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Damien Querlioz

Publications and source records attributed to Damien Querlioz.

At least 55 records · Page 3Linked to original sources

Continual Weight Updates and Convolutional Architectures for Equilibrium Propagation

Equilibrium Propagation (EP) is a biologically inspired alternative algorithm to backpropagation (BP) for training neural networks. It applies to RNNs fed by a static input x that settle to a steady state, such as Hopfield networks. EP is similar to BP in that in the second phase of training, an error signal propagates backwards in the layers of the network, but contrary to BP, the learning rule of EP is spatially local. Nonetheless, EP suffers from two major limitations. On the one hand, due to its formulation in terms of real-time dynamics, EP entails long simulation times, which limits its applicability to practical tasks. On the other hand, the biological plausibility of EP is limited by the fact that its learning rule is not local in time: the synapse update is performed after the dynamics of the second phase have converged and requires information of the first phase that is no longer available physically. Our work addresses these two issues and aims at widening the spectrum of EP from standard machine learning models to more bio-realistic neural networks. First, we propose a discrete-time formulation of EP which enables to simplify equations, speed up training and extend EP to CNNs. Our CNN model achieves the best performance ever reported on MNIST with EP. Using the same discrete-time formulation, we introduce Continual Equilibrium Propagation (C-EP): the weights of the network are adjusted continually in the second phase of training using local information in space and time. We show that in the limit of slow changes of synaptic strengths and small nudging, C-EP is equivalent to BPTT (Theorem 1). We numerically demonstrate Theorem 1 and C-EP training on MNIST and generalize it to the bio-realistic situation of a neural network with asymmetric connections between neurons.

cs.NE↗

Physics for Neuromorphic Computing

Neuromorphic computing takes inspiration from the brain to create energy efficient hardware for information processing, capable of highly sophisticated tasks. In this article, we make the case that building this new hardware necessitates reinventing electronics. We show that research in physics and material science will be key to create artificial nano-neurons and synapses, to connect them together in huge numbers, to organize them in complex systems, and to compute with them efficiently. We describe how some researchers choose to take inspiration from artificial intelligence to move forward in this direction, whereas others prefer taking inspiration from neuroscience, and we highlight recent striking results obtained with these two approaches. Finally, we discuss the challenges and perspectives in neuromorphic physics, which include developing the algorithms and the hardware hand in hand, making significant advances with small toy systems, as well as building large scale networks.

cs.ET↗

In-situ learning harnessing intrinsic resistive memory variability through Markov Chain Monte Carlo Sampling

Resistive memory technologies promise to be a key component in unlocking the next generation of intelligent in-memory computing systems that can act and learn locally at the edge. However, current approaches to in-memory machine learning focus often on the implementation of models and algorithms which cannot be reconciled with the true, physical properties of resistive memory. Consequently, these properties, in particular cycle-to-cycle conductance variability, are considered as non-idealities that require mitigation. Here by contrast, we embrace these properties by selecting a more appropriate machine learning model and algorithm. We implement a Markov Chain Monte Carlo sampling algorithm within a fabricated array of 16,384 devices, configured as a Bayesian machine learning model. The algorithm is realised in-situ, by exploiting the devices as random variables from the perspective of their cycle-to-cycle conductance variability. We train experimentally the memory array to perform an illustrative supervised learning task as well as a malignant breast tissue recognition task, achieving an accuracy of 96.3%. Then, using a behavioural model of resistive memory calibrated on array level measurements, we apply the same approach to the Cartpole reinforcement learning task. In all cases our proposed approach outperformed software-based neural network models realised using an equivalent number of memory elements. This result lays a foundation for a new path in-memory machine learning, compatible with the true properties of resistive memory technologies, that can bring localised learning capabilities to intelligent edge computing systems.

cs.ET↗

Binding events through the mutual synchronization of spintronic nano-neurons

The brain naturally binds events from different sources in unique concepts. It is hypothesized that this process occurs through the transient mutual synchronization of neurons located in different regions of the brain when the stimulus is presented. This mechanism of binding through synchronization can be directly implemented in neural networks composed of coupled oscillators. To do so, the oscillators must be able to mutually synchronize for the range of inputs corresponding to a single class, and otherwise remain desynchronized. Here we show that the outstanding ability of spintronic nano-oscillators to mutually synchronize and the possibility to precisely control the occurrence of mutual synchronization by tuning the oscillator frequencies over wide ranges allows pattern recognition. We demonstrate experimentally on a simple task that three spintronic nano-oscillators can bind consecutive events and thus recognize and distinguish temporal sequences. This work is a step forward in the construction of neural networks that exploit the non-linear dynamic properties of their components to perform brain-inspired computations.

physics.app-ph↗

Role of non-linear data processing on speech recognition task in the framework of reservoir computing

The reservoir computing neural network architecture is widely used to test hardware systems for neuromorphic computing. One of the preferred tasks for bench-marking such devices is automatic speech recognition. However, this task requires acoustic transformations from sound waveforms with varying amplitudes to frequency domain maps that can be seen as feature extraction techniques. Depending on the conversion method, these may obscure the contribution of the neuromorphic hardware to the overall speech recognition performance. Here, we quantify and separate the contributions of the acoustic transformations and the neuromorphic hardware to the speech recognition success rate. We show that the non-linearity in the acoustic transformation plays a critical role in feature extraction. We compute the gain in word success rate provided by a reservoir computing device compared to the acoustic transformation only, and show that it is an appropriate benchmark for comparing different hardware. Finally, we experimentally and numerically quantify the impact of the different acoustic transformations for neuromorphic hardware based on magnetic nano-oscillators.

eess.AS↗

Digital Biologically Plausible Implementation of Binarized Neural Networks with Differential Hafnium Oxide Resistive Memory Arrays

The brain performs intelligent tasks with extremely low energy consumption. This work takes inspiration from two strategies used by the brain to achieve this energy efficiency: the absence of separation between computing and memory functions, and the reliance on low precision computation. The emergence of resistive memory technologies indeed provides an opportunity to co-integrate tightly logic and memory in hardware. In parallel, the recently proposed concept of Binarized Neural Network, where multiplications are replaced by exclusive NOR (XNOR) logic gates, offers a way to implement artificial intelligence using very low precision computation. In this work, we therefore propose a strategy to implement low energy Binarized Neural Networks, which employs brain-inspired concepts, while retaining energy benefits from digital electronics. We design, fabricate and test a memory array, including periphery and sensing circuits, optimized for this in-memory computing scheme. Our circuit employs hafnium oxide resistive memory integrated in the back end of line of a 130 nanometer CMOS process, in a two transistors - two resistors cell, which allows performing the exclusive NOR operations of the neural network directly within the sense amplifiers. We show, based on extensive electrical measurements, that our design allows reducing the amount of bit errors on the synaptic weights, without the use of formal error correcting codes. We design a whole system using this memory array. We show on standard machine learning tasks (MNIST, CIFAR-10, ImageNet and an ECG task) that the system has an inherent resilience to bit errors. We evidence that its energy consumption is attractive compared to more standard approaches, and that it can use the memory devices in regimes where they exhibit particularly low programming energy and high endurance.

cs.ET↗

Designing large arrays of interacting spin-torque nano-oscillators for microwave information processing

Arrays of spin-torque nano-oscillators are promising for broadband microwave signal detection and processing, as well as for neuromorphic computing. In many of these applications, the oscillators should be engineered to have equally-spaced frequencies and equal sensitivity to microwave inputs. Here we design spin-torque nano-oscillator arrays with these rules and estimate their optimum size for a given sensitivity, as well as the frequency range that they cover. For this purpose, we explore analytically and numerically conditions to obtain vortex spin-torque nano-oscillators with equally-spaced gyrotropic oscillation frequencies and having all similar synchronization bandwidths to input microwave signals. We show that arrays of hundreds of oscillators covering ranges of several hundred MHz can be built taking into account nanofabrication constraints.

physics.app-ph↗

Voltage control of domain walls in magnetic nanowires for energy efficient neuromorphic devices

An energy-efficient voltage controlled domain wall device for implementing an artificial neuron and synapse is analyzed using micromagnetic modeling in the presence of room temperature thermal noise. By controlling the domain wall motion utilizing spin transfer or spin orbit torques in association with voltage generated strain control of perpendicular magnetic anisotropy in the presence of Dzyaloshinskii-Moriya interaction, different positions of the domain wall are realized in the free layer of a magnetic tunnel junction to program different synaptic weights. The feasibility of scaling of such devices is assessed in the presence of thermal perturbations that compromise controllability. Additionally, an artificial neuron can be realized by combining this DW device with a CMOS buffer. This provides a possible pathway to realize energy efficient voltage controlled nanomagnetic deep neural networks that can learn in real time.

cond-mat.mes-hall↗

Implementing Binarized Neural Networks with Magnetoresistive RAM without Error Correction

One of the most exciting applications of Spin Torque Magnetoresistive Random Access Memory (ST-MRAM) is the in-memory implementation of deep neural networks, which could allow improving the energy efficiency of Artificial Intelligence by orders of magnitude with regards to its implementation on computers and graphics cards. In particular, ST-MRAM could be ideal for implementing Binarized Neural Networks (BNNs), a type of deep neural networks discovered in 2016, which can achieve state-of-the-art performance with a highly reduced memory footprint with regards to conventional artificial intelligence approaches. The challenge of ST-MRAM, however, is that it is prone to write errors and usually requires the use of error correction. In this work, we show that these bit errors can be tolerated by BNNs to an outstanding level, based on examples of image recognition tasks (MNIST, CIFAR-10 and ImageNet): bit error rates of ST-MRAM up to 0.1% have little impact on recognition accuracy. The requirements for ST-MRAM are therefore considerably relaxed for BNNs with regards to traditional applications. By consequence, we show that for BNNs, ST-MRAMs can be programmed with weak (low-energy) programming conditions, without error correcting codes. We show that this result can allow the use of low energy and low area ST-MRAM cells, and show that the energy savings at the system level can reach a factor two.

cs.ET↗

Stochastic Computing for Hardware Implementation of Binarized Neural Networks

Binarized Neural Networks, a recently discovered class of neural networks with minimal memory requirements and no reliance on multiplication, are a fantastic opportunity for the realization of compact and energy efficient inference hardware. However, such neural networks are generally not entirely binarized: their first layer remains with fixed point input. In this work, we propose a stochastic computing version of Binarized Neural Networks, where the input is also binarized. Simulations on the example of the Fashion-MNIST and CIFAR-10 datasets show that such networks can approach the performance of conventional Binarized Neural Networks. We evidence that the training procedure should be adapted for use with stochastic computing. Finally, the ASIC implementation of our scheme is investigated, in a system that closely associates logic and memory, implemented by Spin Torque Magnetoresistive Random Access Memory. This analysis shows that the stochastic computing approach can allow considerable savings with regards to conventional Binarized Neural networks in terms of area (62% area reduction on the Fashion-MNIST task). It can also allow important savings in terms of energy consumption, if we accept reasonable reduction of accuracy: for example a factor 2.1 can be saved, with the cost of 1.4% in Fashion-MNIST test accuracy. These results highlight the high potential of Binarized Neural Networks for hardware implementation, and that adapting them to hardware constrains can provide important benefits.

cs.ET↗

Updates of Equilibrium Prop Match Gradients of Backprop Through Time in an RNN with Static Input

Equilibrium Propagation (EP) is a biologically inspired learning algorithm for convergent recurrent neural networks, i.e. RNNs that are fed by a static input x and settle to a steady state. Training convergent RNNs consists in adjusting the weights until the steady state of output neurons coincides with a target y. Convergent RNNs can also be trained with the more conventional Backpropagation Through Time (BPTT) algorithm. In its original formulation EP was described in the case of real-time neuronal dynamics, which is computationally costly. In this work, we introduce a discrete-time version of EP with simplified equations and with reduced simulation time, bringing EP closer to practical machine learning tasks. We first prove theoretically, as well as numerically that the neural and weight updates of EP, computed by forward-time dynamics, are step-by-step equal to the ones obtained by BPTT, with gradients computed backward in time. The equality is strict when the transition function of the dynamics derives from a primitive function and the steady state is maintained long enough. We then show for more standard discrete-time neural network dynamics that the same property is approximately respected and we subsequently demonstrate training with EP with equivalent performance to BPTT. In particular, we define the first convolutional architecture trained with EP achieving ~ 1% test error on MNIST, which is the lowest error reported with EP. These results can guide the development of deep neural networks trained with EP.

cs.LG↗

Outstanding Bit Error Tolerance of Resistive RAM-Based Binarized Neural Networks

Resistive random access memories (RRAM) are novel nonvolatile memory technologies, which can be embedded at the core of CMOS, and which could be ideal for the in-memory implementation of deep neural networks. A particularly exciting vision is using them for implementing Binarized Neural Networks (BNNs), a class of deep neural networks with a highly reduced memory footprint. The challenge of resistive memory, however, is that they are prone to device variation, which can lead to bit errors. In this work we show that BNNs can tolerate these bit errors to an outstanding level, through simulations of networks on the MNIST and CIFAR10 tasks. If a standard BNN is used, up to 10^-4 bit error rate can be tolerated with little impact on recognition performance on both MNIST and CIFAR10. We then show that by adapting the training procedure to the fact that the BNN will be operated on error-prone hardware, this tolerance can be extended to a bit error rate of 4x10^-2. The requirements for RRAM are therefore a lot less stringent for BNNs than more traditional applications. We show, based on experimental measurements on a RRAM HfO2 technology, that this result can allow reduce RRAM programming energy by a factor 30.

cs.ET↗

In-Memory and Error-Immune Differential RRAM Implementation of Binarized Deep Neural Networks

RRAM-based in-Memory Computing is an exciting road for implementing highly energy efficient neural networks. This vision is however challenged by RRAM variability, as the efficient implementation of in-memory computing does not allow error correction. In this work, we fabricated and tested a differential HfO2-based memory structure and its associated sense circuitry, which are ideal for in-memory computing. For the first time, we show that our approach achieves the same reliability benefits as error correction, but without any CMOS overhead. We show, also for the first time, that it can naturally implement Binarized Deep Neural Networks, a very recent development of Artificial Intelligence, with extreme energy efficiency, and that the system is fully satisfactory for image recognition applications. Finally, we evidence how the extra reliability provided by the differential memory allows programming the devices in low voltage conditions, where they feature high endurance of billions of cycles.

cs.ET↗

Reservoir computing with the frequency, phase and amplitude of spin-torque nano-oscillators

Spin-torque nano-oscillators can emulate neurons at the nanoscale. Recent works show that the non-linearity of their oscillation amplitude can be leveraged to achieve waveform classification for an input signal encoded in the amplitude of the input voltage. Here we show that the frequency and the phase of the oscillator can also be used to recognize waveforms. For this purpose, we phase-lock the oscillator to the input waveform, which carries information in its modulated frequency. In this way we considerably decrease amplitude, phase and frequency noise. We show that this method allows classifying sine and square waveforms with an accuracy above 99% when decoding the output from the oscillator amplitude, phase or frequency. We find that recognition rates are directly related to the noise and non-linearity of each variable. These results prove that spin-torque nano-oscillators offer an interesting platform to implement different computing schemes leveraging their rich dynamical features.

physics.app-ph↗

Use of Magnetoresistive Random-Access Memory as Approximate Memory for Training Neural Networks

Hardware neural networks that implement synaptic weights with embedded non-volatile memory, such as spin torque memory (ST-MRAM), are a major lead for low energy artificial intelligence. In this work, we propose an approximate storage approach for their memory. We show that this strategy grants effective control of the bit error rate by modulating the programming pulse amplitude or duration. Accounting for the devices variability issue, we evaluate energy savings, and show how they translate when training a hardware neural network. On an image recognition example, 74% of programming energy can be saved by losing only 1% on the recognition performance.

cs.ET↗

Vowel recognition with four coupled spin-torque nano-oscillators

Substantial evidence indicates that the brain uses principles of non-linear dynamics in neural processes, providing inspiration for computing with nanoelectronic devices. However, training neural networks composed of dynamical nanodevices requires finely controlling and tuning their coupled oscillations. In this work, we show that the outstanding tunability of spintronic nano-oscillators can solve this challenge. We successfully train a hardware network of four spin-torque nano-oscillators to recognize spoken vowels by tuning their frequencies according to an automatic real-time learning rule. We show that the high experimental recognition rates stem from the high frequency tunability of the oscillators and their mutual coupling. Our results demonstrate that non-trivial pattern classification tasks can be achieved with small hardware neural networks by endowing them with non-linear dynamical features: here, oscillations and synchronization. This demonstration is a milestone for spintronics-based neuromorphic computing.

q-bio.NC↗

Nano-oscillator-based classification with a machine learning-compatible architecture

Pattern classification architectures leveraging the physics of coupled nano-oscillators have been demonstrated as promising alternative computing approaches, but lack effective learning algorithms. In this work, we propose a nano-oscillator based classification architecture where the natural frequencies of the oscillators are learned linear combinations of the inputs, and define an offline learning algorithm based on gradient back-propagation. Our results show significant classification improvements over a related approach with online learning. We also compare our architecture with a standard neural network on a simple machine learning case, which suggests that our approach is economical in terms of numbers of adjustable parameters. The introduced architecture is also compatible with existing nano-technologies: the architecture does not require changes in the coupling between nano-oscillators, and it is tolerant to oscillator phase noise.

physics.app-ph↗

Circuit-Level Evaluation of the Generation of Truly Random Bits with Superparamagnetic Tunnel Junctions

Many emerging alternative models of computation require massive numbers of random bits, but their generation at low energy is currently a challenge. The superparamagnetic tunnel junction, a spintronic device based on the same technology as spin torque magnetoresistive random access memory has recently been proposed as a solution, as this device naturally switches between two easy to measure resistance states, due only to thermal noise. Reading the state of the junction naturally provides random bits, without the need of write operations. In this work, we evaluate a circuit solution for reading the state of superparamagnetic tunnel junction. We see that the circuit may induce a small read disturb effect for scaled superparamagnetic tunnel junctions, but this effect is naturally corrected in the whitening process needed to ensure the quality of the generated random bits. These results suggest that superparamagnetic tunnel junctions could generate truly random bits at 20 fJ/bit, including overheads, orders of magnitudes below CMOS-based solutions.

physics.app-ph↗