arXiv subjects

D. Shiga

Publications and source records attributed to D. Shiga.

7 recordsLinked to original sources

arXiv2026

Electronic phase separation and emergence of a nondimerized insulating phase in VO$_2$ $(110)_{\mathit{R}}$ ultrathin films

Using in situ photoemission spectroscopy and x-ray absorption spectroscopy, we investigated the thickness dependence of the electronic structure and V-V dimerization in VO$_2$/TiO$_2$ (110) ultrathin films, in which the one-dimensional V-V chains along the $c_{\mathit{R}}$ axis lie in the film plane. In VO$_2$ $(110)_{\mathit{R}}$ films, the reduction in dimensionality along the surface-normal direction is not expected to impose a geometric constraint on V-V dimerization, unlike in VO$_2$ $(001)_{\mathit{R}}$ films. Nevertheless, the characteristic spectral changes associated with the temperature-driven metal-insulator transition observed in thick films persist down to 1.5 nm, whereas at 1 nm an insulating electronic phase is observed without V-V dimerization. This behavior is highly similar to that reported for VO$_2$ $(001)_{\mathit{R}}$, suggesting that the enhancement of Mott instability resulting from reduced dimensionality is a common and essential driving force for the emergence of the nondimerized insulating phase in VO$_2$ ultrathin films. Meanwhile, unlike in VO$_2$ $(001)_{\mathit{R}}$, the nondimerized insulating phase in VO$_2$ $(110)_{\mathit{R}}$ coexists with the phase exhibiting the temperature-driven metal-insulator transition. Its fraction increases exponentially with decreasing thickness and becomes dominant at 1 nm. The corresponding effective critical thickness is estimated to be 2.2 nm. These results imply that the geometric orientation of the V-V chains dictates the spatial evolution of electronic phase separation via strain-mediated phase competition.

cond-mat.str-el↗

arXiv2026

Origin of multiple skyrmion phases in EuAl4

The Dzyaloshinskii-Moriya (DM) interaction has been considered essential for skyrmion formation, however, the discovery of skyrmion lattices (SkLs) in nominally centrosymmetric materials where the DM interaction is forbidden, such as Eu(Ga$_{1-x}$Al$_x$)$_4$, has challenged this established view. Recent structural investigations of Eu(Ga$_{1-x}$Al$_x$)$_4$ have further complicated this issue by revealing that the charge-density wave breaks local symmetry, theoretically allowing DM interaction. This raises a fundamental question: are the complex magnetic phases driven by the DM interaction or by alternative mechanisms? Here, using soft-x-ray angle-resolved photoemission spectroscopy, we determine the three-dimensional bulk electronic structure of Eu(Ga$_{1-x}$Al$_x$)$_4$, and elucidate the electronic origins of its rich magnetic orders. We directly observe an x-dependent Lifshitz transition leading to the emergence of a Fermi-surface pocket. Importantly, multiple nesting vectors derived from this pocket match the symmetries and periodicities of the multiple SkLs. Moreover, these nesting vectors can also account for other magnetic orders, such as the zero-field helical magnetism, suggesting a common electronic origin of the complex magnetic phases. These findings suggest that competing nesting-induced Ruderman-Kittel-Kasuya-Yosida interactions and their engineering can generate and control various SkLs and related topological spin textures.

cond-mat.str-el↗

arXiv2025

Interface-induced collective phase transition in VO2-based bilayers studied by layer selective spectroscopy

We investigated the origin of collective electronic phase transitions induced at the heterointerface between monoclinic insulating VO2 and rutile metallic electron-doped VO2 layers using in situ soft x-ray photoemission spectroscopy (PES) and x-ray absorption spectroscopy (XAS) on nanoscale VO2/V0.99W0.01O2 (001)R bilayers. Thanks to the surface sensitivity of PES and XAS, we determined the changes in the electronic structure and V-V dimerization in each constituent layer separately. The layer selective observation of the electronic and crystal structures in the upper VO2 layer of the bilayer indicates that the monoclinic insulating phase VO2 layer undergoes a transition to the rutile metallic phase by forming the heterointerface. Detailed temperature-dependent measurements reveal that the rutile metallic phase VO2 undergoes a transition to the monoclinic insulating phase with a decrease in temperature, as in the case of a VO2 single-layer film. Furthermore, during the temperature-induced phase transition in the VO2 layer, the spectra are well described by an in-plane phase separation of the rutile metallic and monoclinic insulating phases. These results suggest that the interface-induced transition from the monoclinic insulating to the rutile metallic phase in the VO2 layer of bilayers occurs as a collective phase transition derived from the static energy balance between the interfacial energy and the bulk free energies of the constituent layers.

cond-mat.str-el↗

arXiv2025

Out-of-phase Plasmon Excitations in the Trilayer Cuprate Bi$_2$Sr$_2$Ca$_2$Cu$_3$O$_{10+\delta}$

Within a homologous series of cuprate superconductors, variations in the stacking of CuO$_2$ layers influence the collective charge dynamics through the long-range Coulomb interactions. We use O $K$-edge resonant inelastic x-ray scattering to reveal plasmon excitations in the optimally-doped trilayer Bi$_2$Sr$_2$Ca$_2$Cu$_3$O$_{10+\delta}$. The observed plasmon exhibits nearly $q_z$-independent dispersion and a large excitation gap of approximately 300 meV. This mode is primarily ascribed to the $\omega_{-}$ mode, where the charge density on the outer CuO$_2$ sheets oscillates out of phase while the density in the inner sheet remains unaltered at $q_z=0$. The intensity of the acoustic $\omega_3$ mode is relatively weak and becomes vanishingly small near $(q_x, q_y)=(0, 0)$. This result highlights a qualitative change in the eigenmode of the dominant low-energy plasmon with the number of CuO$_2$ layers.

cond-mat.str-el↗

arXiv2022

Electronic phase diagram of Cr-doped VO2 epitaxial films studied by in situ photoemission spectroscopy

Through in situ photoemission spectroscopy (PES), we investigated the changes in the electronic structure of Cr-doped VO2 films coherently grown on TiO2 (001) substrates. The electronic phase diagram of CrxV1-xO2 is drawn by a combination of electric and spectroscopic measurements. The phase diagram is similar to that of bulk CrxV1-xO2, while the temperature of metal-insulator transition (TMIT) is significantly suppressed by the epitaxial strain effect. In the range of x = 0-0.04, where TMIT remains unchanged as a function of x, the PES spectra show dramatic change across TMIT, demonstrating the characteristic spectral changes associated with the Peierls phenomenon. In contrast, for x > 0.04, the TMIT linearly increases, and the metal-insulator transition (MIT) may disappear at x = 0.08-0.12. The PES spectra at x = 0.08 exhibit pseudogap behavior near the Fermi level, whereas the characteristic temperature-induced change remains almost intact, suggesting the existence of local V-V dimerization. The suppression of V-V dimerization with increasing x was confirmed by polarization-dependent x-ray absorption spectroscopy. These spectroscopic investigations reveal that the energy gap and V 3d states are essentially unchanged with 0 $\le$ x $\le$ 0.08 despite the suppression of V-V dimerization. The invariance of the energy gap with respect to x suggests that the MIT in CrxV1-xO2 arises primarily from the strong electron correlations, namely the Peierls-assisted Mott transition. Meanwhile, the pseudogap at x = 0.08 eventually evolves to a full gap (Mott gap) at x = 0.12, which is consistent with the disappearance of the temperature-dependent MIT in the electronic phase diagram. These results demonstrate that a Mott insulating phase without V-V dimerization is stabilized at x > 0.08 as a result of the superiority of Mott instability over the Peierls one.

cond-mat.str-el↗

arXiv2020

Electronic structure of a 3x3-ordered silicon layer on Al(111)

Electronic structure of the 3x3 ordered-phase of a silicon (Si) layer on Al(111) has been studied by angle resolved photoemission spectroscopy (ARPES) technique using synchrotron radiation and modeled by a trial atomic model. A closed Fermi surface originating from linearly dispersing band is identified. A band structure calculation of a trial atomic model of the honeycomb silicene on Al(111) implies that the metallic band originates from the Al-Si hybrid state that has the Dirac cone-like dispersion curves. The Si layer on Al(111) can be a model system of Xene to realize the massless electronic system through the overlayer-substrate interaction.

cond-mat.mtrl-sci↗

arXiv2020

Thickness dependence of electronic and crystal structures in VO$_2$ ultrathin films: suppression of the collaborative Mott-Peierls transition

Through ${in~situ}$ photoemission spectroscopy, we investigated the change in the electronic and crystal structures of dimensionality-controlled VO$_2$ films coherently grown on TiO$_2$(001) substrates. In the nanostructured films, the balance between the instabilities of a bandlike Peierls transition and a Mott transition is controlled as a function of thickness. The characteristic spectral change associated with temperature-driven metal-insulator transition in VO$_2$ thick films holds down to 1.5 nm (roughly corresponding to five V atoms along the [001] direction), whereas VO$_2$ films of less than 1.0 nm exhibit insulating nature without V-V dimerization. These results suggest that the delicate balance between a Mott instability and a bandlike Peierls instability is modulated at a scale of a few nanometers by the dimensional crossover effects and confinement effects, which consequently induce the complicated electronic phase diagram of ultrathin VO$_2$ films.

cond-mat.str-el↗