot 10^{14}$ and $5\cdot 10^{15}$ 1-MeV-n$_\textrm{eq}$/cm$^2$. The sensors were glued to ATLAS FE-I4 pixel readout chips and measured at the CERN SPS H8 beamline using the FE-I4 beam telescope. Results for all fluences are very encouraging with all hit efficiencies being better than 97% for bias voltages of $85\,$V. The sample irradiated to a fluence of $1\cdot 10^{15}$ n$_\textrm{eq}$/cm$^2$ - a relevant value for a large volume of the upgraded tracker - exhibited 99.7% average hit efficiency. The results give strong evidence for the radiation tolerance of HV-CMOS sensors and their suitability as sensors for the experimental HL-LHC upgrades and future large-area silicon-based tracking detectors in high-radiation environments.

physics.ins-det

PEN as self-vetoing structural Material

Polyethylene Naphtalate (PEN) is a mechanically very favorable polymer. Earlier it was found that thin foils made from PEN can have very high radio-purity compared to other commercially available foils. In fact, PEN is already in use for low background signal transmission applications (cables). Recently it has been realized that PEN also has favorable scintillating properties. In combination, this makes PEN a very promising candidate as a self-vetoing structural material in low background experiments. Components instrumented with light detectors could be built from PEN. This includes detector holders, detector containments, signal transmission links, etc. The current R\&D towards qualification of PEN as a self-vetoing low background structural material is be presented.

physics.ins-det

Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype

Active pixel sensors based on the High-Voltage CMOS technology are being investigated as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC. This paper reports on the testbeam measurements performed at the H8 beamline of the CERN Super Proton Synchrotron on a High-Voltage CMOS sensor prototype produced in 180 nm AMS technology. Results in terms of tracking efficiency and timing performance, for different threshold and bias conditions, are shown.

physics.ins-det

The FE-I4 Telescope for particle tracking in testbeam experiments

A testbeam telescope, based on ATLAS IBL silicon pixel modules, has been built. It comprises six planes of planar silicon sensors with 250 x 50 um^2 pitch, read out by ATLAS FE-I4 chips. In the CERN SPS H8 beamline (180 GeV pi+) a resolution of better than 8 x 12 um^2 at the position of the device under test was achieved. The telescope reached a trigger rate of 6kHz with two measured devices. It is mainly designed for studies using FE-I4 based prototypes, but has also been successfully run with independent DAQ systems. Specialised trigger schemes ensure data synchronisation between these external devices and the telescope. A region-of-interest trigger can be formed by setting masks on the first and the last pixel sensor planes. The setup infrastructure provides centrally controlled and monitored high and low voltage power supplies, silicon oil cooling, temperature and humidity sensors and movable stages.

physics.ins-det

Experimental study of double beta decay modes using a CdZnTe detector array

An array of sixteen 1 cm^3 CdZnTe semiconductor detectors was operated at the Gran Sasso Underground Laboratory (LNGS) to further investigate the feasibility of double-beta decay searches with such devices. As one of the double-beta decay experiments with the highest granularity the 4 x 4 array accumulated an overall exposure of 18 kg days. The setup and performance of the array is described. Half-life limits for various double-beta decay modes of Cd, Zn and Te isotopes are obtained. No signal has been found, but several limits beyond 10^20 years have been performed. They are an order of magnitude better than those obtained with this technology before and comparable to most other experimental approaches for the isotopes under investigation. An improved limit for the beta^+/EC decay of Te 120 is given.

nucl-ex

Experimental study of 113Cd beta decay using CdZnTe detectors

A search for the 4-fold forbidden beta decay of \iso{Cd}{113} has been performed with CdZnTe semiconductors. With 0.86 kg $\cdot$ days of statistics a half-life for the decay of $T_{1/2} = (8.2 \pm 0.2 (stat.) ^{+0.2}_{-1.0} (sys.)) \cdot 10^{15}$yrs has been obtained. This is in good agreement with published values. A comparison of the spectral shape with the one given on the Table of Isotopes Web-page shows a severe deviation.

nucl-ex

An alternative search for the electron capture of Te-123

A search for the electron capture of Te-123 has been performed using CdZnTe detectors. After a measuring time of 195 h no signal could be found resulting in a lower half-life limt of $T_{1/2} > 3.2 \cdot 10^{16}$ yrs (95 % CL) for this process. This clearly discriminates between existing experimental results which differ by six orders of magnitude and our data are in strong favour of the result with longer half-lifes.

nucl-ex