SearcharxivSearch

arXiv subjects

D. Yu. Usachov

Publications and source records attributed to D. Yu. Usachov.

5 recordsLinked to original sources

Self-Aligned Metallic-Semiconducting Phosphorus Nanoarrays Driven by Facet Engineering

Two-dimensional (2D) materials often require specific substrate terminations for epitaxial stabilization, yet the search for suitable templates has largely focused on low-index metal surfaces, which may not provide the optimal conditions for the growth of new phases. Here, we show that crystal-facet engineering on curved Cu surfaces enables the stabilization, within a single preparation step, of two distinct 2D phosphorus phases with different electronic properties. Hexagonal blue phosphorene forms on Cu(111) terraces, whereas a previously unreported skewed-square phosphorus phase is stabilized on Cu(513) facets. By combining complementary microscopy and spectroscopy techniques with theoretical calculations, we determine the structural and electronic properties of this new phase, which displays semiconducting character, in contrast to the metallic behavior of blue phosphorene. The coexistence of these two competing phases gives rise to a metal-to-semiconducting transition of the 2D phosphorus layer over the substrate. Locally, the competition between the two phases gives rise to self-aligned nanoarrays of alternating metallic and semiconducting phosphorus terraces. These results establish crystal-facet engineering as a practical route for discovering and stabilizing emergent 2D material phases on high-index substrates, while also enabling the engineering of nanostructures with tailored electronic properties through a simple and scalable growth process.

cond-mat.mtrl-sci

Insight into the electronic structure of the centrosymmetric skyrmion magnet GdRu$_2$Si$_2$

The discovery of a square magnetic-skyrmion lattice in GdRu$_2$Si$_2$, with the smallest so far found skyrmion diameter and without a geometrically frustrated lattice, has attracted significant attention, particularly for potential applications in memory devices and quantum computing. In this work, we present a comprehensive study of surface and bulk electronic structures of GdRu$_2$Si$_2$ by utilizing momentum-resolved photoemission (ARPES) measurements and first-principles calculations. We show how the electronic structure evolves during the antiferromagnetic transition when a peculiar helical order of 4$f$ magnetic moments within the Gd layers sets in. A nice agreement of the ARPES-derived electronic structure with the calculated one has allowed us to characterize the features of the Fermi surface (FS), unveil the nested region along the $k_z$ at the corner of the 3D FS, and reveal their orbital compositions. Our findings suggest that the Ruderman-Kittel-Kasuya-Yosida interaction plays a decisive role in stabilizing the spiral-like order of Gd 4$f$ moments responsible for the skyrmion physics in GdRu$_2$Si$_2$. Our results provide a deeper understanding of electronic and magnetic properties of this material, which is crucial for predicting and developing novel skyrmion-based devices.

cond-mat.mtrl-sci

Factors influencing the energy gap in topological states of antiferromagnetic MnBi$_2$Te$_4$

The experimentally measured angle-resolved photoemission dispersion maps for MnBi$_{2}$Te$_{4}$ samples, which show different energy gaps at the Dirac point (DP), are compared with the results of theoretical calculations to find the conditions for the best agreement between theory and experiment. We have analyzed different factors which influence the Dirac gap width: (i) the surface van der Waals (SvdW) distance between the first and second septuple layers (SLs), (ii) the magnetic moment on Mn atoms, (iii) the spin-orbit coupling (SOC) strength for the surface Te and Bi atoms and related changes in the localization of the topological surface states (TSSs). It was shown that all these factors may change the gap width at the DP in a wide range from 5 to $\sim$90~meV. We show that the Dirac gap variation is mainly determined by the corresponding changes in the TSSs spatial distribution. The best agreement between the presented experimental data (with the Dirac gaps between $\sim$15 and 55~meV) and the calculations takes place for a slightly compressed SvdW interval (of about -3.5~\% compared to the bulk value) with modified SOC for surface atoms (that can occur in the presence of various defects in the near-surface region). We show that upon changing the values of the SvdW interval and surface SOC strength the TSSs spatial distribution shifts between the SLs with opposite magnetizations, which leads to a non-monotonic change in the Dirac gap size.

cond-mat.mes-hall

Observation of a cubic Rashba effect in the surface spin structure of rare-earth ternary materials

Spin-orbit interaction and structure inversion asymmetry in combination with magnetic ordering is a promising route to novel materials with highly mobile spin-polarized carriers at the surface. Spin-resolved measurements of the photoemission current from the Si-terminated surface of the antiferromagnet TbRh2Si2 and their analysis within an ab initio one-step theory unveil an unusual triple winding of the electron spin along the fourfold-symmetric constant energy contours of the surface states. A two-band k.p model is presented that yields the triple winding as a cubic Rashba effect. The curious in-plane spin-momentum locking is remarkably robust and remains intact across a paramagnetic-antiferromagnetic transition in spite of spin-orbit interaction on Rh atoms being considerably weaker than the out-of-plane exchange field due to the Tb 4f moments.

cond-mat.mes-hall

Boron nitride monolayer growth on vicinal Ni(111) surfaces systematically studied with a curved crystal

The structural and electronic properties of hexagonal boron nitride (hBN) grown on stepped Ni surfaces are systematically investigated using a cylindrical Ni crystal as a tunable substrate. Our experiments reveal homogeneous hBN monolayer coating of the entire Ni curved surface, which in turn undergoes an overall faceting. The faceted system is defined by step-free hBN/Ni(111) terraces alternating with strongly tilted hBN/Ni(115) or hBN/Ni(110) nanostripes, depending on whether we have A-type or B-type vicinal surfaces, respectively. Such deep substrate self-organization is explained by both the rigidity of the hBN lattice and the lack of registry with Ni crystal planes in the vicinity of the (111) surface. The analysis of the electronic properties by photoemission and absorption spectroscopies reveal a weaker hBN/Ni interaction in (110)- and (115)-oriented facets, as well as an upward shift of the valence band with respect to the band position at the hBN/Ni(111) terrace.

cond-mat.mtrl-sci