arXiv subjects

Daiju Matsumura

Publications and source records attributed to Daiju Matsumura.

3 recordsLinked to original sources

arXiv2024

ARIM-mdx Data System: Towards a Nationwide Data Platform for Materials Science

In modern materials science, effective and high-volume data management across leading-edge experimental facilities and world-class supercomputers is indispensable for cutting-edge research. However, existing integrated systems that handle data from these resources have primarily focused just on smaller-scale cross-institutional or single-domain operations. As a result, they often lack the scalability, efficiency, agility, and interdisciplinarity, needed for handling substantial volumes of data from various researchers. In this paper, we introduce ARIM-mdx data system, aiming at a nationwide data platform for materials science in Japan. Currently in its trial phase, the platform has been involving 11 universities and institutes all over Japan, and it is utilized by over 800 researchers from around 140 organizations in academia and industry, being intended to gradually expand its reach. The ARIM-mdx data system, as a pioneering nationwide data platform, has the potential to contribute to the creation of new research communities and accelerate innovations.

cs.DC↗

arXiv2020

Distinct variation of electronic states due to annealing in La$_{1.8}$Eu$_{0.2}$CuO$_4$ and Nd$_{2}$CuO$_4$

We performed Cu {\it K}-edge X-ray absorption fine structure measurements on T'-type La$_{1.8}$Eu$_{0.2}$CuO$_4$ (LECO) and Nd$_2$CuO$_4$ (NCO) to investigate the variation in the electronic state associated with the emergence of superconductivity due to annealing. The X-ray absorption near-edge structure spectra of as-sintered (AS) LECO are quite similar to those of AS NCO, indicating that the ground state of AS T'-type LECO is a Mott insulator. We found a significant variation of the electronic state at the Cu sites in LECO due to annealing. The electron density after annealing ($n_{\rm AN}$) was evaluated for both superconducting LECO and non-superconducting NCO and found to be 0.40 and 0.05 electrons per Cu, respectively. In LECO but not in NCO, extended X-ray absorption fine structure analysis revealed a softening in the strength of the Cu-O bond in the CuO$_2$ plane due to annealing, which is consistent with the screening effect on phonons in the metallic state. Since the amounts of oxygen loss due to annealing ($δ$) for LECO and NCO are comparable with each other, these results suggest distinct electron-doping processes in the two compounds. That electron-doping in NCO approximately follows the relation $n_{\rm AN}=2δ$ can be understood if electrons are doped through oxygen deficiency, but the anneal-induced metallic nature and large $n_{\rm AN}$ of LECO suggest a variation of the electronic band structure causes self-doping of carriers. The origin of the difference in doping processes due to annealing is discussed in connection with the size of the charge transfer gap.

cond-mat.supr-con↗

arXiv2018

Ce-doping and reduction annealing effects on electronic states in Pr$_{2-x}$Ce$_{x}$CuO$_4$ studied by Cu ${K}$-edge X-ray absorption spectroscopy

We investigated Ce-substitution and reduction annealing effects on the electronic states at copper sites by Cu ${K}$-edge x-ray absorption near-edge structure measurements in Pr$_{2-x}$Ce$_x$CuO$_{4+α-δ}$ (PCCO) with varying $x$ and $δ$ (the amount of oxygen loss during annealing) values. Absorption near-edge spectra were modified by Ce-substitution and reduction annealing in a similar manner with increasing $x$ and $δ$. Considering electron doping by Ce-substitution, this similarity indicates an increase of electron number at the copper sites due to annealing $n_{\rm AN}$. Thus, the total number of electrons is determined by the amount of Ce and oxygen ions. Furthermore, quantitative analyses of the spectra clarified that the number of Cu$^+$ sites, corresponding to the induced electron number by Ce-substitution $n_{\rm Ce}$ increases linearly with $x$ in the as-sintered PCCO ($δ=0$), whereas $n_{\rm AN}$ is not exactly equal to twice of $δ$, which is expected from charge neutrality. For each $x$-fixed sample, $n_{\rm AN}$ tends to exceed 2$δ$ with increasing $δ$, suggesting the emergence of two types of carrier due to annealing.

cond-mat.supr-con↗