arXiv subjects

D. Zito

Publications and source records attributed to D. Zito.

3 recordsLinked to original sources

arXiv2024

Cryogenic Compact mm-Wave Broadband SPST Switch in 22nm FDSOI CMOS for Monolithic Quantum Processors

This paper reports the experimental characterization at the cryogenic temperature of a compact mm-wave broadband single-pole single-throw (SPST) switch in 22nm FDSOI CMOS technology. The switch consists of two n-MOSFETs with a special device option to reduce the substrate parasitic effects, and a third n-MOSFET to improve isolation. Unlike prior wideband mm-wave switches, it does not require any large passive components, allowing a very compact design, low loss and high isolation performance. The cryogenic measurements at 2 K show an insertion loss lower than 2.3 dB, an isolation better than 25.3 dB, and the return loss better than -11.5 dB, over the entire frequency range from DC to 70 GHz.

quant-ph↗

arXiv2024

Cryogenic Compact Low-Power 60GHz Amplifier for Spin Qubit Control in Monolithic Silicon Quantum Processors

This paper reports the design and experimental characterization of a cryogenic compact low-power 60GHz amplifier for control of electron/hole spin qubits, as elementary building block for monolithic Si quantum processors. Tested at 2 K, the amplifier exhibits S21 of 15 dB at 59 GHz, BW3dB of 52.5-67.5 GHz, and power consumption of 2.16 mW. Owing to the topology with inductorless active network, the amplifier has a compact core area of 0.18 x 0.19 mm2.

quant-ph↗

arXiv2024

Sub-mW 30GHz Variable-Gain LNA in 22nm FDSOI CMOS for Low-Power Tapered mm-Wave 5G/6G Phased-Array Receivers

Next-generation cellular systems require low-power mm-wave phased-array ICs. Variable-gain LNAs (VG-LNAs) are key blocks enabling reduced hardware complexity, performance improvement and added functionalities. This paper reports a low-power 30GHz VG-LNA for mm-wave 5G/6G phased-array ICs, with a gain control of 8 dB for 18dB Taylor taper in a 30GHz 8x8 antenna array. The VG-LNA exhibits a peak gain of 16 dB in the high-gain state, consumes less than 1 mW and occupies an area of 0.20 x 0.22 mm2.

eess.SP↗