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D. V. S. Muthu

Publications and source records attributed to D. V. S. Muthu.

34 records · Page 2Linked to original sources

Raman Signatures of Strong Kitaev Exchange Correlations in (Na$_{1-x}$Li$_x$)$_2$IrO$_3$ : Experiments and Theory

Inelastic light scattering studies on single crystals of (Na$_{1-x}$Li$_x$)$_2$IrO$_3$ ($x = 0, 0.05$ and $0.15$) show a polarization independent broad band at $\sim $~2750 cm$^{-1}$ with a large band-width $\sim 1800$~cm$^{-1}$. For Na$_2$IrO$_3$ the broad band is seen for temperatures $ \leq 200$~K and persists inside the magnetically ordered state. For Li doped samples, the intensity of this mode increases, shifts to lower wave-numbers and persists to higher temperatures. Such a mode has recently been predicted (Knolle et.al.) as a signature of the Kitaev spin liquid. We assign the observation of the broad band to be a signature of strong Kitaev-exchange correlations. The fact that the broad band persists even inside the magnetically ordered state suggests that dynamically fluctuating moments survive even below $T_{N}$. This is further supported by our mean field calculations. The Raman response calculated in mean field theory shows that the broad band predicted for the spin liquid state survives in the magnetically ordered state near the zigzag-spin liquid phase boundary. A comparison with the theoretical model gives an estimate of the Kitaev exchange interaction parameter to be $J_K\approx 57$~meV.

cond-mat.str-el↗

Electron-Hole Asymmetry in the Electron-phonon Coupling in Top-gated Phosphorene Transistor

Using in-situ Raman scattering from phosphorene channel in an electrochemically top-gated field effect transistor, we show that its phonons with A$_g$ symmetry depend much more strongly on concentration of electrons than that of holes, while the phonons with B$_g$ symmetry are insensitive to doping. With first-principles theoretical analysis, we show that the observed electon-hole asymmetry arises from the radically different constitution of its conduction and valence bands involving $π$ and $σ$ bonding states respectively, whose symmetry permits coupling with only the phonons that preserve the lattice symmetry. Thus, Raman spectroscopy is a non-invasive tool for measuring electron concentration in phosphorene-based nanoelectronic devices.

cond-mat.mes-hall↗

Phonon Anomalies, Orbital-Ordering and Electronic Raman Scattering in iron-pnictide Ca(Fe0.97Co0.03)2As2: Temperature-dependent Raman Study

We report inelastic light scattering studies on Ca(Fe0.97Co0.03)2As2 in a wide spectral range of 120-5200 cm-1 from 5K to 300K, covering the tetragonal to orthorhombic structural transition as well as magnetic transition at Tsm ~ 160K. The mode frequencies of two first-order Raman modes B1g and Eg, both involving displacement of Fe atoms, show sharp increase below Tsm. Concomitantly, the linewidths of all the first-order Raman modes show anomalous broadening below Tsm, attributed to strong spin-phonon coupling. The high frequency modes observed between 400-1200 cm-1 are attributed to the electronic Raman scattering involving the crystal field levels of d-orbitals of Fe2+. The splitting between xz and yz d-orbital levels is shown to be ~ 25 meV which increases as temperature decreases below Tsm. A broad Raman band observed at ~ 3200 cm-1 is assigned to two-magnon excitation of the itinerant Fe 3d antiferromagnet.

cond-mat.supr-con↗

Temperature dependent magnetic, dielectric and Raman studies of partially disordered La2NiMnO6

We report a detailed magnetic, dielectric and Raman studies on partially disordered and biphasic double perovskite La2NiMnO6. DC and AC magnetic susceptibility measurements show two magnetic anomalies at TC1 ~ 270 K and TC2 ~ 240 K, which may indicate the ferromagnetic ordering of the monoclinic and rhombohedral phases, respectively. A broad peak at a lower temperature (Tsg ~ 70 K) is also observed indicating a spin-glass transition due to partial anti-site disorder of Ni2+ and Mn4+ ions. Unlike the pure monoclinic phase, the biphasic compound exhibits a broad but a clear dielectric anomaly around 270 K which is a signature of magneto-dielectric effect. Temperature-dependent Raman studies between the temperature range 12 K to 300 K in a wide spectral range from 220 cm-1 to 1530 cm-1 reveal a strong renormalization of the first as well as second-order Raman modes associated with the (Ni/Mn)O6 octahedra near TC1 implying a strong spin-phonon coupling. In addition, an anomaly is seen in the vicinity of spin-glass transition temperature in the temperature dependence of the frequency of the anti-symmetric stretching vibration of the octahedra.

cond-mat.mtrl-sci↗

Raman evidence for coupling of superconducting quasi-particles with a phonon and crystal field excitation in superconductor Ce0.6Y0.4FeAsO0.8F0.2

We report inelastic light scattering experiments on superconductor Ce0.6Y0.4FeAsO0.8F0.2 from 4K to 300K covering the superconducting transition temperature Tc ~ 48.6K. A strong evidence of the superconductivity induced phonon renormalization for the A1g phonon mode near 150 cm-1 associated with the Ce/Y vibrations is observed as reflected in the anomalous red-shift and decrease in the linewidth below Tc. Invoking the coupling of this mode with the superconducting gap, the superconducting gap (2) at zero temperature is estimated to be ~ 20 meV i.e the ratio is ~ 5, suggesting Ce0.6Y0.4FeAsO0.8F0.2 to belong to the class of strong coupling superconductors. In addition, the mode near 430 cm-1 associated with Ce3+ crystal field excitation also shows anomalous increase in its linewidth below Tc suggesting strong coupling between crystal field excitation and the superconducting quasi-particles. Our observations of two high frequency modes (S9 and S10) evidence the non-degenerate nature of Fe2+ dxz/yz orbitals suggesting the electronic nematicity in these systems.

cond-mat.mtrl-sci↗

Sharp Raman Anomalies and Broken Adiabaticity at a Pressure Induced Transition from Band to Topological Insulator in Sb2Se3

The nontrivial electronic topology of a topological insulator is thus far known to display signatures in a robust metallic state at the surface. Here, we establish vibrational anomalies in Raman spectra of the bulk that signify changes in electronic topology: an E2 g phonon softens unusually and its linewidth exhibits an asymmetric peak at the pressure induced electronic topological transition (ETT) in Sb2Se3 crystal. Our first-principles calculations confirm the electronic transition from band to topological insulating state with reversal of parity of electronic bands passing through a metallic state at the ETT, but do not capture the phonon anomalies which involve breakdown of adiabatic approximation due to strongly coupled dynamics of phonons and electrons. Treating this within a four-band model of topological insulators, we elucidate how nonadiabatic renormalization of phonons constitutes readily measurable bulk signatures of an ETT, which will facilitate efforts to develop topological insulators by modifying a band insulator.

cond-mat.mtrl-sci↗

Symmetry-dependent phonon renormalization in monolayer MoS2 transistor

Strong electron-phonon interaction which limits electronic mobility of semiconductors can also have significant effects on phonon frequencies. The latter is the key to the use of Raman spectroscopy for nondestructive characterization of doping in graphene-based devices. Using in-situ Raman scattering from single layer MoS$_2$ electrochemically top-gated field effect transistor (FET), we show softening and broadening of A$_{1g}$ phonon with electron doping whereas the other Raman active E$_{2g}^{1}$ mode remains essentially inert. Confirming these results with first-principles density functional theory based calculations, we use group theoretical arguments to explain why A$_{1g}$ mode specifically exhibits a strong sensitivity to electron doping. Our work opens up the use of Raman spectroscopy in probing the level of doping in single layer MoS$_2$-based FETs, which have a high on-off ratio and are of enormous technological significance.

cond-mat.mtrl-sci↗

Superconducting Fluctuations and Anomalous Phonon Renormalization much above superconducting transition temperature in Ca4Al2O5.7Fe2As2

Raman studies on Ca4Al2O5.7Fe2As2 superconductor in the temperature range of 5 K to 300 K, covering the superconducting transition temperature Tc ~ 28.3 K, reveal that the Raman mode at ~ 230 cm-1 shows a sharp jump in frequency by ~ 2 % and linewidth increases by ~ 175 % at To ~ 60 K. Below To, anomalous softening of the mode frequency and a large decrease by ~ 10 cm-1 in the linewidth is observed. These precursor effects at T0 (~ 2Tc) are attributed to significant superconducting fluctuations, possibly enhanced due to reduced dimensionality arising from weaked coupling between the well separated (~ 15 Å) Fe-As layers in the unit cell. A large blue-shift of the mode frequency between 300 K to 60 K (~7%) indicates strong spin-phonon coupling in this superconductor.

cond-mat.supr-con↗

Coupled Phonons, Magnetic Excitations and Ferroelectricity in AlFeO3: Raman and First-principles Studies

We determine the nature of coupled phonons and magnetic excitations in AlFeO3 using inelastic light scattering from 5 K to 315 K covering a spectral range from 100-2200 cm-1 and complementary first-principles density functional theory-based calculations. A strong spin-phonon coupling and magnetic ordering induced phonon renormalization are evident in (a) anomalous temperature dependence of many modes with frequencies below 850 cm-1, particularly near the magnetic transition temperature Tc ~ 250 K, (b) distinct changes in band positions of high frequency Raman bands between 1100-1800 cm-1, in particular a broad mode near 1250 cm-1 appears only below Tc attributed to the two-magnon Raman scattering. We also observe weak anomalies in the mode frequencies at ~ 100 K, due to a magnetically driven ferroelectric phase transition. Understanding of these experimental observations has been possible on the basis of first-principles calculations of phonons spectrum and their coupling with spins.

cond-mat.str-el↗

Temperature-dependent Raman study of CeFeAsO0.9F0.1 Superconductor: Crystal field excitations, phonons and their coupling

We report temperature-dependent Raman spectra of CeFeAsO0.9F0.1 from 4 K to 300 K in spectral range of 60 to 1800 cm-1 and interpret them using estimates of phonon frequencies obtained from first-principles density functional calculations. We find evidence for a strong coupling between the phonons and crystal field excitations; in particular Ce3+ crystal field excitation at 432 cm-1 couples strongly with Eg oxygen vibration at 389 cm-1 . Below the superconducting transition temperature, the phonon mode near 280 cm-1 shows softening, signaling its coupling with the superconducting gap. The ratio of the superconducting gap to Tc thus estimated to be ~ 10 suggests CeFeAsO0.9F0.1 as a strong coupling superconductor. In addition, two high frequency modes observed at 1342 cm-1 and 1600 cm-1

cond-mat.supr-con↗

Raman Evidence for Superconducting Gap and Spin-Phonon Coupling in Superconductor Ca(Fe0.95Co0.05)2As2

Inelastic light scattering studies on single crystal of electron-doped Ca(Fe0.95Co0.05)2As2 superconductor, covering the tetragonal to orthorhombic structural transition as well as magnetic transition at TSM ~ 140 K and superconducting transition temperature Tc ~ 23 K, reveal evidence for superconductivity-induced phonon renormalization; in particular the phonon mode near 260 cm-1 shows hardening below Tc, signaling its coupling with the superconducting gap. All the three Raman active phonon modes show anomalous temperature dependence between room temperature and Tc i.e phonon frequency decreases with lowering temperature. Further, frequency of one of the modes shows a sudden change in temperature dependence at TSM. Using first-principles density functional theory-based calculations, we show that the low temperature phase (Tc < T < TSM) exhibits short-ranged stripe anti-ferromagnetic ordering, and estimate the spin-phonon couplings that are responsible for these phonon anomalies.

cond-mat.supr-con↗

Raman signatures of pressure induced electronic topological and structural transitions in Bi2Te3

We report Raman signatures of electronic topological transition (ETT) at 3.6 GPa and rhombohedral (α-Bi2Te3) to monoclinic (β-Bi2Te3) structural transition at ~ 8 GPa. At the onset of ETT, a new Raman mode appears near 107 cm-1 which is dispersionless with pressure. The structural transition at ~ 8 GPa is marked by a change in pressure derivative of A1g and Eg mode frequencies as well as by appearance of new modes near 115 cm-1and 135 cm-1. The mode Grüneisen parameters are determined in both the α and β-phases.

cond-mat.mtrl-sci↗

Anomalous Raman scattering from phonons and electrons of superconducting FeSe$_{0.82}$

We report interesting anomalies in the temperature dependent Raman spectra of FeSe$_{0.82}$ measured from 3K to 300K in the spectral range from 60 to 1800 cm$^{-1}$ and determine their origin using complementary first-principles density functional calculations. A phonon mode near 100 cm$^{-1}$ exhibits a sharp increase by $\sim$ 5% in frequency below a temperature T$_s$ ($\sim$ 100 K) attributed to strong spin-phonon coupling and onset of short-range antiferromagnetic order. In addition, two high frequency modes are observed at 1350 cm$^{-1}$ and 1600 cm$^{-1}$, attributed to electronic Raman scattering from ($x^2-y^2$)to $xz$ / $yz$ $d$-orbitals of Fe.

cond-mat.supr-con↗

Raman evidence for Orbiton-Mediated Multiphonon Scattering in Multiferroic TbMnO$_3$

Temperature-dependent Raman spectra of TbMnO$_3$ from 5 K to 300 K in the spectral range of 200 to 1525 cm$^{-1}$ show five first-order Raman allowed modes and two high frequency modes. The intensity ratio of the high frequency Raman band to the corresponding first order Raman mode is nearly constant and high ($\sim$ 0.6) at all temperatures, suggesting a orbiton-phonon mixed nature of the high frequency mode. One of the first order phonon modes shows anomalous softening below T$_N$ ($\sim$ 46 K), suggesting a strong spin-phonon coupling.

cond-mat.str-el↗

Comparative High Pressure Raman Study of Boron Nitride Nanotubes and Hexagonal Boron Nitride

High pressure Raman experiments on Boron Nitride multi-walled nanotubes show that the intensity of the vibrational mode at ~ 1367 cm-1 vanishes at ~ 12 GPa and it does not recover under decompression. In comparison, the high pressure Raman experiments on hexagonal Boron Nitride show a clear signature of a phase transition from hexagonal to wurtzite at ~ 13 GPa which is reversible on decompression. These results are contrasted with the pressure behavior of carbon nanotubes and graphite.

cond-mat.mtrl-sci↗

Reversible Pressure-Induced Amorphization in Solid C70 : Raman and Photoluminescence Study

We have studied single crystals of $C_{70}$ by Raman scattering and photoluminescence in the pressure range from 0 to 31.1 GPa. The Raman spectrum at 31.1 GPa shows only a broad band similar to that of the amorphous carbon without any trace of the Raman lines of $C_{70}$. After releasing the pressure from 31.1 GPa, the Raman and the photoluminescence spectra of the recovered sample are that of the starting $C_{70}$ crystal. These results indicate that the $C_{70}$ molecules are stable upto 31.1 GPa and the amorphous carbon high pressure phase is reversible, in sharp contrast to the results on solid $C_{60}$. A qualitative explaination is suggested in terms of inter- versus intra-molecular interactions.

cond-mat↗