arXiv subjects

D. W. Horsell

Publications and source records attributed to D. W. Horsell.

12 recordsLinked to original sources

arXiv2012

Non-linear resistivity and heat dissipation in monolayer graphene

We have experimentally studied the nonlinear nature of electrical conduction in monolayer graphene devices on silica substrates. This nonlinearity manifests itself as a nonmonotonic dependence of the differential resistance on applied DC voltage bias across the sample. At temperatures below ~70K, the differential resistance exhibits a peak near zero bias that can be attributed to self-heating of the charge carriers. We show that the shape of this peak arises from a combination of different energy dissipation mechanisms of the carriers. The energy dissipation at higher carrier temperatures depends critically on the length of the sample. For samples longer than 10um the heat loss is shown to be determined by optical phonons at the silica-graphene interface.

cond-mat.mes-hall↗

arXiv2011

Evidence for spin memory in the electron phase coherence in graphene

We measure the dependence of the conductivity of graphene as a function of magnetic field, temperature and carrier density and discover a saturation of the dephasing length at low temperatures that we ascribe to spin memory effects. Values of the spin coherence length up to eight microns are found to scale with the mean free path. We consider different origins of this effect and suggest that it is controlled by resonant states that act as magnetic-like defects. By varying the level of disorder, we demonstrate that the spin coherence length can be tuned over an order of magnitude.

cond-mat.mes-hall↗

arXiv2011

Impurities as a source of flicker noise in graphene

We experimentally study the effect of different scattering potentials on the flicker noise observed in graphene devices on silica substrates. The noise in nominally identical devices is seen to behave in two distinct ways as a function of carrier concentration, changing either monotonically or nonmonotonically. We attribute this to the interplay between long- and short-range scattering mechanisms. Water is found to significantly enhance the noise magnitude and change the type of the noise behaviour. By using a simple model, we show that water is a source of long-range scattering.

cond-mat.mes-hall↗

arXiv2010

Hot phonon decay in supported and suspended exfoliated graphene

Near infrared pump-probe spectroscopy has been used to measure the ultrafast dynamics of photoexcited charge carriers in monolayer and multilayer graphene. We observe two decay processes occurring on 100 fs and 2 ps timescales. The first is attributed to the rapid electron-phonon thermalisation in the system. The second timescale is found to be due to the slow decay of hot phonons. Using a simple theoretical model we calculate the hot phonon decay rate and show that it is significantly faster in monolayer flakes than in multilayer ones. In contrast to recent claims, we show that this enhanced decay rate is not due to the coupling to substrate phonons, since we have also seen the same effect in suspended flakes. Possible intrinsic decay mechanisms that could cause such an effect are discussed.

cond-mat.mtrl-sci↗

arXiv2010

Electrochemical doping of graphene

The electrical properties of graphene are known to be modified by chemical species that interact with it. We investigate the effect of doping of graphene-based devices by toluene (C6H5CH3). We show that this effect has a complicated character. Toluene is seen to act as a donor, transferring electrons to the graphene. However, the degree of doping is seen to depend on the magnitude and polarity of an electric field applied between the graphene and a nearby electrode. This can be understood in terms of an electrochemical reaction mediated by the graphene crystal.

cond-mat.mtrl-sci↗

arXiv2009

Mesoscopic conductance fluctuations in graphene

We study fluctuations of the conductance of micron-sized graphene devices as a function of the Fermi energy and magnetic field. The fluctuations are studied in combination with analysis of weak localization which is determined by the same scattering mechanisms. It is shown that the variance of conductance fluctuations depends not only on inelastic scattering that controls dephasing but also on elastic scattering. In particular, contrary to its effect on weak localization, strong intervalley scattering suppresses conductance fluctuations in graphene. The correlation energy, however, is independent of the details of elastic scattering and can be used to determine the electron temperature of graphene structures.

cond-mat.mes-hall↗

arXiv2009

Quantum transport thermometry for electrons in graphene

We propose a method of measuring the electron temperature $T_e$ in mesoscopic conductors and demonstrate experimentally its applicability to micron-size graphene devices in the linear-response regime ($T_e\approx T$, the bath temperature). The method can be {especially useful} in case of overheating, $T_e>T$. It is based on analysis of the correlation function of mesoscopic conductance fluctuations. Although the fluctuation amplitude strongly depends on the details of electron scattering in graphene, we show that $T_e$ extracted from the correlation function is insensitive to these details.

cond-mat.mes-hall↗

arXiv2008

Conductance of p-n-p graphene structures with 'air-bridge' top gates

We have fabricated graphene devices with a top gate separated from the graphene layer by an air gap--a design which does not decrease the mobility of charge carriers under the gate. This gate is used to realise p-n-p structures where the conducting properties of chiral carriers are studied. The band profile of the structures is calculated taking into account the specifics of the graphene density of states and is used to find the resistance of the p-n junctions expected for chiral carriers. We show that ballistic p-n junctions have larger resistance than diffusive ones. This is caused by suppressed transmission of chiral carriers at angles away from the normal to the junction.

cond-mat.mes-hall↗

arXiv2008

Weak localisation in graphene flakes

We show that the manifestation of quantum interference in graphene is very different from that in conventional two-dimensional systems. Due to the chiral nature of charge carriers, it is sensitive not only to inelastic, phase-breaking scattering, but also to a number of elastic scattering processes. We study weak localization in different samples and at different carrier densities, including the Dirac region, and find the characteristic rates that determine it. We show how the shape and quality of graphene flakes affect the values of the elastic and inelastic rates and discuss their physical origin.

cond-mat.mes-hall↗

arXiv2007

Quantum interference in bilayer graphene

We report the first experimental study of the quantum interference correction to the conductivity of bilayer graphene. Low-field, positive magnetoconductivity due to the weak localisation effect is investigated at different carrier densities, including those around the electroneutrality region. Unlike conventional 2D systems, weak localisation in bilayer graphene is affected by elastic scattering processes such as intervalley scattering. Analysis of the dephasing determined from the magnetoconductivity is complemented by a study of the field- and density-dependent fluctuations of the conductance. Good agreement in the value of the coherence length is found between these two studies.

cond-mat.mes-hall↗

arXiv2007

Weak localisation in bilayer graphene

We have performed the first experimental investigation of quantum interference corrections to the conductivity of a bilayer graphene structure. A negative magnetoresistance - a signature of weak localisation - is observed at different carrier densities, including the electro-neutrality region. It is very different, however, from the weak localisation in conventional two-dimensional systems. We show that it is controlled not only by the dephasing time, but also by different elastic processes that break the effective time-reversal symmetry and provide invervalley scattering.

cond-mat.mes-hall↗

arXiv2004

Spontaneous current generation in gated nanostructures

We have observed an unusual dc current spontaneously generated in the conducting channel of a short-gated GaAs transistor. The magnitude and direction of this current critically depend upon the voltage applied to the gate. We propose that it is initiated by the injection of hot electrons from the gate that relax via phonon emission. The phonons then excite secondary electrons from asymmetrically distributed impurities in the channel, which leads to the observed current.

cond-mat.mes-hall↗