arXiv subjects

Dafine Ravelosona

Publications and source records attributed to Dafine Ravelosona.

9 recordsLinked to original sources

arXiv2025

Reversible magneto ionics in crystallized W Co20Fe60B20 MgO HfO2 ultra-thin films with perpendicular magnetic anisotropy

We have investigated electric field (E-field) induced modulation of perpendicular magnetic anisotropy (PMA) in both amorphous and crystalline W/CoFeB/MgO/HfO2 ultra-thin films. We find that in the amorphous state, the E-field effect is volatile and reversible, which is consistent with the conventional electrostatic effect through charge accumulation and depletion. In the crystallized system annealed at 370°C, we find that two effects are at play, a non-volatile and reversible voltage-induced effect on PMA and an electrostatic response. We discuss these results in terms of higher oxygen mobility at the crystallized CoFeB-MgO interface, which induces a non-volatile magnetoionic response. Modulating PMA in crystallized CoFeB-MgO materials through ionic migration opens the path to integrating magneto-ionics in full magnetic tunnel junctions.

cond-mat.mtrl-sci↗

arXiv2023

Optimization of Permalloy properties for magnetic field sensors using He$^+$ irradiation

Permalloy, despite being a widely utilized soft magnetic material, still calls for optimization in terms of magnetic softness and magnetostriction for its use in magnetoresistive sensor applications. Conventional annealing methods are often insufficient to locally achieve the desired properties for a narrow parameter range. In this study, we report a significant improvement of the magnetic softness and magnetostriction in a 30 nm Permalloy film after He$^+$ irradiation. Compared to the as-deposited state, the irradiation treatment reduces the induced anisotropy by a factor ten and the hard axis coercivity by a factor five. In addition, the effective magnetostriction of the film is significantly reduced by a factor ten - below $1\times10^{-7}$ - after irradiation. All the above mentioned effects can be attributed to the isotropic crystallite growth of the Ni-Fe alloy and to the intermixing at the magnetic layer interfaces under light ion irradiation. We support our findings with X-ray diffraction analysis of the textured Ni$_{81}$Fe$_{19}$ alloy. Importantly, the sizable magnetoresistance is preserved after the irradiation. Our results show that compared to traditional annealing methods, the use of He$^+$ irradiation leads to significant improvements in the magnetic softness and reduces strain cross sensitivity in Permalloy films required for 3D positioning and compass applications. These improvements, in combination with the local nature of the irradiation process make our finding valuable for the optimization of monolithic integrated sensors, where classic annealing methods cannot be applied due to complex interplay within the components in the device.

cond-mat.mtrl-sci↗

arXiv2022

Control of magnetoelastic coupling in Ni/Fe multilayers using He$^+$ ion irradiation

This study reports the effects of post-growth He$^+$ irradiation on the magneto-elastic properties of a $Ni$ /$Fe$ multi-layered stack. The progressive intermixing caused by He$^+$ irradiation at the interfaces of the multilayer allows us to tune the saturation magnetostriction value with increasing He$^+$ fluences, and even to induce a reversal of the sign of the magnetostrictive effect. Additionally, the critical fluence at which the absolute value of the magnetostriction is dramatically reduced is identified. Therefore insensitivity to strain of the magnetic stack is nearly reached, as required for many applications. All the above mentioned effects are attributed to the combination of the negative saturation magnetostriction of sputtered Ni, Fe layers and the positive magnetostriction of the Ni$_{x}$Fe$_{1-x}$ alloy at the intermixed interfaces, whose contribution is gradually increased with irradiation. Importantly the irradiation does not alter the layers polycrystalline structure, confirming that post-growth He$^+$ ion irradiation is an excellent tool to tune the magneto-elastic properties of magnetic samples. A new class of spintronic devices can be envisioned with a material treatment able to arbitrarily change the magnetostriction with ion-induced "magnetic patterning".

cond-mat.mtrl-sci↗

arXiv2018

Tuning spin torque nano-oscillator nonlinearity using He+ irradiation

We use He$^+$ irradiation to tune the nonlinearity, $\mathcal{N}$, of all-perpendicular spin-torque nano-oscillators (STNOs) using the He$^+$ fluence-dependent perpendicular magnetic anisotropy (PMA) of the [Co/Ni] free layer. Employing fluences from 6 to 20$\times10^{14}$~He$^{+}$/cm$^{2}$, we are able to tune $\mathcal{N}$ in an in-plane field from strongly positive to moderately negative. As the STNO microwave signal properties are mainly governed by $\mathcal{N}$, we can in this way directly control the threshold current, the current tunability of the frequency, and the STNO linewidth. In particular, we can dramatically improve the latter by more than two orders of magnitude. Our results are in good agreement with the theory for nonlinear auto-oscillators, confirm theoretical predictions of the role of nonlinearity, and demonstrate a straightforward path towards improving the microwave properties of STNOs.

physics.app-ph↗

arXiv2018

Domain Wall Motion Driven by Laplace Pressure in CoFeB-MgO Nanodots with Perpendicular Anisotropy

We have studied the magnetization reversal of CoFeB-MgO nanodots with perpendicular anisotropy for size ranging from w=400 nm to 1 μm. Contrary to previous experiments, the switching field distribution is shifted toward lower magnetic fields as the size of the elements is reduced with a mean switching field varying as 1/w. We show that this mechanism can be explained by the nucleation of a pinned magnetic domain wall (DW) at the edges of the nanodots where damages are introduced by the patterning process. As the surface tension (Laplace pressure) applied on the DW increases when reducing the size of the nanodots, we demonstrate that the depinning field to reverse the entire elements varies as 1/w. These results suggest that the presence of DWs has to be considered in the switching process of nanoscale elements and open a path toward scalable spintronic devices.

physics.app-ph↗

arXiv2018

Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches

Emerging non-volatile memories (NVMs) have currently attracted great interest for their potential applications in advanced low-power information storage and processing technologies. Conventional NVMs, such as magnetic random access memory (MRAM) and resistive random access memory (RRAM) suffer from limitations of low tunnel magnetoresistance (TMR), low access speed or finite endurance. NVMs with synergetic advantages are still highly desired for future computer architectures. Here, we report a heterogeneous memristive device composed of a magnetic tunnel junction (MTJ) nanopillar surrounded by resistive silicon switches, named resistively enhanced MTJ (Re-MTJ), that may be utilized for novel memristive memories, enabling new functionalities that are inaccessible for conventional NVMs. The Re-MTJ device features a high ON/OFF ratio of >1000% and multilevel resistance behaviour by combining magnetic switching together with resistive switching mechanisms. The magnetic switching originates from the MTJ, while the resistive switching is induced by a point-switching filament process that is related to the mobile oxygen ions. Microscopic evidence of silicon aggregated as nanocrystals along the edges of the nanopillars verifies the synergetic mechanism of the heterogeneous memristive device. This device may provide new possibilities for advanced memristive memory and computing architectures, e.g., in-memory computing and neuromorphics.

physics.app-ph↗

arXiv2018

Magnetoresistive sensors based on the elasticity of domain walls

Magnetic sensors based on the magnetoresistance effects have a promising application prospect due to their excellent sensitivity and advantages in terms of the integration. However, competition between higher sensitivity and larger measuring range remains a problem. Here, we propose a novel mechanism for the design of magnetoresistive sensors: probing the perpendicular field by detecting the expansion of the elastic magnetic Domain Wall (DW) in the free layer of a spin valve or a magnetic tunnel junction. Performances of devices based on this mechanism, such as the sensitivity and the measuring range can be tuned by manipulating the geometry of the device, without changing the intrinsic properties of the material, thus promising a higher integration level and a better performance. The mechanism is theoretically explained based on the experimental results. Two examples are proposed and their functionality and performances are verified via micromagnetic simulation.

cond-mat.mes-hall↗

arXiv2016

Perspectives of Racetrack Memory for Large-Capacity On-Chip Memory: From Device to System

Current-induced domain wall motion (CIDWM) is regarded as a promising way towards achieving emerging high-density, high-speed and low-power non-volatile devices. Racetrack memory is an attractive spintronic memory based on this phenomenon, which can store and transfer a series of data along a magnetic nanowire. However, storage capacity issue is always one of the most serious bottlenecks hindering its application for practical systems. This paper focuses on the potential of racetrack memory towards large capacity. The investigations covering from device level to system level have been carried out. Various alternative mechanisms to improve the capacity of racetrack memory have been proposed and elucidated, e.g. magnetic field assistance, chiral DW motion and voltage-controlled flexible DW pinning. All of them can increase nanowire length, allowing enhanced feasibility of large-capacity racetrack memory. By using SPICE compatible racetrack memory electrical model and commercial CMOS 28 nm design kit, mixed simulations are performed to validate their functionalities and analyze their performance. System level evaluations demonstrate the impact of capacity improvement on overall system. Compared with traditional SRAM based cache, racetrack memory based cache shows its advantages in terms of execution time and energy consumption.

cond-mat.mtrl-sci↗

arXiv2010

Ferromagnetic resonance study of Co/Pd/Co/Ni multilayers with perpendicular anisotropy irradiated with Helium ions

We present a ferromagnetic resonance (FMR) study of the effect of Helium ion irradiation on the magnetic anisotropy, the linewidth and the Gilbert damping of a Co/Ni multilayer coupled to Co/Pd bilayers. The perpendicular magnetic anisotropy decreases linearly with He ion fluence, leading to a transition to in-plane magnetization at a critical fluence of 5x10^{14} ions/cm^2. We find that the damping is nearly independent of fluence but the FMR linewidth at fixed frequency has a maximum near the critical fluence, indicating that the inhomogeneous broadening of the FMR line is a non-monotonic function of the He ion fluence. Based on an analysis of the angular dependence of the FMR linewidth, the inhomogeneous broadening is associated with spatial variations in the magnitude of the perpendicular magnetic anisotropy. These results demonstrate that ion irradiation may be used to systematically modify the magnetic anisotropy and distribution of magnetic anisotropy parameters of Co/Pd/Co/Ni multilayers for applications and basic physics studies.

cond-mat.mes-hall↗