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D. Tsybychev

Publications and source records attributed to D. Tsybychev.

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Test Beam Results of 3D Silicon Pixel Sensors for the ATLAS upgrade

Results on beam tests of 3D silicon pixel sensors aimed at the ATLAS Insertable-B-Layer and High Luminosity LHC (HL-LHC)) upgrades are presented. Measurements include charge collection, tracking efficiency and charge sharing between pixel cells, as a function of track incident angle, and were performed with and without a 1.6 T magnetic field oriented as the ATLAS Inner Detector solenoid field. Sensors were bump bonded to the front-end chip currently used in the ATLAS pixel detector. Full 3D sensors, with electrodes penetrating through the entire wafer thickness and active edge, and double-sided 3D sensors with partially overlapping bias and read-out electrodes were tested and showed comparable performance.

physics.ins-det

The Layer 0 Inner Silicon Detector of the D0 Experiment

This paper describes the design, fabrication, installation and performance of the new inner layer called Layer 0 (L0) that was inserted in the existing Run IIa Silicon Micro-Strip Tracker (SMT) of the D0 experiment at the Fermilab Tevatron collider. L0 provides tracking information from two layers of sensors, which are mounted with center lines at a radial distance of 16.1 mm and 17.6 mm respectively from the beam axis. The sensors and readout electronics are mounted on a specially designed and fabricated carbon fiber structure that includes cooling for sensor and readout electronics. The structure has a thin polyimide circuit bonded to it so that the circuit couples electrically to the carbon fiber allowing the support structure to be used both for detector grounding and a low impedance connection between the remotely mounted hybrids and the sensors.

physics.ins-det

Preliminary results of 3D-DDTC pixel detectors for the ATLAS upgrade

3D Silicon sensors fabricated at FBK-irst with the Double-side Double Type Column (DDTC) approach and columnar electrodes only partially etched through p-type substrates were tested in laboratory and in a 1.35 Tesla magnetic field with a 180GeV pion beam at CERN SPS. The substrate thickness of the sensors is about 200um, and different column depths are available, with overlaps between junction columns (etched from the front side) and ohmic columns (etched from the back side) in the range from 110um to 150um. The devices under test were bump bonded to the ATLAS Pixel readout chip (FEI3) at SELEX SI (Rome, Italy). We report leakage current and noise measurements, results of functional tests with Am241 gamma-ray sources, charge collection tests with Sr90 beta-source and an overview of preliminary results from the CERN beam test.

physics.ins-det