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Damien Querlioz

Publications and source records attributed to Damien Querlioz.

At least 19 recordsLinked to original sources

Fast simulation of nonlinear deep resistive networks for energy-based computation

Deep resistive networks are electronic energy-based systems in which computation is performed by the steady-state voltages of nonlinear circuits. Nonlinear devices enable expressive input-output transformations, but make the circuit equilibria costly to compute during simulation and training. Recent coordinate-descent solvers have achieved large speedups over SPICE-class circuit simulators, but only for nonlinearities modeled as ideal-diode models. This mathematical simplification is not sufficient for practical analog circuits. Here we extend coordinate-descent simulation to realistic monotone nonlinearities, including Shockley diodes, antiparallel diode pairs, and piecewise-linear current-voltage characteristics. With neighboring voltages fixed, each node update remains a scalar Kirchhoff-law solve. Single-exponential characteristics admit closed-form Lambert-(W) updates, while more general monotone characteristics can be handled with scalar root-finding methods. Across networks with one to three hidden layers and hidden widths from 64 to 1024, the solver reproduces matched SPICE steady-state voltages with relative $L_1$ errors below $1.1\times10^{-4}$ for 90% of validation samples, while achieving speedups up to $(1.7\times10^3)$. We further train a $1568\times100\times20$ double-Shockley network on MNIST, reaching about 3.0% test error and reducing the per-epoch training time by roughly $4.4\times10^2$. Together, these results establish a practical route to the circuit-level design and training of large-scale analog energy-based systems incorporating realistic nonlinear devices.

cs.ET

Forward-only learning in memristor arrays with month-scale stability

Turning memristor arrays from efficient inference engines into systems capable of on-chip learning has proved difficult. Weight updates have a high energy cost and cause device wear, analog states drift, and backpropagation requires a backward pass with reversed signal flow. Here we experimentally demonstrate learning on standard filamentary HfOx/Ti arrays that addresses these challenges with two design choices. First, we rely on forward-only training algorithms in the Forward-Forward family that use only inference-style operations. Second, we use sub-1 V reset-only, single-pulse updates that cut energy and yield stable analog states. We first validate fully in-hardware single-layer learning, where both analog MAC operations and sub-1 V programming updates are performed on chip. We then train two-layer classifiers on an ImageNet-resolution four-class task using a hardware-in-the-loop protocol on arrays up to 8,064 devices: all conductance reads and programming updates are physical, and multilayer MACs are emulated in software from the measured conductances. Two forward-only variants, two-pass supervised Forward-Forward and a single-pass competitive rule, achieve test accuracies of 89.5% and 89.6%, respectively; a reference experiment using backpropagation reaches 90.0%. Across five independent runs per method, these accuracies are indistinguishable within statistical uncertainty. Trained models retain accuracy for at least one month under ambient conditions and remain stable under an aggressive 25 h read-disturb protocol, whereas a matched set-based Write&Verify baseline loses nearly three percentage points of test accuracy. At the array level, sub-1 V reset updates use 460 times less energy than conventional program-and-verify programming and require just 46% more energy than inference-only operation.

cs.ET

Uncertainty-triggered wake-up enables energy-efficient, error-resilient edge AI with memristor front ends

Memristor computing offers a route to low-energy edge AI, but device variability, sensitivity to operating conditions, and system-integration challenges can hinder deployment. Here we show that these limitations can be mitigated by using memristor AI not as the final decision maker but as the ultra-low-power, always-on front end of a heterogeneous inference system. We implement this architecture by coupling a fabricated memristor Bayesian machine to a programmable CPU running a higher-power, higher-accuracy software neural network. The memristor front end acts as a probabilistic screener. When it predicts an abnormal event or produces an ambiguous or invalid output, a dedicated hardware wake-up path activates the CPU, which produces the final decision. We validate this architecture on a heartbeat-classification benchmark by interfacing the fabricated Bayesian machine with an FPGA-based wake-up platform and CPU back end. The resulting uncertainty-triggered wake-up system achieves high final classification accuracy under nominal operation and maintains this accuracy even when the memristor front end is degraded by voltage scaling or reduced programming margins, because unreliable outputs are converted into recoverable wake-up events instead of becoming silent errors. Post-layout analysis of an ASIC implementation shows that average energy is governed primarily by wake-up frequency, providing practical design rules for choosing front-end operating points. These results establish uncertainty-triggered wake-up as a strategy for energy-efficient, error-resilient edge AI.

cs.ET

Active Continual Learning with Metaplastic Binary Bayesian Neural Networks

Always-on edge systems must keep learning as conditions change under tight compute budgets and must detect unreliable predictions. Bayesian binary neural networks are attractive in this setting, but mean-field Bernoulli posteriors can saturate on long non-stationary streams, wiping out epistemic uncertainty and freezing plasticity. We propose BiMU, derived from a bounded-memory variational objective that balances stability, plasticity, and forgetting. BiMU combines a data term with controlled relaxation toward the prior and an uncertainty-dependent step size that prevents saturation and sustains informative uncertainty. This non-degenerate posterior enables fully online, buffer-free active querying via Monte Carlo disagreement, reducing label queries and backpropagation updates under imbalance. BiMU sustains learning and strong OOD detection on 1000-tasks Permuted-MNIST, and on OpenLORIS-Object achieves up to 32$\times$ label/update savings at matched accuracy under class imbalance and feature compression.

cs.LG

Unsupervised local learning based on voltage-dependent synaptic plasticity for resistive and ferroelectric synapses

The deployment of AI on edge computing devices faces significant challenges related to energy consumption and functionality. These devices could greatly benefit from brain-inspired learning mechanisms, allowing for real-time adaptation while using low-power. In-memory computing with nanoscale resistive memories may play a crucial role in enabling the execution of AI workloads on these edge devices. In this study, we introduce voltage-dependent synaptic plasticity (VDSP) as an efficient approach for unsupervised and local learning in memristive synapses based on Hebbian principles. This method enables online learning without requiring complex pulse-shaping circuits typically necessary for spike-timing-dependent plasticity (STDP). We show how VDSP can be advantageously adapted to three types of memristive devices (TiO$_2$, HfO$_2$-based metal-oxide filamentary synapses, and HfZrO$_4$-based ferroelectric tunnel junctions (FTJ)) with disctinctive switching characteristics. System-level simulations of spiking neural networks incorporating these devices were conducted to validate unsupervised learning on MNIST-based pattern recognition tasks, achieving state-of-the-art performance. The results demonstrated over 83% accuracy across all devices using 200 neurons. Additionally, we assessed the impact of device variability, such as switching thresholds and ratios between high and low resistance state levels, and proposed mitigation strategies to enhance robustness.

cs.NE

Intrinsic Annealing in a Hybrid Memristor-Magnetic Tunnel Junction Ising Machine

Hardware implementations of the Ising model offer promising solutions to large-scale optimization tasks. In the literature, various nanodevices have been shown to emulate the spin dynamics for such Ising machines with remarkable effectiveness. Other nanodevices have been shown to implement spin-spin coupling with compact footprint and minimal energy dissipation. However, an ideal Ising machine would associate both types of nanodevices, and they must operate synergistically to support annealing: a progressive reduction of machine stochasticity that allows it to settle to energy minimum. Here, we report an Ising machine that combines two nanotechnologies: memristor crossbar -- storing multi-level couplings -- and stochastic magnetic tunnel junction (SMTJ), acting as thermally driven spins. Because the same read voltage that interrogates the crossbar also biases the SMTJs, increasing this voltage automatically lowers the effective temperature of the machine, providing an intrinsic, nearly circuit-free annealing technique. Operating at zero magnetic field, our prototype consistently reaches the global optimum of a 24-vertex weighted MAX-CUT and a 10-vertex, three-color graph-coloring problem. Given that both nanotechnologies in our demonstrator are CMOS-integrated, this approach is compatible with advanced 3D integration, offering a scalable pathway toward compact, fast, and energy-efficient large-scale Ising solvers.

cs.ET

Bayesian continual learning and forgetting in neural networks

Biological synapses effortlessly balance memory retention and flexibility, yet artificial neural networks still struggle with the extremes of catastrophic forgetting and catastrophic remembering. Here, we introduce Metaplasticity from Synaptic Uncertainty (MESU), a Bayesian framework that updates network parameters according their uncertainty. This approach allows a principled combination of learning and forgetting that ensures that critical knowledge is preserved while unused or outdated information is gradually released. Unlike standard Bayesian approaches -- which risk becoming overly constrained, and popular continual-learning methods that rely on explicit task boundaries, MESU seamlessly adapts to streaming data. It further provides reliable epistemic uncertainty estimates, allowing out-of-distribution detection, the only computational cost being to sample the weights multiple times to provide proper output statistics. Experiments on image-classification benchmarks demonstrate that MESU mitigates catastrophic forgetting, while maintaining plasticity for new tasks. When training 200 sequential permuted MNIST tasks, MESU outperforms established continual learning techniques in terms of accuracy, capability to learn additional tasks, and out-of-distribution data detection. Additionally, due to its non-reliance on task boundaries, MESU outperforms conventional learning techniques on the incremental training of CIFAR-100 tasks consistently in a wide range of scenarios. Our results unify ideas from metaplasticity, Bayesian inference, and Hessian-based regularization, offering a biologically-inspired pathway to robust, perpetual learning.

cs.LG

Spintronic memristors for computing

The ever-increasing amount of data from ubiquitous smart devices fosters data-centric and cognitive algorithms. Traditional digital computer systems have separate logic and memory units, resulting in a huge delay and energy cost for implementing these algorithms. Memristors are programmable resistors with a memory, providing a paradigm-shifting approach towards creating intelligent hardware systems to handle data-centric tasks. Spintronic nanodevices are promising choices as they are high-speed, low-power, highly scalable, robust, and capable of constructing dynamic complex systems. In this Review, we survey spintronic devices from a memristor point of view. We introduce spintronic memristors based on magnetic tunnel junctions, nanomagnet ensemble, domain walls, topological spin textures, and spin waves, which represent dramatically different state spaces. They can exhibit steady, oscillatory, stochastic, and chaotic trajectories in their state spaces, which have been exploited for in-memory logic, neuromorphic computing, stochastic and chaos computing. Finally, we discuss challenges and trends in realizing large-scale spintronic memristive systems for practical applications.

physics.app-ph

Unsupervised End-to-End Training with a Self-Defined Target

Designing algorithms for versatile AI hardware that can learn on the edge using both labeled and unlabeled data is challenging. Deep end-to-end training methods incorporating phases of self-supervised and supervised learning are accurate and adaptable to input data but self-supervised learning requires even more computational and memory resources than supervised learning, too high for current embedded hardware. Conversely, unsupervised layer-by-layer training, such as Hebbian learning, is more compatible with existing hardware but does not integrate well with supervised learning. To address this, we propose a method enabling networks or hardware designed for end-to-end supervised learning to also perform high-performance unsupervised learning by adding two simple elements to the output layer: Winner-Take-All (WTA) selectivity and homeostasis regularization. These mechanisms introduce a "self-defined target" for unlabeled data, allowing purely unsupervised training for both fully-connected and convolutional layers using backpropagation or equilibrium propagation on datasets like MNIST (up to 99.2%), Fashion-MNIST (up to 90.3%), and SVHN (up to 81.5%). We extend this method to semi-supervised learning, adjusting targets based on data type, achieving 96.6% accuracy with only 600 labeled MNIST samples in a multi-layer perceptron. Our results show that this approach can effectively enable networks and hardware initially dedicated to supervised learning to also perform unsupervised learning, adapting to varying availability of labeled data.

cs.NE

Control of the magnetic anisotropy in multi-repeat Pt/Co/Al heterostructures using magneto-ionic gating

Controlling magnetic properties through the application of an electric field is a significant challenge in modern nanomagnetism. In this study, we investigate the magneto-ionic control of magnetic anisotropy in the topmost Co layer in Ta/Pt/[Co/Al/Pt]$_n$/Co/Al/AlO$_\text{x}$ multilayer stacks comprising $n +1$ Co layers and its impact on the magnetic properties of the multilayers. We demonstrate that the perpendicular magnetic anisotropy can be reversibly quenched through gate-driven oxidation of the intermediary Al layer between Co and AlO$_\text{x}$, enabling dynamic control of the magnetic layers contributing to the out-of-plane remanence - varying between $n$ and $n +1$. For multilayer configurations with $n = 2$ and $n = 4$, we observe reversible and non-volatile additions of 1/3 and 1/5, respectively, to the anomalous Hall effect amplitude based on the applied gate voltage. Magnetic imaging reveals that the gate-induced spin-reorientation transition occurs through the propagation of a single 90$^{\circ}$ magnetic domain wall separating the perpendicular and in-plane anisotropy states. In the 5-repetition multilayer, the modification leads to a doubling of the period of the magnetic domains at remanence. These results demonstrate that the magneto-ionic control of the anisotropy of a single magnetic layer can be used to control the magnetic properties of coupled multilayer systems, extending beyond the gating effects on a single magnetic layer.

cond-mat.mtrl-sci

Roadmap to Neuromorphic Computing with Emerging Technologies

The roadmap is organized into several thematic sections, outlining current computing challenges, discussing the neuromorphic computing approach, analyzing mature and currently utilized technologies, providing an overview of emerging technologies, addressing material challenges, exploring novel computing concepts, and finally examining the maturity level of emerging technologies while determining the next essential steps for their advancement.

eess.SP

Versatile CMOS Analog LIF Neuron for Memristor-Integrated Neuromorphic Circuits

Heterogeneous systems with analog CMOS circuits integrated with nanoscale memristive devices enable efficient deployment of neural networks on neuromorphic hardware. CMOS Neuron with low footprint can emulate slow temporal dynamics by operating with extremely low current levels. Nevertheless, the current read from the memristive synapses can be higher by several orders of magnitude, and performing impedance matching between neurons and synapses is mandatory. In this paper, we implement an analog leaky integrate and fire (LIF) neuron with a voltage regulator and current attenuator for interfacing CMOS neurons with memristive synapses. In addition, the neuron design proposes a dual leakage that could enable the implementation of local learning rules such as voltage-dependent synaptic plasticity. We also propose a connection scheme to implement adaptive LIF neurons based on two-neuron interaction. The proposed circuits can be used to interface with a variety of synaptic devices and process signals of diverse temporal dynamics.

cs.ET

The Logarithmic Memristor-Based Bayesian Machine

The demand for explainable and energy-efficient artificial intelligence (AI) systems for edge computing has led to significant interest in electronic systems dedicated to Bayesian inference. Traditional designs of such systems often rely on stochastic computing, which offers high energy efficiency but suffers from latency issues and struggles with low-probability values. In this paper, we introduce the logarithmic memristor-based Bayesian machine, an innovative design that leverages the unique properties of memristors and logarithmic computing as an alternative to stochastic computing. We present a prototype machine fabricated in a hybrid CMOS/hafnium-oxide memristor process. We validate the versatility and robustness of our system through experimental validation and extensive simulations in two distinct applications: gesture recognition and sleep stage classification. The logarithmic approach simplifies the computational model by converting multiplications into additions and enhances the handling of low-probability events, which are crucial in time-dependent tasks. Our results demonstrate that the logarithmic Bayesian machine achieves superior performance in terms of accuracy and energy efficiency compared to its stochastic counterpart, particularly in scenarios involving complex probabilistic models. This work paves the way for the deployment of advanced AI capabilities in edge devices, where power efficiency and reliability are paramount.

cs.ET

Bayesian Metaplasticity from Synaptic Uncertainty

Catastrophic forgetting remains a challenge for neural networks, especially in lifelong learning scenarios. In this study, we introduce MEtaplasticity from Synaptic Uncertainty (MESU), inspired by metaplasticity and Bayesian inference principles. MESU harnesses synaptic uncertainty to retain information over time, with its update rule closely approximating the diagonal Newton's method for synaptic updates. Through continual learning experiments on permuted MNIST tasks, we demonstrate MESU's remarkable capability to maintain learning performance across 100 tasks without the need of explicit task boundaries.

cs.LG

Synaptic metaplasticity with multi-level memristive devices

Deep learning has made remarkable progress in various tasks, surpassing human performance in some cases. However, one drawback of neural networks is catastrophic forgetting, where a network trained on one task forgets the solution when learning a new one. To address this issue, recent works have proposed solutions based on Binarized Neural Networks (BNNs) incorporating metaplasticity. In this work, we extend this solution to quantized neural networks (QNNs) and present a memristor-based hardware solution for implementing metaplasticity during both inference and training. We propose a hardware architecture that integrates quantized weights in memristor devices programmed in an analog multi-level fashion with a digital processing unit for high-precision metaplastic storage. We validated our approach using a combined software framework and memristor based crossbar array for in-memory computing fabricated in 130 nm CMOS technology. Our experimental results show that a two-layer perceptron achieves 97% and 86% accuracy on consecutive training of MNIST and Fashion-MNIST, equal to software baseline. This result demonstrates immunity to catastrophic forgetting and the resilience to analog device imperfections of the proposed solution. Moreover, our architecture is compatible with the memristor limited endurance and has a 15x reduction in memory

cs.NE

Powering AI at the Edge: A Robust, Memristor-based Binarized Neural Network with Near-Memory Computing and Miniaturized Solar Cell

Memristor-based neural networks provide an exceptional energy-efficient platform for artificial intelligence (AI), presenting the possibility of self-powered operation when paired with energy harvesters. However, most memristor-based networks rely on analog in-memory computing, necessitating a stable and precise power supply, which is incompatible with the inherently unstable and unreliable energy harvesters. In this work, we fabricated a robust binarized neural network comprising 32,768 memristors, powered by a miniature wide-bandgap solar cell optimized for edge applications. Our circuit employs a resilient digital near-memory computing approach, featuring complementarily programmed memristors and logic-in-sense-amplifier. This design eliminates the need for compensation or calibration, operating effectively under diverse conditions. Under high illumination, the circuit achieves inference performance comparable to that of a lab bench power supply. In low illumination scenarios, it remains functional with slightly reduced accuracy, seamlessly transitioning to an approximate computing mode. Through image classification neural network simulations, we demonstrate that misclassified images under low illumination are primarily difficult-to-classify cases. Our approach lays the groundwork for self-powered AI and the creation of intelligent sensors for various applications in health, safety, and environment monitoring.

cs.ET

A Multimode Hybrid Memristor-CMOS Prototyping Platform Supporting Digital and Analog Projects

We present an integrated circuit fabricated in a process co-integrating CMOS and hafnium-oxide memristor technology, which provides a prototyping platform for projects involving memristors. Our circuit includes the periphery circuitry for using memristors within digital circuits, as well as an analog mode with direct access to memristors. The platform allows optimizing the conditions for reading and writing memristors, as well as developing and testing innovative memristor-based neuromorphic concepts.

cs.ET

Multilayer spintronic neural networks with radio-frequency connections

Spintronic nano-synapses and nano-neurons perform complex cognitive computations with high accuracy thanks to their rich, reproducible and controllable magnetization dynamics. These dynamical nanodevices could transform artificial intelligence hardware, provided that they implement state-of-the art deep neural networks. However, there is today no scalable way to connect them in multilayers. Here we show that the flagship nano-components of spintronics, magnetic tunnel junctions, can be connected into multilayer neural networks where they implement both synapses and neurons thanks to their magnetization dynamics, and communicate by processing, transmitting and receiving radio frequency (RF) signals. We build a hardware spintronic neural network composed of nine magnetic tunnel junctions connected in two layers, and show that it natively classifies nonlinearly-separable RF inputs with an accuracy of 97.7%. Using physical simulations, we demonstrate that a large network of nanoscale junctions can achieve state-of the-art identification of drones from their RF transmissions, without digitization, and consuming only a few milliwatts, which is a gain of more than four orders of magnitude in power consumption compared to currently used techniques. This study lays the foundation for deep, dynamical, spintronic neural networks.

cs.ET