arXiv subjects

Dacen Waters

Publications and source records attributed to Dacen Waters.

At least 19 recordsLinked to original sources

arXiv2026

Signatures of a ferro-Josephson effect in twisted graphene

When a spin-polarized current is driven across a magnetic domain wall, the resulting spin-transfer torque may, beyond a critical threshold, set the wall's moments into precession. This precession modulates the Berry curvature experienced by electrons traversing the wall, producing an electromotive force that is topological in nature and proportional to the precession frequency, mapping precisely onto the DC Josephson effect and leading to the name ferro-Josephson effect. We report signatures consistent with this effect in a twisted graphene van der Waals heterostructure, where spin and valley textures are linked by exchange, Hund's coupling, and spin-orbit interactions. Tuned to fillings where the isospin degeneracy is spontaneously broken, the samples develop a sharp peak in the longitudinal resistance within a fraction of a millitesla of $B_\parallel=0$---a peak that disappears as the current is reduced toward zero. In differential resistance the feature resolves into sharp resonances that disperse with $B_\parallel$ on microtesla and picoampere scales. We argue that these arise from the current-driven precession of spin-domain-wall moments, in competition with the in-plane anisotropy set by a minuscule applied field, and that they establish nonlinear transport as a sensitive probe of isospin domain-wall dynamics at energy scales far below $k_BT$.

cond-mat.mes-hall↗

arXiv2026

Valleytronics in 2D Materials Roadmap

Valleytronics exploits non-equivalent energy extrema in the electronic band structure of crystalline solids -- the valley degree of freedom -- to encode, manipulate, and read out information. The advent of 2D materials, first graphene and then transition-metal dichalcogenides, made valley control practical through optical, electrical, and magnetic routes. This foundation has enabled remarkable progress in recent years spanning established frontiers, such as valley exciton physics and valley Hall effects, as well as emerging directions including lightwave valleytronics, nanophotonic integration, flat-band valleytronics, and spin-valley qubits. In parallel, there are sustained efforts to scale up valleytronic materials and to predict new valleytronic platforms. This Roadmap brings together perspectives from leading experts to chart the key opportunities and challenges at the forefront of 2D material valleytronics. Each section captures a snapshot of progress in a key research area, identifies critical open challenges, and outlines pathways toward future valleytronics breakthroughs.

cond-mat.mes-hall↗

arXiv2025

Single-gate tracking behavior in flat-band multilayer graphene devices

A central feature of many van der Waals (vdW) materials is the ability to precisely control their charge doping, $n$, and electric displacement field, $D$, using top and bottom gates. For devices composed of only a few layers, it is commonly assumed that $D$ causes the layer-by-layer potential to drop linearly across the structure. Here, we show that this assumption fails for a broad class of crystalline and moir\'e vdW structures based on Bernal- or rhombohedral-stacked multilayer graphene. We find that the electronic properties at the Fermi level are largely dictated by special layer-polarized states arising at Bernal-stacked crystal faces, which typically coexist in the same band with layer-delocalized states. We uncover a novel mechanism by which the layer-delocalized states completely screen the layer-polarized states from the bias applied to the remote gate. This screening mechanism leads to an unusual scenario where voltages on either gate dope the band as expected, yet the band dispersion and associated electronic properties remain primarily (and sometimes exclusively) governed by the gate closer to the layer-polarized states. Our results reveal a novel electronic mechanism underlying the atypical single-gate-controlled transport characteristics observed across many flat-band graphitic structures, and provide key theoretical insights essential for accurately modeling these systems.

cond-mat.mes-hall↗

arXiv2024

On the origin of anomalous hysteresis in graphite/boron nitride transistors

Field-effect devices constructed by stacking flakes of van der Waals (vdW) materials, with hexagonal boron nitride (hBN) playing the role of gate dielectric, often exhibit virtually no hysteresis in their characteristics. This permits exquisitely detailed studies of diverse gate-voltage-tuned phenomena in vdW devices. Recently, however, a dramatic form of gate hysteresis, sometimes called the "gate doesn't work" (GDW) or "electron ratchet" effect, has been seen in certain individual vdW devices that seem otherwise unexceptional. When it occurs, this hysteresis phenomenon is striking and robust, yet it is difficult to reliably reproduce between devices and, largely as a result, its origin remains disputed. Most devices where it has been seen have a bilayer graphene channel and nominal rotational alignment between the graphene and hBN, which has engendered explanations based on properties of bilayer graphene combined with moir\'e effects. Here, we report our studies of the phenomenon observed in devices that have multilayer graphene channels. We find that the effect can occur in devices with graphite channels that have many more than two graphene layers, in which case it is unambiguously associated with just one surface of the graphite. It can also survive to room temperature, occur in the absence of intentional rotational alignment with hBN, persist when a monolayer of WSe2 is inserted between the graphene and hBN, and exhibit continuous relaxation on timescales of hours or longer. These observations impose strong constraints on the origin of this puzzling phenomenon, which has exciting potential applications if it can be mastered.

cond-mat.mes-hall↗

arXiv2024

Interplay of electronic crystals with integer and fractional Chern insulators in moir\'e pentalayer graphene

The rapid development of moir\'e quantum matter has recently led to the remarkable discovery of the fractional quantum anomalous Hall effect, and sparked predictions of other novel correlation-driven topological states. Here, we investigate the interplay of electronic crystals with integer and fractional Chern insulators in a moir\'e lattice of rhomobohedral pentalayer graphene (RPG) aligned with hexagonal boron nitride. At a doping of one electron per moir\'e unit cell, we see a correlated insulator with a Chern number that can be tuned between $C=0$ and $+1$ by an electric displacement field, accompanied by an array of other such insulators formed at fractional band fillings, $\nu$. Collectively, these states likely correspond to trivial and topological electronic crystals, some of which spontaneously break the discrete translational symmetry of the moir\'e lattice. Upon applying a modest magnetic field, a narrow region forms around $\nu=2/3$ in which transport measurements imply the emergence of a fractional Chern insulator, along with hints of weaker states at other fractional $\nu$. In the same sample, we also see a unique sequence of incipient Chern insulators arising over a broad range of incommensurate band filling near two holes per moir\'e unit cell. Our results establish moir\'e RPG as a fertile platform for studying the competition and potential intertwining of electronic crystallization and topological charge fractionalization.

cond-mat.mes-hall↗

arXiv2024

Topological electronic crystals in twisted bilayer-trilayer graphene

In a dilute two-dimensional electron gas, Coulomb interactions can stabilize the formation of a Wigner crystal. Although Wigner crystals are topologically trivial, it has been predicted that electrons in a partially-filled band can break continuous translational symmetry and time-reversal symmetry spontaneously to form a form of topological electron crystal known as an anomalous Hall crystal. Here, we report the observation of a generalized version of the anomalous Hall crystal in twisted bilayer-trilayer graphene, whose formation is driven by the moire potential. The crystal forms at a band filling factor of one electron per four moir\'e unit cells ($\nu=1/4$) and quadruples the unit-cell area, coinciding with an integer quantum anomalous Hall effect. The Chern number of the state is exceptionally tunable, and can be switched reversibly between $+1$ and $-1$ by electric and magnetic fields. Several other topological electronic crystals arise in a modest magnetic field, originating from $\nu=1/3$, $1/2$, $2/3$, and $3/2$. The quantum geometry of the folded bands is likely very different from that of the original parent band, enabling possible future discoveries of correlation-driven topological phenomena

cond-mat.mes-hall↗

arXiv2024

Topological flat bands in a family of multilayer graphene moir\'e lattices

Moir\'e materials host a wealth of intertwined correlated and topological states of matter, all arising from flat electronic bands with nontrivial quantum geometry. A prominent example is the family of alternating-twist magic-angle graphene stacks, which exhibit symmetry-broken states at rational fillings of the moir\'e band and superconductivity close to half filling. Here, we introduce a second family of twisted graphene multilayers made up of twisted sheets of $M$- and $N$-layer Bernal-stacked graphene flakes. Calculations indicate that applying an electric displacement field isolates a flat and topological moir\'e conduction band that is primarily localized to a single graphene sheet below the moir\'e interface. Phenomenologically, the result is a striking similarity in the hierarchies of symmetry-broken phases across this family of twisted graphene multilayers. Our results show that this family of structures offers promising new opportunities for the discovery of exotic new correlated and topological phenomena, enabled by using the layer number to fine tune the flat moir\'e band and its screening environment.

cond-mat.mes-hall↗

arXiv2022

Mixed-dimensional moiré systems of graphitic thin films with a twisted interface

Moiré patterns formed by stacking atomically-thin van der Waals crystals with a relative twist angle can give rise to dramatic new physical properties. The study of moiré materials has so far been limited to structures comprising no more than a few vdW sheets, since a moiré pattern localized to a single two-dimensional interface is generally assumed to be incapable of appreciably modifying the properties of a bulk three-dimensional crystal. Layered semimetals such as graphite offer a unique platform to challenge this paradigm, owing to distinctive properties arising from their nearly-compensated electron and hole bulk doping. Here, we perform transport measurements of dual-gated devices constructed by slightly rotating a monolayer graphene sheet atop a thin bulk graphite crystal. We find that the moiré potential transforms the electronic properties of the entire bulk graphitic thin film. At zero and small magnetic fields, transport is mediated by a combination of gate-tunable moiré and graphite surface states, as well as coexisting semimetallic bulk states that do not respond to gating. At high field, the moiré potential hybridizes with the graphitic bulk states owing to the unique properties of the two lowest Landau bands of graphite. These Landau bands facilitate the formation of a single quasi-two-dimensional hybrid structure in which the moiré and bulk graphite states are inextricably mixed. Our results establish twisted graphene-graphite as the first in a new class of mixed-dimensional moiré materials.

cond-mat.mes-hall↗

arXiv2020

An unexplored MBE growth mode reveals new properties of superconducting NbN

Accessing unexplored conditions in crystal growth often reveals remarkable surprises and new regimes of physical behavior. In this work, performing molecular beam epitaxy of the technologically important superconductor NbN at temperatures greater than 1000$^\circ$C, higher than in the past, is found to reveal persistent RHEED oscillations throughout the growth, atomically smooth surfaces, normal metal resistivities as low as 37$μΩ$-cm and superconducting critical temperatures in excess of 15 K. Most remarkably, a reversal of the sign of the Hall coefficient is observed as the NbN films are cooled, and the high material quality allows the first imaging of Abrikosov vortex lattices in this superconductor.

cond-mat.mtrl-sci↗

arXiv2020

Quantum spin Hall edge states and interlayer coupling in twisted-bilayer WTe$_2$

The quantum spin Hall (QSH) effect, characterized by topologically protected spin-polarized edge states, was recently demonstrated in monolayers of the transition metal dichalcogenide (TMD) WTe$_2$. However, the robustness of this topological protection remains largely unexplored in van der Waals heterostructures containing one or more layers of a QSH insulator. In this work, we use scanning tunneling microscopy and spectroscopy (STM/STS) to explore the topological nature of twisted bilayer (tBL) WTe$_2$ which is produce from folded monolayers, as well as, tear-and-stack fabrication. At the tBL bilayer edge, we observe the characteristic spectroscopic signature of the QSH edge state that is absent in topologically trivial as-grown bilayer. For small twist angles, a rectangular moir\'e pattern develops, which results in local modifications of the band structure. Using first principles calculations, we quantify the interactions in tBL WTe$_2$ and its topological edge states as function of interlayer distance and conclude that it is possible to tune the topology of WTe$_2$ bilayers via the twist angle as well as interlayer interactions.

cond-mat.mes-hall↗

arXiv2020

Photo-physics and electronic structure of lateral graphene/MoS2 and metal/MoS2 junctions

Integration of semiconducting transition metal dichalcogenides (TMDs) into functional optoelectronic circuitries requires an understanding of the charge transfer across the interface between the TMD and the contacting material. Here, we use spatially resolved photocurrent microscopy to demonstrate electronic uniformity at the epitaxial graphene/molybdenum disulfide (EG/MoS2) interface. A 10x larger photocurrent is extracted at the EG/MoS2 interface when compared to metal (Ti/Au) /MoS2 interface. This is supported by semi-local density-functional theory (DFT), which predicts the Schottky barrier at the EG/MoS2 interface to be ~2x lower than Ti/MoS2. We provide a direct visualization of a 2D material Schottky barrier through combination of angle resolved photoemission spectroscopy with spatial resolution selected to be ~300 nm (nano-ARPES) and DFT calculations. A bending of ~500 meV over a length scale of ~2-3 micrometer in the valence band maximum of MoS2 is observed via nano-ARPES. We explicate a correlation between experimental demonstration and theoretical predictions of barriers at graphene/TMD interfaces. Spatially resolved photocurrent mapping allows for directly visualizing the uniformity of built-in electric fields at heterostructure interfaces, providing a guide for microscopic engineering of charge transport across heterointerfaces. This simple probe-based technique also speaks directly to the 2D synthesis community to elucidate electronic uniformity at domain boundaries alongside morphological uniformity over large areas.

physics.app-ph↗

arXiv2020

Flatbands and Mechanical Deformation Effects in the Moiré Superlattice of MoS$_2$-WSe$_2$ Heterobilayers

It has recently been shown that quantum-confined states can appear in epitaxially grown van der Waals material heterobilayers without a rotational misalignment ($θ=0^\circ$), associated with flat bands in the Brillouin zone of the moiré pattern formed due to the lattice mismatch of the two layers. Peaks in the local density of states and confinement in a MoS$_2$/WSe$_2$ system was qualitatively described only considering local stacking arrangements, which cause band edge energies to vary spatially. In this work, we report the presence of large in-plane strain variation across the moiré unit cell of a $θ=0^\circ$ MoS$_2$/WSe$_2$ heterobilayer, and show that inclusion of strain variation and out-of-plane displacement in density functional theory calculations greatly improves their agreement with the experimental data. We further explore the role of twist-angle by showing experimental data for a twisted MoS$_2$/WSe$_2$ heterobilayer structure with twist angle of $θ=15^\circ$, that exhibits a moiré pattern but no confinement.

cond-mat.mtrl-sci↗

arXiv2019

Proximity-induced superconducting gap in the quantum spin Hall edge state of monolayer WTe$_2$

The quantum spin Hall (QSH) state was recently demonstrated in monolayers of the transition metal dichalcogenide 1T'-WTe$_2$ and is characterized by a band gap in the two-dimensional (2D) interior and helical one-dimensional (1D) edge states. Inducing superconductivity in the helical edge states would result in a 1D topological superconductor, a highly sought-after state of matter. In the present study, we use a novel dry-transfer flip technique to place atomically-thin layers of WTe$_2$ on a van der Waals superconductor, NbSe$_2$. Using scanning tunneling microscopy and spectroscopy (STM/STS), we demonstrate atomically clean surfaces and interfaces and the presence of a proximity-induced superconducting gap in the WTe$_2$ for thicknesses from a monolayer up to 7 crystalline layers. At the edge of the WTe$_2$ monolayer, we show that the superconducting gap coexists with the characteristic spectroscopic signature of the QSH edge state. Taken together, these observations provide conclusive evidence for proximity-induced superconductivity in the QSH edge state in WTe$_2$, a crucial step towards realizing 1D topological superconductivity and Majorana bound states in this van der Waals material platform.

cond-mat.mes-hall↗

arXiv2018

Quantum-Confined Electronic States arising from Moiré Pattern of MoS2-WSe2 Hetero-bilayers

A two-dimensional (2D) hetero-bilayer system consisting of MoS2 on WSe2, deposited on epitaxial graphene, is studied by scanning tunneling microscopy and spectroscopy at temperatures of 5 and 80 K. A moiré pattern is observed, arising from lattice mismatch of 3.7% between the MoS2 and WSe2. Significant energy shifts are observed in tunneling spectra observed at the maxima of the moiré corrugation, as compared with spectra obtained at corrugation minima, consistent with prior work. Furthermore, at the minima of the moiré corrugation, sharp peaks in the spectra at energies near the band edges are observed, for spectra acquired at 5 K. The peaks correspond to discrete states that are confined within the moiré unit cells. Conductance mapping is employed to reveal the detailed structure of the wave functions of the states. For measurements at 80 K, the sharp peaks in the spectra are absent, and conductance maps of the band edges reveal little structure.

cond-mat.mes-hall↗

arXiv2017

The properties of the first galaxies in the BLUETIDES simulation

We employ the very large cosmological hydrodynamical simulation BLUETIDES to investigate the predicted properties of the galaxy population during the epoch of reionisation ($z>8$). BLUETIDES has a resolution and volume ($(400/h\approx 577)^{3}\,{\rm cMpc^3}$) providing a population of galaxies which is well matched to depth and area of current observational surveys targeting the high-redshift Universe. At $z=8$ BLUETIDES includes almost 160,000 galaxies with stellar masses $>10^{8}\,{\rm M_{\odot}}$. The population of galaxies predicted by BLUETIDES closely matches observational constraints on both the galaxy stellar mass function and far-UV ($150\,{\rm nm}$) luminosity function. Galaxies in BLUETIDES are characterised by rapidly increasing star formation histories. Specific star formation rates decrease with redshift though remain largely insensitive to stellar mass. As a result of the enhanced surface density of metals more massive galaxies are predicted to have higher dust attenuation resulting in a significant steepening of the observed far-UV luminosity function at high luminosities. The contribution of active SMBHs to the UV luminosities of galaxies with stellar masses $10^{9-10}\,{\rm M_{\odot}}$ is around $3\%$ on average. Approximately $25\%$ of galaxies with $M_{*}\approx 10^{10}\,{\rm M_{\odot}}$ are predicted to have active SMBH which contribute $>10\%$ of the total UV luminosity.

astro-ph.GA↗

arXiv2016

The origin of most massive black holes at high-z: BLUETIDES and the next quasar frontier

The growth of the most massive black holes in the early universe, consistent with the detection of highly luminous quasars at $z> 6$ implies sustained, critical accretion of material to grow and power them. Given a black hole seed scenario, it is still uncertain which conditions in the early Universe allow the fastest black hole growth. Large scale hydrodynamical cosmological simulations of structure formation allow us to explore the conditions conducive to the growth of the earliest supermassive black holes. We use the cosmological hydrodynamic simulation BlueTides, which incorporates a variety of baryon physics in a (400 Mpc/h)^3 volume with 0.7 trillion particles to follow the earliest phases of black hole critical growth. At z=8 the most massive black holes (a handful) approach masses of 10^8 Msun with the most massive (with M_BH = 4 x 10^8 Msun ) being found in an extremely compact spheroid-dominated host galaxy. Examining the large-scale environment of hosts, we find that the initial tidal field is more important than overdensity in setting the conditions for early BH growth. In regions of low tidal fields gas accretes 'cold' onto the black hole and falls along thin, radial filaments straight into the center forming the most compact galaxies and most massive black holes at earliest times. Regions of high tidal fields instead induce larger coherent angular momenta and influence the formation of the first population of massive compact disks. The extreme early growth depends on the early interplay of high gas densities and the tidal field that shapes the mode of accretion. Mergers play a minor role in the formation of the first generation, rare massive BHs.

astro-ph.GA↗

arXiv2016

Forecasts for the WFIRST High Latitude Survey using the BlueTides Simulation

We use the BlueTides simulation to predict the properties of the high-$z$ galaxy and active galactic nuclei (AGN) populations for the planned 2200deg$^2$ Wide-Field Infrared Survey Telescope's (WFIRST)-AFTA High Latitude Survey (HLS). BlueTides is a cosmological hydrodynamic simulation, which incorporates a variety of baryon physics in a $(400h^{-1} \mathrm{Mpc})^3$ volume evolved to $z=8$ with 0.7 trillion particles. The galaxy luminosity functions in the simulation show good agreement with all the current observational constraints (up to $z=11$) and predicts an enhanced number of UV bright galaxies. At the proposed depth of the HLS ($m < 26.75$), BlueTides predicts $10^6$ galaxies at $z=8$ with a few up to $z\sim 15$ due to the enhanced bright end of the galaxy luminosity function. At $z=8$, galaxies in the mock HLS have specific star formation rates of $\sim 10 {\rm Gyr}^{-1}$ and ages of $\sim 80 {\rm Myr}$ (both evolving linearly with redshift) and a non-evolving mass-metallicity relation. BlueTides also predicts $\sim 10^4$ AGN in WFIRST HLS from $z=8$ out to $z\sim 14$. These AGN host black holes of $M\sim 10^6-10^8 M_\odot$ accreting close to their Eddington luminosity. Galaxies and AGN have host halo masses of $M_{halo}\sim 10^{11-12} M_\odot$ and a linear bias $b\approx 13-20$. Given the expected galaxy space densities, their high bias and large volume probed we speculate that it may be feasible for WFIRST HLS detect the Baryon Acoustic Oscillation peak in the galaxy power spectrum out to $z=8-9$.

astro-ph.GA↗

arXiv2016

The Photometric Properties of Galaxies in the Early Universe

We use the large cosmological hydro-dynamic simulation BlueTides to predict the photometric properties of galaxies during the epoch of reionisation ($z=8-15$). These properties include the rest-frame UV to near-IR broadband spectral energy distributions, the Lyman continuum photon production, the UV star formation rate calibration, and intrinsic UV continuum slope. In particular we focus on exploring the effect of various modelling assumptions, including the assumed choice of stellar population synthesis model, initial mass function, and the escape fraction of Lyman continuum photons, upon these quantities. We find that these modelling assumptions can have a dramatic effect on photometric properties leading to consequences for the accurate determination of physical properties from observations. For example, at $z=8$ we predict that nebular emission can account for up-to $50\%$ of the rest-frame $R$-band luminosity, while the choice of stellar population synthesis model can change the Lyman continuum production rate up to a factor of $\times 2$.

astro-ph.GA↗