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D. V. Efremov

Publications and source records attributed to D. V. Efremov.

At least 19 recordsLinked to original sources

Thermal transport and low-temperature specific heat in 4Hb-TaS$_2$

We investigate the low-energy excitation spectrum of the van der Waals heterostructure superconductor 4Hb-TaS$_2$ using ultra-low-temperature specific-heat and thermal-conductivity measurements with magnetic fields applied parallel and perpendicular to the crystallographic $c$ axis. The specific heat is broadly consistent with a nodeless superconducting gap, but retains a finite residual linear contribution, indicating a small residual low-energy density of states in the superconducting state. In addition, a pronounced upturn appears below approximately 0.3K. Its weak magnetic-field dependence, together with the absence of a corresponding feature in thermal transport, supports an interpretation in terms of localized degrees of freedom, most likely a nuclear Schottky contribution. In contrast to the finite residual thermodynamic density of states, the thermal conductivity extrapolates to a vanishing zero-field electronic linear term within experimental uncertainty for both field orientations. Thus, the residual low-energy states do not form a detectable itinerant heat-conduction channel. In finite magnetic field, the electronic heat transport grows rapidly. For out-of-plane fields, this response is broadly consistent with previous thermal-conductivity measurements and with the behavior commonly associated with multigap nodeless superconductivity. The even steeper increase observed for in-plane fields suggests that the field-induced quasiparticle response of 4Hb-TaS$_2$ is more complicated than the standard multigap picture alone.

cond-mat.supr-con

Point-contact enhanced superconductivity in trigonal PtBi2: quest for the origin of high-Tc

We studied enhanced superconductivity in point contacts (PCs) based on a type-I Weyl semimetal trigonal t-PtBi2 using both normal metal (Ag, Cu, Pt) and ferromagnetic (Fe, Co, Ni) tips by measuring the differential resistance dV/dI(V) curves. In most cases, the value of the superconducting critical temperature Tc ranges between 3 and 5 K, which is several times higher than the maximum bulk Tc. Notably, among the various PCs we examined, a few achieved Tc values as high as 8 K, including those with both normal and ferromagnetic tips. Additionally, the critical magnetic field is also highly enhanced in these PCs and reaches up to several Tesla. The common reason for the Tc increase may be related to pressure/strain caused during the PC's formation. It is worth noting that a greater increase in Tc is observed in PCs formed at the edge of the sample flake, compared to those formed on the plane of the platelet. The results also reveal that the enhancement of Tc in PCs based on t-PtBi2 is compatible with ferromagnetic tip, which may suggest a potentially complex nature of enhanced superconductivity. Our findings besides suggest that t-PtBi2 is a promising candidate for realizing topological superconductivity at more accessible temperatures.

cond-mat.supr-con

Seven Etudes on dynamical Keldysh Model

We present a comprehensive pedagogical discussion of a family of models describing the propagation of a single particle in a multicomponent non-Markovian Gaussian random field. We report some exact results for single-particle Green's functions, self-energy, vertex part and T-matrix. These results are based on a closed form solution of the Dyson equation combined with the Ward identity. Analytical properties of the solution are discussed. Further we describe the combinatorics of the Feynman diagrams for the Green's function and the skeleton diagrams for the self-energy and vertex, using recurrence relations between the Taylor expansion coefficients of the self-energy. Asymptotically exact equations for the number of skeleton diagrams in the limit of large N are derived. Finally, we consider possible realizations of a multicomponent Gaussian random potential in quantum transport via complex quantum dot experiments.

cond-mat.mes-hall

Observation of resistive switching and diode effect in the conductivity of TiTe2 point contacts

We measured the I(V) and dV/dI(V) characteristics of TiTe2-based point contacts (PCs) from room to helium temperatures. Features indicating the emergence of a charge density wave (CDW) were detected. They represent symmetrical relatively V=0 maxima in dV/dI(V) around 150 mV at liquid helium temperatures, which disappear above 150 K, similar to the case of sister CDW compound TiSe2. Applying higher voltages above 200 mV, we observed resistive switching in TiTe2 PCs from a metallic-like low-resistance state to non-metallic type high-resistance state with a change of resistance by an order of magnitude. A unique diode-like effect was registered in "soft" TiTe2 PCs with hysteretic I(V) at negative voltage on TiTe2. Discovering the resistive switching and diode effect adds TiTe2 to the transition-metal dichalcogenides, which could be useful in developing non-volatile ReRAM and other upcoming nanotechnologies.

cond-mat.mes-hall

Chiral anomaly in the Weyl semimetal TaRhTe$_4$

TaRhTe$_4$ is a type-IIWeyl semimetal, exhibiting fourWeyl points in proximity to the Fermi level. In this article, we report our results of a systematic study of longitudinal magnetoresistance in TaRhTe$_4$. Our findings indicate that magnetoresistance becomes negative only when the magnetic field is applied parallel to the electric field. By rotating E (as well as B), we show that its origin is consistent with the prediction of the chiral anomaly, while the current jetting effect and weak localization could be excluded. The negative magnetoresistance persists up to room temperature, suggesting that TaRhTe4 exhibits distinctive properties within the family of Weyl semimetals.

cond-mat.str-el

Fano physics behind the N-resonance in graphene

Bound states and scattering resonances in the unoccupied continuum of a two-dimensional crystal predicted in [Phys$.$Rev$.$ B 87, 041405(R) (2013)] are considered within an exactly solvable model. A close connection of the observed resonances with those arising in the Fano theory is revealed. The resonance occurs when the lateral scattering couples the layer-perpendicular incident electron wave to a strictly bound state. The coupling strength determines the location of the pole in the scattering amplitude in the complex energy plane, which is analytically shown to lead to a characteristic Fano-lineshape of the energy dependence of the electron transmissivity through the crystal. The implications for the timing of the resonance scattering are discussed. The analytical results are illustrated by ab initio calculations for a graphene monolayer.

cond-mat.mes-hall

Large Nernst effect in Te-based van der Waals materials

Layered van der Waals tellurides reveal topologically non-trivial properties that give rise to unconventional magneto-transport phenomena. Additionally, their semimetallic character with high mobility makes them promising candidates for large magneto-thermoelectric effects. Remarkable studies on the very large and unconventional Nernst effect in WTe$_2$ have been reported, raising questions about whether this property is shared across the entire family of van der Waals tellurides. In this study, systematic measurements of the Nernst effect in telluride van der Waals Weyl semimetals are presented. Large linear Nernst coefficients in WTe$_2$ and MoTe$_2$ are identified, and moderate Nernst coefficients with non-linear behavior in magnetic fields are observed in W$_{0.65}$Mo$_{0.35}$Te$_2$, TaIrTe$_4$, and TaRhTe$_4$. Within this sample set, a correlation between the dominant linear-in-magnetic-field component of the Nernst coefficient and mobility is established, aligning with the established Nernst scaling framework, though with a different scaling factor compared to existing literature. This enhancement might be caused by the shared favorable electronic band structure of this family of materials. Conversely, the non-linear component of the Nernst effect in a magnetic field could not be correlated with mobility. This non-linear term is almost absent in the binary compounds, suggesting a multiband origin and strong compensation between electron-like and hole-like carriers. This comprehensive study highlights the potential of van der Waals tellurides for thermoelectric conversion.

cond-mat.mtrl-sci

Doping dependence of low-energy charge collective excitations in high-T$_c$ cuprates

In this study, we analyze the dielectric function of high-Tc cuprates as a function of doping level, taking into account the full energy band dispersion within the CuO$_2$ monolayer. In addition to the conventional two-dimensional (2D) gapless plasmon mode, our findings reveal the existence of three anomalous branches within the plasmon spectrum. Two of these branches are overdamped modes, designated as hyperplasmons, and the third is an almost one-dimensional plasmon mode (1DP). We derive an analytic expression for dynamic part of the response function. Furthermore, we investigated the effect of the doping on these modes. Our analysis demonstrates that in the doping level range close to the optimal doping level, the properties of all three modes undergo a significant transformation.

cond-mat.supr-con

Breaking of Lorentz invariance caused by the interplay between spin-orbit interaction and transverse phonon modes in quantum wires

We investigate Lorentz invariance breaking in quantum wires due to Rashba spin-orbit interaction and transverse phonons. Using bosonization, we derive an effective action coupling electronic and mechanical degrees of freedom. Stikingly, at a quantum phase transition between straight and bent wire states, we find a gapped phonon mode and a gapless mode with quadratic dispersion, signaling the breaking of Lorentz invariance. We explore stability conditions for general potentials and propose nano-mechanical back-action as a sensitive tool for detecting this transition, with implications for Sliding Luttinger Liquids and dimensional crossover studies.

cond-mat.mes-hall

Electron-phonon interaction, magnetic phase transition, charge density waves and resistive switching in VS2 and VSe2 revealed by Yanson point contact spectroscopy

VS2 and VSe2 have attracted particular attention among the transition metals dichalcogenides because of their promising physical properties concerning magnetic ordering, charge density wave (CDW), emergent superconductivity, etc., which are very sensitive to stoichiometry and dimensionality reduction. Yanson point contact (PC) spectroscopic study reveals metallic and nonmetallic states in VS2 PCs, as well as a magnetic phase transition was detected below 25 K. Analysis of PC spectra of VS2 testifies the realization of the thermal regime in PCs. At the same time, rare PC spectra, where the magnetic phase transition was not visible, shows a broad maximum of around 20 mV, likely connected with electron-phonon interaction (EPI). On the other hand, PC spectra of VSe2 demonstrate metallic behavior, which allowed us to detect features associated with EPI and CDW transition. The Kondo effect appeared for both compounds, apparently due to interlayer vanadium ions. Besides, the resistive switching was observed in PCs on VSe2 between a low resistive, mainly metallic-type state, and a high resistive nonmetallic-type state by applying bias voltage (about 0.4V). In contrast, reverse switching occurs by applying a voltage of opposite polarity (about 0.4V). The reason may be the alteration of stoichiometry in the PC core due to the displacement of V ions to interlayer under a high electric field. The observed resistive switching characterize VSe2 as a potential material, e.g., for non-volatile resistive RAM, neuromorphic engineering, and for other nanoelectronic applications. At the same time, VSe2 attracts attention as a rare layered van der Waals compound with magnetic transition.

cond-mat.mes-hall

Peculiarities of electron transport and resistive switching in point contacts on TiSe2, TiSeS and CuxTiSe2

TiSe2 has received much attention among the transition metals chalcogenides because of its thrilling physical properties concerning atypical resistivity behavior, emerging of charge density wave (CDW) state, induced superconductivity etc. Here, we report discovery of new feature of TiSe2, namely, observation of resistive switching in voltage biased point contacts (PCs) based on TiSe2 and its derivatives doped by S and Cu (TiSeS, CuxTiSe2). The switching is taking place between a low resistive mainly metallic-type state and a high resistive semiconducting-type state by applying bias voltage (usually below 0.5V), while reverse switching takes place by applying voltage of opposite polarity (usually below 0.5V). The difference in resistance between these two states can reach up to two orders of magnitude at the room temperature. The origin of the effect can be attributed to the variation of stoichiometry in PC core due to drift/displacement of Se/Ti vacancies under high electric field. Additionally, we demonstrated, that heating takes place in PC core, which can facilitate the electric field induced effect. At the same time, we did not found any evidence for CDW spectral features in our PC spectra for TiSe2. The observed resistive switching allows to propose TiSe2 and their derivatives as the promising materials, e.g., for non-volatile resistive random access memory (ReRAM) engineering.

cond-mat.mes-hall

Crystal growth, characterization and electronic band structure of TiSeS

Layered semimetallic van der Waals materials TiSe2 has attracted a lot of attention because of interplay of a charge density wave (CDW) state and superconductivity. Its sister compound TiS2, being isovalent to TiSe2 and having the same crystal structure, shows a semiconducting behavior. The natural rises what happens at the transition point in TiSe2-xSx, which is expected for x close to 1. Here we report the growth and characterization of TiSeS single crystals and the study of the electronic structure using density functional theory (DFT) and angle-resolved photoemission (ARPES). We show that TiSeS single crystals have the same morphology as TiSe2. Transport measurements reveal a metallic state, no evidence of CDW was found. DFT calculations suggest that the electronic band structure in TiSeS is similar to that of TiSe2, but the electron and hole pockets in TiSeS are much smaller. The ARPES results are in good agreement with the calculations.

cond-mat.str-el

Electron-phonon interaction and point contact enhanced superconductivity in trigonal PtBi2

PtBi2 is a Weyl semimetal, which demonstrates superconductivity with low critical temperature Tc ~ 0.6 K in the bulk. Here, we report our study of electron-phonon interaction (EPI) in trigonal PtBi2 by the Yanson point contact (PC) spectroscopy and presenting the observation of PC enhanced superconductivity. We show, that the Yansons PC spectra display a broad maximum around 15 meV, indicating, apparently, EPI mechanism of Cooper pairing in PtBi2. Moreover, we discovered a substantial increase of Tc up to ~ 3.5 K in PCs. The observed Tc is sufficiently higher than the bulk value, as well as detected at hydrostatic pressure. We calculated the phonon density of states and Eliashberg EPI function in PtBi2 within the framework of the density functional theory. A comparison of experimental data with theoretical calculations showed acceptable agreement. The theoretical Tc is 3.5 K, which corresponds to the experimental value.

cond-mat.supr-con

Switchable domains in point contacts based on transition metal tellurides

We report resistive switching in voltage biased point contacts (PCs) based on series of van der Waals transition metals tellurides (TMTs) such as MeTe2 (Me=Mo, W) and TaMeTe4 (Me= Ru, Rh, Ir). The switching occurs between a low resistive "metallic-type" state, which is the ground state, and a high resistive "semiconducting-type" state by applying certain bias voltage (<1V), while reverse switching takes place by applying voltage of opposite polarity. The origin of the effect can be formation of domain in PC core by applying a bias voltage, when a strong electric field (about 10kV/cm) modifies the crystal structure and controls its polarization. In addition to the discovery of the switching effect in PCs, we also suggest a simple method of material testing before functionalizing them, which offers a great advantage in finding suitable novel substances. The new functionality of studied TMTs arising from switchable domains in submicron hetero-structures that are promising, e.g., for non-volatile resistive random access memory (RRAM) engineering.

cond-mat.mes-hall

Polymorphic PtBi2: Growth, structure and superconducting properties

PtBi$_2$ is a polymorphic system with interesting electronic properties. Here we report optimized crystal growth and structural characterization of pyrite-type and trigonal modification of PtBi$_2$. Selected area electron diffraction, X-ray powder diffraction and further Rietveld refinement confirms that trigonal PtBi$_2$ crystallizes in non-centrosymmetric $P31m$ space group, pyrite-type PtBi$_2$ in $Pa\bar{3}$ space group. Series of Pt$_{1-x}$Rh$_x$Bi$_2$ samples was obtained for $x=0, 0.03, 0.35$ in the trigonal PtBi$_2$ structure. These Pt$_{1-x}$Rh$_x$Bi$_2$ compounds become superconducting where critical temperature increases from $T_c=600$ mK for $x=0$ up to $T_c=2.7$ K for $x=0.35$. Furthermore we calculate the electronic band structure, using the structure parameters obtained. The calculated density of states (DOS) shows a minimum for the stochiometric compound at the Fermi level. These findings warrant further research by broader array of experimental techniques, as well as the effect of the substitution on the non-trivial band structure.

cond-mat.mtrl-sci

Enhanced critical temperatures in the strongly overdoped iron-based superconductors AFe$_2$As$_2$ (A = K, Cs, Rb) observed by point contacts

A remarkable several times increase (up to 10 K) of the superconducting critical temperature Tc has been observed in point contacts created on the base of single crystals AFe$_2$As$_2$ (A = K, Cs, Rb). Possible reasons for such a Tc increase in point contacts are briefly discussed on a qualitative level. Among them, it is most likely attributed to interfacial carrier doping and/or uniaxial non-homogeneous pressure arising when the contact is created.

cond-mat.supr-con

The incommensurate magnet iron monophosphide FeP: Crystal growth and characterization

We report an optimized chemical vapor transport method, which allows growing FeP single crystals up to 500 mg in mass and 80 $mm^{3}$ in volume. The high quality of the crystals obtained by this method was confirmed by means of EDX, high-resolution TEM, low-temperature single crystal XRD and neutron diffraction experiments. We investigated the transport and magnetic properties of the single crystals and calculated the electronic band structure of FeP. We show both theoretically and experimentally, that the ground state of FeP is metallic. The examination of the magnetic data reveals antiferromagnetic order below T$_{N}$ =119 K while transport remains metallic in both the paramagnetic and the antiferromagnetic phase. The analysis of the neutron diffraction data shows an incommensurate magnetic structure with the propagation vector Q=(0, 0, $\pmδ$), where $δ$ $\sim$ 0.2. For the full understanding of the magnetic state, further experiments are needed. The successful growth of large high-quality single crystals opens the opportunity for further investigations of itinerant magnets with incommensurate spin structures using a wide range of experimental tools.

cond-mat.mtrl-sci

Phase tunable second-order topological superconductor

Two-dimensional second-order topological superconductors (SOTSCs) have gapped bulk and edge states, with zero-energy Majorana bound states localized at corners. Motivated by recent advances in Majorana nanowire experiments, we propose to realize a tunable SOTSC as a two-dimensional nanowire array. We show that the coupling between the Majorana modes of adjacent wires can be controlled by phase-biasing the device, allowing to access a variety of topological phases. We characterize the system using scattering theory, which provides access to its transport properties and its topological invariants. The setup is robust against disorder, both in the nanowires themselves and in the Josephson junctions formed between adjacent wires. Further, we identify a parameter regime in which an initially trivial system is rendered topological upon adding disorder, providing an example of a second-order topological Anderson phase.

cond-mat.mes-hall