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D. P. Young

Publications and source records attributed to D. P. Young.

At least 37 records · Page 2Linked to original sources

Magnetic and thermodynamic properties of cobalt doped iron pyrite: Griffiths Phase in a magnetic semiconductor

Doping of the band insulator FeS$_2$ with Co on the Fe site introduces a small density of itinerant carriers and magnetic moments. The lattice constant, AC and DC magnetic susceptibility, magnetization, and specific heat have been measured over the $0\le x\le 0.085$ range of Co concentration. The variation of the AC susceptibility with hydrostatic pressure has also been measured in a small number of our samples. All of these quantities show systematic variation with $x$ including a paramagnetic to disordered ferromagnetic transition at $x=0.007\pm 0.002$. A detailed analysis of the changes with temperature and magnetic field reveal small power law dependencies at low temperatures for samples near the critical concentration for magnetism, and just above the Curie temperature at higher $x$. In addition, the magnetic susceptibility and specific heat are non-analytic around H=0 displaying an extraordinarily sharp field dependence in this same temperature range. We interpret this behavior as due to the formation of Griffiths phases that result from the quenched disorder inherent in a doped semiconductor.

cond-mat.str-el↗

Spin-Orbit Scattering and Quantum Metallicity in Ultra-Thin Be Films

We compare and contrast the low temperature magnetotransport properties of ultra-thin, insulating, Be films with and without spin-orbit scattering (SOS). Beryllium films have very little intrinsic SOS, but by "dusting" them with sub-monolayer coverages of Au, one can introduce a well controlled SOS rate. Pure Be films with sheet resistance R >R_Q exhibit a low-temperature negative magnetoresistance (MR) that saturates to the quantum resistance R_Q = h/e^2. This high-field quantum metal phase is believed to represent a new ground state of the system. In contrast, the corresponding negative MR in Be/Au films is greatly diminished, suggesting that, in the presence of strong SOS, the quantum metal phase can only be reached at field scales well beyond those typically available in a low temperature laboratory.

cond-mat.str-el↗

Discovery of Griffiths phase in itinerant magnetic semiconductor Fe_{1-x}Co_xS_2

Critical points that can be suppressed to zero temperature are interesting because quantum fluctuations have been shown to dramatically alter electron gas properties. Here, the metal formed by Co doping the paramagnetic insulator FeS$_2$, Fe$_{1-x}$Co$_x$S$_2$, is demonstrated to order ferromagnetically at $x>x_c=0.01\pm0.005$ where we observe unusual transport, magnetic, and thermodynamic properties. We show that this magnetic semiconductor undergoes a percolative magnetic transition with distinct similarities to the Griffiths phase, including singular behavior at $x_c$ and zero temperature.

cond-mat.mtrl-sci↗

NaV2O4: a Quasi-1D Metallic Antiferromagnet with Half-Metallic Chains

NaV2O4 crystals were grown under high pressure using a NaCl flux, and the crystals were characterized with X-ray diffraction, electrical resistivity, heat capacity, and magnetization. The structure of NaV2O4 consists of double chains of edge-sharing VO6 octahedra. The resistivity is highly anisotropic, with the resistivity perpendicular to the chains more than 20 times greater than that parallel to the chains. Magnetically, the intrachain interactions are ferromagnetic and the interchain interactions are antiferromagnetic; 3D antiferromagnetic order is established at 140 K. First principles electronic structure calculations indicate that the chains are half metallic. Interestingly, the case of NaV2O4 seems to be a quasi-1D analogue of what was found for half-metallic materials.

cond-mat.str-el↗

Suppressed reflectivity due to spin-controlled localization in a magnetic semiconductor

The narrow gap semiconductor FeSi owes its strong paramagnetism to electron-correlation effects. Partial Co substitution for Fe produces a spin-polarized doped semiconductor. The spin-polarization causes suppression of the metallic reflectivity and increased scattering of charge carriers, in contrast to what happens in other magnetic semiconductors, where magnetic order reduces the scattering. The loss of metallicity continues progressively even into the fully polarized state, and entails as much as a 25% reduction in average mean-free path. We attribute the observed effect to a deepening of the potential wells presented by the randomly distributed Co atoms to the majority spin carriers. This mechanism inverts the sequence of steps for dealing with disorder and interactions from that in the classic Al'tshuler Aronov approach - where disorder amplifies the Coulomb interaction between carriers - in that here, the Coulomb interaction leads to spin polarization which in turn amplifies the disorder-induced scattering.

cond-mat.str-el↗

Metallic conductivity and a Ca substitution study of NaRh2O4 comprising a double chain system

The metallic compound NaRh2O4 forms a full range solid solution to the insulating phase CaRh2O4. At a Na concentration of 0.25 moles per formula unit, we found an unexpected contribution to the specific heat at low temperature [K. Yamaura et al. Chem. Mater. 17 (2005) 359]. To address this issue, specific heat and ac and dc magnetic susceptibilities were additionally measured under a variety of conditions for the Na0.25 sample. A new set of data clearly indicate the additional specific heat is magnetic in origin; however, the magnetic entropy is fairly small (~1 % of Schottky term for a simple splitting doublet), and there is no other evidence to suggest that a magnetic phase transition is responsible for the anomalous specific heat.

cond-mat.str-el↗

High-pressure synthesis, crystal structure determination, and a Ca substitution study of the metallic rhodium oxide NaRh2O4

The sodium rhodate NaRh2O4 was synthesized for the first time and characterized by neutron and x-ray diffraction studies, measurements of magnetic susceptibility, specific heat, electrical resistivity, and the Seebeck coefficient. NaRh2O4 crystallizes in the CaFe2O4-type structure, which is comprised of a characteristic RhO6 octahedra network. The compound is metallic in nature, probably reflecting the 1 to 1 mixed valence character of Rh(III) and Rh(IV) in the network. For further studies of the compound, the Rh valence was varied significantly by means of an aliovalent substitution: the full range solid solution between NaRh2O4 and CaRh2O4 was achieved and characterized as well. The metallic state was dramatically altered, and a peculiar magnetism developed in the low Na concentration range.

cond-mat.str-el↗

Super-hard Superconductivity

We present a study of the magnetic response of Type-II superconductivity in the extreme pinning limit, where screening currents within an order of magnitude of the Ginzburg-Landau depairing critical current density develop upon the application of a magnetic field. We show that this "super-hard" limit is well approximated in highly disordered, cold drawn, Nb and V wires whose magnetization response is characterized by a cascade of Meissner-like phases, each terminated by a catastrophic collapse of the magnetization. Direct magneto-optic measurements of the flux penetration depth in the virgin magnetization branch are in excellent agreement with the exponential model in which J_c(B)=J_co exp(-B/B_o), where J_co~5x10^6 A/cm^2 for Nb. The implications for the fundamental limiting hardness of a superconductor are discussed.

cond-mat.supr-con↗

Magnetic studies of the lightly Ru doped perovskite rhodates Sr(Ru,Rh)O$_3$

The solid solution between the ferromagnetic metal SrRuO$_3$ and the enhanced paramagnetic metal SrRhO$_3$ was recently reported [K. Yamaura et al., Phys. Rev. B 69 (2004) 024410], and an unexpected feature was found in the specific heat data at $x$=0.9 of SrRu$_{1-x}$Rh$_x$O$_3$. The feature was reinvestigated further by characterizing additional samples with various Ru concentrations in the vicinity of $x$=0.9. Specific heat and magnetic susceptibility data indicate that the feature reflects a peculiar magnetism of the doped perovskite, which appears only in the very narrow composition range 0.85$<$$x$$\le$0.95.

cond-mat.str-el↗

Low Temperature Susceptibility of the Noncentrosymmetric Superconductor CePt_3Si

We report ac susceptibility measurements of polycrystalline CePt_3Si down to 60 mK and in applied fields up to 9 T. In zero field, a full Meissner state emerges at temperatures T/Tc < 0.3, where Tc=0.65 K is the onset transition temperature. Though transport measurements show a relatively high upper critical field Bc2 ~ 4-5 T, the low temperature susceptibility, χ', is quite fragile to applied field, with χ' diminishing rapidly in fields of a few kG. Interestingly, the field dependence of χ' is well described by the power law, 4πχ'=(B/B_c)^{1/2}, where Bc is the field at which the onset of resistance is observed in transport measurements.

cond-mat.supr-con↗

Crystal Structure and Magnetic Properties of the Tri-layered Perovskite Sr4Rh3O10: A New Member of the Strontium Rhodates Family

The tri-layered perovskite Sr4Rh3O10 is reported for the first time. High-pressure and high-temperature heating (6 GPa and 1500 C) brought about successful preparation of a polycrystalline sample of the expected member at n=3 of Srn+1RhnO3n+1. Neutron-diffraction studies revealed the orthorhombic crystal structure (Pbam) at room temperature and 3.4 K. Local structure distortions rotationally tilt the RhO6 octahedra ~12 degrees in the perovskite-based blocks along the c-axis, and approximately a 20 % disorder was found in sequence of the alternating rotational tilt. The sample was also investigated by measurements of specific heat, thermopower, magnetic susceptibility, and electrical resistivity. The data clearly revealed enhanced paramagnetism and electrically conducting character, which reflected nature of the correlated 4d5-electrons of Rh4+. However, no clear signs of magnetic and electrical transitions were observed above 2 K and below 70 kOe, providing a remarkable contrast to the rich electronic phenomena for the significantly relevant ruthenate, Sr4Ru3O10.

cond-mat.str-el↗

Large Anomalous Hall effect in a silicon-based magnetic semiconductor

Magnetic semiconductors are attracting high interest because of their potential use for spintronics, a new technology which merges electronics and manipulation of conduction electron spins. (GaMn)As and (GaMn)N have recently emerged as the most popular materials for this new technology. While Curie temperatures are rising towards room temperature, these materials can only be fabricated in thin film form, are heavily defective, and are not obviously compatible with Si. We show here that it is productive to consider transition metal monosilicides as potential alternatives. In particular, we report the discovery that the bulk metallic magnets derived from doping the narrow gap insulator FeSi with Co share the very high anomalous Hall conductance of (GaMn)As, while displaying Curie temperatures as high as 53 K. Our work opens up a new arena for spintronics, involving a bulk material based only on transition metals and Si, and which we have proven to display a variety of large magnetic field effects on easily measured electrical properties.

cond-mat.str-el↗

Non--Ginsburg-Landau Critical Current Behavior in MgCNi3

We present transport critical current measurements on microfibers consisting of a 80-nm thick layer of polycrystalline MgCNi3 synthesized directly onto 7-micron diameter carbon fibers. Near the transition temperature, Tc, the critical current density, Jc, is well described by the power law form [1-(T/T_c)^2)]^2, with no crossover to the Ginsburg-Landau exponent 1.5. We extrapolate Jc(0) ~ 4 x 10^7 A/cm^2, which is an order of magnitude greater than estimates obtained from magnetization measurements of polycrystalline powders. The field dependence is purely exponential Jc(T,H) = Jc(T) exp(-H/Ho) over the entire field range of 0 to 9 T. The unconventional scaling behavior of the critical current appears rooted in an anomalous temperature dependence of the London penetration depth, suggesting an unusual superconducting ground state in MgCNi3.

cond-mat↗

Investigation of the ferromagnetic transition in the correlated 4d perovskites SrRu$_{1-x}$Rh$_x$O$_3$

The solid-solution SrRu$_{1-x}$Rh$_x$O$_3$ ($0\le x \le1$) is a variable-electron-configuration system forming in the nearly-cubic-perovskite basis, ranging from the ferromagnetic 4$d^4$ to the enhanced paramagnetic 4$d^5$. Polycrystalline single-phase samples were obtained over the whole composition range by a high-pressure-heating technique, followed by measurements of magnetic susceptibility, magnetization, specific heat, thermopower, and electrical resistivity. The ferromagnetic order in long range is gradually suppressed by the Rh substitution and vanishes at $x \sim 0.6$. The electronic term of specific-heat shows unusual behavior near the critical Rh concentration; the feature does not match even qualitatively with what was reported for the related perovskites (Sr,Ca)RuO$_3$. Furthermore, another anomaly in the specific heat was observed at $x \sim 0.9$.

cond-mat.supr-con↗

Electronic transport in EuB$_6$

EuB$_6$ is a magnetic semiconductor in which defects introduce charge carriers into the conduction band with the Fermi energy varying with temperature and magnetic field. We present experimental and theoretical work on the electronic magnetotransport in single-crystalline EuB$_6$. Magnetization, magnetoresistance and Hall effect data were recorded at temperatures between 2 and 300 K and in magnetic fields up to 5.5 T. The negative magnetoresistance is well reproduced by a model in which the spin disorder scattering is reduced by the applied magnetic field. The Hall effect can be separated into an ordinary and an anomalous part. At 20 K the latter accounts for half of the observed Hall voltage, and its importance decreases rapidly with increasing temperature. As for Gd and its compounds, where the rare-earth ion adopts the same Hund's rule ground state as Eu$^{2+}$ in EuB$_{6}$, the standard antisymmetric scattering mechanisms underestimate the $size$ of this contribution by several orders of magnitude, while reproducing its $shape$ almost perfectly. Well below the bulk ferromagnetic ordering at $T_C$ = 12.5 K, a two-band model successfully describes the magnetotransport. Our description is consistent with published de Haas van Alphen, optical reflectivity, angular-resolved photoemission, and soft X-ray emission as well as absorption data, but requires a new interpretation for the gap feature deduced from the latter two experiments.

cond-mat.str-el↗

The Origin of Weak Ferromagnetism in CaB6

We have combined the results of magnetization and Hall effect measurements to conclude that the ferromagnetic moments of lightly doped CaB6 samples display no systematic variation with electron doping level. Removal of the surface with acid etching substantially reduces the measured moment, although the Hall constant and resistivity are unaffected, indicating that the ferromagnetism largely resides on and near the sample surface. Electron microprobe experiments reveal that Fe and Ni are found at the edges of facets and growth steps, and on other surface features introduced during growth. Our results indicate that the weak ferromagnetism previously reported in undoped CaB6 is at least partly extrinsic.

cond-mat.str-el↗

The Effect of Disorder on a Quantum Phase Transition

The conductivity and magnetization of Fe1-xCoxS2 were measured to investigate quantum critical behavior in disordered itinerant magnets. Small x (<0.001) is required to convert insulating iron pyrite into a metal, followed by a paramagnetic-to-ferromagnetic metal transition at x = 0.032+/-0.004. Singular contributions are discovered that are distinct from those at either metal-insulator or magnetic transitions. Our data reveal that disorder and low carrier density associated with proximity to a metal-insulator transition fundamentally modifies the critical behavior of the magnetic transition.

cond-mat.str-el↗

High Magnetic Field Sensor Using LaSb2

The magnetotransport properties of single crystals of the highly anisotropic layered metal LaSb2 are reported in magnetic fields up to 45 T with fields oriented both parallel and perpendicular to the layers. Below 10 K the perpendicular magnetoresistance of LaSb2} becomes temperature independent and is characterized by a 100-fold linear increase in resistance between 0 and 45 T with no evidence of quantum oscillations down to 50 mK. The Hall resistivity is hole-like and gives a high field carrier density of n ~ 3x10^20 cm^-3. The feasibility of using LaSb2 for magnetic field sensors is discussed.

cond-mat.mtrl-sci↗